专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US06274286B1 Resist compositions 失效
标题翻译：抗蚀剂组合物
公开(公告)号：US06274286B1
公开(公告)日：2001-08-14
申请号：US09105003
申请日：1998-06-26
申请人： Jun Hatakeyama , Tsunehiro Nishi , Takeshi Nagata , Shigehiro Nagura
发明人： Jun Hatakeyama , Tsunehiro Nishi , Takeshi Nagata , Shigehiro Nagura
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , Y10S430/106
摘要： A chemically amplified positive resist composition comprising at least one basic compound of the following general formula (1) or (2): wherein R1, R2, R3, R7, and R8 are independently normal, branched or cyclic alkylene groups having 1 to 20 carbon atoms, R4, R5, R6, R9, and R10 are independently hydrogen, alkyl groups having 1 to 20 carbon atoms or amino groups, R4 and R5, R5 and R6, R4 and R6, or R8, R5 and R5, and R9 and R10, taken together, may form a ring, letters k, m and n are integers of 0 to 20, with the proviso that hydrogen is excluded from R4, R5, R6, R9 and R10 when k, m or n is equal to 0. The resist compositions of the present invention are effective for preventing resist films from thinning and for increasing the focus margin of an isolated pattern.
摘要翻译：一种化学放大正型抗蚀剂组合物，其包含至少一种下列通式（1）或（2）的碱性化合物：其中R 1，R 2，R 3，R 7和R 8独立地为具有1至20个碳的正，支链或环状亚烷基原子，R 4，R 5，R 6，R 9和R 10独立地是氢，具有1至20个碳原子的烷基或氨基，R 4和R 5，R 5和R 6，R 4和R 6，或R 8，R 5和R 5， R 10一起可以形成环，字母k，m和n是0至20的整数，条件是当k，m或n等于0时，从R4，R5，R6，R9和R10排除氢。本发明的抗蚀剂组合物对于防止抗蚀剂膜变薄和增加隔离图案的聚焦边缘是有效的。

52. 发明授权

US06156477A Polymers and chemically amplified positive resist compositions 失效
标题翻译：聚合物和化学增幅阳性抗蚀剂组合物
公开(公告)号：US06156477A
公开(公告)日：2000-12-05
申请号：US13270
申请日：1998-01-26
申请人： Kiyoshi Motomi , Osamu Watanabe , Satoshi Watanabe , Shigehiro Nagura , Toshinobu Ishihara
发明人： Kiyoshi Motomi , Osamu Watanabe , Satoshi Watanabe , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： C08F8/00 , G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , C08F8/14 , G03F7/0045 , C08F2800/20 , C08F2810/20 , Y10S430/106 , Y10S430/111
摘要： A polymer comprising recurring units of formula (1) is provided wherein some hydrogen atoms of phenolic hydroxyl groups and/or carboxyl groups are replaced by acid labile groups. The polymer is crosslinked with a crosslinking group having a C--O--C linkage resulting from reaction of some of the remaining phenolic hydroxyl groups and/or carboxyl groups with an alkenyl ether compound or halogenated alkyl ether compound. The amount of the acid labile group and the crosslinking group combined is on the average from more than 0 mol % to 80 mol % of the entirety of the phenolic hydroxyl group and carboxyl group. The polymer has Mw of 1,000-500,000. R.sup.1 is H or methyl, R.sup.2 is C.sub.1 -C.sub.8 alkyl, R.sup.3 is H, R.sup.4 is --COOR.sup.5, C.sub.1 -C.sub.5 alkyl or phenyl, or R.sup.3 and R.sup.4, taken together, may form --COOCO--, R.sup.5 is H or C.sub.1 -C.sub.8 alkyl, x and y are integers satisfying x+y.ltoreq.5, p and q are positive numbers satisfying p+q=1 and 0
摘要翻译：提供了包含式（1）的重复单元的聚合物，其中酚羟基和/或羧基的一些氢原子被酸不稳定基团取代。聚合物与由一些残留的酚羟基和/或羧基与烯基醚化合物或卤代烷基醚化合物反应得到的具有C-O-C键的交联基团交联。酸不稳定基团和交联基团的用量平均为全部酚羟基和羧基的0摩尔％至80摩尔％以上。聚合物的Mw为1,000-500,000。 R1是H或甲基，R2是C1-C8烷基，R3是H，R4是-COOR5，C1-C5烷基或苯基，或R3和R4一起可以形成-COOCO-，R5是H或C1-C8 烷基，x和y是满足x + y <5的整数，p和q是满足p + q = 1和0

