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1. 发明授权

US08399337B2 Method for manufacturing SOI substrate and method for manufacturing semiconductor device 有权
公开(公告)号：US08399337B2
公开(公告)日：2013-03-19
申请号：US13045810
申请日：2011-03-11
申请人： Kengo Akimoto , Yuta Endo
发明人： Kengo Akimoto , Yuta Endo
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A highly reliable semiconductor device capable of high speed operation is manufactured over a flexible substrate at a high yield. A separation layer is formed over an insulating substrate by a sputtering method; the separation layer is flattened by a reverse sputtering method; an insulating film is formed over the flattened separation layer; a damaged area is formed by introducing hydrogen or the like into a semiconductor substrate; an insulating film is formed over the semiconductor substrate in which the damaged area is formed; the insulating film formed over the insulating substrate is bonded to the insulating film formed over the semiconductor substrate, the semiconductor substrate is separated at the damaged area so that a semiconductor layer is formed over the insulating substrate; the semiconductor layer is flattened so as to form an SOI substrate; and the semiconductor device is formed over the SOI substrate.

2. 发明申请

US20090075456A1 Method for manufacturing SOI substrate and method for manufacturing semiconductor device 有权
标题翻译：制造SOI衬底的方法和半导体器件的制造方法
公开(公告)号：US20090075456A1
公开(公告)日：2009-03-19
申请号：US12232131
申请日：2008-09-11
申请人： Kengo Akimoto , Yuta Endo
发明人： Kengo Akimoto , Yuta Endo
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： A highly reliable semiconductor device capable of high speed operation is manufactured over a flexible substrate at a high yield. A separation layer is formed over an insulating substrate by a sputtering method; the separation layer is flattened by a reverse sputtering method; an insulating film is formed over the flattened separation layer; a damaged area is formed by introducing hydrogen or the like into a semiconductor substrate; an insulating film is formed over the semiconductor substrate in which the damaged area is formed; the insulating film formed over the insulating substrate is bonded to the insulating film formed over the semiconductor substrate, the semiconductor substrate is separated at the damaged area so that a semiconductor layer is formed over the insulating substrate; the semiconductor layer is flattened so as to form an SOI substrate; and the semiconductor device is formed over the SOI substrate.
摘要翻译：以高产率在柔性基板上制造能够进行高速运转的高度可靠的半导体装置。通过溅射法在绝缘基板上形成分离层; 分离层通过反溅射法平坦化; 在平坦化的分离层上形成绝缘膜; 通过将氢等引入到半导体衬底中形成损伤区域; 在形成有损坏区域的半导体基板上形成绝缘膜; 形成在绝缘基板上的绝缘膜与半导体衬底上形成的绝缘膜接合，半导体衬底在损坏区域分离，从而在绝缘衬底上形成半导体层; 半导体层被平坦化以形成SOI衬底; 并且半导体器件形成在SOI衬底上。

3. 发明授权

US07951689B2 Method for manufacturing SOI substrate and method for manufacturing semiconductor device 有权
标题翻译：制造SOI衬底的方法和半导体器件的制造方法
公开(公告)号：US07951689B2
公开(公告)日：2011-05-31
申请号：US12232131
申请日：2008-09-11
申请人： Kengo Akimoto , Yuta Endo
发明人： Kengo Akimoto , Yuta Endo
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： A highly reliable semiconductor device capable of high speed operation is manufactured over a flexible substrate at a high yield. A separation layer is formed over an insulating substrate by a sputtering method; the separation layer is flattened by a reverse sputtering method; an insulating film is formed over the flattened separation layer; a damaged area is formed by introducing hydrogen or the like into a semiconductor substrate; an insulating film is formed over the semiconductor substrate in which the damaged area is formed; the insulating film formed over the insulating substrate is bonded to the insulating film formed over the semiconductor substrate, the semiconductor substrate is separated at the damaged area so that a semiconductor layer is formed over the insulating substrate; the semiconductor layer is flattened so as to form an SOI substrate; and the semiconductor device is formed over the SOI substrate.
摘要翻译：以高产率在柔性基板上制造能够进行高速运转的高度可靠的半导体装置。通过溅射法在绝缘基板上形成分离层; 分离层通过反溅射法平坦化; 在平坦化的分离层上形成绝缘膜; 通过将氢等引入到半导体衬底中形成损伤区域; 在形成有损坏区域的半导体基板上形成绝缘膜; 形成在绝缘基板上的绝缘膜与半导体衬底上形成的绝缘膜接合，半导体衬底在损坏区域分离，从而在绝缘衬底上形成半导体层; 半导体层被平坦化以形成SOI衬底; 并且半导体器件形成在SOI衬底上。

