专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明申请

US20130299886A1 Backside Structure and Methods for BSI Image Sensors 有权
标题翻译： BSI图像传感器的背面结构和方法
公开(公告)号：US20130299886A1
公开(公告)日：2013-11-14
申请号：US13620016
申请日：2012-09-14
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
IPC分类号： H01L27/146 , H01L31/0216 , H01L31/18
CPC分类号： H01L27/14685 , G02B1/11 , H01L27/1462 , H01L27/14623 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L31/02161 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.
摘要翻译： BSI图像传感器和方法。在一个实施例中，提供具有传感器阵列和周边区域并具有前侧和后侧表面的基板; 底部抗反射涂层（BARC）在传感器阵列区域和外围区域的上方形成在第一厚度的背侧上; 在BARC上形成第一介电层; 形成金属屏蔽; 从所述传感器阵列区域上方选择性地去除所述金属屏蔽件; 从所述传感器阵列区域上方选择性地去除所述第一介电层，其中所述BARC的第一厚度的一部分也被去除，并且在选择性地去除所述第一介电层的过程中所述BARC的第一厚度的剩余部分保留; 在BARC的其余部分和金属屏蔽层之上形成第二电介质层; 以及在所述第二介电层上形成钝化层。

52. 发明授权

US08564085B2 CMOS image sensor structure 有权
公开(公告)号：US08564085B2
公开(公告)日：2013-10-22
申请号：US13185204
申请日：2011-07-18
申请人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Wen-De Wang
发明人： Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Chun-Chieh Chuang , Wen-De Wang
IPC分类号： H01L31/14
CPC分类号： H01L27/146 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14687
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a first substrate having a radiation-sensing region disposed therein. The method includes providing a second substrate having a hydrogen implant layer, the hydrogen implant layer dividing the second substrate into a first portion and a second portion. The method includes bonding the first portion of the second substrate to the first substrate. The method includes after the bonding, removing the second portion of the second substrate. The method includes after the removing, forming one or more microelectronic devices in the first portion of the second substrate. The method includes forming an interconnect structure over the first portion of the second substrate, the interconnect structure containing interconnect features that are electrically coupled to the microelectronic devices.

53. 发明授权

US08405182B2 Back side illuminated image sensor with improved stress immunity 有权
标题翻译：背面照明图像传感器，具有改善的抗应力
公开(公告)号：US08405182B2
公开(公告)日：2013-03-26
申请号：US13099092
申请日：2011-05-02
申请人： Keng-Yu Chou , Dun-Nian Yaung , Jen-Cheng Liu , Pao-Tung Cheng , Wen-De Wang , Chun-Chieh Chuang , Min-Feng Kao
发明人： Keng-Yu Chou , Dun-Nian Yaung , Jen-Cheng Liu , Pao-Tung Cheng , Wen-De Wang , Chun-Chieh Chuang , Min-Feng Kao
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/1464 , H01L27/14623 , H01L27/14636
摘要： Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the first side. The substrate has a pixel region and a periphery region. The image sensor device includes a plurality of radiation-sensing regions disposed in the pixel region of the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes a reference pixel disposed in the periphery region. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers. The image sensor device includes a film formed over the back side of the substrate. The film causes the substrate to experience a tensile stress. The image sensor device includes a radiation-blocking device disposed over the film.
摘要翻译：提供了一种图像传感器装置。图像传感器装置包括具有与第一侧相对的前侧和后侧的基板。基板具有像素区域和外围区域。图像传感器装置包括设置在基板的像素区域中的多个辐射感测区域。每个辐射感测区域可操作以感测通过后侧朝向辐射感测区域投射的辐射。图像传感器装置包括设置在周边区域中的参考像素。图像传感器装置包括耦合到基板的前侧的互连结构。互连结构包括多个互连层。图像传感器装置包括在基板的背面上形成的膜。该膜导致基材经受拉伸应力。图像传感器装置包括设置在膜上的辐射阻挡装置。

54. 发明申请

US20080303932A1 ISOLATION STRUCTURE FOR IMAGE SENSOR DEVICE 审中-公开
标题翻译：图像传感器设备的隔离结构
公开(公告)号：US20080303932A1
公开(公告)日：2008-12-11
申请号：US12120019
申请日：2008-05-13
申请人： Wen-De Wang , Jen-Cheng Liu , Dun-Nian Yaung , Chun-Chieh Chuang , Jyh-Ming Hung
发明人： Wen-De Wang , Jen-Cheng Liu , Dun-Nian Yaung , Chun-Chieh Chuang , Jyh-Ming Hung
IPC分类号： H04N5/335
CPC分类号： H01L27/14689 , H01L27/1463
摘要： Provided is an image sensor device including a substrate with a pixel region and a peripheral region. A first isolation structure is formed on the substrate in the pixel region. The first isolation structure includes a trench having a first depth. A second isolation structure is formed on the substrate in the peripheral region. The second isolation structure includes a trench having a second depth. The first depth is greater than the second depth.
摘要翻译：提供了一种包括具有像素区域和周边区域的基板的图像传感器装置。在像素区域中的衬底上形成第一隔离结构。第一隔离结构包括具有第一深度的沟槽。在周边区域的基板上形成第二隔离结构。第二隔离结构包括具有第二深度的沟槽。第一个深度大于第二个深度。

