专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US06947633B2 Dispersion compensation 失效
标题翻译：色散补偿
公开(公告)号：US06947633B2
公开(公告)日：2005-09-20
申请号：US10281934
申请日：2002-10-28
申请人： Harmeet Singh , Hamid R. Khazaei
发明人： Harmeet Singh , Hamid R. Khazaei
IPC分类号： G02B6/12 , G02B6/125 , G02B6/34 , G02B6/35 , H04B10/18 , G02B6/26 , G02B6/42
CPC分类号： G02B6/29394 , G02B6/12004 , G02B6/12007 , G02B6/125 , G02B6/29395 , G02B6/3516 , G02B6/356 , H04B10/25133
摘要： A tunable dispersion compensator that includes a free propagation region and an adjustment region. The free propagation region includes a first end and a second end, and allows an input lightwave signal having component signals with different wavelengths to propagate from the first end to the second end. The adjustment region directs the input lightwave into portions of the input lightwave, adjusts a characteristic of the portions of the input lightwave signal at the second end, and directs the adjusted portions of the input lightwave signal back towards the first end. The adjusted portions of the input lightwave signal combine at the first end to generate an output lightwave signal having a phase profile that is different from a phase profile of the input lightwave signal.
摘要翻译：可调谐色散补偿器，包括自由传播区域和调整区域。自由传播区域包括第一端和第二端，并允许具有不同波长的分量信号的输入光波信号从第一端传播到第二端。调整区域将输入光波导入输入光波的各部分，调整第二端的输入光波信号的部分的特性，并将输入光波信号的被调整部分引导回第一端。输入光波信号的调整部分在第一端组合以产生具有与输入光波信号的相位分布不同的相位分布的输出光波信号。

52. 发明授权

US08637794B2 Heating plate with planar heating zones for semiconductor processing 有权
标题翻译：加热板采用平面加热区进行半导体加工
公开(公告)号：US08637794B2
公开(公告)日：2014-01-28
申请号：US12582991
申请日：2009-10-21
申请人： Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
发明人： Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
IPC分类号： H05B3/10
CPC分类号： H01L21/67103 , C23C14/50 , C23C14/541 , C23C16/4586 , C23C16/46 , C23C16/509 , H01J37/32091 , H01J37/32724 , H01J2237/327 , H01J2237/332 , H01J2237/3321 , H01J2237/3323 , H01J2237/334 , H01J2237/3342 , H01J2237/3343 , H01L21/02274 , H01L21/0262 , H01L21/28556 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H05B1/0233 , H05B3/00 , H05B3/26 , Y10T29/49083 , Y10T29/49099
摘要： A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.
摘要翻译：一种用于半导体等离子体处理设备中的基板支撑组件的加热板，包括以可伸缩复用布局布置的多个可独立控制的平面加热器区域，以及用于独立地控制和供电平面加热器区域的电子装置。其中结合加热板的基板支撑组件包括静电夹持电极和温度控制的基板。制造加热板的方法包括将具有平面加热区，电源线，电源返回线和通孔的陶瓷或聚合物片接合在一起。

53. 发明授权

US08617411B2 Methods and apparatus for atomic layer etching 有权
标题翻译：原子层蚀刻的方法和装置
公开(公告)号：US08617411B2
公开(公告)日：2013-12-31
申请号：US13187437
申请日：2011-07-20
申请人： Harmeet Singh
发明人： Harmeet Singh
IPC分类号： H01L21/306
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32458 , H01J37/32633 , H01J37/32715 , H01J37/32899 , H01J2237/334 , H01L21/3065 , H01L21/76814
摘要： Substrate processing systems and methods for etching an atomic layer are disclosed. The methods and systems are configured to introducing a first gas into the chamber, the gas being an etchant gas suitable for etching the layer and allowing the first gas to be present in the chamber for a period of time sufficient to cause adsorption of at least some of the first gas into the layer. The first gas is substantially replaced in the chamber with an inert gas, and metastables are then generated from the inert gas to etch the layer with the metastables while substantially preventing the plasma charged species from etching the layer.
摘要翻译：公开了用于蚀刻原子层的衬底处理系统和方法。所述方法和系统被配置为将第一气体引入所述室中，所述气体是适于蚀刻所述层的蚀刻剂气体，并允许所述第一气体在所述室中存在足以引起至少一些吸附的时间的第一个气体进入层。第一种气体在室内基本上被惰性气体替代，然后从惰性气体产生亚稳态，以便在亚稳态下蚀刻该层，同时基本上防止等离子体带电物质蚀刻该层。

