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    • 60. 发明授权
    • Photoelectric enhanced plasma glow discharge system and method including
radiation means
    • 光电增强型等离子体辉光放电系统及方法,包括辐射装置
    • US4664769A
    • 1987-05-12
    • US791666
    • 1985-10-28
    • Jerome J. CuomoCharles R. Guarnieri
    • Jerome J. CuomoCharles R. Guarnieri
    • B01J19/08C23F4/00H01J37/32H01L21/203H01L21/302H01L21/31H05H1/22C23C14/00
    • G21B1/23H01J37/32321
    • Plasma enhancement is achieved in a plasma glow system by increasing the number of photoelectric electrons in the plasma glow by producing photoelectrons from the surface of a target in the system by the use of a radiation source. This is more particularly accomplished by flooding the surface of the target with a UV laser beam during the plasma process where emitted photoelectrons are injected into the plasma to increase the plasma density.The plasma enhancement is used in a sputter etching/deposition system which includes a chamber containing a cathode, a target, a substrate platform containing substrate and a pump. An ultraviolet light source such as a UV laser and focussing optics for focussing the UV radiation onto the target through a UV transmission window are also provided. A plasma region in the chamber is enhanced by photons from the laser striking the target and producing photoelectrons which are injected into the plasma to increase its density.
    • 通过使用辐射源从系统中的靶的表面产生光电子,通过增加等离子体辉光中的光电子数量,在等离子体发光系统中实现等离子体增强。 这通过在发射的光电子被注入到等离子体中的等离子体工艺期间用UV激光束淹没靶的表面来提高等离子体密度更特别地实现。 等离子体增强用于溅射蚀刻/沉积系统,其包括含有阴极,靶,含基底平台的基底和泵的腔室。 还提供了诸如UV激光和聚焦光学器件的紫外光源,用于通过UV透射窗将UV辐射聚焦到靶上。 腔中的等离子体区域被来自激光撞击靶的光子增强,并产生注入到等离子体中以增加其密度的光电子。