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51. 发明申请

US20100224921A1 SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC CAPACITOR 有权
标题翻译：包括电容器的半导体器件
公开(公告)号：US20100224921A1
公开(公告)日：2010-09-09
申请号：US12722115
申请日：2010-03-11
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L27/11502 , H01L21/32051 , H01L21/76826 , H01L21/76841 , H01L21/76883 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： A semiconductor device includes a ferroelectric capacitor formed above the lower interlevel insulating film covering a MOS transistor formed on a semiconductor substrate, including lamination of a lower electrode, an oxide ferroelectric film, a first upper electrode made of conductive oxide having a stoichiometric composition AOx1 and an actual composition AOx2, a second upper electrode made of conductive oxide having a stoichiometric composition BOy1 and an actual composition BOy2, where y2/y1>x2/x1, and a third upper electrode having a composition containing metal of the platinum group; and a multilayer wiring structure formed above the lower ferroelectric capacitor, and including interlevel insulating films and wirings. Abnormal growth and oxygen vacancies can be prevented which may occur when the upper electrode of the ferroelectric capacitor is made of a conductive oxide film having a low oxidation degree and a conductive oxide film having a high oxidation degree.
摘要翻译：半导体器件包括形成在覆盖形成在半导体衬底上的MOS晶体管的下层间绝缘膜之上的铁电电容器，包括下电极，氧化物铁电膜，由具有化学计量组成AOx1的导电氧化物制成的第一上电极和实际组成AOx2，具有化学计量组成BOy1的导电氧化物和实施组成BOy2的第二上电极，其中y2 / y1> x2 / x1，以及含有铂族金属组成的第三上电极; 以及形成在下层铁电电容器上方的多层布线结构，并且包括层间绝缘膜和布线。可以防止当铁电电容器的上电极由氧化度低的导电氧化物膜和具有高氧化度的导电氧化物膜制成时可能发生异常生长和氧空位。

52. 发明授权

US07763921B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07763921B2
公开(公告)日：2010-07-27
申请号：US11938958
申请日：2007-11-13
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L29/94
CPC分类号： H01L21/7687 , H01L21/2855 , H01L21/32051 , H01L21/76826 , H01L21/76834 , H01L21/76856 , H01L28/55 , H01L28/65 , H01L2221/1078
摘要： The present invention provides a semiconductor device which is characterized as follows. The semiconductor device includes: an interlayer insulating film formed above a semiconductor substrate and provided with a hole above an impurity diffusion region; a conductive plug formed in the hole and electrically connected to the impurity diffusion region; a conductive oxygen barrier film formed on the conductive plug and the interlayer insulating film around the conductive plug; a conductive anti-diffusion film formed on the conductive oxygen barrier film; and a capacitor that has a lower electrode which is formed on the conductive anti-diffusion film and which exposes platinum or palladium on the upper surface, a capacitor dielectric film made of a ferroelectric material, and an upper electrode. The conductive anti-diffusion film is made of a non-oxide conductive material for preventing the diffusion of the constituent element of the capacitor dielectric film.
摘要翻译：本发明提供一种半导体器件，其特征如下。半导体器件包括：形成在半导体衬底之上并在杂质扩散区上方设置有空穴的层间绝缘膜; 导电插塞，其形成在所述孔中并电连接到所述杂质扩散区; 形成在所述导电插塞和所述导电插塞周围的所述层间绝缘膜上的导电氧阻隔膜; 形成在导电氧阻隔膜上的导电性防扩散膜; 以及电容器，其具有形成在导电性防扩散膜上并在上表面露出铂或钯的下部电极，由铁电体材料制成的电容器电介质膜和上部电极。导电性防扩散膜由防止电容电介质膜的构成元素扩散的非氧化物导电材料构成。

53. 发明授权

US07592660B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07592660B2
公开(公告)日：2009-09-22
申请号：US12131288
申请日：2008-06-02
申请人： Kouichi Nagai , Wensheng Wang
发明人： Kouichi Nagai , Wensheng Wang
IPC分类号： H01L29/00 , H01L21/20
CPC分类号： H01L27/11502 , H01L27/11507
摘要： There is provided a semiconductor device which includes a base insulating film formed on a semiconductor substrate, a capacitor formed on the base insulating film, an interlayer insulating film covering the capacitor, a first layer metal wiring formed on the interlayer insulating film, a single-layer first insulating film which covers the interlayer insulating film and the first layer metal wiring and has a first film thickness above the first layer metal wiring, a first capacitor protective insulating film formed on the first insulating film, a first cover insulating film which is formed on the first capacitor protective insulating film and has a second film thickness thicker than the first film thickness, above the first layer metal wiring, a third hole formed in the insulating films on the first layer metal wiring, and a fifth conductive plug formed in the third hole.
摘要翻译：提供了一种半导体器件，其包括形成在半导体衬底上的基底绝缘膜，形成在基底绝缘膜上的电容器，覆盖电容器的层间绝缘膜，形成在层间绝缘膜上的第一层金属布线，层间绝缘膜，覆盖层间绝缘膜和第一层金属布线，并且具有在第一层金属布线上方的第一膜厚度，形成在第一绝缘膜上的第一电容器保护绝缘膜，形成的第一覆盖绝缘膜在第一电容器保护绝缘膜上并且具有比第一膜厚度厚的第二膜厚度，在第一层金属布线上方，形成在第一层金属布线上的绝缘膜中的第三孔和形成在第一层金属布线中的第五导电插塞第三洞。

