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51. 发明授权

US07851139B2 Pattern forming method 失效
标题翻译：图案形成方法
公开(公告)号：US07851139B2
公开(公告)日：2010-12-14
申请号：US12257221
申请日：2008-10-23
申请人： Eishi Shiobara , Takehiro Kondoh
发明人： Eishi Shiobara , Takehiro Kondoh
IPC分类号： G03F7/40
CPC分类号： G03F7/40
摘要： A pattern forming method according to an embodiment of the present invention includes forming a resist layer on a semiconductor substrate, selectively exposing the resist layer, developing the selectively exposed resist layer, decomposing photosensitizer in the resist layer after developing the resist layer, removing the photosensitizer or acid generated from the decomposed photosensitizer, applying a shrink material on the developed resist layer after removing the photosensitizer or the acid generated from the decomposed photosensitizer, performing a heating process for the resist layer on which the shrink material is applied, and removing a part of the heat-processed shrink material.
摘要翻译：根据本发明的实施例的图案形成方法包括在半导体衬底上形成抗蚀剂层，选择性地暴露抗蚀剂层，显影选择性曝光的抗蚀剂层，在形成抗蚀剂层之后分解抗蚀剂层中的光敏剂，除去光敏剂或由分解的光敏剂产生的酸，在除去光敏剂或从分解的光敏剂产生的酸之后，在显影的抗蚀剂层上施加收缩材料，对其上施加收缩材料的抗蚀剂层进行加热处理，的热处理收缩材料。

52. 发明申请

US20080003837A1 Substrate processing method and semiconductor device manufacturing method carried out in a lithographic process 审中-公开
标题翻译：基板处理方法和在光刻工艺中进行的半导体器件制造方法
公开(公告)号：US20080003837A1
公开(公告)日：2008-01-03
申请号：US11812015
申请日：2007-06-14
申请人： Kei Hayasaki , Eishi Shiobara
发明人： Kei Hayasaki , Eishi Shiobara
IPC分类号： H01L21/469 , G03C5/00
CPC分类号： H01L21/67109 , G03F7/091 , G03F7/168
摘要： In a substrate processing method, a substrate to be processed coated with a film containing a solvent is heated in a single wafer processing manner. The substrate to be processed is heated for a predetermined time by arranging the substrate to be processed in the proximity of a heated heating plate while passing a gas along a top surface of the substrate to be processed at a predetermined flow rate. The substrate to be processed is cooled to a temperature lower than a sublimation temperature of a substance contained in the film containing the solvent while passing a gas heated to a temperature equal to or higher than the sublimation temperature of the substance contained in the film containing the solvent along the top surface of the substrate to be processed.
摘要翻译：在基板处理方法中，以单晶片处理方式加热涂覆有含有溶剂的膜的被处理基板。将待处理的基板通过在被加热的加热板附近以预定的流速沿着待处理的基板的顶表面通过气体而被加热待加热的基板。待加工的基材被冷却至低于包含在含有溶剂的膜的物质的升华温度的温度，同时通过加热到等于或高于包含在含有该溶剂的膜的物质的升华温度的温度的气体溶剂沿待处理基材的顶表面。

53. 发明授权

US07009148B2 Method of processing a substrate, heating apparatus, and method of forming a pattern 失效
标题翻译：处理基板的方法，加热装置以及形成图案的方法
公开(公告)号：US07009148B2
公开(公告)日：2006-03-07
申请号：US10682419
申请日：2003-10-10
申请人： Kenji Kawano , Shinichi Ito , Eishi Shiobara
发明人： Kenji Kawano , Shinichi Ito , Eishi Shiobara
IPC分类号： F27B5/14
CPC分类号： H01L21/67115 , G03F7/0042 , G03F7/0392 , G03F7/38 , H01L21/0273 , H01L21/67109
摘要： A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically amplified resist film, heating treatment being carried out in a manner of relatively moving a heating section for heating the chemically amplified resist film and the substrate forming a gas stream flowing reverse to the relatively moving direction of the heating section between the lower surface of the heating section and the chemically amplified resist film.
摘要翻译：一种处理衬底的方法，包括在衬底上形成化学放大的抗蚀剂膜，将能量束照射到化学放大的抗蚀剂膜上以在其中形成潜像，对化学放大的抗蚀剂膜进行热处理，加热处理为以相对移动加热部分的方式进行加热，该加热部分用于加热化学放大的抗蚀剂膜和形成在加热部分的下表面和化学放大型抗蚀剂膜之间形成与加热部分的相对移动方向相反的方向流动的气流。

