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51. 发明授权

US08548020B2 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device 有权
公开(公告)号：US08548020B2
公开(公告)日：2013-10-01
申请号：US12837291
申请日：2010-07-15
申请人： Shimpei Takagi , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
发明人： Shimpei Takagi , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
IPC分类号： H01S5/00
摘要： A III-nitride semiconductor laser device includes a laser structure including a support base, a semiconductor region, and an electrode. The support base includes a hexagonal III-nitride semiconductor and a semipolar primary surface. The semiconductor region includes first and second cladding layers and an active layer arranged along an axis normal to the semipolar primary surface. A c-axis of the hexagonal III-nitride semiconductor is inclined at an angle ALPHA with respect to the normal axis toward an m-axis of the hexagonal III-nitride semiconductor. The laser structure includes first and second fractured faces that intersect with an m-n plane defined by the normal axis and the m-axis of the hexagonal III-nitride semiconductor. A laser cavity of the laser device includes the first and second fractured faces. Each of the first and second fractured faces have a stripe structure on an end face of the support base.

52. 发明授权

US08507305B2 Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrate 失效
标题翻译： III族氮化物半导体激光器件，III族氮化物半导体激光器件的制造方法和外延衬底
公开(公告)号：US08507305B2
公开(公告)日：2013-08-13
申请号：US13443480
申请日：2012-04-10
申请人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Nobuhiro Saga , Masahiro Adachi , Kazuhide Sumiyoshi , Shinji Tokuyama , Shimpei Takagi , Takatoshi Ikegami , Masaki Ueno , Koji Katayama
发明人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Takamichi Sumitomo , Nobuhiro Saga , Masahiro Adachi , Kazuhide Sumiyoshi , Shinji Tokuyama , Shimpei Takagi , Takatoshi Ikegami , Masaki Ueno , Koji Katayama
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/0207 , H01S5/2201 , H01S5/3202
摘要： A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which includes a hexagonal III-nitride semiconductor and a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor region. The semiconductor region includes a first cladding layer of a first conductivity type GaN-based semiconductor, a second cladding layer of a second conductivity type GaN-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer.
摘要翻译： III族氮化物半导体激光器件具有激光结构和电极。激光器结构包括支撑基底，其包括六边形III族氮化物半导体和半极性主表面，以及设置在半极性主表面上的半导体区域。电极设置在半导体区域上。半导体区域包括第一导电型GaN基半导体的第一包层，第二导电型GaN基半导体的第二包层和设置在第一包层和第二包层之间的有源层。

53. 发明授权

US08415707B2 Group III nitride semiconductor device 失效
标题翻译： III族氮化物半导体器件
公开(公告)号：US08415707B2
公开(公告)日：2013-04-09
申请号：US12834977
申请日：2010-07-13
申请人： Shinji Tokuyama , Masaki Ueno , Masahiro Adachi , Takashi Kyono , Takamichi Sumitomo , Koji Katayama , Yoshihiro Saito
发明人： Shinji Tokuyama , Masaki Ueno , Masahiro Adachi , Takashi Kyono , Takamichi Sumitomo , Koji Katayama , Yoshihiro Saito
IPC分类号： H01L33/00
CPC分类号： H01L21/28575 , H01L29/045 , H01L29/2003 , H01L29/452 , H01L33/32 , H01L33/40
摘要： A Group III nitride semiconductor device has a semiconductor region, a metal electrode, and a transition layer. The semiconductor region has a surface comprised of a Group III nitride crystal. The semiconductor region is doped with a p-type dopant. The surface is one of a semipolar surface and a nonpolar surface. The metal electrode is provided on the surface. The transition layer is formed between the Group III nitride crystal of the semiconductor region and the metal electrode. The transition layer is made by interdiffusion of a metal of the metal electrode and a Group III nitride of the semiconductor region.
摘要翻译： III族氮化物半导体器件具有半导体区域，金属电极和过渡层。半导体区域具有由III族氮化物晶体组成的表面。半导体区域掺杂有p型掺杂剂。表面是半极性表面和非极性表面之一。金属电极设置在表面上。在半导体区域的III族氮化物晶体和金属电极之间形成过渡层。过渡层是通过金属电极的金属和半导体区域的III族氮化物的相互扩散而制成的。

