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51. 发明授权

US08946863B2 Epitaxial substrate for electronic device comprising a high resistance single crystal substrate on a low resistance single crystal substrate, and method of manufacturing 有权
标题翻译：包含低电阻单晶衬底上的高电阻单晶衬底的电子器件外延衬底及其制造方法
公开(公告)号：US08946863B2
公开(公告)日：2015-02-03
申请号：US13388804
申请日：2010-08-02
申请人： Tetsuya Ikuta , Daisuke Hino , Ryo Sakamoto , Tomohiko Shibata
发明人： Tetsuya Ikuta , Daisuke Hino , Ryo Sakamoto , Tomohiko Shibata
IPC分类号： H01L29/66 , H01L29/778 , H01L21/18 , H01L29/812 , H01L21/02
CPC分类号： H01L29/7786 , H01L21/02381 , H01L21/02488 , H01L21/0254 , H01L21/02658 , H01L21/187 , H01L29/66462 , H01L29/66863 , H01L29/812
摘要： An epitaxial substrate for electronic devices, in which current flows in a lateral direction and of which warpage configuration is properly controlled, and a method of producing the same. The epitaxial substrate for electronic devices is produced by forming a bonded substrate by bonding a low-resistance Si single crystal substrate and a high-resistance Si single crystal substrate together; forming a buffer as an insulating layer on a surface of the bonded substrate on the high-resistance Si single crystal substrate side; and producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate. The resistivity of the low-resistance Si single crystal substrate is 100 Ω·cm or less, and the resistivity of the high-resistance Si single crystal substrate is 1000 Ω·cm or more.
摘要翻译：电流装置的外延基板及其制造方法，其中电流沿横向流动并且翘曲构造被适当地控制。通过将低电阻Si单晶衬底和高电阻Si单晶衬底结合在一起来形成键合衬底来制造电子器件外延衬底; 在高电阻Si单晶衬底侧的键合衬底的表面上形成缓冲层作为绝缘层; 以及通过在缓冲器上外延生长多个III族氮化物层以形成主层压板来制造外延衬底。低电阻Si单晶衬底的电阻率为100Ω·cm·cm以下，高电阻Si单晶衬底的电阻率为1000Ω·cm·cm以上。

52. 发明申请

US20130336819A1 CENTRIFUGAL BLOWER AND VEHICLE AIR CONDITIONER PROVIDED WITH THE SAME 有权
标题翻译：离心风机和车载空调器
公开(公告)号：US20130336819A1
公开(公告)日：2013-12-19
申请号：US14002287
申请日：2012-05-24
申请人： Takayuki Kobayashi , Kenichi Terauchi , Atsushi Suzuki , Tomohiko Shibata , Junichiro Hara , Yasuhiro Watanabe , Kazuyuki Kamiya
发明人： Takayuki Kobayashi , Kenichi Terauchi , Atsushi Suzuki , Tomohiko Shibata , Junichiro Hara , Yasuhiro Watanabe , Kazuyuki Kamiya
IPC分类号： F04D29/42
CPC分类号： F04D29/422 , F04D29/086 , F04D29/4226 , F04D29/426 , F04D29/705 , F04D29/708 , F05D2260/602
摘要： A centrifugal blower includes a centrifugal fan; an electric motor that rotationally drives the centrifugal fan; a fan case that has an air inlet and an air outlet and that internally accommodates the centrifugal fan; and an electric motor case (8) that has a cylinder (6) accommodating the electric motor and a flange portion (7) extending radially outward from the cylinder (6) and that is fitted to the fan case. The flange portion (7) is provided with a ring-shaped rib portion (20) that protrudes from the flange portion (7); the ring-shaped rib portion (20) is provided with a plurality of slits (22a and 22b) that extend from the flange portion (7) in the axial direction of the cylinder (6); and the flange portion (7) between the ring-shaped rib portion (20) and the cylinder (6) is inclined in a circumferential direction toward the slits (22a and 22b).
摘要翻译：离心式鼓风机包括离心风机; 旋转驱动离心风扇的电动机; 具有空气入口和空气出口并且内部容纳离心风扇的风扇壳体; 以及具有容纳电动机的汽缸（6）和从汽缸（6）径向向外延伸并安装在风扇壳体上的凸缘部（7）的电动机壳体（8）。凸缘部（7）设置有从凸缘部（7）突出的环状的肋部（20）。所述环状肋部（20）具有从所述凸缘部（7）沿所述圆筒（6）的轴向延伸的多个狭缝（22a，22b）。并且环形肋部（20）和圆筒（6）之间的凸缘部（7）朝向狭缝（22a和22b）沿圆周方向倾斜。