54. 发明申请

US20080261332A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20080261332A1
公开(公告)日：2008-10-23
申请号：US11938956
申请日：2007-11-13
申请人： Wensheng Wang , Yoshimasa Horii
发明人： Wensheng Wang , Yoshimasa Horii
IPC分类号： H01L21/8246
CPC分类号： H01L27/11502 , H01L21/32051 , H01L21/76826 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L21/76856 , H01L21/7687 , H01L27/11507 , H01L28/55
摘要： The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a ferroelectric film on a first conductive film by a sol-gel method; forming a first conductive metal oxide film on the ferroelectric film; carrying out a first annealing on the first conductive metal oxide film; forming a second conductive metal oxide film on the first conductive metal oxide film, so that the first and second conductive films serve as a second conductive film; and forming a capacitor by patterning the first conductive film, the ferroelectric film and the second conductive film. In the step of forming the first conductive metal oxide film, ferroelectric characteristics are adjusted with a flow rate ratio of oxygen by utilizing the fact that the ferroelectric characteristics of the ferroelectric film improve as the flow rate ratio of oxygen in a sputtering gas increases.
摘要翻译：本发明提供一种制造半导体器件的方法，包括以下步骤：通过溶胶 - 凝胶法在第一导电膜上形成铁电体膜; 在所述强电介质膜上形成第一导电金属氧化物膜; 对所述第一导电金属氧化物膜进行第一退火; 在第一导电金属氧化物膜上形成第二导电金属氧化物膜，使得第一和第二导电膜用作第二导电膜; 以及通过对第一导电膜，铁电体膜和第二导电膜进行构图来形成电容器。在形成第一导电金属氧化物膜的步骤中，通过利用随着溅射气体中的氧气的流量比的增加，强电介质膜的铁电特性提高的事实，以氧气的流量比调节铁电特性。

55. 发明授权

US07405121B2 Semiconductor device with capacitors and its manufacture method 有权
公开(公告)号：US07405121B2
公开(公告)日：2008-07-29
申请号：US11976115
申请日：2007-10-22
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L21/8242
CPC分类号： H01L28/57 , H01L27/11502 , H01L27/11507 , H01L28/65 , H01L28/75
摘要： An interlayer insulating film (22) is formed on a semiconductor substrate. A conductive plug (25) is embedded in a via hole formed through the interlayer insulating film. An oxygen barrier conductive film (33) is formed on the interlayer insulating film and being inclusive of an area of the conductive plug as viewed in plan. A capacitor (35) laminating a lower electrode, a dielectric film and an upper electrode in this order is formed on the oxygen barrier film. An intermediate layer (34) is disposed at an interface between the oxygen barrier film and the lower electrode. The intermediate layer is made of alloy which contains at least one constituent element of the oxygen barrier film and at least one constituent element of the lower electrode.

56. 发明申请

US20080111241A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080111241A1
公开(公告)日：2008-05-15
申请号：US11938958
申请日：2007-11-13
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L23/48 , H01L21/00
CPC分类号： H01L21/7687 , H01L21/2855 , H01L21/32051 , H01L21/76826 , H01L21/76834 , H01L21/76856 , H01L28/55 , H01L28/65 , H01L2221/1078
摘要： The present invention provides a semiconductor device which is characterized as follows. The semiconductor device includes: an interlayer insulating film formed above a semiconductor substrate and provided with a hole above an impurity diffusion region; a conductive plug formed in the hole and electrically connected to the impurity diffusion region; a conductive oxygen barrier film formed on the conductive plug and the interlayer insulating film around the conductive plug; a conductive anti-diffusion film formed on the conductive oxygen barrier film; and a capacitor that has a lower electrode which is formed on the conductive anti-diffusion film and which exposes platinum or palladium on the upper surface, a capacitor dielectric film made of a ferroelectric material, and an upper electrode. The conductive anti-diffusion film is made of a non-oxide conductive material for preventing the diffusion of the constituent element of the capacitor dielectric film.
摘要翻译：本发明提供一种半导体器件，其特征如下。半导体器件包括：形成在半导体衬底之上并在杂质扩散区上方设置有空穴的层间绝缘膜; 导电插塞，其形成在所述孔中并电连接到所述杂质扩散区; 形成在所述导电插塞和所述导电插塞周围的所述层间绝缘膜上的导电氧阻隔膜; 形成在导电氧阻隔膜上的导电性防扩散膜; 以及电容器，其具有形成在导电性防扩散膜上并在上表面露出铂或钯的下部电极，由铁电体材料制成的电容器电介质膜和上部电极。导电性防扩散膜由防止电容电介质膜的构成元素扩散的非氧化物导电材料构成。