55. 发明授权

US09165970B2 Back side illuminated image sensor having isolated bonding pads 有权
标题翻译：具有隔离接合垫的背面照明图像传感器
公开(公告)号：US09165970B2
公开(公告)日：2015-10-20
申请号：US13028471
申请日：2011-02-16
申请人： Shuang-Ji Tsai , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Hsiao-Hui Tseng
发明人： Shuang-Ji Tsai , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Hsiao-Hui Tseng
IPC分类号： H01L27/146
CPC分类号： H01L27/14687 , H01L23/481 , H01L23/525 , H01L24/83 , H01L27/14623 , H01L27/14632 , H01L27/14636 , H01L27/14638 , H01L27/1464 , H01L27/14645 , H01L27/14683 , H01L27/14689
摘要： Provided is an image sensor device. The image sensor device includes having a front side, a back side, and a sidewall connecting the front and back sides. The image sensor device includes a plurality of radiation-sensing regions disposed in the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers and extends beyond the sidewall of the substrate. The image sensor device includes a bonding pad that is spaced apart from the sidewall of the substrate. The bonding pad is electrically coupled to one of the interconnect layers of the interconnect structure.
摘要翻译：提供了一种图像传感器装置。图像传感器装置包括具有连接前侧和后侧的前侧，后侧和侧壁。图像传感器装置包括设置在基板中的多个辐射感测区域。每个辐射感测区域可操作以感测通过后侧朝向辐射感测区域投射的辐射。图像传感器装置包括耦合到基板的前侧的互连结构。互连结构包括多个互连层并且延伸超过衬底的侧壁。图像传感器装置包括与衬底的侧壁间隔开的接合焊盘。接合焊盘电连接到互连结构的互连层之一。

56. 发明授权

US08293122B2 Dual metal for a backside package of backside illuminated image sensor 有权
标题翻译：用于背面照明图像传感器背面封装的双金属
公开(公告)号：US08293122B2
公开(公告)日：2012-10-23
申请号：US12356968
申请日：2009-01-21
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Jyh-Ming Hung , Pao-Tung Chen
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Jyh-Ming Hung , Pao-Tung Chen
IPC分类号： H01B13/00
CPC分类号： H01L27/14636 , H01L24/82 , H01L27/14632 , H01L27/1464 , H01L27/14687 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01049 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/04941 , H01L2924/10329 , H01L2924/10336 , H01L2924/14 , H01L2924/30105
摘要： A method for fabricating a semiconductor device with improved bonding ability is disclosed. The method comprises providing a substrate having a front surface and a back surface; forming one or more sensor elements on the front surface of the substrate; forming one or more metallization layers over the front surface of the substrate, wherein forming a first metallization layer comprises forming a first conductive layer over the front surface of the substrate; removing the first conductive layer from a first region of the substrate; forming a second conductive layer over the front surface of the substrate; and removing portions of the second conductive layer from the first region and a second region of the substrate, wherein the first metallization layer in the first region comprises the second conductive layer and the first metallization layer in the second region comprises the first conductive layer and the second conductive layer.
摘要翻译：公开了一种制造具有改进的接合能力的半导体器件的方法。该方法包括提供具有前表面和后表面的基底; 在所述基板的前表面上形成一个或多个传感器元件; 在衬底的前表面上形成一个或多个金属化层，其中形成第一金属化层包括在衬底的前表面上形成第一导电层; 从所述衬底的第一区域去除所述第一导电层; 在所述基板的前表面上形成第二导电层; 以及从所述第一区域和所述衬底的第二区域去除所述第二导电层的部分，其中所述第一区域中的所述第一金属化层包括所述第二导电层，并且所述第二区域中的所述第一金属化层包括所述第一导电层和第二导电层。

57. 发明申请

US20120205769A1 BACK SIDE ILLUMINATED IMAGE SENSOR WITH REDUCED SIDEWALL-INDUCED LEAKAGE 有权
标题翻译：具有降低的侧壁感应泄漏的背面照明图像传感器
公开(公告)号：US20120205769A1
公开(公告)日：2012-08-16
申请号：US13028471
申请日：2011-02-16
申请人： Shuang-Ji Tsai , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Hsiao-Hui Tseng
发明人： Shuang-Ji Tsai , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Hsiao-Hui Tseng
IPC分类号： H01L31/02 , H01L31/18
CPC分类号： H01L27/14687 , H01L23/481 , H01L23/525 , H01L24/83 , H01L27/14623 , H01L27/14632 , H01L27/14636 , H01L27/14638 , H01L27/1464 , H01L27/14645 , H01L27/14683 , H01L27/14689
摘要： Provided is an image sensor device. The image sensor device includes having a front side, a back side, and a sidewall connecting the front and back sides. The image sensor device includes a plurality of radiation-sensing regions disposed in the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers and extends beyond the sidewall of the substrate. The image sensor device includes a bonding pad that is spaced apart from the sidewall of the substrate. The bonding pad is electrically coupled to one of the interconnect layers of the interconnect structure.
摘要翻译：提供了一种图像传感器装置。图像传感器装置包括具有连接前侧和后侧的前侧，后侧和侧壁。图像传感器装置包括设置在基板中的多个辐射感测区域。每个辐射感测区域可操作以感测通过后侧朝向辐射感测区域投射的辐射。图像传感器装置包括耦合到基板的前侧的互连结构。互连结构包括多个互连层并且延伸超过衬底的侧壁。图像传感器装置包括与衬底的侧壁间隔开的接合焊盘。接合焊盘电连接到互连结构的互连层之一。