53. 发明授权

US6114462A Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group 有权
标题翻译：化学扩增正型抗蚀剂组合物，图案形成方法，以及制备具有交联基团的聚合物的方法
公开(公告)号：US6114462A
公开(公告)日：2000-09-05
申请号：US302304
申请日：1999-04-30
申请人： Satoshi Watanabe , Osamu Watanabe , Tomoyoshi Furihata , Yoshihumi Takeda , Shigehiro Nagura , Toshinobu Ishihara , Tsuguo Yamaoka
发明人： Satoshi Watanabe , Osamu Watanabe , Tomoyoshi Furihata , Yoshihumi Takeda , Shigehiro Nagura , Toshinobu Ishihara , Tsuguo Yamaoka
IPC分类号： C08F8/00 , G03F7/004 , G03F7/039 , C08F261/06
CPC分类号： G03F7/039 , C08F8/00 , G03F7/0045 , C08F2810/20 , C08F2810/30 , Y10S430/106
摘要： A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin in the form of a polymer having at least one acid labile group and crosslinked within a molecule and/or between molecules with a crosslinking group having a C--O--C linkage, the polymer having a weight average molecular weight of 1,000-500,000, (C) a photoacid generator, (D) a basic compound, and (E) an aromatic compound having a group .tbd.C--COOH in a molecule. The composition has a high alkali dissolution contrast, high sensitivity and high resolution.
摘要翻译：化学放大正性抗蚀剂组合物包含（A）有机溶剂，（B）具有至少一个酸不稳定基团的聚合物形式的基础树脂，并且在分子内和/或具有交联基团的分子之间具有COC 连接，重均分子量为1,000〜500,000的聚合物，（C）光酸产生剂，（D）碱性化合物和（E）分子中具有第3BOND C-COOH基团的芳族化合物。该组合物具有高碱溶性对比度，高灵敏度和高分辨率。

54. 发明授权

US6048661A Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation 失效
标题翻译：聚合化合物，化学放大正型抗蚀剂材料和图案形成工艺
公开(公告)号：US6048661A
公开(公告)日：2000-04-11
申请号：US33147
申请日：1998-03-02
申请人： Tsunehiro Nishi , Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
发明人： Tsunehiro Nishi , Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/11 , Y10S430/111
摘要： Provided are polymeric compounds which, when used as base resins in resist materials, can yield chemical resist materials having high sensitivity, high resolution, a high exposure latitude, and good process adaptability, exhibiting excellent resistance to plasma etching, and giving resist patterns having high thermal resistance, as well as chemically amplified positive type resist materials using such polymeric compounds as base resins. These chemically amplified positive type resist materials use a base resin comprising a polymeric compound having a weight-average molecular weight of 1,000 to 500,000 and having one or more hydroxyl and/or carboxyl groups in the molecule, part or all of the hydrogen atoms of the hydroxyl and/or carboxyl groups being replaced by groups of the following general formula ##STR1## and additionally contain an acid generator, a dissolution inhibitor, a basic compound, and an aromatic compound having a group of the formula .tbd.C--COOH.
摘要翻译：提供了当作为抗蚀剂材料中的基础树脂使用时，可以产生具有高灵敏度，高分辨率，高曝光宽容度和良好的工艺适应性的化学抗蚀剂材料，表现出优异的等离子体蚀刻性，并且具有高抗蚀剂图案的抗蚀剂图案耐热性以及使用这种聚合物作为基础树脂的化学放大正型抗蚀剂材料。这些化学放大正型抗蚀剂材料使用包含重均分子量为1,000至500,000并且在分子中具有一个或多个羟基和/或羧基的聚合化合物的基础树脂，部分或全部氢原子羟基和/或羧基被下列通式的基团取代，另外含有酸产生剂，溶解抑制剂，碱性化合物和具有式3BOND C-COOH基团的芳族化合物。