57. 发明申请

US20080073680A1 Semiconductor device and fabrication process thereof 审中-公开
标题翻译：半导体器件及其制造工艺
公开(公告)号：US20080073680A1
公开(公告)日：2008-03-27
申请号：US11790548
申请日：2007-04-26
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L29/78 , H01L21/00
CPC分类号： H01L27/11502 , H01L27/11507
摘要： A semiconductor device includes a conductive oxygen diffusion barrier film formed over a substrate, a metal oxide film formed over the conductive oxygen diffusion barrier film for suppressing diffusion of Pb, a lower electrode containing Pt formed over the metal oxide film, a ferroelectric film containing Pb and formed over the lower electrode, and an upper electrode formed over the ferroelectric film.
摘要翻译：半导体器件包括在衬底上形成的导电性氧扩散阻挡膜，形成在导电性氧扩散阻挡膜上的用于抑制Pb扩散的金属氧化物膜，含有形成在金属氧化物膜上的Pt的下电极，含有Pb的铁电体膜并形成在下电极上，以及形成在铁电体膜上的上电极。

58. 发明授权

US07344898B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07344898B2
公开(公告)日：2008-03-18
申请号：US11222871
申请日：2005-09-12
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L21/00 , H01L21/338 , H01L21/469
CPC分类号： H01L28/65 , G11C11/22 , G11C11/221 , H01L27/11502 , H01L27/11507 , H01L28/57
摘要： After a bottom electrode film is formed, a ferroelectric film is formed on the bottom electrode film. Then, a heat treatment is performed for the ferroelectric film in an oxidizing atmosphere so as to crystallize the ferroelectric film. Then, a top electrode film is formed on the ferroelectric film. In the heat treatment (i.e., annealing for crystallization), a flow rate of oxidizing gas is set to be in a range of from 10 sccm to 100 sccm.
摘要翻译：在形成底部电极膜之后，在底部电极膜上形成铁电体膜。然后，在氧化气氛中对铁电体膜进行热处理，使铁电体膜结晶化。然后，在铁电体膜上形成顶部电极膜。在热处理（即结晶退火）中，将氧化气体的流量设定为10sccm〜100sccm的范围。

59. 发明申请

US20080057641A1 Semiconductor device with capacitors and its manufacture method 有权
标题翻译：具有电容器的半导体器件及其制造方法
公开(公告)号：US20080057641A1
公开(公告)日：2008-03-06
申请号：US11976115
申请日：2007-10-22
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L21/8242
CPC分类号： H01L28/57 , H01L27/11502 , H01L27/11507 , H01L28/65 , H01L28/75
摘要： An interlayer insulating film (22) is formed on a semiconductor substrate. A conductive plug (25) is embedded in a via hole formed through the interlayer insulating film. An oxygen barrier conductive film (33) is formed on the interlayer insulating film and being inclusive of an area of the conductive plug as viewed in plan. A capacitor (35) laminating a lower electrode, a dielectric film and an upper electrode in this order is formed on the oxygen barrier film. An intermediate layer (34) is disposed at an interface between the oxygen barrier film and the lower electrode. The intermediate layer is made of alloy which contains at least one constituent element of the oxygen barrier film and at least one constituent element of the lower electrode.
摘要翻译：在半导体衬底上形成层间绝缘膜（22）。导电插头（25）嵌入通过层间绝缘膜形成的通孔中。在层间绝缘膜上形成氧阻隔导电膜（33），并且包括在平面图中所示的导电插塞的区域。在氧阻隔膜上形成依次层叠下电极，电介质膜和上电极的电容器（35）。中间层（34）设置在氧阻隔膜和下电极之间的界面处。中间层由含有氧阻隔膜的至少一种构成元素和下电极的至少一种构成元素的合金制成。

60. 发明申请

US20080054328A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080054328A1
公开(公告)日：2008-03-06
申请号：US11646443
申请日：2006-12-28
申请人： Wensheng Wang
发明人： Wensheng Wang
IPC分类号： H01L29/94 , H01L21/8242
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/65 , H01L28/75
摘要： The method includes the steps of forming an upper electrode of a capacitor by patterning a second conductive film; forming a capacitor dielectric film by patterning a ferroelectric film; and forming a lower electrode by patterning a first conductive film. A step of forming the first conductive film includes the steps of forming a lower conductive layer made of a noble metal other than iridium over a first interlayer insulating film; and forming an upper conductive layer made of a conductive material, which is different from a material for the lower conductive layer, and which is other than platinum.
摘要翻译：该方法包括通过对第二导电膜进行构图来形成电容器的上电极的步骤; 通过图案化铁电膜形成电容器电介质膜; 以及通过图案化第一导电膜形成下电极。形成第一导电膜的步骤包括以下步骤：在第一层间绝缘膜上形成由铱以外的贵金属制成的下导电层; 以及形成与导电材料不同的上导电层，所述导电材料与用于下导电层的材料不同，并且不是铂。

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