54. 发明授权

US08564724B2 Ghosting artifact reduction in temporal noise filtering 有权
标题翻译：时间噪声滤波中的鬼影神器减少
公开(公告)号：US08564724B2
公开(公告)日：2013-10-22
申请号：US12753897
申请日：2010-04-04
申请人： Wei Hong , Harmeet Singh
发明人： Wei Hong , Harmeet Singh
IPC分类号： H04N5/00
CPC分类号： H04N5/2176
摘要： A method of noise filtering of a digital video sequence to reduce ghosting artifacts, the method including computing motion values for pixels in a frame of the digital video sequence based on a reference frame, computing blending factors for the pixels based on the motion values, generating filtered output pixel values by applying the blending factors to corresponding pixel values in the reference frame and the frame, wherein selected filtered output pixel values are converged toward corresponding pixel values in the frame to reduce ghosting artifacts, and outputting the filtered frame.
摘要翻译：一种对数字视频序列进行噪声滤波以减少重影伪影的方法，所述方法包括基于参考帧计算数字视频序列的帧中的像素的运动值，基于运动值计算像素的混合因子，生成通过将混合因子应用于参考帧和帧中的相应像素值，滤波后的输出像素值，其中选择的滤波输出像素值朝向帧中的相应像素值收敛以减少重影伪像，并输出滤波后的帧。

55. 发明申请

US20120299252A1 VACUUM SEAL ARRANGEMENT USEFUL IN PLASMA PROCESSING CHAMBER 有权
标题翻译：真空密封装置适用于等离子体加工室
公开(公告)号：US20120299252A1
公开(公告)日：2012-11-29
申请号：US13113605
申请日：2011-05-23
申请人： Harmeet Singh
发明人： Harmeet Singh
IPC分类号： F16J15/02
CPC分类号： H01L21/67126 , F16J15/062
摘要： A vacuum seal arrangement comprising a one-piece elastomeric gasket having at least first and second O-rings interconnected by a planar web, a first part having a first planar sealing surface with a dove-tail groove therein holding the first O-ring and a square walled groove therein holding the second O-ring, the first part further including at least one passage in the first planar sealing surface surrounded by the first O-ring or second O-ring.
摘要翻译：一种真空密封装置，包括具有通过平面腹板互连的至少第一和第二O形环的单件式弹性垫圈，第一部分具有第一平面密封表面，其中带有第一O形环的鸽尾槽，其中保持第二O形环的方形壁槽，第一部分还包括由第一O形环或第二O形环包围的第一平面密封表面中的至少一个通道。

56. 发明申请

US20110092072A1 HEATING PLATE WITH PLANAR HEATING ZONES FOR SEMICONDUCTOR PROCESSING 有权
标题翻译：具有平面加热区域的加热板用于半导体加工
公开(公告)号：US20110092072A1
公开(公告)日：2011-04-21
申请号：US12582991
申请日：2009-10-21
申请人： Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
发明人： Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
IPC分类号： H01L21/3065 , H01C17/00 , H01C17/06 , B05C13/00 , H01L21/306 , C23C14/34
CPC分类号： H01L21/67103 , C23C14/50 , C23C14/541 , C23C16/4586 , C23C16/46 , C23C16/509 , H01J37/32091 , H01J37/32724 , H01J2237/327 , H01J2237/332 , H01J2237/3321 , H01J2237/3323 , H01J2237/334 , H01J2237/3342 , H01J2237/3343 , H01L21/02274 , H01L21/0262 , H01L21/28556 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H05B1/0233 , H05B3/00 , H05B3/26 , Y10T29/49083 , Y10T29/49099
摘要： A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.
摘要翻译：一种用于半导体等离子体处理设备中的基板支撑组件的加热板，包括以可伸缩复用布局布置的多个可独立控制的平面加热器区域，以及用于独立地控制和供电平面加热器区域的电子装置。其中结合加热板的基板支撑组件包括静电夹持电极和温度控制的基板。制造加热板的方法包括将具有平面加热区，电源线，电源返回线和通孔的陶瓷或聚合物片接合在一起。

57. 发明申请

US20100243164A1 REPLACEABLE UPPER CHAMBER SECTION OF PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工装置的可更换的上部室
公开(公告)号：US20100243164A1
公开(公告)日：2010-09-30
申请号：US12748141
申请日：2010-03-26
申请人： Leonard J. Sharpless , Harmeet Singh , Michael S. Kang
发明人： Leonard J. Sharpless , Harmeet Singh , Michael S. Kang
IPC分类号： H01L21/306 , C23F1/08 , C23C16/00
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32458 , H01J37/32467 , H01L21/67126 , H01L21/6719
摘要： A replaceable upper chamber section of a plasma reaction chamber in which semiconductor substrates can be processed comprises a monolithic metal cylinder having a conical inner surface which is widest at an upper end thereof, an upper flange extending horizontally outward away from the conical inner surface and a lower flange extending horizontally away from the conical inner surface. The cylinder includes an upper annular vacuum sealing surface adapted to seal against a dielectric window of the plasma chamber and a lower annular vacuum sealing surface adapted to seal against a bottom section of the plasma chamber. A thermal mass at an upper portion of the cylinder is defined by a portion of the cylinder between the conical inner surface and an outer surface extending vertically from the upper flange, the thermal mass being effective to provide azimuthal temperature uniformity of the conical inner surface. A thermal choke is located at a lower portion of the cylinder and is effective to minimize transfer of heat across the lower vacuum sealing surface. The thermal choke is defined by a thin metal section having a thickness of less than 0.25 inch and extending at least 25% of the length of the conical inner surface.
摘要翻译：可处理半导体衬底的等离子体反应室的可更换的上腔室部分包括具有在其上端最宽的圆锥形内表面的整体式金属圆筒，从锥形内表面向外水平向外延伸的上凸缘和下凸缘从锥形内表面水平地延伸。气缸包括适于密封等离子体室的电介质窗口的上环形真空密封表面和适于密封等离子体室底部的下环形真空密封表面。气缸上部的热质量由圆筒内部表面和从上凸缘垂直延伸的外表面之间的一部分限定，该热质量有效地提供圆锥形内表面的方位角温度均匀性。热扼流器位于气缸的下部，并且有效地最小化穿过下真空密封表面的热传递。热扼流圈由厚度小于0.25英寸且延伸至锥形内表面长度的至少25％的薄金属部分限定。

