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51. 发明申请

US20070257280A1 Complementary metal oxide semiconductor (CMOS) image sensor with extended pixel dynamic range incorporating transfer gate with potential well 有权
标题翻译：具有扩展像素动态范围的互补金属氧化物半导体（CMOS）图像传感器，具有潜在的良好的传输门
公开(公告)号：US20070257280A1
公开(公告)日：2007-11-08
申请号：US11711821
申请日：2007-02-28
申请人： Jaroslav Hynecek
发明人： Jaroslav Hynecek
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/1463 , H04N5/3559 , H04N5/37457
摘要： A charge transfer transistor includes: a first diffusion region and a second diffusion region; a gate for controlling a charge transfer from the first diffusion region to the second diffusion region by a control signal; and a potential well incorporated under the gate, wherein the first diffusion region is a pinned photodiode. A pixel of an image sensor includes: a photodiode for generating and collecting a photo generated charge; a floating diffusion region for serving as a photo generated charge sensing node; a transfer gate for controlling a charge transfer from the photodiode to the floating diffusion region by a control signal; and a potential well incorporated under the transfer gate.
摘要翻译：电荷转移晶体管包括：第一扩散区和第二扩散区; 用于控制通过控制信号从第一扩散区到第二扩散区的电荷转移的栅极; 以及在栅极下并入的电势，其中第一扩散区域是钉扎光电二极管。图像传感器的像素包括：用于产生和收集照片产生的电荷的光电二极管; 用作光电产生电荷感测节点的浮动扩散区域; 用于通过控制信号控制从光电二极管到浮动扩散区域的电荷转移的传输门; 和一个潜在的并入传输门下的潜力。

52. 发明授权

US07218350B2 Image sensor with digital output and inherent pixel non-uniformity suppression 有权
标题翻译：具有数字输出和固有像素不均匀性抑制的图像传感器
公开(公告)号：US07218350B2
公开(公告)日：2007-05-15
申请号：US10610091
申请日：2003-06-30
申请人： Jaroslav Hynecek
发明人： Jaroslav Hynecek
IPC分类号： H04N5/335
CPC分类号： H04N5/3535 , H04N5/35554
摘要： The image sensing device provides a digital output for each pixel. As charge builds up in a pixel, the pixel output increases until it reaches a reference level. When the reference level is crossed the pixel is reset. This process is repeated several times in a given frame time cycle with the reference level steadily decreasing. The various reset times represent the light intensity on the pixel. For an image sensor array, the array is scanned multiple times during one image frame time cycle and the reference level is lowered each scan. This provides an image sensor that has built-in pixel non-uniformity suppression, digital output, and high sensitivity.
摘要翻译：图像感测装置为每个像素提供数字输出。随着电荷在一个像素中建立，像素输出增加直到达到参考电平。当参考电平越过像素时，复位。在给定的帧时间周期内重复该过程多次，参考电平稳定下降。各种复位时间表示像素上的光强度。对于图像传感器阵列，在一个图像帧时间周期内扫描阵列多次，并且每次扫描降低参考电平。这提供了一种具有内置像素非均匀性抑制，数字输出和高灵敏度的图像传感器。

53. 发明申请

US20050194653A1 Method and apparatus for improving sensitivity in vertical color CMOS image sensors 有权
标题翻译：用于提高垂直彩色CMOS图像传感器灵敏度的方法和装置
公开(公告)号：US20050194653A1
公开(公告)日：2005-09-08
申请号：US10796763
申请日：2004-03-08
申请人： Jaroslav Hynecek , Richard Merrill , Russel Martin
发明人： Jaroslav Hynecek , Richard Merrill , Russel Martin
IPC分类号： H01L29/768
CPC分类号： H01L27/14647 , H01L27/14609 , H01L27/14636 , H04N9/045
摘要： The invention describes in detail the structure of a CMOS image sensor pixel that senses color of impinging light without having absorbing filters placed on its surface. The color sensing is accomplished by having a vertical stack of three-charge detection nodes placed in the silicon bulk, which collect electrons depending on the depth of their generation. The small charge detection node capacitance and thus high sensitivity with low noise is achieved by using fully depleted, potential well forming, buried layers instead of undepleted junction electrodes. Two embodiments of contacting the buried layers without substantially increasing the node capacitances are presented.
摘要翻译：本发明详细描述了在没有放置在其表面上的吸收滤光器的情况下感测入射光的颜色的CMOS图像传感器像素的结构。彩色感测是通过将三电荷检测节点的垂直堆叠放置在硅体中来完成的，该堆叠根据其生成的深度收集电子。通过使用完全耗尽的势阱形成掩埋层而不是未剥离的结电极，实现小电荷检测节点电容以及因此具有低噪声的高灵敏度。提出了接触埋层而基本上不增加节点电容的两个实施例。