53. 发明申请

US20120223328A1 GROUP III NITRIDE EPITAXIAL LAMINATE SUBSTRATE 有权
标题翻译： III类氮化物外延层压板
公开(公告)号：US20120223328A1
公开(公告)日：2012-09-06
申请号：US13502847
申请日：2010-11-04
申请人： Tetsuya Ikuta , Jo Shimizu , Tomohiko Shibata
发明人： Tetsuya Ikuta , Jo Shimizu , Tomohiko Shibata
IPC分类号： H01L29/205
CPC分类号： H01L29/2003 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/155 , H01L29/205
摘要： A Group III nitride epitaxial laminate substrate comprising a substrate, a buffer and a main laminate in this order, wherein the buffer includes an initial growth layer, a first superlattice laminate and a second superlattice laminate in this order, the first superlattice laminate includes five to 20 sets of first AlN layers and second GaN layers, the first AlN layers and the second GaN layers being alternately stacked, and each one set of the first AlN layer and the second GaN layer has a thickness of less than 44 nm, the second superlattice laminate includes a plurality of sets of first layers made of an AlN material or an AlGaN material and second layers made of an AlGaN material having a different band gap from the first layers, the first and second layers being alternately stacked.
摘要翻译：一种III族氮化物外延层叠基板，其依次包括基板，缓冲层和主层压板，其中缓冲层依次包括初始生长层，第一超晶格层压板和第二超晶格层压板，第一超晶格层压板包括五个至 20组第一AlN层和第二GaN层，第一AlN层和第二GaN层交替层叠，并且每组第一AlN层和第二GaN层的厚度小于44nm，第二超晶格层叠体包括由AlN材料或AlGaN材料制成的多组第一层和由与第一层具有不同带隙的AlGaN材料制成的第二层，第一层和第二层交替堆叠。

54. 发明申请

US20120168719A1 EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE, IN WHICH CURRENT FLOWS IN LATERAL DIRECTION AND METHOD OF PRODUCING THE SAME 有权
标题翻译：用于电子设备的外来衬底，其中沿着横向的电流流动及其生产方法
公开(公告)号：US20120168719A1
公开(公告)日：2012-07-05
申请号：US13384006
申请日：2010-07-13
申请人： Tetsuya Ikuta , Daisuke Hino , Ryo Sakamoto , Tomohiko Shibata
发明人： Tetsuya Ikuta , Daisuke Hino , Ryo Sakamoto , Tomohiko Shibata
IPC分类号： H01L29/06 , H01L21/66
CPC分类号： H01L29/7787 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02658 , H01L22/14 , H01L29/155 , H01L29/2003 , H01L29/66462
摘要： To provide an epitaxial substrate for electronic devices, in which current flows in a lateral direction, which enables accurate measurement of the sheet resistance of HEMTs without contact, and to provide a method of efficiently producing the epitaxial substrate for electronic devices, the method characteristically includes the steps of forming a barrier layer against impurity diffusion on one surface of a high-resistance Si-single crystal substrate, forming a buffer as an insulating layer on the other surface of the high-resistance Si-single crystal substrate, producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate, and measuring resistance of the main laminate of the epitaxial substrate without contact.
摘要翻译：为了提供一种电子器件的外延衬底，其中电流沿横向流动，这使得能够精确地测量HEMT的薄层电阻而不接触，并且提供了一种有效地制造用于电子器件的外延衬底的方法，该方法的特征在于包括在高电阻Si单晶衬底的一个表面上形成抵抗杂质扩散的阻挡层的步骤，在高电阻Si-单晶衬底的另一个表面上形成作为绝缘层的缓冲层，产生外延衬底通过在缓冲器上外延生长多个III族氮化物层以形成主层压板，并测量外延衬底的主层压体的电阻而不接触。

55. 发明授权

US08039130B2 Method of forming group-III nitride crystal, layered structure and epitaxial substrate 有权
标题翻译：形成III族氮化物晶体，层状结构和外延衬底的方法
公开(公告)号：US08039130B2
公开(公告)日：2011-10-18
申请号：US12234022
申请日：2008-09-19
申请人： Tomohiko Shibata
发明人： Tomohiko Shibata
IPC分类号： B32B9/00 , B32B19/00
CPC分类号： C30B29/403 , C30B33/02 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02658
摘要： Heat treatment is conducted at a predetermined temperature of not less than 1250° C. on an underlying substrate obtained by epitaxially forming a first group-III nitride crystal on a predetermined base as an underlying layer. Three-dimensional fine irregularities resulting from crystalline islands are created on the surface of the underlying layer. A second group-III nitride crystal is epitaxially formed on the underlying substrate as a crystal layer. There are a great many fine voids interposed at the interface between the crystal layer and underlying substrate. The presence of such voids suppresses propagation of dislocations from the underlying substrate, which reduces the dislocation density in the crystal layer. As a result, the crystal layer of good crystal quality can be obtained.
摘要翻译：在预定的基底上外延形成第一III族氮化物晶体而获得的底层基板上，在不小于1250℃的预定温度下进行热处理。在下层的表面上产生由结晶岛产生的三维细微不规则。第二组III族氮化物晶体作为晶体层外延形成在下面的衬底上。在晶体层和下层衬底之间的界面处插入许多细小的空隙。这种空隙的存在抑制位错从底层衬底的扩散，这降低了晶体层中的位错密度。结果，可以获得具有良好晶体质量的晶体层。

