专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08710489B2 Epitaxial substrate for electronic device, in which current flows in lateral direction and method of producing the same 有权
标题翻译：电流装置的外延基板，其中电流沿横向流动，其制造方法
公开(公告)号：US08710489B2
公开(公告)日：2014-04-29
申请号：US13384006
申请日：2010-07-13
申请人： Tetsuya Ikuta , Daisuke Hino , Ryo Sakamoto , Tomohiko Shibata
发明人： Tetsuya Ikuta , Daisuke Hino , Ryo Sakamoto , Tomohiko Shibata
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01L29/7787 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02658 , H01L22/14 , H01L29/155 , H01L29/2003 , H01L29/66462
摘要： To provide an epitaxial substrate for electronic devices, in which current flows in a lateral direction, which enables accurate measurement of the sheet resistance of HEMTs without contact, and to provide a method of efficiently producing the epitaxial substrate for electronic devices, the method characteristically includes the steps of forming a barrier layer against impurity diffusion on one surface of a high-resistance Si-single crystal substrate, forming a buffer as an insulating layer on the other surface of the high-resistance Si-single crystal substrate, producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate, and measuring resistance of the main laminate of the epitaxial substrate without contact.
摘要翻译：为了提供一种电子器件的外延衬底，其中电流沿横向流动，这使得能够精确地测量HEMT的薄层电阻而不接触，并且提供了一种有效地制造用于电子器件的外延衬底的方法，该方法的特征在于包括在高电阻Si单晶衬底的一个表面上形成抵抗杂质扩散的阻挡层的步骤，在高电阻Si-单晶衬底的另一个表面上形成作为绝缘层的缓冲层，产生外延衬底通过在缓冲器上外延生长多个III族氮化物层以形成主层压板，并测量外延衬底的主层压体的电阻而不接触。

2. 发明申请

US20120153440A1 EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME 有权
标题翻译：用于电子器件的外延衬底及其制造方法
公开(公告)号：US20120153440A1
公开(公告)日：2012-06-21
申请号：US13388804
申请日：2010-08-02
申请人： Tetsuya Ikuta , Daisuke Hino , Ryo Sakamoto , Tomohiko Shibata
发明人： Tetsuya Ikuta , Daisuke Hino , Ryo Sakamoto , Tomohiko Shibata
IPC分类号： H01L29/38 , C30B25/18
CPC分类号： H01L29/7786 , H01L21/02381 , H01L21/02488 , H01L21/0254 , H01L21/02658 , H01L21/187 , H01L29/66462 , H01L29/66863 , H01L29/812
摘要： An epitaxial substrate for electronic devices, in which current flows in a lateral direction and of which warpage configuration is properly controlled, and a method of producing the same. The epitaxial substrate for electronic devices is produced by forming a bonded substrate by bonding a low-resistance Si single crystal substrate and a high-resistance Si single crystal substrate together; forming a buffer as an insulating layer on a surface of the bonded substrate on the high-resistance Si single crystal substrate side; and producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate. The resistivity of the low-resistance Si single crystal substrate is 100 Ω·cm or less, and the resistivity of the high-resistance Si single crystal substrate is 1000 Ω·cm or more.
摘要翻译：电流装置的外延基板及其制造方法，其中电流沿横向流动并且翘曲构造被适当地控制。通过将低电阻Si单晶衬底和高电阻Si单晶衬底结合在一起来形成键合衬底来制造电子器件外延衬底; 在高电阻Si单晶衬底侧的键合衬底的表面上形成缓冲层作为绝缘层; 以及通过在缓冲器上外延生长多个III族氮化物层以形成主层压板来制造外延衬底。低电阻Si单晶衬底的电阻率为100Ω·cm·cm以下，高电阻Si单晶衬底的电阻率为1000Ω·cm·cm以上。