54. 发明授权

US08883405B2 Method for forming pattern 有权
标题翻译：形成图案的方法
公开(公告)号：US08883405B2
公开(公告)日：2014-11-11
申请号：US13595244
申请日：2012-08-27
申请人： Eishi Shiobara
发明人： Eishi Shiobara
IPC分类号： G03F7/20
CPC分类号： G03F7/0046 , G03F7/0045 , G03F7/095 , G03F7/16
摘要： According to one embodiment, a method is disclosed for forming a pattern. The method can include forming a resist film above a subject. The resist film includes a photosensitive material. The resist film has a concentration profile having a concentration of the photosensitive material being higher on a side of a bottom of the resist film than on a side of a surface of the resist film. A portion of the resist film has a maximum concentration of the photosensitive material existing closer to the side of the bottom than a center of the resist film in a thickness direction. The method can include irradiating the resist film with a light from the side of the surface. The method can include developing the resist film after the resist film being irradiated with the light.
摘要翻译：根据一个实施例，公开了一种用于形成图案的方法。该方法可以包括在受试者上方形成抗蚀剂膜。抗蚀剂膜包括感光材料。抗蚀剂膜具有在抗蚀剂膜的底部的一侧的感光材料的浓度高于抗蚀剂膜的表面侧的浓度分布。抗蚀剂膜的一部分在厚度方向上具有比抗蚀剂膜的中心更靠近底部的感光材料的最大浓度。该方法可以包括用来自表面一侧的光照射抗蚀剂膜。该方法可以包括在抗蚀剂膜被光照射之后显影抗蚀剂膜。

55. 发明授权

US08198005B2 Method of forming resist pattern 有权
标题翻译：形成抗蚀剂图案的方法
公开(公告)号：US08198005B2
公开(公告)日：2012-06-12
申请号：US12404917
申请日：2009-03-16
申请人： Eishi Shiobara , Shinichi Ito
发明人： Eishi Shiobara , Shinichi Ito
IPC分类号： G03F7/00 , G03F7/20 , G03B27/52
CPC分类号： G03F7/38 , G03F7/168 , G03F7/70525 , G03F7/7075 , G03F7/70808 , G03F7/70841 , G03F7/70866
摘要： Provided is a method of forming a resist pattern capable of forming a resist pattern, whose dimensional variations and defects are reduced as far as possible, with a high throughput. The invention provides a method of forming a resist pattern involving the following: forming a resist film on a substrate; subjecting the resist film to exposure treatment in a pressure-reduced condition after performing pressure-reducing treatment; performing reduced-pressure releasing treatment that releases the resist film from a pressure-reduced condition while humidifying the resist film by introducing a humidity-adjusted gas into the pressure-reduced environment; performing bake treatment that heats the resist film after the reduced-pressure releasing treatment; and developing the resist film.
摘要翻译：提供了一种形成能够形成抗蚀剂图案的抗蚀剂图案的方法，该抗蚀剂图案的尺寸变化和缺陷尽可能地降低，生产量高。本发明提供一种形成抗蚀剂图案的方法，其包括以下步骤：在基材上形成抗蚀剂膜; 在进行减压处理后，在减压条件下对抗蚀剂膜进行曝光处理; 进行减压释放处理，其通过将经调湿的气体引入减压环境中而将抗蚀剂膜从减压状态释放，同时对抗蚀剂膜进行加湿; 进行减压处理后加热抗蚀剂膜的烘烤处理; 并开发抗蚀膜。

56. 发明授权

US08097398B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US08097398B2
公开(公告)日：2012-01-17
申请号：US12477744
申请日：2009-06-03
申请人： Takehiro Kondoh , Eishi Shiobara
发明人： Takehiro Kondoh , Eishi Shiobara
IPC分类号： G03F7/00 , G03F7/004 , G03F7/26 , G03F7/40
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/0337 , H01L21/0338 , Y10S430/106 , Y10S430/114
摘要： In the method for manufacturing a semiconductor device, a resist film is formed on a substrate and is processed to be provided with openings to form a first resist pattern. Additive-containing layers containing an additive that changes a state of the resist film to a soluble state for a developer are formed so as to cover the first resist pattern. A first resin film having a nature of changing to a soluble state for the developer by containing the additive is formed in the openings of the first resist pattern. The additive is diffused into the first resist pattern and the first resin film to form first and second additive-diffusing portions which can be solved in the developer. The first and second additive-diffusing portions are removed by the developer to form second resist pattern made of remaining portions in the first resist pattern and the first resin film.
摘要翻译：在制造半导体器件的方法中，在衬底上形成抗蚀剂膜，并且加工成具有开口以形成第一抗蚀剂图案。形成含有将抗蚀剂膜的状态改变为显影剂的可溶性状态的添加剂的含有添加剂层，以覆盖第一抗蚀剂图案。在第一抗蚀剂图案的开口中形成具有通过含有添加剂而改变为显影剂的可溶性状态的第一树脂膜。添加剂扩散到第一抗蚀剂图案和第一树脂膜中以形成可以溶解在显影剂中的第一和第二添加剂扩散部分。通过显影剂去除第一和第二添加剂扩散部分，以形成由第一抗蚀剂图案和第一树脂膜中的剩余部分制成的第二抗蚀剂图案。

