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    • 53. 发明授权
    • Magneto-optical memory element
    • 磁光存储元件
    • US5414652A
    • 1995-05-09
    • US293720
    • 1994-08-22
    • Michinobu MiedaHiroyuki KatayamaAkira TakahashiKenji Ohta
    • Michinobu MiedaHiroyuki KatayamaAkira TakahashiKenji Ohta
    • G11B7/007G11B11/105G11C13/06
    • G11B7/24079G11B11/10584G11B7/00718
    • A magneto-optical memory element including: grooves, formed on at least one surface of a transparent substrate, for guiding a light beam; a magneto-optical recording layer formed on the surface of said transparent substrate on which the grooves are formed, wherein a width of each groove and a width of each land formed between the grooves are substantially equal, information is recorded on and reproduced from tracks on the grooves and the lands, and a groove depth d (track depth) is arranged such that 0.13.times..lambda./n.ltoreq.d.ltoreq. 0.18.times. .lambda./n, where .lambda. is a wavelength of the light beam and n is a refraction index of the transparent substrate. Assuming that a diameter of the light beam at a portion where a light intensity of the light beam becomes 1/e.sup.2 of a light intensity of the center of the light beam is L, a track pitch p is arranged such that 0.6.ltoreq.L/p.ltoreq.1.2. Therefore, even when the track density is increased, i.e., the width of the groove portion and the width of the land portion are reduced, a satisfactory signal quality with low level of crosstalk is obtained. Accordingly, such a magneto-optical disk achieves a high recording density.
    • 一种磁光存储元件,包括:形成在透明基板的至少一个表面上的用于引导光束的凹槽; 形成在所述透明基板的形成有凹槽的表面上的磁光记录层,其中每个凹槽的宽度和在凹槽之间形成的每个焊盘的宽度基本上相等,信息被记录在磁道上并从其上再现 凹槽和焊盘以及凹槽深度d(磁道深度)被布置成使得0.13xλ/n≤d≤0.18xλ/ n,其中λ是光束的波长,n是 透明基板的折射率。 假设在光束的光强度变为光束中心的光强度的1 / e2的部分处的光束的直径为L,则轨道间距p被布置成使得0.6≤L /p
    • 55. 发明授权
    • Magneto-optical storage media
    • 磁光存储介质
    • US06707766B2
    • 2004-03-16
    • US10099968
    • 2002-03-19
    • Go MoriNaoyasu IketaniMichinobu MiedaAkira Takahashi
    • Go MoriNaoyasu IketaniMichinobu MiedaAkira Takahashi
    • G11B1100
    • G11B11/10593G11B11/10584
    • A magneto-optical storage medium includes an interference layer, a magnetic domain expansion layer, an intermediate layer, a magnetic masking layer, a recording layer, and a protection layer which are sequentially formed on a substrate. The magnetic domain expansion layer produces a smaller frictional force due to wall coercivity than do the other magnetic layers. The intermediate layer has the Curie temperature TC2 which is lower than those of the other magnetic layers. The magnetic masking layer is in a perpendicular magnetization state at temperatures that are in a proximity of TC2, and changes into an in-plane magnetization state at temperatures that are higher than the proximity of TC2. The recording layer produces a higher coercive force than those produced by the magnetic domain expansion layer at room temperature.
    • 磁光存储介质包括依次形成在基板上的干涉层,磁畴扩展层,中间层,磁屏蔽层,记录层和保护层。 与其它磁性层相比,磁畴扩展层由于壁矫顽力而产生较小的摩擦力。 中间层的居里温度TC2低于其他磁性层的居里温度TC2。 磁屏蔽层在接近TC2的温度下处于垂直磁化状态,并且在高于TC2的接近度的温度下变为面内磁化状态。 记录层产生比在室温下由磁畴扩展层产生的矫顽力更高的矫顽力。
    • 56. 发明授权
    • Magneto-optical recording medium
    • 磁光记录介质
    • US06338911B1
    • 2002-01-15
    • US09429082
    • 1999-10-29
    • Go MoriNaoyasu IketaniMichinobu MiedaAkira Takahashi
    • Go MoriNaoyasu IketaniMichinobu MiedaAkira Takahashi
    • G11B566
    • G11B11/10515G11B11/10584G11B11/10593Y10S428/90
    • A reproduction layer, a magnetic domain extending layer, an intermediate layer, and a recording layer are formed in this order. The magnetic domain extending layer, the intermediate layer, and the recording layer are exchange-coupled. The intermediate layer has a Curie temperature lower than that of any other magnetic layer. A non-magnetic intermediate layer is formed between the reproduction layer and the magnetic domain extending layer. Upon reproduction, magnetization information in the recording layer is transferred to and extended in the magnetic domain extending layer, where an extended magnetic domain is formed. The reproduction layer is magnetostatically coupled with the magnetic domain extending layer, so that the extended magnetic domain is transferred to the reproduction layer. This makes it possible to provide a magneto-optical recording medium characterized in moving of magnetic domain walls and extension of magnetic domains in good conditions, and increased signal intensity with a simpler structure.
    • 依次形成再生层,磁畴延伸层,中间层和记录层。 磁畴延伸层,中间层和记录层是交换耦合的。 中间层的居里温度低于任何其他磁性层的居里温度。 在再现层和磁畴延伸层之间形成非磁性中间层。 在再现时,记录层中的磁化信息被转移到扩展磁畴的磁畴延伸层中并扩展。 再现层与磁畴延伸层磁静电耦合,从而将扩展磁畴转移到再现层。 这使得可以提供一种磁光记录介质,其特征在于在良好的条件下磁畴壁的移动和磁畴的延伸,并且以更简单的结构增加信号强度。
    • 59. 发明授权
    • Magneto-optical recording medium
    • 磁光记录介质
    • US06477120B1
    • 2002-11-05
    • US09451260
    • 1999-11-30
    • Naoyasu IketaniGo MoriMichinobu MiedaAkira Takahashi
    • Naoyasu IketaniGo MoriMichinobu MiedaAkira Takahashi
    • G11B1100
    • G11B11/10586G11B11/10515G11B11/10584
    • In order to provide a magneto-optical recording medium which can select a single recording magnetic domain in the recording layer accurately and expand and transfer the same to the reproducing layer, the magneto-optical recording medium is arranged in the following manner. That is, the magnetization direction of the reproducing layer is in-plane at room temperature and shifts to perpendicular at or above a predetermined temperature Ttrans.. The recording layer is a magnetic layer which is magneto-statically coupled to the reproducing layer and shows the perpendicular magnetization up to its Curie temperature. The magnetic mask layer is provided between the recording layer and reproducing layer, and the magnetization thereof is reduced to 0 (zero) at or above a predetermined temperature (Tm) which is at or above Ttrans.. The magnetization of the magnetic mask layer is larger than that of the recording layer at least in a range between room temperature and Ttrans..
    • 为了提供可以精确地选择记录层中的单个记录磁畴并将其扩展并传送到再现层的磁光记录介质,磁光记录介质以如下方式布置。 也就是说,再现层的磁化方向在室温下处于平面,并在预定温度T trans以上移动到垂直方向。记录层是磁性层,磁性层与再现层磁耦合,并显示出 垂直磁化强度达其居里温度。 磁记录层设置在记录层和再现层之间,其磁化强度在等于或高于Ttrans的预定温度(Tm)以上或者高于Ttrans的0(零)。磁屏蔽层的磁化强度为 大于记录层的至少在室温和Ttrans之间的范围内。