3. 发明授权

US08946863B2 Epitaxial substrate for electronic device comprising a high resistance single crystal substrate on a low resistance single crystal substrate, and method of manufacturing 有权
标题翻译：包含低电阻单晶衬底上的高电阻单晶衬底的电子器件外延衬底及其制造方法
公开(公告)号：US08946863B2
公开(公告)日：2015-02-03
申请号：US13388804
申请日：2010-08-02
申请人： Tetsuya Ikuta , Daisuke Hino , Ryo Sakamoto , Tomohiko Shibata
发明人： Tetsuya Ikuta , Daisuke Hino , Ryo Sakamoto , Tomohiko Shibata
IPC分类号： H01L29/66 , H01L29/778 , H01L21/18 , H01L29/812 , H01L21/02
CPC分类号： H01L29/7786 , H01L21/02381 , H01L21/02488 , H01L21/0254 , H01L21/02658 , H01L21/187 , H01L29/66462 , H01L29/66863 , H01L29/812
摘要： An epitaxial substrate for electronic devices, in which current flows in a lateral direction and of which warpage configuration is properly controlled, and a method of producing the same. The epitaxial substrate for electronic devices is produced by forming a bonded substrate by bonding a low-resistance Si single crystal substrate and a high-resistance Si single crystal substrate together; forming a buffer as an insulating layer on a surface of the bonded substrate on the high-resistance Si single crystal substrate side; and producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate. The resistivity of the low-resistance Si single crystal substrate is 100 Ω·cm or less, and the resistivity of the high-resistance Si single crystal substrate is 1000 Ω·cm or more.
摘要翻译：电流装置的外延基板及其制造方法，其中电流沿横向流动并且翘曲构造被适当地控制。通过将低电阻Si单晶衬底和高电阻Si单晶衬底结合在一起来形成键合衬底来制造电子器件外延衬底; 在高电阻Si单晶衬底侧的键合衬底的表面上形成缓冲层作为绝缘层; 以及通过在缓冲器上外延生长多个III族氮化物层以形成主层压板来制造外延衬底。低电阻Si单晶衬底的电阻率为100Ω·cm·cm以下，高电阻Si单晶衬底的电阻率为1000Ω·cm·cm以上。

4. 发明申请

US20120168719A1 EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE, IN WHICH CURRENT FLOWS IN LATERAL DIRECTION AND METHOD OF PRODUCING THE SAME 有权
标题翻译：用于电子设备的外来衬底，其中沿着横向的电流流动及其生产方法
公开(公告)号：US20120168719A1
公开(公告)日：2012-07-05
申请号：US13384006
申请日：2010-07-13
申请人： Tetsuya Ikuta , Daisuke Hino , Ryo Sakamoto , Tomohiko Shibata
发明人： Tetsuya Ikuta , Daisuke Hino , Ryo Sakamoto , Tomohiko Shibata
IPC分类号： H01L29/06 , H01L21/66
CPC分类号： H01L29/7787 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02658 , H01L22/14 , H01L29/155 , H01L29/2003 , H01L29/66462
摘要： To provide an epitaxial substrate for electronic devices, in which current flows in a lateral direction, which enables accurate measurement of the sheet resistance of HEMTs without contact, and to provide a method of efficiently producing the epitaxial substrate for electronic devices, the method characteristically includes the steps of forming a barrier layer against impurity diffusion on one surface of a high-resistance Si-single crystal substrate, forming a buffer as an insulating layer on the other surface of the high-resistance Si-single crystal substrate, producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate, and measuring resistance of the main laminate of the epitaxial substrate without contact.
摘要翻译：为了提供一种电子器件的外延衬底，其中电流沿横向流动，这使得能够精确地测量HEMT的薄层电阻而不接触，并且提供了一种有效地制造用于电子器件的外延衬底的方法，该方法的特征在于包括在高电阻Si单晶衬底的一个表面上形成抵抗杂质扩散的阻挡层的步骤，在高电阻Si-单晶衬底的另一个表面上形成作为绝缘层的缓冲层，产生外延衬底通过在缓冲器上外延生长多个III族氮化物层以形成主层压板，并测量外延衬底的主层压体的电阻而不接触。