54. 发明授权

US08395930B2 Method of programming variable resistance element and nonvolatile storage device 有权
标题翻译：编程可变电阻元件和非易失性存储器件的方法
公开(公告)号：US08395930B2
公开(公告)日：2013-03-12
申请号：US13596154
申请日：2012-08-28
申请人： Shunsaku Muraoka , Takeshi Takagi , Satoru Mitani , Koji Katayama
发明人： Shunsaku Muraoka , Takeshi Takagi , Satoru Mitani , Koji Katayama
IPC分类号： G11C11/21
CPC分类号： G11C13/0007 , G11C13/0069 , G11C2013/0083 , G11C2213/72 , G11C2213/79 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A method includes applying a first polarity writing voltage pulse to a metal oxide layer to change its resistance state from high to low into a write state, applying a second polarity erasing voltage pulse different from the first polarity to the metal oxide layer to change its resistance state from low to high into an erase state, and applying an initial voltage pulse having the second polarity to the metal oxide layer before first application of the writing voltage pulse, to change an initial resistance value of the metal oxide layer. R0>RH>RL and |V0|>|Ve|≧|Vw| are satisfied where R0, RL, and RH are the resistance values of the initial, write, and erase states, respectively, of the metal oxide layer, and V0, Vw, and Ve are voltage values of the initial, writing, and erasing voltage pulses, respectively.
摘要翻译：一种方法包括：将第一极性写入电压脉冲施加到金属氧化物层，以将其电阻状态从高变为低电平变为写入状态，将不同于第一极性的第二极性擦除电压脉冲施加到金属氧化物层以改变其电阻状态从低到高进入擦除状态，以及在首次施加写入电压脉冲之前将具有第二极性的初始电压脉冲施加到金属氧化物层，以改变金属氧化物层的初始电阻值。 R0> RH> RL和| V0 |> | Ve |≥| Vw | 满足R0，RL和RH分别是金属氧化物层的初始，写入和擦除状态的电阻值，V0，Vw和Ve是初始，写入和擦除电压的电压值脉冲。

55. 发明申请

US20130037775A1 NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR DEVICE INCORPORATING NONVOLATILE MEMORY ELEMENT 有权
标题翻译：非易失性存储元件及其制造方法，以及并入非易失性存储元件的非易失性半导体器件
公开(公告)号：US20130037775A1
公开(公告)日：2013-02-14
申请号：US13567646
申请日：2012-08-06
申请人： Satoru Mitani , Yoshihiko Kanzawa , Koji Katayama , Takeshi Takagi
发明人： Satoru Mitani , Yoshihiko Kanzawa , Koji Katayama , Takeshi Takagi
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： G11C13/0069 , G11C13/0007 , G11C2213/32 , G11C2213/34 , G11C2213/71 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A nonvolatile memory element of the present invention comprises a first electrode (103), a second electrode (108); a resistance variable layer (107) which is interposed between the first electrode (103) and the second electrode (107) and is configured to switch a resistance value reversibly in response to an electric signal applied between the electrodes (103) and (108), and the resistance variable layer (107) has at least a multi-layer structure in which a first hafnium-containing layer having a composition expressed as HfOx (0.9≦x≦1.6), and a second hafnium-containing layer having a composition expressed as HfOy (1.8≦y≦2.0) are stacked together.
摘要翻译：本发明的非易失性存储元件包括第一电极（103），第二电极（108）介于第一电极（103）和第二电极（107）之间的电阻变化层（107），其被配置成响应于施加在电极（103）和（108）之间的电信号可逆地切换电阻值，，并且电阻变化层（107）具有至少多层结构，其中具有表示为HfO x（0.9＆nlE; x＆nlE; 1.6）的组成的第一含铪层和具有组成的第二含铪层表示为HfOy（1.8＆nlE; y＆nlE; 2.0）堆叠在一起。