57. 发明授权

US07687279B2 Evaluation method for chemical solution, qualification method for chemical solution and method for manufacturing semiconductor device 失效
标题翻译：化学溶液的评价方法，化学溶液的鉴定方法以及半导体装置的制造方法
公开(公告)号：US07687279B2
公开(公告)日：2010-03-30
申请号：US11105362
申请日：2005-04-14
申请人： Shinichi Ito , Eishi Shiobara
发明人： Shinichi Ito , Eishi Shiobara
IPC分类号： G01N33/00
CPC分类号： G01N15/02 , G01N2015/0053 , Y10T436/25 , Y10T436/2575
摘要： A method for evaluating chemical solution includes determining number of particles in liquid for each size of the particles by measurement, expressing a relationship between size of the particles and number of particles corresponding to the size by a function based on the number of particles for each size of the particles determined by the measurement, and evaluating influence of particles having size less than or equal to a measurement limit in the liquid based on the function.
摘要翻译：用于评估化学溶液的方法包括通过测量确定每种尺寸的颗粒的液体中的颗粒数量，通过基于每种尺寸的颗粒数量来表示颗粒尺寸与颗粒尺寸之间的关系与基于颗粒数的函数关系通过测量确定的颗粒，并且基于该功能评估液体中尺寸小于或等于测量极限的颗粒的影响。

58. 发明授权

US07662542B2 Pattern forming method and semiconductor device manufacturing method 失效
标题翻译：图案形成方法和半导体器件制造方法
公开(公告)号：US07662542B2
公开(公告)日：2010-02-16
申请号：US11342048
申请日：2006-01-30
申请人： Eishi Shiobara , Takehiro Kondoh , Yuji Kobayashi , Koutarou Sho
发明人： Eishi Shiobara , Takehiro Kondoh , Yuji Kobayashi , Koutarou Sho
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/0276 , H01L21/3088 , Y10S430/151
摘要： A pattern forming method includes the following steps. A resist pattern is formed on a to-be-processed film. A mask pattern including the resist pattern and a resin film formed on a surface of the resist pattern is formed. Slimming of the mask pattern is executed.
摘要翻译：图案形成方法包括以下步骤。在被处理膜上形成抗蚀剂图案。形成包括形成在抗蚀图案的表面上的抗蚀剂图案和树脂膜的掩模图案。执行掩模图案的减肥。

59. 发明授权

US07368209B2 Method for evaluating sensitivity of photoresist, method for preparation of photoresist and manufacturing method of semiconductor device 有权
标题翻译：光刻胶的灵敏度评价方法，光刻胶的制备方法及半导体装置的制造方法
公开(公告)号：US07368209B2
公开(公告)日：2008-05-06
申请号：US10855380
申请日：2004-05-28
申请人： Eishi Shiobara , Kei Hayasaki , Tadahito Fujisawa , Shinichi Ito
发明人： Eishi Shiobara , Kei Hayasaki , Tadahito Fujisawa , Shinichi Ito
IPC分类号： G03C5/00 , G03F9/00
CPC分类号： G03F7/70608
摘要： An method for evaluating sensitivity of a photoresist includes transferring an exposure dose monitor mark onto an inspection resist film with an inspection setting exposure dose using an exposure tool. Inspection sensitivity index varying according to the inspection setting exposure dose is measured, using an inspection transferred image of the exposure dose monitor mark delineated on the inspection resist film. An inspection photoresist sensitivity of the inspection resist film is calculated using sensitivity calibration data, based on the inspection sensitivity index.
摘要翻译：用于评估光致抗蚀剂的灵敏度的方法包括使用曝光工具以曝光剂量的曝光剂量将曝光剂量监测标记转移到检查抗蚀剂膜上。使用在检查抗蚀剂膜上划定的曝光剂量监视标记的检查转印图像，测量根据检查设定曝光剂量而变化的检查灵敏度指数。基于检查灵敏度指数，使用灵敏度校准数据计算检查抗蚀剂膜的检查光致抗蚀剂敏感性。

60. 发明申请

US20080073286A1 Waste liquid processing method in semiconductor manufacturing process and substrate processing apparatus 审中-公开
标题翻译：半导体制造工艺中的废液处理方法及基板处理装置
公开(公告)号：US20080073286A1
公开(公告)日：2008-03-27
申请号：US11902452
申请日：2007-09-21
申请人： Eishi Shiobara
发明人： Eishi Shiobara
IPC分类号： B05C11/10 , C02F1/00
CPC分类号： G05D11/133 , C02F1/008 , C02F2103/346
摘要： This invention discloses a waste liquid processing method in a semiconductor manufacturing process. The waste liquids of a plurality of chemical solutions are mixed. The mixing ratio of the plurality of solutions in a waste liquid mixture generated by mixing is obtained. It is determined whether the obtained mixing ratio satisfies or is predicted not to satisfy a predetermined condition. If the mixing ratio does not satisfy or is predicted not to satisfy the condition, the waste liquid mixture is diluted with a diluent to satisfy the condition.
摘要翻译：本发明公开了一种半导体制造工序中的废液处理方法。将多种化学溶液的废液混合。获得通过混合产生的废液混合物中的多种溶液的混合比。确定所获得的混合比是否满足或被预测为不满足预定条件。如果混合比不满足或预测不满足条件，则用稀释剂稀释废液混合物以满足条件。

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