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1. 发明授权

US08811442B2 Infrared semiconductor laser 有权
标题翻译：红外半导体激光器
公开(公告)号：US08811442B2
公开(公告)日：2014-08-19
申请号：US12855767
申请日：2010-08-13
申请人： Nicola Schulz , Marcel Rattunde , Joachim Wagner , Benno Rösener
发明人： Nicola Schulz , Marcel Rattunde , Joachim Wagner , Benno Rösener
IPC分类号： H01S5/323
CPC分类号： H01S5/041 , B82Y20/00 , H01S5/3407 , H01S5/34306 , H01S5/34346
摘要： The present invention relates to a semiconductor laser having at least one quantum film in which electron hole pairs can be recombined, having at least two barrier layers between which respectively one of the at least one quantum films is disposed adjacently to these, directly in a planar manner or via respectively one intermediate film, and also having a pump device, the barrier layers having or consisting of AlzGa1-zAsySb1-y, with y greater than or equal to zero and less than or equal to one and z less than or equal to one and greater than 0.4, and/or having or consisting of AlzGauInvAsySb1-y, with z+u+v=1 and z greater than 0.25, the electron hole pairs being able to be produced directly in the quantum film with the pump device.
摘要翻译：本发明涉及一种具有至少一个量子膜的半导体激光器，其中电子空穴对可以被重新组合，其中至少两个阻挡层之间，其中至少一个量子膜中的至少一个与其相邻设置，直接在平面方式或通过分别一个中间膜，并且还具有泵装置，所述阻挡层具有或由Al z Ga 1-z As y Sb 1-y组成，y大于或等于0且小于或等于1且z小于或等于 1和大于0.4，和/或具有或由AlzGauInvAsySb1-y组成，其中z + u + v = 1和z大于0.25，电子空穴对能够直接用泵装置在量子膜中产生。

2. 发明申请

US20110013658A1 INFRARED SEMICONDUCTOR LASER 有权
标题翻译：红外半导体激光
公开(公告)号：US20110013658A1
公开(公告)日：2011-01-20
申请号：US12855767
申请日：2010-08-13
申请人： Nicola Schulz , Marcel Rattunde , Joachim Wagner , Benno Rösener
发明人： Nicola Schulz , Marcel Rattunde , Joachim Wagner , Benno Rösener
IPC分类号： H01S5/343
CPC分类号： H01S5/041 , B82Y20/00 , H01S5/3407 , H01S5/34306 , H01S5/34346
摘要： The present invention relates to a semiconductor laser having at least one quantum film in which electron hole pairs can be recombined, having at least two barrier layers between which respectively one of the at least one quantum films is disposed adjacently to these, directly in a planar manner or via respectively one intermediate film, and also having a pump device, the barrier layers having or consisting of AlzGa1-zAsySbi-y, with y greater than or equal to zero and less than or equal to one and z less than or equal to one and greater than 0.4, and/or having or consisting of AlzGauInvAsySb1-y, with z+u+v=1 and z greater than 0.25, the electron hole pairs being able to be produced directly in the quantum film with the pump device.
摘要翻译：本发明涉及一种具有至少一个量子膜的半导体激光器，其中电子空穴对可以被重新组合，其中至少两个阻挡层之间，其中至少一个量子膜中的至少一个与其相邻设置，直接在平面方式或经由一个中间膜，并且还具有泵装置，所述阻挡层具有或由AlzGa1-zAsySbi-y组成，y大于或等于0且小于或等于1且z小于或等于 1和大于0.4，和/或具有或由AlzGauInvAsySb1-y组成，其中z + u + v = 1和z大于0.25，电子空穴对能够直接用泵装置在量子膜中产生。

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