56. 发明授权

US08361885B2 Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and method of estimating damage from formation of scribe groove 失效
标题翻译： III族氮化物半导体激光器件，III族氮化物半导体激光器件的制造方法以及由划刻槽形成估计损伤的方法
公开(公告)号：US08361885B2
公开(公告)日：2013-01-29
申请号：US13300220
申请日：2011-11-18
申请人： Yusuke Yoshizumi , Shimpei Takagi , Takatoshi Ikegami , Masaki Ueno , Koji Katayama
发明人： Yusuke Yoshizumi , Shimpei Takagi , Takatoshi Ikegami , Masaki Ueno , Koji Katayama
IPC分类号： H01L21/00
CPC分类号： H01S5/3202 , B82Y20/00 , G01N21/62 , H01S5/0014 , H01S5/0202 , H01S5/1082 , H01S5/1085 , H01S5/20 , H01S5/2009 , H01S5/34333
摘要： A method of fabricating group-III nitride semiconductor laser device includes: preparing a substrate comprising a hexagonal group-III nitride semiconductor and having a semipolar principal surface; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, where the laser structure includes a semiconductor region and the substrate, where the semiconductor region is formed on the semipolar principal surface; scribing a first surface of the substrate product in a direction of an a-axis of the hexagonal group-III nitride semiconductor to form first and second scribed grooves; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.
摘要翻译：制造III族氮化物半导体激光器件的方法包括：制备包括六方晶III-III族氮化物半导体并具有半极性主表面的衬底; 形成具有激光结构的基板产品，阳极电极和阴极电极，其中所述激光器结构包括半导体区域和所述基板，其中所述半导体区域形成在所述半极性主表面上; 在六方晶III族氮化物半导体的a轴的方向上刻划基板产品的第一表面以形成第一和第二划线槽; 并且通过压靠衬底产品的第二表面进行衬底产品的分解，以形成另一衬底产品和激光棒。

57. 发明授权

US08279658B2 Method of programming variable resistance element and nonvolatile storage device 有权
标题翻译：编程可变电阻元件和非易失性存储器件的方法
公开(公告)号：US08279658B2
公开(公告)日：2012-10-02
申请号：US12994462
申请日：2010-03-25
申请人： Shunsaku Muraoka , Takeshi Takagi , Satoru Mitani , Koji Katayama
发明人： Shunsaku Muraoka , Takeshi Takagi , Satoru Mitani , Koji Katayama
IPC分类号： G11C11/21
CPC分类号： G11C13/0007 , G11C13/0069 , G11C2013/0083 , G11C2213/72 , G11C2213/79 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： Applying a writing voltage pulse having a first polarity to a metal oxide layer (3) to change a resistance state of the metal oxide layer (3) from high to low so as to render the resistance state a write state, applying an erasing voltage pulse having a second polarity different from the first polarity to the metal oxide layer (3) to change the resistance state of the metal oxide layer (3) from low to high so as to render the resistance state an erase state, and applying an initial voltage pulse having the second polarity to the metal oxide layer (3) before the applying of a writing voltage pulse is performed for a first time, to change a resistance value of an initial state of the metal oxide layer (3) are included, and R0>RH>RL and |V0|>|Ve|≧|Vw| are satisfied where R0, RL, and RH are the resistance values of the initial, write, and erase states, respectively, of the metal oxide layer (3), and V0, Vw, and Ve are voltage values of the initial, writing, and erasing voltage pulses, respectively.
摘要翻译：将具有第一极性的写入电压脉冲施加到金属氧化物层（3）以将金属氧化物层（3）的电阻状态从高变为低，以使电阻状态成为写入状态，施加擦除电压脉冲具有与第一极性不同于金属氧化物层（3）的第二极性，以将金属氧化物层（3）的电阻状态从低到高改变为使得电阻状态为擦除状态，并且施加初始电压首先执行施加写入电压脉冲之前对金属氧化物层（3）具有第二极性的脉冲，以改变金属氧化物层（3）的初始状态的电阻值，并且R0 > RH> RL和| V0 |> | Ve |≥| Vw | 满足R0，RL和RH分别为金属氧化物层（3）的初始，写入和擦除状态的电阻值，V0，Vw和Ve为初始，写入和写入的电压值，并分别擦除电压脉冲。