5. 发明授权

US09006865B2 Epitaxial growth substrate, semiconductor device, and epitaxial growth method 有权
标题翻译：外延生长衬底，半导体器件和外延生长法
公开(公告)号：US09006865B2
公开(公告)日：2015-04-14
申请号：US13703943
申请日：2011-06-24
申请人： Tetsuya Ikuta , Daisuke Hino , Tomohiko Shibata
发明人： Tetsuya Ikuta , Daisuke Hino , Tomohiko Shibata
IPC分类号： H01L29/20 , H01L29/12 , C30B25/18 , C30B29/40 , H01L21/02 , H01L29/10 , H01L29/778
CPC分类号： H01L29/12 , C30B25/18 , C30B29/403 , H01L21/02381 , H01L21/0243 , H01L21/02463 , H01L21/02546 , H01L21/02658 , H01L29/1075 , H01L29/2003 , H01L29/7786
摘要： In heteroepitaxially growing a group-III nitride semiconductor on a Si single crystal substrate, the occurrence of cracks initiating in the wafer edge portion can be suppressed. Region A is an outermost peripheral portion outside the principal surface, being a bevel portion tapered. Regions B and C are on the same plane (the principal surface), region B (mirror-surface portion) being the center portion of the principal surface, and region C a region in the principal surface edge portion surrounding region B. The principal surface has a plane orientation, and in region B, is mirror-surface-finished. Region B occupies most of the principal surface of this Si single crystal substrate, and a semiconductor device is manufactured therein. Region C (surface-roughened portion) has a plane orientation as with region B, however, region B is mirror-surface-finished, whereas region C is surface-roughened.
摘要翻译：在Si单晶衬底上异质外延生长III族氮化物半导体时，可以抑制晶片边缘部分发生裂纹的发生。区域A是主表面之外的最外围部分，是锥形部分的斜面部分。区域B和C位于主面的同一平面（主面），作为主面的中心部的区域B（镜面部），区域C是主表面边缘部周围区域B的区域。主面具有平面取向，并且在区域B中是镜面加工的。区域B占据该Si单晶衬底的主要表面的大部分，并且在其中制造半导体器件。区域C（表面粗糙化部分）具有与区域B一样的平面取向，但是区域B是镜面精加工的，而区域C被表面粗糙化。

6. 发明申请

US20130087807A1 EPITAXIAL GROWTH SUBSTRATE, SEMICONDUCTOR DEVICE, AND EPITAXIAL GROWTH METHOD 有权
标题翻译：外延生长基质，半导体器件和外延生长方法
公开(公告)号：US20130087807A1
公开(公告)日：2013-04-11
申请号：US13703943
申请日：2011-06-24
申请人： Tetsuya Ikuta , Daisuke Hino , Tomohiko Shibata
发明人： Tetsuya Ikuta , Daisuke Hino , Tomohiko Shibata
IPC分类号： H01L29/12
CPC分类号： H01L29/12 , C30B25/18 , C30B29/403 , H01L21/02381 , H01L21/0243 , H01L21/02463 , H01L21/02546 , H01L21/02658 , H01L29/1075 , H01L29/2003 , H01L29/7786
摘要： In heteroepitaxially growing a group-III nitride semiconductor on a Si single crystal substrate, the occurrence of cracks initiating in the wafer edge portion can be suppressed. Region A is an outermost peripheral portion outside the principal surface, being a bevel portion tapered. Regions B and C are on the same plane (the principal surface), region B (mirror-surface portion) being the center portion of the principal surface, and region C a region in the principal surface edge portion surrounding region B. The principal surface has a plane orientation, and in region B, is mirror-surface-finished. Region B occupies most of the principal surface of this Si single crystal substrate, and a semiconductor device is manufactured therein. Region C (surface-roughened portion) has a plane orientation as with region B, however, region B is mirror-surface-finished, whereas region C is surface-roughened.
摘要翻译：在Si单晶衬底上异质外延生长III族氮化物半导体时，可以抑制晶片边缘部分发生裂纹的发生。区域A是主表面之外的最外围部分，是锥形部分的斜面部分。区域B和C位于主面的同一平面（主面），作为主面的中心部的区域B（镜面部），区域C是主表面边缘部周围区域B的区域。主面具有平面取向，并且在区域B中是镜面加工的。区域B占据该Si单晶衬底的主要表面的大部分，并且其中制造半导体器件。区域C（表面粗糙化部分）具有与区域B一样的平面取向，但是区域B是镜面精加工的，而区域C被表面粗糙化。