55. 发明授权

US6027854A Polymers chemically amplified positive resist compositions, and patterning method 失效
标题翻译：聚合物化学放大正性抗蚀剂组合物和图案化方法
公开(公告)号：US6027854A
公开(公告)日：2000-02-22
申请号：US31560
申请日：1998-02-27
申请人： Tsunehiro Nishi , Osamu Watanabe , Satoshi Watanabe , Shigehiro Nagura , Toshinobu Ishihara
发明人： Tsunehiro Nishi , Osamu Watanabe , Satoshi Watanabe , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： A polymer comprising recurring units of formula (1) is provided wherein some hydrogen atoms of phenolic hydroxyl groups and/or alcoholic hydroxyl groups and/or carboxyl groups are replaced by acid labile groups. The polymer is crosslinked with a crosslinking group having a C--O--C linkage resulting from reaction of some of the remaining alcoholic hydroxyl groups and/or carboxyl groups with an alkenyl ether compound or halogenated alkyl ether compound. The amount of the acid labile group and the crosslinking group combined is on the average from more than 0 mol % to 80 mol % of the entirety of the phenolic hydroxyl group, alcoholic hydroxyl group and carboxyl group. The polymer has Mw of 1,000-500,000. ##STR1## R.sup.1 is H or methyl, R.sup.2 is C.sub.1 -C.sub.8 alkyl, R.sup.3 is a divalent C.sub.1 -C.sub.18 hydrocarbon group which may have a hetero atom, R.sup.4 and R.sup.5 are H or monovalent C.sub.1 -C.sub.18 hydrocarbon groups which may have a hetero atom, x and y are integers satisfying x+y.ltoreq.5, x', y' and z' are integers satisfying x'+y'+z'.ltoreq.5, p, q and r are numbers satisfying 0.ltoreq.p.ltoreq.0.4, 0.ltoreq.q.ltoreq.0.4, 0.01.ltoreq.p+q.ltoreq.0.8, and p+q+r=1. A chemically amplified positive resist composition comprising the polymer as a base resin has high sensitivity, high resolution, a wide latitude of exposure, and process adaptability and forms resist patterns having plasma etching resistance and heat resistance.
摘要翻译：提供了包含式（1）的重复单元的聚合物，其中酚羟基和/或醇羟基和/或羧基的一些氢原子被酸不稳定基团取代。聚合物与由一些残留的醇羟基和/或羧基与链烯基醚化合物或卤代烷基醚化合物的反应产生的具有C-O-C键的交联基团交联。酸不稳定基团和交联基团的结合量平均为全部酚羟基，醇羟基和羧基的0摩尔％至80摩尔％以上。聚合物的Mw为1,000-500,000。 R1是H或甲基，R2是C1-C8烷基，R3是可以具有杂原子的二价C1-C18烃基，R4和R5是H或可以具有杂原子的一价C1-C18烃基，x和 y是满足x + y <5的整数，x'，y'和z'是满足x'+ y'+ z'= 5的整数，p，q和r是满足0