56. 发明申请

US20110240962A1 EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME 有权
标题翻译：用于电子器件的外延衬底及其制造方法
公开(公告)号：US20110240962A1
公开(公告)日：2011-10-06
申请号：US13139428
申请日：2009-12-14
申请人： Tetsuya Ikuta , Jo Shimizu , Tomohiko Shibata
发明人： Tetsuya Ikuta , Jo Shimizu , Tomohiko Shibata
IPC分类号： H01L29/06 , H01L21/20
CPC分类号： H01L21/0262 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/1075 , H01L29/155 , H01L29/66462 , H01L29/7787
摘要： An epitaxial substrate for an electronic device having a Si single crystal substrate, a buffer as an insulating layer formed on the Si single crystal substrate, and a main laminated body formed by plural group III nitride layers epitaxially grown on the buffer, wherein a lateral direction of the epitaxial substrate is defined as an electric current conducting direction. The buffer including at least an initially grown layer in contact with the Si single crystal substrate and a superlattice laminate constituted of a superlattice multilayer structure on the initially grown layer.
摘要翻译：一种用于具有Si单晶衬底的电子器件的外延衬底，在Si单晶衬底上形成的绝缘层的缓冲层，以及由在缓冲器上外延生长的多个III族氮化物层形成的主叠层体，其中，的外延衬底被定义为电流传导方向。所述缓冲器至少包括与所述Si单晶衬底接触的初始生长层和在初始生长层上由超晶格多层结构构成的超晶格层叠体。

57. 发明授权

US07815235B2 Tonneau cover unit 有权
标题翻译： Tonneau盖单位
公开(公告)号：US07815235B2
公开(公告)日：2010-10-19
申请号：US12010625
申请日：2008-01-28
申请人： Hironori Hayashi , Tomohiko Shibata , Masahiro Ideue
发明人： Hironori Hayashi , Tomohiko Shibata , Masahiro Ideue
IPC分类号： B60R5/04
CPC分类号： B60R5/047 , Y10S160/02
摘要： A tonneau cover unit includes: a tonneau cover that covers a luggage floor which is formed on the rear side within a vehicle; a board that is fitted to an end portion of the tonneau cover, and that is provided with an engaging portion; and a rail along which the engaging portion slides in the longitudinal direction of the vehicle. The rail has a first engaged portion that locks the board at the prescribed position with the board kept substantially parallel to the luggage floor when the engaging portion is engaged in the first engaged portion; and a second engaged portion that locks the board at a prescribed position with the board kept substantially upright at a predetermined angle with respect to the luggage floor when the engaging portion is engaged in the second engaged portion.
摘要翻译：一种吨位盖单元包括：覆盖形成在车辆的后侧的行李箱地板的吨位盖; 安装在所述吨位盖的端部的板，并且设置有接合部; 以及轨道，所述接合部沿所述轨道沿车辆的纵向方向滑动。所述轨道具有第一接合部分，当所述接合部分接合在所述第一接合部分中时，所述板将所述板锁定在所述规定位置，所述板保持基本上平行于行李箱地板; 以及第二被卡合部，当接合部接合在第二被卡合部中时，将板保持在规定位置，同时板相对于行李箱基本上保持预定角度。