7. 发明申请

US20080214861A1 Method for Producing 2-Hydroxyester Compounds 有权
标题翻译：生产2-羟基酯化合物的方法
公开(公告)号：US20080214861A1
公开(公告)日：2008-09-04
申请号：US11997856
申请日：2006-08-08
申请人： Ichiro Kozono , Naoki Fujiwara , Daisuke Hino
发明人： Ichiro Kozono , Naoki Fujiwara , Daisuke Hino
IPC分类号： C07C67/22
CPC分类号： C07C67/22 , C07C67/58 , C07C69/734 , C07C69/675
摘要： A simple and easy-to-use method for producing a 2-hydroxyester compound using a cyanohydrin compound, as a raw material, is provided. A method for producing a 2-hydroxyester compound represented by the general formula (1) (provided that ethyl 2-hydroxy-4-phenylbutyrate is excluded), wherein an acid is introduced into a mixture of a cyanohydrin compound represented by the general formula (2), an alcohol, an organic solvent and water:(Chemical Formula 1) R1—CH(OH)—COOR2 (1) R1—CH(OH)(CN) (2) wherein, R1 is a hydrogen atom, a substituted or unsubstituted aliphatic hydrocarbon group having 1 to 12 carbon atoms, which may contain an oxygen atom, a sulfur atom or a nitrogen atom, a substituted or unsubstituted alicyclic hydrocarbon group having 3 to 12 carbon atoms, which may contain an oxygen atom, a sulfur atom or a nitrogen atom, and a substituted or unsubstituted aryl group or aralkyl group having 3 to 14 carbon atoms, which may contain an oxygen atom, a sulfur atom or a nitrogen atom; and R2 is an alkyl group having 1 to 12 carbon atoms, which may contain an oxygen atom, a sulfur atom or a nitrogen atom.
摘要翻译：提供了使用氰醇化合物作为原料制备2-羟基酯化合物的简单且易于使用的方法。制备由通式（1）表示的2-羟基酯化合物的方法（不包括2-羟基-4-苯基丁酸乙酯），其中将酸引入由通式（2）表示的羟腈化合物的混合物中 2），醇，有机溶剂和水：（化学式1）<？in-line-formula description =“In-line formula”end =“lead”？> R 1 -CH （OH）-COOR 2（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In- 线型公式“end =”lead“？> R <1> -CH（OH）（CN）（2）<？in-line-formula description =”In-line Formulas“end =”tail“ 其中，R 1是氢原子，取代或未取代的碳原子数1〜12的脂肪族烃基，可以含有氧原子，硫原子或氮原子，取代或未取代的可以含有氧原子，硫原子或氮原子的碳原子数3〜12的未取代的脂环式烃基 d可以含有氧原子，硫原子或氮原子的取代或未取代的具有3〜14个碳原子的芳基或芳烷基; R 2是具有1〜12个碳原子的烷基，可以含有氧原子，硫原子或氮原子。

