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51. 发明授权

US08440502B2 Semiconductor device and method for manufacturing the semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08440502B2
公开(公告)日：2013-05-14
申请号：US13228486
申请日：2011-09-09
申请人： Kengo Akimoto , Masashi Tsubuku
发明人： Kengo Akimoto , Masashi Tsubuku
IPC分类号： H01L21/84
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/41733
摘要： An object is to suppress deterioration of element characteristics even when an oxide semiconductor is formed after a gate insulating layer, a source electrode layer, and a drain electrode layer are formed. A gate electrode layer is formed over a substrate. A gate insulating layer is formed over the gate electrode layer. A source electrode layer and a drain electrode layer are formed over the gate insulating layer. Surface treatment is performed on surfaces of the gate insulating layer, the source electrode layer, and the drain electrode layer which are formed over the substrate. After the surface treatment is performed, an oxide semiconductor layer is formed over the gate insulating layer, the source electrode layer, and the drain electrode layer.
摘要翻译：即使在形成了栅极绝缘层，源极电极层和漏极电极层之后形成氧化物半导体，也是要抑制元件特性的劣化。在基板上形成栅极电极层。在栅电极层上形成栅极绝缘层。源极电极层和漏电极层形成在栅绝缘层上。在形成在基板上的栅极绝缘层，源极电极层和漏极电极层的表面上进行表面处理。在进行表面处理之后，在栅极绝缘层，源极电极层和漏极电极层上形成氧化物半导体层。

52. 发明授权

US08426868B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08426868B2
公开(公告)日：2013-04-23
申请号：US12604622
申请日：2009-10-23
申请人： Kengo Akimoto , Toshinari Sasaki
发明人： Kengo Akimoto , Toshinari Sasaki
IPC分类号： H01L21/02
CPC分类号： H01L29/7869 , G02F1/1368 , G02F1/167 , H01L27/1225 , H01L27/1248 , H01L27/1259 , H01L27/127 , H01L27/3262 , H01L29/04 , H01L29/24 , H01L29/42356 , H01L29/45 , H01L29/66742 , H01L29/66969 , H01L29/78618 , H01L29/78693 , H01L29/78696
摘要： An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed.
摘要翻译：目的是提高使用氧化物半导体的薄膜晶体管的场效应迁移率。另一个目的是抑制即使在具有改善的场效应迁移率的薄膜晶体管中，关断电流的增加。在使用氧化物半导体层的薄膜晶体管中，通过形成具有比氧化物半导体层和栅极绝缘层之间的氧化物半导体层更高的导电性和更小的厚度的半导体层，薄膜晶体管的场效应迁移率可以是可以抑制切断电流的提高。

53. 发明授权

US08399337B2 Method for manufacturing SOI substrate and method for manufacturing semiconductor device 有权
公开(公告)号：US08399337B2
公开(公告)日：2013-03-19
申请号：US13045810
申请日：2011-03-11
申请人： Kengo Akimoto , Yuta Endo
发明人： Kengo Akimoto , Yuta Endo
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A highly reliable semiconductor device capable of high speed operation is manufactured over a flexible substrate at a high yield. A separation layer is formed over an insulating substrate by a sputtering method; the separation layer is flattened by a reverse sputtering method; an insulating film is formed over the flattened separation layer; a damaged area is formed by introducing hydrogen or the like into a semiconductor substrate; an insulating film is formed over the semiconductor substrate in which the damaged area is formed; the insulating film formed over the insulating substrate is bonded to the insulating film formed over the semiconductor substrate, the semiconductor substrate is separated at the damaged area so that a semiconductor layer is formed over the insulating substrate; the semiconductor layer is flattened so as to form an SOI substrate; and the semiconductor device is formed over the SOI substrate.

54. 发明授权

US08399313B2 Method of manufacturing semiconductor device having first conductive layer including aluminum 有权
标题翻译：制造具有包括铝的第一导电层的半导体器件的方法
公开(公告)号：US08399313B2
公开(公告)日：2013-03-19
申请号：US13186170
申请日：2011-07-19
申请人： Kengo Akimoto , Hotaka Maruyama
发明人： Kengo Akimoto , Hotaka Maruyama
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/02672 , H01L21/02422 , H01L21/02532 , H01L21/2022 , H01L21/2026 , H01L21/3221 , H01L27/124 , H01L27/1277 , H01L29/4908 , H01L29/66765 , H01L29/78678
摘要： A gate electrode is formed by forming a first conductive layer containing aluminum as its main component over a substrate, forming a second conductive layer made from a material different from that used for forming the first conductive layer over the first conductive layer; and patterning the first conductive layer and the second conductive layer. Further, the first conductive layer includes one or more selected from carbon, chromium, tantalum, tungsten, molybdenum, titanium, silicon, and nickel. And the second conductive layer includes one or more selected from chromium, tantalum, tungsten, molybdenum, titanium, silicon, and nickel, or nitride of these materials.
摘要翻译：通过在衬底上形成以铝作为主要成分的第一导电层形成栅电极，形成由不同于在第一导电层上形成第一导电层的材料制成的材料制成的第二导电层; 以及图案化第一导电层和第二导电层。此外，第一导电层包括选自碳，铬，钽，钨，钼，钛，硅和镍中的一种或多种。并且第二导电层包括选自铬，钽，钨，钼，钛，硅和镍中的一种或多种，或这些材料的氮化物。

55. 发明授权

US08389988B2 Display device 有权
公开(公告)号：US08389988B2
公开(公告)日：2013-03-05
申请号：US12571554
申请日：2009-10-01
申请人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
发明人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
IPC分类号： H01L28/72
CPC分类号： G02F1/136204 , H01L27/0248 , H01L27/1225 , H01L27/124 , H01L33/0041 , H01L2924/0002 , H01L2924/00
摘要： In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.

