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    • 51. 发明授权
    • Resist compositions
    • 抗蚀剂组合物
    • US06274286B1
    • 2001-08-14
    • US09105003
    • 1998-06-26
    • Jun HatakeyamaTsunehiro NishiTakeshi NagataShigehiro Nagura
    • Jun HatakeyamaTsunehiro NishiTakeshi NagataShigehiro Nagura
    • G03F7004
    • G03F7/0045Y10S430/106
    • A chemically amplified positive resist composition comprising at least one basic compound of the following general formula (1) or (2): wherein R1, R2, R3, R7, and R8 are independently normal, branched or cyclic alkylene groups having 1 to 20 carbon atoms, R4, R5, R6, R9, and R10 are independently hydrogen, alkyl groups having 1 to 20 carbon atoms or amino groups, R4 and R5, R5 and R6, R4 and R6, or R8, R5 and R5, and R9 and R10, taken together, may form a ring, letters k, m and n are integers of 0 to 20, with the proviso that hydrogen is excluded from R4, R5, R6, R9 and R10 when k, m or n is equal to 0. The resist compositions of the present invention are effective for preventing resist films from thinning and for increasing the focus margin of an isolated pattern.
    • 一种化学放大正型抗蚀剂组合物,其包含至少一种下列通式(1)或(2)的碱性化合物:其中R 1,R 2,R 3,R 7和R 8独立地为具有1至20个碳的正,支链或环状亚烷基 原子,R 4,R 5,R 6,R 9和R 10独立地是氢,具有1至20个碳原子的烷基或氨基,R 4和R 5,R 5和R 6,R 4和R 6,或R 8,R 5和R 5, R 10一起可以形成环,字母k,m和n是0至20的整数,条件是当k,m或n等于0时,从R4,R5,R6,R9和R10排除氢。 本发明的抗蚀剂组合物对于防止抗蚀剂膜变薄和增加隔离图案的聚焦边缘是有效的。
    • 54. 发明授权
    • Polymeric compounds, chemically amplified positive type resist materials
and process for pattern formation
    • 聚合化合物,化学放大正型抗蚀剂材料和图案形成工艺
    • US6048661A
    • 2000-04-11
    • US33147
    • 1998-03-02
    • Tsunehiro NishiJun HatakeyamaShigehiro NaguraToshinobu Ishihara
    • Tsunehiro NishiJun HatakeyamaShigehiro NaguraToshinobu Ishihara
    • G03F7/004G03F7/039
    • G03F7/0045G03F7/039Y10S430/106Y10S430/11Y10S430/111
    • Provided are polymeric compounds which, when used as base resins in resist materials, can yield chemical resist materials having high sensitivity, high resolution, a high exposure latitude, and good process adaptability, exhibiting excellent resistance to plasma etching, and giving resist patterns having high thermal resistance, as well as chemically amplified positive type resist materials using such polymeric compounds as base resins. These chemically amplified positive type resist materials use a base resin comprising a polymeric compound having a weight-average molecular weight of 1,000 to 500,000 and having one or more hydroxyl and/or carboxyl groups in the molecule, part or all of the hydrogen atoms of the hydroxyl and/or carboxyl groups being replaced by groups of the following general formula ##STR1## and additionally contain an acid generator, a dissolution inhibitor, a basic compound, and an aromatic compound having a group of the formula .tbd.C--COOH.
    • 提供了当作为抗蚀剂材料中的基础树脂使用时,可以产生具有高灵敏度,高分辨率,高曝光宽容度和良好的工艺适应性的化学抗蚀剂材料,表现出优异的等离子体蚀刻性,并且具有高抗蚀剂图案的抗蚀剂图案 耐热性以及使用这种聚合物作为基础树脂的化学放大正型抗蚀剂材料。 这些化学放大正型抗蚀剂材料使用包含重均分子量为1,000至500,000并且在分子中具有一个或多个羟基和/或羧基的聚合化合物的基础树脂,部分或全部氢原子 羟基和/或羧基被下列通式的基团取代,另外含有酸产生剂,溶解抑制剂,碱性化合物和具有式3BOND C-COOH基团的芳族化合物。
    • 55. 发明授权
    • Polymers chemically amplified positive resist compositions, and
patterning method
    • 聚合物化学放大正性抗蚀剂组合物和图案化方法
    • US6027854A
    • 2000-02-22
    • US31560
    • 1998-02-27
    • Tsunehiro NishiOsamu WatanabeSatoshi WatanabeShigehiro NaguraToshinobu Ishihara
    • Tsunehiro NishiOsamu WatanabeSatoshi WatanabeShigehiro NaguraToshinobu Ishihara
    • G03F7/004G03F7/039
    • G03F7/039G03F7/0045Y10S430/106
    • A polymer comprising recurring units of formula (1) is provided wherein some hydrogen atoms of phenolic hydroxyl groups and/or alcoholic hydroxyl groups and/or carboxyl groups are replaced by acid labile groups. The polymer is crosslinked with a crosslinking group having a C--O--C linkage resulting from reaction of some of the remaining alcoholic hydroxyl groups and/or carboxyl groups with an alkenyl ether compound or halogenated alkyl ether compound. The amount of the acid labile group and the crosslinking group combined is on the average from more than 0 mol % to 80 mol % of the entirety of the phenolic hydroxyl group, alcoholic hydroxyl group and carboxyl group. The polymer has Mw of 1,000-500,000. ##STR1## R.sup.1 is H or methyl, R.sup.2 is C.sub.1 -C.sub.8 alkyl, R.sup.3 is a divalent C.sub.1 -C.sub.18 hydrocarbon group which may have a hetero atom, R.sup.4 and R.sup.5 are H or monovalent C.sub.1 -C.sub.18 hydrocarbon groups which may have a hetero atom, x and y are integers satisfying x+y.ltoreq.5, x', y' and z' are integers satisfying x'+y'+z'.ltoreq.5, p, q and r are numbers satisfying 0.ltoreq.p.ltoreq.0.4, 0.ltoreq.q.ltoreq.0.4, 0.01.ltoreq.p+q.ltoreq.0.8, and p+q+r=1. A chemically amplified positive resist composition comprising the polymer as a base resin has high sensitivity, high resolution, a wide latitude of exposure, and process adaptability and forms resist patterns having plasma etching resistance and heat resistance.
    • 提供了包含式(1)的重复单元的聚合物,其中酚羟基和/或醇羟基和/或羧基的一些氢原子被酸不稳定基团取代。 聚合物与由一些残留的醇羟基和/或羧基与链烯基醚化合物或卤代烷基醚化合物的反应产生的具有C-O-C键的交联基团交联。 酸不稳定基团和交联基团的结合量平均为全部酚羟基,醇羟基和羧基的0摩尔%至80摩尔%以上。 聚合物的Mw为1,000-500,000。 R1是H或甲基,R2是C1-C8烷基,R3是可以具有杂原子的二价C1-C18烃基,R4和R5是H或可以具有杂原子的一价C1-C18烃基,x和 y是满足x + y <5的整数,x',y'和z'是满足x'+ y'+ z'= 5的整数,p,q和r是满足0