8. 发明授权

US08741441B2 Insulated wire 有权
标题翻译：绝缘电线
公开(公告)号：US08741441B2
公开(公告)日：2014-06-03
申请号：US12829528
申请日：2010-07-02
申请人： Yuki Honda , Tomiya Abe , Hideyuki Kikuchi , Daisuke Hino
发明人： Yuki Honda , Tomiya Abe , Hideyuki Kikuchi , Daisuke Hino
IPC分类号： B32B15/08 , C08L79/08 , H01B17/60
CPC分类号： C09D179/08 , H01B3/305 , Y10T428/31681 , Y10T428/31721
摘要： An insulated wire includes a conductor, and an insulating covering layer formed on a periphery of the conductor and including two or more insulating coatings. The insulating coatings include a polyamide-imide resin insulating material represented by chemical formula 1: where R indicates a divalent aromatic diamine including three or more aromatic rings. The insulating coatings are formed by applying and baking the polyamide-imide resin insulating material, and the polyamide-imide resin insulating material is obtained by reacting an imide group containing dicarboxylic acid with a diisocyanate, the imide group containing dicarboxylic acid being obtained by dehydration reaction of a diamine comprising a divalent aromatic diamine including three or more aromatic rings with an acid using an azeotropic solvent.
摘要翻译：绝缘线包括导体和形成在导体的周边上并包括两个或更多个绝缘涂层的绝缘覆盖层。绝缘涂层包括由化学式1表示的聚酰胺酰亚胺树脂绝缘材料：其中R表示包含三个或更多个芳环的二价芳族二胺。通过涂布和烘烤聚酰胺酰亚胺树脂绝缘材料形成绝缘涂层，并且通过使含有二羧酸的酰亚胺基与二异氰酸酯反应获得聚酰胺 - 酰亚胺树脂绝缘材料，通过脱水反应得到含有二羧酸的酰亚胺基的二胺，其包含使用共沸溶剂的含有三个或更多个芳族环的二价芳族二胺与酸。

9. 发明授权

US09145505B2 Polyamide-imide resin based insulating varnish and insulated wire covered with same 有权
标题翻译：聚酰胺酰亚胺树脂基绝缘漆和绝缘线覆盖
公开(公告)号：US09145505B2
公开(公告)日：2015-09-29
申请号：US12870400
申请日：2010-08-27
申请人： Hideyuki Kikuchi , Daisuke Hino , Yuji Takano , Yasuhiro Funayama
发明人： Hideyuki Kikuchi , Daisuke Hino , Yuji Takano , Yasuhiro Funayama
IPC分类号： H01B7/02 , C09D179/08 , C08G73/10 , C08G73/14 , H01B3/30
CPC分类号： C09D179/08 , C08G73/1035 , C08G73/14 , C08L2203/20 , H01B3/306
摘要： There is provided an insulated wire including: a conductor wire; and a polyamide-imide insulation coating formed around the conductor wire, the polyamide-imide insulation coating being made from a polyamide-imide resin based insulating varnish, the varnish being synthesized by reaction of an isocyanate constituent and an acid constituent in a solvent, the isocyanate constituent including 5 to 50 mol % of 2,4′-diphenylmethane-diisocyanate having a flexible molecular structure.
摘要翻译：提供了一种绝缘电线，包括：导线; 聚酰胺 - 酰亚胺绝缘涂层由聚酰胺 - 酰亚胺树脂基绝缘漆制成，该清漆由异氰酸酯组分和酸成分在溶剂中的反应合成，包括5至50mol％具有柔性分子结构的2,4'-二苯基甲烷 - 二异氰酸酯的异氰酸酯组分。

10. 发明授权

US08679628B2 Insulated wire 有权
标题翻译：绝缘电线
公开(公告)号：US08679628B2
公开(公告)日：2014-03-25
申请号：US12816699
申请日：2010-06-16
申请人： Yuki Honda , Tomiya Abe , Hideyuki Kikuchi , Daisuke Hino
发明人： Yuki Honda , Tomiya Abe , Hideyuki Kikuchi , Daisuke Hino
IPC分类号： B32B15/00 , H01B7/00
CPC分类号： H01B3/427 , H01B3/305 , H01B3/306 , Y10T428/2929 , Y10T428/2933 , Y10T428/2935 , Y10T428/294 , Y10T428/31681 , Y10T428/31721
摘要： There is provided an insulated wire equipped with an insulation film made of polymer alloy, the polymer alloy comprising an amorphous thermosetting resin and an amorphous thermoplastic resin, in which: the insulation film has a sea-island structure; the amorphous thermosetting resin is a sea component of the sea-island structure; and the amorphous thermoplastic resin is an island component of the sea-island structure.
摘要翻译：提供了一种配备有由聚合物合金制成的绝缘膜的绝缘电线，所述聚合物合金包括非晶态热固性树脂和非晶态热塑性树脂，其中：绝缘膜具有海岛结构; 无定型热固性树脂是海岛结构的海成分; 无定形热塑性树脂是海岛结构体的岛成分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式