4. 发明授权

US09472676B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09472676B2
公开(公告)日：2016-10-18
申请号：US13422251
申请日：2012-03-16
申请人： Yuki Imoto , Tetsunori Maruyama , Yuta Endo
发明人： Yuki Imoto , Tetsunori Maruyama , Yuta Endo
IPC分类号： H01L29/786 , H01L27/32 , H01L51/05
CPC分类号： H01L29/7869 , H01L27/3274 , H01L51/0545
摘要： A semiconductor device having excellent electric characteristics and a method for manufacturing the semiconductor device are provided. A method for manufacturing a semiconductor device includes the steps of: forming a gate electrode; forming a gate insulating film to cover the gate electrode; forming an oxide semiconductor film over the gate insulating film; forming a hydrogen permeable film over the oxide semiconductor film; forming a hydrogen capture film over the hydrogen permeable film; performing heat treatment to release hydrogen from the oxide semiconductor film; forming a source electrode and a drain electrode to be in contact with a part of the oxide semiconductor film; and removing an exposed portion of the hydrogen capture film to form a channel protective film formed of the hydrogen permeable film. A semiconductor device manufactured by the above method is also provided.
摘要翻译：提供了具有优异的电特性的半导体器件和制造该半导体器件的方法。一种制造半导体器件的方法包括以下步骤：形成栅电极; 形成栅绝缘膜以覆盖栅电极; 在所述栅极绝缘膜上形成氧化物半导体膜; 在所述氧化物半导体膜上形成氢渗透膜; 在氢可渗透膜上形成氢捕获膜; 进行热处理以从氧化物半导体膜释放氢; 形成与所述氧化物半导体膜的一部分接触的源电极和漏电极; 并除去氢捕获膜的暴露部分以形成由氢可渗透膜形成的通道保护膜。还提供了通过上述方法制造的半导体器件。

5. 发明授权

US08890150B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08890150B2
公开(公告)日：2014-11-18
申请号：US13353608
申请日：2012-01-19
申请人： Toshinari Sasaki , Kosei Noda , Yuta Endo
发明人： Toshinari Sasaki , Kosei Noda , Yuta Endo
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00 , H01L29/786
CPC分类号： H01L29/78696 , H01L29/045 , H01L29/24 , H01L29/247 , H01L29/7869 , H01L29/78693
摘要： A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. A p-type oxide semiconductor material is contained in an n-type oxide semiconductor film, whereby carriers which are generated in the oxide semiconductor film without intention can be reduced. This is because electrons generated in the n-type oxide semiconductor film without intention are recombined with holes generated in the p-type oxide semiconductor material to disappear. Accordingly, it is possible to reduce carriers which are generated in the oxide semiconductor film without intention.
摘要翻译：通过对使用氧化物半导体膜的晶体管赋予稳定的电特性来制造高可靠性的半导体器件。 p型氧化物半导体材料包含在n型氧化物半导体膜中，由此可以减少在氧化物半导体膜中产生的载流子。这是因为在n型氧化物半导体膜中产生的电子没有意图与在p型氧化物半导体材料中产生的空穴重新组合而消失。因此，可以无意地减少在氧化物半导体膜中产生的载流子。