58. 发明授权

US08164124B2 Photodiode with multi-epi films for image sensor 有权
标题翻译：用于图像传感器的多面膜的光电二极管
公开(公告)号：US08164124B2
公开(公告)日：2012-04-24
申请号：US11752012
申请日：2007-05-22
申请人： Jen-Cheng Liu , Dun-Nian Yaung , Jyh-Ming Hung , Wen-De Wang , Chun-Chieh Chuang
发明人： Jen-Cheng Liu , Dun-Nian Yaung , Jyh-Ming Hung , Wen-De Wang , Chun-Chieh Chuang
IPC分类号： H01L29/76
CPC分类号： H01L27/14643 , H01L27/14601 , H01L27/14621 , H01L27/14627 , H01L27/14689 , H01L27/14812
摘要： The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate; a first epitaxy semiconductor layer disposed on the semiconductor substrate and having a first type of dopant and a first doping concentration; a second epitaxy semiconductor layer disposed over the first epitaxy semiconductor layer and having the first type of dopant and a second doping concentration less than the first doping concentration; and an image sensor on the second epitaxy semiconductor layer.
摘要翻译：本公开提供了一种图像传感器半导体器件。半导体器件包括半导体衬底; 第一外延半导体层，其设置在所述半导体衬底上并且具有第一类型的掺杂剂和第一掺杂浓度; 第二外延半导体层，设置在所述第一外延半导体层上并且具有所述第一类型的掺杂物和小于所述第一掺杂浓度的第二掺杂浓度; 以及第二外延半导体层上的图像传感器。

59. 发明申请

US20080246063A1 PHOTODIODE WITH MULTI-EPI FILMS FOR IMAGE SENSOR 有权
标题翻译：用于图像传感器的多个EPI膜的光致抗体
公开(公告)号：US20080246063A1
公开(公告)日：2008-10-09
申请号：US11752012
申请日：2007-05-22
申请人： Jen-Cheng Liu , Dun-Nian Yaung , Jyh-Ming Hung , Wen-De Wang , Chun-Chieh Chuang
发明人： Jen-Cheng Liu , Dun-Nian Yaung , Jyh-Ming Hung , Wen-De Wang , Chun-Chieh Chuang
IPC分类号： H01L31/113 , H01L31/0232
CPC分类号： H01L27/14643 , H01L27/14601 , H01L27/14621 , H01L27/14627 , H01L27/14689 , H01L27/14812
摘要： The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate; a first epitaxy semiconductor layer disposed on the semiconductor substrate and having a first type of dopant and a first doping concentration; a second epitaxy semiconductor layer disposed over the first epitaxy semiconductor layer and having the first type of dopant and a second doping concentration less than the first doping concentration; and an image sensor on the second epitaxy semiconductor layer.
摘要翻译：本公开提供了一种图像传感器半导体器件。半导体器件包括半导体衬底; 第一外延半导体层，其设置在所述半导体衬底上并且具有第一类型的掺杂剂和第一掺杂浓度; 第二外延半导体层，设置在所述第一外延半导体层上并且具有所述第一类型的掺杂物和小于所述第一掺杂浓度的第二掺杂浓度; 以及第二外延半导体层上的图像传感器。

60. 发明授权

US08709854B2 Backside structure and methods for BSI image sensors 有权
标题翻译： BSI图像传感器的背面结构和方法
公开(公告)号：US08709854B2
公开(公告)日：2014-04-29
申请号：US13620016
申请日：2012-09-14
申请人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
发明人： Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , G02B1/11 , H01L27/1462 , H01L27/14623 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L31/02161 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.
摘要翻译： BSI图像传感器和方法。在一个实施例中，提供具有传感器阵列和周边区域并具有前侧和后侧表面的基板; 底部抗反射涂层（BARC）在传感器阵列区域和外围区域的上方形成在第一厚度的背侧上; 在BARC上形成第一介电层; 形成金属屏蔽; 从所述传感器阵列区域上方选择性地去除所述金属屏蔽件; 从所述传感器阵列区域上方选择性地去除所述第一介电层，其中所述BARC的第一厚度的一部分也被去除，并且在选择性地去除所述第一介电层的过程中所述BARC的第一厚度的剩余部分保留; 在BARC的其余部分和金属屏蔽层之上形成第二电介质层; 以及在所述第二介电层上形成钝化层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式