58. 发明授权

US07638004B1 Method for cleaning microwave applicator tube 有权
标题翻译：微波加热管清洗方法
公开(公告)号：US07638004B1
公开(公告)日：2009-12-29
申请号：US11445487
申请日：2006-05-31
申请人： Hong Shih , Harmeet Singh , Raphael Casaes , Duane Outka , Mohammad Kamarehi
发明人： Hong Shih , Harmeet Singh , Raphael Casaes , Duane Outka , Mohammad Kamarehi
IPC分类号： B08B3/04
CPC分类号： B08B3/08 , C11D3/3947 , C11D7/06 , C11D11/0041 , C11D11/0064 , G03F7/423 , G03F7/425 , G03F7/426
摘要： A method of cleaning a microwave plasma applicator tube as described herein includes preparing a microwave plasma applicator for cleaning. A general cleaning of the plasma applicator tube is performed using an organic solvent wash and an ultrapure water wash. Selective cleanings of the tube are performed to remove selected contaminants. Such cleanings include a third wash with an alkaline cleaning solution, a fourth wash with an acidic cleaning solution and another wash using an ammonia and peroxide solution. The tube is rinsed using a sonicating wash performed in ultrapure water followed by drying. Also, the coil can be cleaned using acidic wash solution.
摘要翻译：如本文所述的清洁微波等离子体施加管的方法包括制备用于清洁的微波等离子体施加器。使用有机溶剂洗涤和超纯水洗涤进行等离子体施加管的一般清洁。执行管的选择性清洁以去除所选择的污染物。这种清洁包括用碱性清洁溶液进行第三次洗涤，用酸性清洗溶液进行第四次洗涤，再用氨和过氧化物溶液进行洗涤。使用在超纯水中进行的超声清洗冲洗管，然后干燥。此外，线圈可以使用酸性洗涤溶液进行清洁。

59. 发明授权

US07402258B2 Methods of removing metal contaminants from a component for a plasma processing apparatus 有权
标题翻译：从等离子体处理装置的部件除去金属污染物的方法
公开(公告)号：US07402258B2
公开(公告)日：2008-07-22
申请号：US11591554
申请日：2006-11-02
申请人： Mark W. Kiehlbauch , John E. Daugherty , Harmeet Singh
发明人： Mark W. Kiehlbauch , John E. Daugherty , Harmeet Singh
IPC分类号： B44C1/22 , B08B9/00
CPC分类号： C03C23/0075 , C03C15/00 , C03C19/00 , C03C2204/08 , Y10S438/905 , Y10S438/906
摘要： Methods of removing metal contaminants from a component for a plasma processing apparatus are provided. The method includes cleaning a surface of the component with a cleaning liquid that includes at least one acid selected from oxalic acid, formic acid, acetic acid, citric acid, and mixtures thereof.
摘要翻译：提供了从用于等离子体处理装置的部件去除金属污染物的方法。该方法包括用包含至少一种选自草酸，甲酸，乙酸，柠檬酸及其混合物的酸的清洁液清洗组分的表面。

60. 发明申请

US20070034604A1 Method and apparatus for tuning a set of plasma processing steps 有权
标题翻译：用于调整一组等离子体处理步骤的方法和装置
公开(公告)号：US20070034604A1
公开(公告)日：2007-02-15
申请号：US11582730
申请日：2006-10-17
申请人： Vahid Vahedi , John Daugherty , Harmeet Singh , Anthony Chen
发明人： Vahid Vahedi , John Daugherty , Harmeet Singh , Anthony Chen
IPC分类号： C23F1/00 , H01L21/306 , H01L21/302
CPC分类号： H01L21/32136 , C03C15/00 , C03C23/006 , H01J37/32623 , H01J37/32642
摘要： In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.
摘要翻译：在等离子体处理系统中，公开了一组等离子体处理步骤的调谐方法。该方法包括在等离子体处理系统的等离子体反应器中击打包含中性粒子和离子的第一等离子体。该方法还包括在第一蚀刻步骤中蚀刻在衬底上的一组层; 将可移动均匀环定位在基底周围，其中均匀环的底表面与基底的顶表面大致相同的高度; 并且在等离子体处理系统的等离子体反应器中击打基本上由中性体组成的第二等离子体。该方法还包括在第二蚀刻步骤中蚀刻衬底上的这组层; 并且其中第一步骤中的蚀刻和第二步骤中的蚀刻基本上是均匀的。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式