58. 发明申请

US20080242060A1 METHOD FOR FORMING AlGaN CRYSTAL LAYER 有权
标题翻译：形成AlGaN晶体层的方法
公开(公告)号：US20080242060A1
公开(公告)日：2008-10-02
申请号：US12051168
申请日：2008-03-19
申请人： Kei Kosaka , Shigeaki Sumiya , Tomohiko Shibata
发明人： Kei Kosaka , Shigeaki Sumiya , Tomohiko Shibata
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254
摘要： A method for preparing an AlGaN crystal layer with good surface flatness is provided. A surface layer of AlN is epitaxially formed on a c-plane sapphire single crystal base material by MOCVD method, and the resulting laminated body is then heated at a temperature of 1300° C. or higher so that a template substrate applying in-plane compressive stress and having a surface layer flat at a substantially atomic level is obtained. An AlGaN layer is formed on the template substrate at a deposition temperature higher than 1000° C. by an MOCVD method that includes depositing alternating layers of a first unit layer including a Group III nitride represented by the composition formula AlxGa1-xN (0≦x≦1) and a second unit layer including a Group III nitride represented by the composition formula AlyGa1-yN (0≦y≦1 and y≠x) such that the AlGaN layer has a superlattice structure.
摘要翻译：提供了一种制备具有良好表面平坦度的AlGaN晶体层的方法。通过MOCVD法在C面蓝宝石单晶基材上外延形成AlN的表面层，然后在1300℃以上的温度下加热所得到的层叠体，使得在基板上施加面内压缩获得了基本原子水平的表面层平坦的应力。通过MOCVD方法在模板基板上以高于1000℃的沉积温度在模板基板上形成AlGaN层，该方法包括：沉积包含由组成式Al x x表示的III族氮化物的第一单元层的交替层，（0≤x≤1）的第一单元层和由组成式Al Y y表示的III族氮化物的第二单位层 1-y N（0 <= y <= 1和y

59. 发明授权

US06835965B2 Semiconductor light-emitting devices 有权
标题翻译：半导体发光器件
公开(公告)号：US06835965B2
公开(公告)日：2004-12-28
申请号：US10351390
申请日：2003-01-27
申请人： Mitsuhiro Tanaka , Tomohiko Shibata , Osamu Oda , Takashi Egawa
发明人： Mitsuhiro Tanaka , Tomohiko Shibata , Osamu Oda , Takashi Egawa
IPC分类号： H01L3300
CPC分类号： H01L33/32 , B82Y20/00 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/025 , H01L33/12 , H01S5/22 , H01S5/34333 , H01S2301/173
摘要： An object of the present invention is to provide a semiconductor light-emitting device that reduces dislocation density and has a high luminous efficiency. A semiconductor light-emitting device 20 has an underlayer 13 made of nitride semiconductor containing Al and a dislocation density of 1011/cm2 or less. The device further has an n-type conductive layer 14 and p-type conductive layer 17 each composed of nitride semiconductor having an Al content smaller than that of the nitride semiconductor constituting the underlayer and having a dislocation density of 1×1010/cm2 or less. The device still further has a light emitting layer 15 composed of nitride semiconductor having an Al content smaller than that of the nitride semiconductor constituting the underlayer and having a dislocation density of 1×1010/m2 or less, as well.
摘要翻译：本发明的目的在于提供减少位错密度，发光效率高的半导体发光元件。半导体发光器件20具有由含有Al的氮化物半导体和位移密度为10 11 / cm 2以下的底层13。该器件还具有n型导电层14和p型导电层17，它们各自由氮化物半导体构成，Al氮化物半导体的Al含量低于构成底层的氮化物半导体，其位错密度为1×10 10 / 2>以下。该装置还具有由氮化物半导体构成的发光层15，该氮化物半导体的Al含量比构成底层的氮化物半导体的Al含量小，并且具有1×10 10 / m 2以下的位错密度。

60. 发明授权

US06713954B2 Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：US06713954B2
公开(公告)日：2004-03-30
申请号：US10097275
申请日：2002-03-15
申请人： Akihiro Wakahara , Tomohiko Shibata , Osamu Oda , Mitsuhiro Tanaka
发明人： Akihiro Wakahara , Tomohiko Shibata , Osamu Oda , Mitsuhiro Tanaka
IPC分类号： H01J162
CPC分类号： H01J63/06 , B82Y10/00 , H01J2201/30469 , H01L33/325 , H01L33/502
摘要： A light-emitting element includes a transparent substrate, a III-V nitride semiconductor layer including rare earth metal elements which is formed on said transparent substrate, and an irradiation source of electron beam which is disposed within 5 mm from the surface of said III-V nitride semiconductor layer so as to be opposite to said III-V nitride semiconductor layer. Then, the rare earth metal elements in the III-V nitride semiconductor layer are excited by electron beams from the irradiation source and a given fluorescence inherent to the rare earth metal elements are emitted.
摘要翻译：发光元件包括透明基板，包括形成在所述透明基板上的稀土金属元素的III-V族氮化物半导体层和设置在距离所述III型半导体层的表面5mm以内的电子束照射源， V族氮化物半导体层，以与所述III-V族氮化物半导体层相对。然后，通过来自照射源的电子束激发III-V族氮化物半导体层中的稀土金属元素，并且发射稀土金属元素固有的给定荧光。

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