56. 发明授权

US08373443B2 Logic circuit 有权
公开(公告)号：US08373443B2
公开(公告)日：2013-02-12
申请号：US13116372
申请日：2011-05-26
申请人： Jun Koyama , Kengo Akimoto , Masashi Tsubuku
发明人： Jun Koyama , Kengo Akimoto , Masashi Tsubuku
IPC分类号： H03K19/20 , H03K19/094
CPC分类号： H03K19/094 , H01L27/0883 , H01L27/1225 , H03K19/09407 , H03K19/09421 , H03K19/096
摘要： An object is to apply a transistor using an oxide semiconductor to a logic circuit including an enhancement transistor. The logic circuit includes a depletion transistor 101 and an enhancement transistor 102. The transistors 101 and 102 each include a gate electrode, a gate insulating layer, a first oxide semiconductor layer, a second oxide semiconductor layer, a source electrode, and a drain electrode. The transistor 102 includes a reduction prevention layer provided over a region in the first oxide semiconductor layer between the source electrode and the drain electrode.

57. 发明授权

US08343817B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US08343817B2
公开(公告)日：2013-01-01
申请号：US12535713
申请日：2009-08-05
申请人： Hidekazu Miyairi , Kengo Akimoto , Yasuo Nakamura
发明人： Hidekazu Miyairi , Kengo Akimoto , Yasuo Nakamura
IPC分类号： H01L21/00
CPC分类号： H01L29/78696 , H01L21/02323 , H01L21/02565 , H01L21/32139 , H01L21/465 , H01L21/467 , H01L21/4763 , H01L21/47635 , H01L27/1225 , H01L29/0692 , H01L29/1033 , H01L29/24 , H01L29/263 , H01L29/42364 , H01L29/42384 , H01L29/4908 , H01L29/495 , H01L29/513 , H01L29/518 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/78618 , H01L29/78633 , H01L29/7869 , H01L29/78693
摘要： To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.

58. 发明授权

US08329506B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08329506B2
公开(公告)日：2012-12-11
申请号：US12618944
申请日：2009-11-16
申请人： Kengo Akimoto , Junichiro Sakata , Takuya Hirohashi , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga
发明人： Kengo Akimoto , Junichiro Sakata , Takuya Hirohashi , Masahiro Takahashi , Hideyuki Kishida , Akiharu Miyanaga
IPC分类号： H01L21/00
CPC分类号： H01L29/7869 , H01L21/02565 , H01L21/28079 , H01L21/28158 , H01L29/04 , H01L29/66742 , H01L29/66969 , H01L29/78693
摘要： It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).
摘要翻译：本发明的目的是提供一种适用于半导体器件的氧化物半导体。或者，另一目的是提供一种使用氧化物半导体的半导体器件。提供了在晶体管的沟道形成区域中包括In-Ga-Zn-O系氧化物半导体层的半导体器件。在半导体器件中，In-Ga-Zn-O系氧化物半导体层具有以InGaO 3（ZnO）m（m = 1）表示的晶粒包含在由InGaO 3（ZnO）m（ m> 0）。

59. 发明授权

US08318551B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08318551B2
公开(公告)日：2012-11-27
申请号：US12627204
申请日：2009-11-30
申请人： Kengo Akimoto , Toshinari Sasaki
发明人： Kengo Akimoto , Toshinari Sasaki
IPC分类号： H01L21/84 , H01L29/10 , H01L29/12
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/41733 , H01L29/66969
摘要： A gate electrode layer over a substrate; a gate insulating layer over the gate electrode layer; a first source electrode layer and a first drain electrode layer over the gate insulating layer; an oxide semiconductor layer over the gate insulating layer; and a second source electrode layer and a second drain electrode layer over the oxide semiconductor layer. A first part, a second part, and a third part of a bottom surface are in contact with the first source electrode layer, the first drain electrode layer, and the gate insulating layer respectively. A first part and a second part of the top surface are in contact with the second source electrode layer and the second drain electrode layer respectively. The first source electrode layer and the first drain electrode layer are electrically connected to the second source electrode layer and the second drain electrode layer respectively.
摘要翻译：衬底上的栅电极层; 栅电极层上的栅极绝缘层; 栅极绝缘层上的第一源极电极层和第一漏极电极层; 栅极绝缘层上的氧化物半导体层; 以及在所述氧化物半导体层上的第二源极电极层和第二漏极电极层。第一部分，第二部分和底部表面的第三部分分别与第一源极电极层，第一漏极电极层和栅极绝缘层接触。上表面的第一部分和第二部分分别与第二源极电极层和第二漏极电极层接触。第一源极电极层和第一漏极电极层分别与第二源极电极层和第二漏极电极层电连接。

60. 发明授权

US08288199B2 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US08288199B2
公开(公告)日：2012-10-16
申请号：US12184401
申请日：2008-08-01
申请人： Kengo Akimoto , Tatsuya Honda , Norihito Sone
发明人： Kengo Akimoto , Tatsuya Honda , Norihito Sone
IPC分类号： H01L21/00
摘要： An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

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