6. 发明授权

US08802515B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08802515B2
公开(公告)日：2014-08-12
申请号：US13289436
申请日：2011-11-04
申请人： Yuta Endo , Toshinari Sasaki , Kosei Noda
发明人： Yuta Endo , Toshinari Sasaki , Kosei Noda
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/66969 , H01L21/02 , H01L21/02112 , H01L21/02403 , H01L21/28 , H01L21/425 , H01L21/477 , H01L29/42384 , H01L29/518 , H01L29/78618 , H01L29/7869
摘要： A semiconductor device is manufactured using a transistor in which an oxide semiconductor is included in a channel region and variation in electric characteristics due to a short-channel effect is less likely to be caused. The semiconductor device includes an oxide semiconductor film having a pair of oxynitride semiconductor regions including nitrogen and an oxide semiconductor region sandwiched between the pair of oxynitride semiconductor regions, a gate insulating film, and a gate electrode provided over the oxide semiconductor region with the gate insulating film positioned therebetween. Here, the pair of oxynitride semiconductor regions serves as a source region and a drain region of the transistor, and the oxide semiconductor region serves as the channel region of the transistor.
摘要翻译：使用其中氧化物半导体包括在沟道区域中的晶体管制造半导体器件，并且不太可能引起由于短沟道效应引起的电特性的变化。半导体器件包括具有一对氧氮化物半导体区域的氧化物半导体膜，该氧氮化物半导体区域包括氮和夹在一对氧氮化物半导体区域之间的氧化物半导体区域，栅极绝缘膜和设置在氧化物半导体区域上的栅电极，栅极绝缘胶片位于其间。这里，一对氧氮化物半导体区域用作晶体管的源极区域和漏极区域，氧化物半导体区域用作晶体管的沟道区域。

7. 发明授权

US08766329B2 Semiconductor device and a method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08766329B2
公开(公告)日：2014-07-01
申请号：US13523262
申请日：2012-06-14
申请人： Yuta Endo , Yuki Imoto , Yuko Takabayashi , Yasumasa Yamane
发明人： Yuta Endo , Yuki Imoto , Yuko Takabayashi , Yasumasa Yamane
IPC分类号： H01L27/085
CPC分类号： H01L29/7869 , H01L29/045 , H01L29/4908 , H01L29/66969 , H01L29/78603
摘要： A transistor in which an electron state at an interface between an oxide semiconductor film and an underlayer film in contact with the oxide semiconductor film is favorable is provided. A value obtained by dividing a difference between nearest neighbor interatomic distance of the underlayer film within the interface and a lattice constant of the semiconductor film by the nearest neighbor interatomic distance of the underlayer film within the interface is less than or equal to 0.15. For example, an oxide semiconductor film is deposited over an underlayer film which contains stabilized zirconia which has a cubic crystal structure and has the (111) plane orientation, whereby the oxide semiconductor film including a crystal region having a high degree of crystallization can be provided directly on the underlayer film.
摘要翻译：提供了其中与氧化物半导体膜接触的氧化物半导体膜和下层膜之间的界面处的电子态是有利的晶体管。通过将界面内的下层膜的最近邻原子间距离与半导体膜的晶格常数之间的差除以界面内的下层膜的最近相邻原子间距离而得到的值小于或等于0.15。例如，氧化物半导体膜沉积在含有稳定的具有立方晶体结构并具有（111）面取向的氧化锆的下层膜上，由此可以提供包括具有高结晶度的晶体区域的氧化物半导体膜直接在下层膜上。