58. 发明申请

US20120230085A1 FORMING METHOD OF PERFORMING FORMING ON VARIABLE RESISTANCE NONVOLATILE MEMORY ELEMENT, AND VARIABLE RESISTANCE NONVOLATILE MEMORY DEVICE 有权
标题翻译：形成可变电阻非易失性存储器元件和可变电阻非易失性存储器件的形成方法
公开(公告)号：US20120230085A1
公开(公告)日：2012-09-13
申请号：US13511275
申请日：2011-09-28
申请人： Ken Kawai , Kazuhiko Shimakawa , Koji Katayama , Shunsaku Muraoka
发明人： Ken Kawai , Kazuhiko Shimakawa , Koji Katayama , Shunsaku Muraoka
IPC分类号： G11C11/00
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/0064 , G11C13/0069 , G11C2013/0073 , G11C2013/0083 , G11C2213/32 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： In forming, an automatic forming circuit (210) included in a nonvolatile memory device (200) causes a constant current IL to flow in a selected memory cell having a considerably high initial resistance. When the forming generates a filament path in the memory cell and thereby a resistance value is decreased, a potential of a node NBL and a potential of a node Nin are also decreased. If the potentials become lower than that of a reference voltage Vref, an output NO of a difference amplifier (303) for detecting forming success is activated, and a forming success signal Vfp is activated after a delay time depending on the number n of flip flops FF1 to FFn and a clock signal CLK. Thereby, a switch transistor (301) is in a non-conducting state and the forming on a variable resistance element is automatically terminated.
摘要翻译：在形成时，包括在非易失性存储器件（200）中的自动形成电路（210）使得恒定电流IL流过具有相当高的初始电阻的所选择的存储单元。当形成在存储单元中产生细丝通路并由此电阻值减小时，节点NBL的电位和节点Nin的电位也减小。如果电位变得低于参考电压Vref的电位，则激活用于检测成形成功的差分放大器（303）的输出NO，并且根据触发器的数量n在延迟时间之后激活形成成功信号Vfp FF1〜FFn和时钟信号CLK。由此，开关晶体管（301）处于非导通状态，可变电阻元件上的形成自动终止。

59. 发明申请

US20120214268A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 有权
标题翻译： III族氮化物半导体激光器件及其制备III族氮化物半导体激光器件的方法
公开(公告)号：US20120214268A1
公开(公告)日：2012-08-23
申请号：US13404310
申请日：2012-02-24
申请人： Shimpei TAKAGI , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
发明人： Shimpei TAKAGI , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
IPC分类号： H01L33/02
CPC分类号： H01S5/1085 , B82Y20/00 , H01L33/0045 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/0208 , H01S5/2201 , H01S5/3202 , H01S5/3404 , H01S5/34333
摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate product, where the substrate product has a laser structure, the laser structure includes a semiconductor region and a substrate of a hexagonal III-nitride semiconductor, the substrate has a semipolar primary surface, and the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product to form a scribed mark, the scribed mark extending in a direction of an a-axis of the hexagonal III-nitride semiconductor; and after forming the scribed mark, carrying out breakup of the substrate product by press against a second region of the substrate product while supporting a first region of the substrate product but not supporting the second region thereof, to form another substrate product and a laser bar.
摘要翻译：一种制造III族氮化物半导体激光器件的方法包括：制备衬底产品，其中衬底产品具有激光结构，激光结构包括半导体区域和六边形III族氮化物半导体的衬底，该衬底具有半极性主表面，并且半导体区域形成在半极性主表面上; 划定基板产品的第一表面以形成划刻标记，所述划线标记沿所述六边形III族氮化物半导体的a轴方向延伸; 并且在形成划线之后，在支撑基板产品的第一区域但不支撑其第二区域的同时通过压靠基板产品的第二区域来进行基板产品的分解，以形成另一基板产品和激光条。

60. 发明申请

US20120100654A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 失效
标题翻译： III族氮化物半导体激光器件，以及制备III族氮化物半导体激光器件的方法
公开(公告)号：US20120100654A1
公开(公告)日：2012-04-26
申请号：US13289507
申请日：2011-11-04
申请人： Shimpei TAKAGI , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
发明人： Shimpei TAKAGI , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
IPC分类号： H01L33/32
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/0425 , H01S5/1082 , H01S5/1085 , H01S5/16 , H01S5/3202 , H01S2301/14
摘要： A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate having a hexagonal III-nitride semiconductor and having a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, the laser structure including a substrate and a semiconductor region formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal III-nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.
摘要翻译：一种制造III族氮化物半导体激光器件的方法包括：制备具有六边形III族氮化物半导体并具有半极性主表面的衬底; 形成具有激光结构的衬底产品，阳极电极和阴极电极，所述激光器结构包括形成在所述半极性主表面上的衬底和半导体区域; 在六边形III族氮化物半导体的a轴的方向上划分基板产品的第一表面; 并且通过压靠衬底产品的第二表面进行衬底产品的分解，以形成另一衬底产品和激光棒。

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