56. 发明授权

US5985512A Chemically amplified positive resist compositions 失效
标题翻译：化学扩增的正性抗蚀剂组合物
公开(公告)号：US5985512A
公开(公告)日：1999-11-16
申请号：US831750
申请日：1997-04-01
申请人： Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
发明人： Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/106
摘要： A chemically amplified positive resist composition is prepared by blending (A) an organic solvent, (B) a base resin, and (C) a photoacid generator with a mixture of (1) a nitrogenous organic compound having pKa.gtoreq.7 and a vapor pressure of less than 2 Torr at 100.degree. C. and (2) a nitrogenous organic compound having pKa.gtoreq.7 and a vapor pressure of 2-100 Torr at 100.degree. C. The resist composition has high sensitivity to actinic radiation and high resolution, is developable with aqueous base to form a pattern without a T-top profile by PED and footing on the substrate surface, and is suitable for fine processing.
摘要翻译：通过将（A）有机溶剂，（B）基础树脂和（C）光酸产生剂与（1）具有pKa = 7的含氮有机化合物和在100℃下蒸气压小于2乇，（2）在100℃下pKa> = 7，蒸汽压为2-100乇的含氮有机化合物。抗蚀剂组合物对光化辐射具有高敏感性，高分辨率，可用水性基底显影，通过PED形成图案，并且在基材表面上形成基底，并适用于精细加工。

57. 发明授权

US5972560A High molecular weight silicone compound, chemically amplified positive resist composition and patterning method 失效
标题翻译：高分子量硅氧烷化合物，化学放大正性抗蚀剂组合物和图案化方法
公开(公告)号：US5972560A
公开(公告)日：1999-10-26
申请号：US16448
申请日：1998-01-30
申请人： Ichiro Kaneko , Mutsuo Nakashima , Toshinobu Ishihara , Junji Tsuchiya , Jun Hatakeyama , Shigehiro Nagura
发明人： Ichiro Kaneko , Mutsuo Nakashima , Toshinobu Ishihara , Junji Tsuchiya , Jun Hatakeyama , Shigehiro Nagura
IPC分类号： C08G77/50 , C08L83/14 , G03F7/004 , G03F7/075 , C08G77/04
CPC分类号： G03F7/0045 , C08G77/50 , C08L83/14 , G03F7/0757
摘要： The invention provides a high molecular weight silicone compound comprising recurring units of the general formula (1) and having a weight average molecular weight of 1,000-50,000. ##STR1## Z is a di- to hexavalent, monocyclic or polycyclic hydrocarbon group or bridged cyclic hydrocarbon group of 5-12 carbon atoms, R.sup.1 is a substituted or unsubstituted alkyl or alkenyl group of 1-8 carbon atoms, R.sup.2 is an acid labile group, m is 0 or an integer, n is an integer, satisfying m+n.ltoreq.5, x is an integer, p1 and p2 are positive numbers, q is 0 or a positive number, satisfying 0
摘要翻译：本发明提供了包含通式（1）的重复单元并具有1,000-50,000的重均分子量的高分子量硅氧烷化合物。 Z是5至12个碳原子的二至六价单环或多环烃基或桥环状烃基，R1是取代或未取代的1-8个碳原子的烷基或链烯基，R2是酸不稳定基团，m 是0或整数，n是整数，满足m + n <5，x是整数，p1和p2是正数，q是0或正数，满足0

58. 发明授权

US5972559A Chemically amplified positive resist compositions 失效
标题翻译：化学扩增的正性抗蚀剂组合物
公开(公告)号：US5972559A
公开(公告)日：1999-10-26
申请号：US884503
申请日：1997-06-27
申请人： Satoshi Watanabe , Katsuya Takemura , Shigehiro Nagura
发明人： Satoshi Watanabe , Katsuya Takemura , Shigehiro Nagura
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： A chemically amplified positive resist composition is prepared by blending (A) an organic solvent, (B) a base resin in the form of a polyhydroxystyrene having some hydroxyl groups replaced by acid labile groups and a Mw of 3,000-300,000, (C) a photoacid generator, and (D) an aromatic compound having a group: --R.sup.13 --COOH in a molecule. The resist composition is sensitive to actinic radiation, especially KrF excimer laser and X-ray, has high sensitivity, resolution, and plasma etching resistance, and is effective for improving the footing and PED on nitride substrates.
摘要翻译：通过将（A）有机溶剂，（B）具有由酸不稳定基团取代的一些羟基的聚羟基苯乙烯形式的基础树脂和3,000-300,000的Mw（C）共混制备化学放大正性抗蚀剂组合物光生酸发生剂，（D）分子中具有-R13-COOH基团的芳香族化合物。抗蚀剂组合物对光化辐射敏感，特别是KrF准分子激光和X射线，具有高灵敏度，分辨率和等离子体耐蚀刻性，对于改善氮化物衬底上的基脚和PED是有效的。