54. 发明授权

US06882022B2 Dual gate BCMD pixel suitable for high performance CMOS image sensor arrays 有权
标题翻译：双栅BCMD像素适用于高性能CMOS图像传感器阵列
公开(公告)号：US06882022B2
公开(公告)日：2005-04-19
申请号：US10654451
申请日：2003-09-04
申请人： Jaroslav Hynecek
发明人： Jaroslav Hynecek
IPC分类号： H01L27/146 , H01L27/148 , H01L31/06
CPC分类号： H01L27/14609 , H01L27/14601
摘要： A Dual Gate BCMD pixel has a compact size, nondestructive readout; complete reset with no kTC-reset noise generation, anti-blooming protection, and column reset capability. By incorporating a dual gate MOS transistor with an enclosed annular layout into the pixels of image sensing array, and sensing photo-generated charge nondestructively by detecting the transistor threshold voltage variations caused by collected charge, achieves this goal and other objects of the invention.
摘要翻译：双门BCMD像素具有紧凑的尺寸，非破坏性读出; 完全复位，无kTC复位噪声产生，防起霜保护和列复位功能。通过将具有封闭环形布局的双栅极MOS晶体管结合到图像感测阵列的像素中，并且通过检测由收集的电荷引起的晶体管阈值电压变化来非破坏性地感测光生电荷，实现了本发明的该目的和其它目的。

55. 发明授权

US06784412B2 Compact image sensor layout with charge multiplying register 有权
标题翻译：具有充电倍增寄存器的紧凑型图像传感器布局
公开(公告)号：US06784412B2
公开(公告)日：2004-08-31
申请号：US10217181
申请日：2002-08-12
申请人： Jaroslav Hynecek
发明人： Jaroslav Hynecek
IPC分类号： H01L2700
CPC分类号： H01L27/14831
摘要： The image sensing device incorporates a charge multiplication function in its serial register. The design layout is compact in size and the charge multiplication register consists of multi-channel sections that are evenly positioned around the periphery of the image sensing area. The individual charge multiplying register sections are coupled together by only 90-degree multi-channel turns located at the image area array corners. The device allows for the optical image sensing area center to be located near the chip center and consequently near the mechanical package center with the minimum silicon chip area sacrifice.
摘要翻译：图像感测装置在其串行寄存器中包含电荷倍增功能。设计布局尺寸紧凑，充电倍增寄存器由均匀定位在图像感测区域外围的多通道部分组成。各个电荷乘法寄存器部分通过位于图像区域阵列拐角处的仅90度的多通道匝耦合在一起。该器件允许光学图像感测区域中心位于芯片中心附近，并因此靠近机械封装中心，牺牲最小的硅芯片面积。

56. 发明授权

US06608337B2 Image sensor with an enhanced near infra-red spectral response and method of making 有权
公开(公告)号：US06608337B2
公开(公告)日：2003-08-19
申请号：US09833194
申请日：2001-04-12
申请人： Jaroslav Hynecek
发明人： Jaroslav Hynecek
IPC分类号： H01L31113
CPC分类号： H01L27/14609 , H01L27/14649 , H01L27/14806
摘要： Image sensors with an enhanced QE and MTF in the NIR spectral region are fabricated on the standard substrates. This is achieved by replacing the p+ type doped layer, typically present under the thick field oxide in the inactive regions of the sensor, with an n+ type doped layer. The n+ type layer, which is biased at the Vdd potential, surrounds the entire image sensor array as a guard ring and is separated from the CCD or CMOS array pixels by a suitable potential barrier. The potential barrier prevents collected charge from escaping into the n+ layer regions. Additional embodiments include output diode and MOS transistor designs that use field plates for creating potential barriers that separate these devices from the n+ type doped field regions.

57. 发明授权

US06518607B2 Low feed through-high dynamic range charge detection using transistor punch through reset 有权
标题翻译：使用晶体管穿通复位的低馈入高电平动态范围电荷检测
公开(公告)号：US06518607B2
公开(公告)日：2003-02-11
申请号：US09874033
申请日：2001-06-06
申请人： Jaroslav Hynecek
发明人： Jaroslav Hynecek
IPC分类号： H01L27148
CPC分类号： H01L27/14806 , H04N5/37213
摘要： A new High Dynamic Range charge detection concept useful for CCD and Active Pixel CMOS image sensors uses at least one transistor operating in a punch through mode for the charge detection node reset. The punch through operation significantly reduces the reset feed through which leads to a higher voltage swing available on the node for the signal. This in turn allows building smaller and thus more sensitive charge detection nodes. The undesirabe artifacts, associated with the incomplete reset that are induced by the punch through operation, are completely removed by incorporating the CDS signal processing method into the signal processing chain. The incomplete reset artifact removal by the CDS technique is extended to all other resetting concepts that are modeled by a large reset time constant. The punch through concept is suitable for resetting Floating Diffusion charge detection nodes as well as Floating Gate charge detection nodes.
摘要翻译：用于CCD和有源像素CMOS图像传感器的新型高动态范围电荷检测概念使用至少一个以穿孔模式工作的晶体管用于电荷检测节点复位。穿孔操作显着地减少了复位进给，通过该进给导致该信号在节点上提供更高的电压摆幅。这又允许构建较小的并因此更敏感的电荷检测节点。通过将冲击穿过操作引起的不完全复位相关联的不希望的伪影通过将CDS信号处理方法并入到信号处理链中被完全去除。通过CDS技术将不完整的复位工件删除扩展到由大的复位时间常数建模的所有其他复位概念。冲孔概念适用于复位浮动扩散电荷检测节点以及浮动栅极电荷检测节点。

