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    • 51. 发明申请
    • Optical signal reception device
    • 光信号接收装置
    • US20060193640A1
    • 2006-08-31
    • US11282886
    • 2005-11-21
    • Toru KatagiriTakeshi HoshidaTomoo TakaharaKentaro NakamuraNaoki Kuwata
    • Toru KatagiriTakeshi HoshidaTomoo TakaharaKentaro NakamuraNaoki Kuwata
    • H04B10/04
    • H04B10/66H04L27/223
    • An optical signal reception device is disclosed that receives and demodulates an optical signal modulated by DQPSK and performs logical inversion and other controls to transit to the object reception state. The signal reception device includes a front end including a delay interferometer and an opto-electric conversion element that receive the DQPSK optical signal and convert it into an in-phase signal and an orthogonal signal, a clock regenerator that regenerates a clock signal based on the in-phase signal and the orthogonal signal, a multiplexer that multiplexes the in-phase signal and the orthogonal signal, a reception frame processing unit that detects frame synchronization based on the signal multiplexed by the multiplexer and de-maps the received frames, and a controller that, based on out-of-frame-synchronization information (LOF/OOF) from the reception frame processing unit, performs logical inversion control in the clock regenerator, multiplexing timing control in the multiplexer, and controls the delay interferometer in the front end so as to transit to the object reception state.
    • 公开了一种光信号接收装置,其接收并解调由DQPSK调制的光信号,并执行逻辑反转和其它控制以转接到对象接收状态。 信号接收装置包括前端,包括延迟干涉仪和接收DQPSK光信号并将其转换为同相信号和正交信号的光电转换元件,时钟再生器基于该信号再生时钟信号 同相信号和正交信号,复用多路复用同相信号和正交信号的接收帧处理单元,其基于由多路复用器复用的信号来检测帧同步并解映射接收的帧,以及 控制器,其基于来自接收帧处理单元的帧外同步信息(LOF / OOF),在时钟再生器中进行逻辑反转控制,多路复用器中进行复用定时控制,并控制前端的延迟干涉仪 以便转移到对象接收状态。
    • 56. 发明授权
    • Frame structure of a working vehicle for attaching a working implement
    • 用于连接工作工具的作业车辆的框架结构
    • US5248237A
    • 1993-09-28
    • US863985
    • 1992-04-06
    • Kentaro Nakamura
    • Kentaro Nakamura
    • A01B59/048E02F3/36E02F3/627
    • E02F3/627
    • A frame structure of a working vehicle for attaching working implements includes front axle frames, side frames for attaching a front loader, and rear reinforcing members. The front axle frames extend forwardly and substantially parallel to each other on opposite sides of the working vehicle. The front axle frames are removably attached to an engine of the working vehicle. The side frames for attaching a front loader project laterally outwardly of the working vehicle for securing the front loader to distal ends thereof. The side frames are removably secured to the front axle frames through mounting plates, respectively. Each of the rear reinforcing members is supported at a forward end thereof by a bracket of one of the side frames, and at a rear end by a vehicle body. Each rear reinforcing member has a connector for supporting a safety frame.
    • 作业车辆的作业车架的框架结构包括前轮架,用于安装前装载机的侧架和后加强件。 前轴框架在作业车辆的相对侧上向前并且基本上彼此平行。 前轴框架可移除地附接到工作车辆的发动机。 用于安装前部装载机的侧框架横向向外突出于工作车辆的外侧,用于将前部装载机固定到其远端。 侧框架分别通过安装板可拆卸地固定到前轴框架。 每个后部加强构件的前端由一个侧框架的托架支撑,在后端由车体支撑。 每个后部加强构件具有用于支撑安全框架的连接器。
    • 57. 发明授权
    • Epitaxial deposition process for producing an electrostatic induction
type thyristor
    • 用于制造静电感应型晶闸管的外延沉积工艺
    • US4171995A
    • 1979-10-23
    • US760370
    • 1977-01-18
    • Jun-ichi NishizawaKentaro NakamuraTakashi Kitsuregawa
    • Jun-ichi NishizawaKentaro NakamuraTakashi Kitsuregawa
    • H01L21/329H01L29/739H01L21/20H01L21/22
    • H01L29/66356H01L29/7392Y10S148/088
    • A process of manufacturing a static induction thyristor comprising providing a semiconductor substrate of the first conductivity type which defines a first semiconductor layer and forming a second semiconductor layer thereon of a second conductivity type. The first and second semiconductor layers have relative impurity concentrations effective for forming therebetween charge depletion regions when no electrical signal is applied to the second semiconductor layer and which prevent injection of charge carriers through the second semiconductor layer when the thyristor is in a blocking state, and such that electrically forward biasing the second semiconductor layer effectuates a sufficient reduction of the depletion regions that a sufficient quantity of charge carriers may be injected through the second semiconductor layer that the thryistor switches to a conductive state. The second semiconductor layer defines the gate region of the thyristor.
    • 一种制造静态感应晶闸管的方法,包括提供限定第一半导体层并在其上形成第二导电类型的第二半导体层的第一导电类型的半导体衬底。 当第二半导体层没有电信号施加到第二半导体层上时,第一和第二半导体层具有有效的用于在其间形成电荷耗尽区的相对杂质浓度,并且当晶闸管处于阻塞状态时,阻止注入电荷载流子穿过第二半导体层, 使得向前偏置第二半导体层的方式实现耗尽区域的足够的减少,使得能够通过第二半导体层注入足够量的电荷载流子,使得晶闸管切换到导通状态。 第二半导体层限定晶闸管的栅极区域。