59. 发明授权

US5847218A Sulfonium salts and chemically amplified positive resist compositions 失效
标题翻译：锍盐和化学增幅阳性抗蚀剂组合物
公开(公告)号：US5847218A
公开(公告)日：1998-12-08
申请号：US811530
申请日：1997-03-04
申请人： Youichi Ohsawa , Satoshi Watanabe , Junji Shimada , Katsuya Takemura , Shigehiro Nagura , Toshinobu Ishihara
发明人： Youichi Ohsawa , Satoshi Watanabe , Junji Shimada , Katsuya Takemura , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： C07C381/12 , G03F7/004 , G03F7/029 , G03F7/039 , H01L21/027 , C07C211/44
CPC分类号： C07C381/12 , G03F7/0045
摘要： The invention provides a novel sulfonium salt having a substituted or unsubstituted arylsulfonate anion. The novel sulfonium salt minimizes the influence of deactivation by basic compounds not only at a resist surface, but also at a resist-substrate interface, assists a resist to be configured to a definite pattern profile. When the sulfonium salt has an acid labile group, it is effective for increasing the dissolution contrast between exposed and unexposed areas. The sulfonium salt is useful in a chemically amplified positive resist composition which lends itself to fine patterning and features high resolution.
摘要翻译：本发明提供了具有取代或未取代的芳基磺酸根阴离子的新型锍盐。新型锍盐不仅在抗蚀剂表面，而且在抗蚀剂 - 基材界面处，使碱性化合物失活的影响最小化，有助于将抗蚀剂配置成确定的图案轮廓。当锍盐具有酸不稳定基团时，对于增加暴露区域和未暴露区域之间的溶解度对比度是有效的。锍盐可用于化学放大的正性抗蚀剂组合物，其具有精细的图案化并具有高分辨率。

60. 发明授权

US5824824A Sulfonium salts and chemically amplified positive resist compositions 失效
标题翻译：锍盐和化学增幅阳性抗蚀剂组合物
公开(公告)号：US5824824A
公开(公告)日：1998-10-20
申请号：US742323
申请日：1996-11-01
申请人： Yoichi Osawa , Satoshi Watanabe , Kaysuya Takemura , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
发明人： Yoichi Osawa , Satoshi Watanabe , Kaysuya Takemura , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
IPC分类号： C07C381/12 , G03F7/004 , C07C319/00
CPC分类号： G03F7/0045 , C07C381/12 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： The invention provides a novel sulfonium salt having at least one acid labile group attached to a phenyl group in a molecule and a C.sub.2 -C.sub.20 alkylsulfonate or arylsulfonate anion whose alkyl or aryl has as a substituent an electron withdrawing group such as fluorine and nitro group. The novel sulfonium salt is effective for increasing the dissolution contrast between exposed and unexposed areas. Upon exposure, it generates a substituted alkyl or arylsulfonic acid which is a weak acid, minimizing the influence of side reaction and deactivation during PEB step. The sulfonium salt is useful in a chemically amplified positive resist composition which lends itself to fine patterning and features high resolution.
摘要翻译：本发明提供了一种新的锍盐，其具有至少一个与分子中的苯基连接的酸不稳定基团，和其烷基或芳基具有诸如氟和硝基的吸电子基团的取代基的C 2 -C 20烷基磺酸盐或芳基磺酸根阴离子。新型锍盐对于增加曝光和未曝光区域之间的溶解度对比是有效的。暴露后，产生弱酸的取代烷基或芳基磺酸，使PEB步骤中副反应和失活的影响最小化。锍盐可用于化学放大的正性抗蚀剂组合物，其具有精细的图案化并具有高分辨率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式