8. 发明授权

US08519387B2 Semiconductor device and method for manufacturing 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08519387B2
公开(公告)日：2013-08-27
申请号：US13185779
申请日：2011-07-19
申请人： Yuta Endo , Kosei Noda , Toshinari Sasaki
发明人： Yuta Endo , Kosei Noda , Toshinari Sasaki
IPC分类号： H01L29/10
CPC分类号： H01L29/66969 , H01L21/02164 , H01L21/02367 , H01L21/02565 , H01L21/02631 , H01L29/66742 , H01L29/78603 , H01L29/78618 , H01L29/7869
摘要： An insulating layer which releases a large amount of oxygen is used as an insulating layer in contact with a channel region of an oxide semiconductor layer, and an insulating layer which releases a small amount of oxygen is used as an insulating layer in contact with a source region and a drain region of the oxide semiconductor layer. By releasing oxygen from the insulating layer which releases a large amount of oxygen, oxygen deficiency in the channel region and an interface state density between the insulating layer and the channel region can be reduced, so that a highly reliable semiconductor device having small variation in electrical characteristics can be manufactured. The source region and the drain region are provided in contact with the insulating layer which releases a small amount of oxygen, thereby suppressing the increase of the resistance of the source region and the drain region.
摘要翻译：使用释放大量氧的绝缘层作为与氧化物半导体层的沟道区域接触的绝缘层，并且使用释放少量氧的绝缘层作为与源极接触的绝缘层区域和氧化物半导体层的漏极区域。通过从释放大量氧的绝缘层释放氧气，可以减少沟道区域中的氧缺乏以及绝缘层和沟道区域之间的界面态密度，从而可以降低电子变化小的高度可靠的半导体器件特性可以制造。源极区域和漏极区域设置成与释放少量氧气的绝缘层接触，从而抑制源极区域和漏极区域的电阻的增加。

9. 发明授权

US08518762B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08518762B2
公开(公告)日：2013-08-27
申请号：US13171834
申请日：2011-06-29
申请人： Tetsuhiro Tanaka , Yuta Endo
发明人： Tetsuhiro Tanaka , Yuta Endo
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/458 , H01L21/76804 , H01L21/76834 , H01L21/76882 , H01L21/76883
摘要： Provided is a method for manufacturing a semiconductor device having favorable electric characteristics with a high yield. A groove and/or a contact hole reaching a semiconductor region or a conductive region is formed in an insulating film covering the semiconductor region or the conductive region; a first conductive film is formed in the groove and/or the contact hole; the first conductive film is exposed to plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas and to an atmosphere containing water to be fluidized partially or entirely; and a second conductive film is formed over the first conductive film.
摘要翻译：提供一种以高产率制造具有良好的电特性的半导体器件的方法。在覆盖半导体区域或导电区域的绝缘膜中形成到达半导体区域或导电区域的沟槽和/或接触孔; 在沟槽和/或接触孔中形成第一导电膜; 第一导电膜暴露于由氧化性气体和卤素系气体的混合气体产生的等离子体，并且含有水的气氛部分或全部被流化; 并且在第一导电膜上形成第二导电膜。

10. 发明申请

US20120153275A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120153275A1
公开(公告)日：2012-06-21
申请号：US13316604
申请日：2011-12-12
申请人： Yuta Endo , Toshinari Sasaki , Kosei Noda , Hitomi Sato , Yuhei Sato
发明人： Yuta Endo , Toshinari Sasaki , Kosei Noda , Hitomi Sato , Yuhei Sato
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/4908 , H01L21/28088 , H01L21/288 , H01L27/1225 , H01L29/42384 , H01L29/66742 , H01L29/7869
摘要： To manufacture a transistor whose threshold voltage is controlled without using a backgate electrode, a circuit for controlling the threshold voltage, and an impurity introduction method. To manufacture a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption using the transistor. A gate electrode including a tungsten oxide film whose composition is controlled is used. The composition or the like is adjusted by a film formation method of the tungsten oxide film, whereby the work function can be controlled. By using the tungsten oxide film whose work function is controlled as part of the gate electrode, the threshold of the transistor can be controlled. Using the transistor whose threshold voltage is controlled, a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption can be manufactured.
摘要翻译：制造在不使用背栅电极的情况下控制阈值电压的晶体管，用于控制阈值电压的电路和杂质导入方法。使用晶体管制造具有良好的电特性，高可靠性和低功耗的半导体器件。使用包含其组成被控制的氧化钨膜的栅电极。通过氧化钨膜的成膜方法调整组合物等，由此可以控制功函数。通过使用功函数被控制为栅电极的一部分的氧化钨膜，可以控制晶体管的阈值。通过使用阈值电压被控制的晶体管，可以制造具有良好的电特性，高可靠性和低功耗的半导体器件。

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