58. 发明授权

US06229133B1 Image sensing device with delayed phase frequency modulation 有权
标题翻译：具有延迟相位调制的图像感测装置
公开(公告)号：US06229133B1
公开(公告)日：2001-05-08
申请号：US09174183
申请日：1998-10-16
申请人： Jaroslav Hynecek
发明人： Jaroslav Hynecek
IPC分类号： H04N314
CPC分类号： H04N5/35536 , H01L27/14609 , H04N5/3535 , H04N5/37455
摘要： An image sensing device includes: a light sensing element 20 for providing a signal in response to incident light; a comparator 24 coupled to the photo sensing element 20 for detecting when the signal reaches a reference level VREF; a resetting device 22 coupled to the light sensing element 20 for resetting the light sensing element 20 when the signal reaches the reference level VREF; and a memory device 26 coupled to the comparator 24 for receiving and storing an output from the comparator 24.
摘要翻译：图像感测装置包括：用于响应于入射光提供信号的光感测元件20; 耦合到光敏元件20的比较器24，用于检测信号何时达到参考电平VREF; 耦合到光感测元件20的复位装置22，用于当信号达到参考电平VREF时复位光感测元件20; 以及耦合到比较器24的存储器件26，用于接收和存储来自比较器24的输出。

59. 发明授权

US5317174A Bulk charge modulated device photocell 失效
标题翻译：大容量电荷调制装置光电管
公开(公告)号：US5317174A
公开(公告)日：1994-05-31
申请号：US19516
申请日：1993-02-19
申请人： Jaroslav Hynecek
发明人： Jaroslav Hynecek
IPC分类号： H01L27/146 , H01L31/113 , H01L27/14
CPC分类号： H01L31/1136 , H01L27/14643
摘要： A bulk charge modulated MOSFET for sensing light comprising a semiconductor substrate with a gate region of a first conductivity type formed in the substrate. The gate region forms a potential well for carriers of the first conductivity type. The well is formed at a substantial depth from the surface of the gate region. The carriers are formed responsive to incident light. The gate region collects the carriers generated at depths less than the well. A source region of a second conductivity type is formed in the semiconductor substrate laterally adjacent the gate region. The source region is operable to sense a change in threshold voltage of the MOSFET responsive to the collection of carriers by the gate region. A drain region of the second conductivity type is formed in the layer adjacent the gate region and spaced from the source. The drain region is connected to a voltage source. The voltage source is pulsed to create a large potential well that extends under the gate region from the source to the drain during charge integration period and a smaller potential well during readout period.
摘要翻译：一种用于感测光的体电荷调制MOSFET，包括形成在衬底中的具有第一导电类型的栅极区域的半导体衬底。栅极区形成第一导电类型的载流子的势阱。阱从栅极区域的表面形成在相当深度处。载体是响应于入射光而形成的。栅极区域收集在小于井的深度处产生的载流子。在半导体衬底中横向邻近栅极区域形成第二导电类型的源极区域。源极区域可操作以响应于栅极区域的载流子的集合来感测MOSFET的阈值电压的变化。第二导电类型的漏极区域形成在与栅极区域相邻并与源极间隔开的层中。漏极区域连接到电压源。电压源被脉冲以产生在电荷积分时段期间从源极到漏极的栅极区域下延伸的大势阱，以及读出期间较小的势阱。

60. 发明授权

US5278656A Imaging system providing amplified electrical image signal with inhibited heat buildup for visual display input 失效
标题翻译：成像系统提供放大的电子图像信号，具有禁止的热积聚用于视觉显示输入
公开(公告)号：US5278656A
公开(公告)日：1994-01-11
申请号：US619629
申请日：1990-11-28
申请人： Jaroslav Hynecek , Masao Uehara
发明人： Jaroslav Hynecek , Masao Uehara
IPC分类号： A61B1/04 , H04N5/225 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/361 , H04N5/369 , H04N5/3728 , H04N5/378 , H04N5/30
CPC分类号： H04N5/335 , H04N2005/2255
摘要： For a buffer amplifier provided near a solid state imaging device for photoelectrically converting an optical image by an image forming optical system and amplifying the signal of the output end, the temperature rise of the solid state imaging device is reduced by reducing the electric power consumption in a non-signal reading out period in which no driving signal is applied against a signal reading out period in which an image signal is output from the output end of this solid state imaging device by applying a driving signal to the solid state imaging device.
摘要翻译：对于靠近固态成像装置设置的用于通过图像形成光学系统对光学图像进行光电转换并放大输出端的信号的缓冲放大器，通过降低固态成像装置的电力消耗来降低固态成像装置的温度上升非信号读出期间，其中通过向固态成像装置施加驱动信号，不对来自该固态成像装置的输出端输出图像信号的信号读出期施加驱动信号。

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