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    • 56. 发明授权
    • Method for testing studs and corresponding device
    • 螺栓和对应装置的测试方法
    • US06796182B2
    • 2004-09-28
    • US10332751
    • 2003-04-15
    • Joachim WagnerWalter Schappacher
    • Joachim WagnerWalter Schappacher
    • G01N2920
    • G01N29/043G01N2291/015G01N2291/0421G01N2291/0422G01N2291/044G01N2291/048G01N2291/102G01N2291/267G01N2291/2672
    • A method for non-destructive testing of a weld joint of a bolt welded onto a contact area on a planar sheet metal using the lift ignition method uses directed ultrasonic signals. During the welding operation a weld pool having a modified material structure is formed beneath the contact area in the sheet metal. Ultrasonic signals are transmitted into the sheet metal using a directed and obliquely transmitting ultrasonic transmitter positioned at a coupling-in point A. An ultrasonic receiver is positioned at a coupling-out point B and receives the ultrasonic signals transmitted through the sheet metal at the coupling-out point B, an acoustic path being formed between the coupling-in point A and the coupling-out point B. The acoustic path is positioned so that it passes a center of the contact area in a distance d from this center, d being smaller than the radius of an intact weld pool and bigger than the radius of a non-intact weld pool, and the intensity of the ultrasonic signals transmitted along the acoustic path from the coupling-in point A to the coupling-out point B is detected.
    • 使用提升点火方法焊接在平面金属板上的接触区域上的螺栓的焊接接头的非破坏性测试方法使用定向超声信号。 在焊接操作期间,在金属板的接触区域的下方形成具有改性材料结构的熔池。 使用位于耦合点A的定向和倾斜发射的超声波发射器将超声波信号传输到金属板中。超声波接收器位于耦合输出点B处,并接收在耦合处通过金属板传输的超声波信号 - 出点B,形成在耦合入点A和耦合输出点B之间的声学​​路径。声学路径被定位成使得其穿过距离该中心距离d的接触区域的中心,d 小于完整焊池的半径,并且大于不完整焊池的半径,并且检测沿着从耦合入点A到耦合输出点B的声路径传输的超声波信号的强度 。
    • 60. 发明授权
    • Infrared semiconductor laser
    • 红外半导体激光器
    • US08811442B2
    • 2014-08-19
    • US12855767
    • 2010-08-13
    • Nicola SchulzMarcel RattundeJoachim WagnerBenno Rösener
    • Nicola SchulzMarcel RattundeJoachim WagnerBenno Rösener
    • H01S5/323
    • H01S5/041B82Y20/00H01S5/3407H01S5/34306H01S5/34346
    • The present invention relates to a semiconductor laser having at least one quantum film in which electron hole pairs can be recombined, having at least two barrier layers between which respectively one of the at least one quantum films is disposed adjacently to these, directly in a planar manner or via respectively one intermediate film, and also having a pump device, the barrier layers having or consisting of AlzGa1-zAsySb1-y, with y greater than or equal to zero and less than or equal to one and z less than or equal to one and greater than 0.4, and/or having or consisting of AlzGauInvAsySb1-y, with z+u+v=1 and z greater than 0.25, the electron hole pairs being able to be produced directly in the quantum film with the pump device.
    • 本发明涉及一种具有至少一个量子膜的半导体激光器,其中电子空穴对可以被重新组合,其中至少两个阻挡层之间,其中至少一个量子膜中的至少一个与其相邻设置,直接在平面 方式或通过分别一个中间膜,并且还具有泵装置,所述阻挡层具有或由Al z Ga 1-z As y Sb 1-y组成,y大于或等于0且小于或等于1且z小于或等于 1和大于0.4,和/或具有或由AlzGauInvAsySb1-y组成,其中z + u + v = 1和z大于0.25,电子空穴对能够直接用泵装置在量子膜中产生。