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51. 发明授权

US07608381B2 Polymer compound, positive resist composition and process for forming resist pattern 有权
标题翻译：高分子化合物，正性抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07608381B2
公开(公告)日：2009-10-27
申请号：US11570761
申请日：2005-06-10
申请人： Yohei Kinoshita , Takeshi Iwai
发明人： Yohei Kinoshita , Takeshi Iwai
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： C08F220/28 , C08F220/26 , G03F7/0397 , Y10S430/111 , Y10S430/115
摘要： The positive resist composition of the present invention is a polymer compound comprising at least one constituent unit (a1) selected from the group consisting of constituent units represented by the following general formulas (1) and (1)′, a constituent unit (a2) derived from an (α-lower alkyl)acrylate ester having a lactone-containing monocycle or a polycyclic group, and a constituent unit (a3) which is a constituent unit other than the constituent unit (a1) and the constituent unit (a2) and is derived from an (α-lower alkyl)acrylate ester which has an aliphatic cyclic group-containing non-acid dissociable dissolution inhibiting group and does not have a polar group: wherein R represents a hydrogen atom, a fluorine atom, a lower alkyl group having 20 or less carbon atoms, or a fluorinated lower alkyl group having 20 or less carbon atoms, R1 represents at most 20-membered cyclic group which may have a substituent, n represents 0 or an integer of 1 to 5, and m represents 0 or 1.
摘要翻译：本发明的正型抗蚀剂组合物是含有选自由以下通式（1）和（1）'表示的结构单元组成的组中的至少一种构成单元（a1），构成单元（a2）衍生自具有含内酯的单环或多环的（α-低级烷基）丙烯酸酯和作为构成单元（a1）和构成单元（a2）以外的构成单元的构成单元（a3），以及衍生自具有脂族环状基团的非酸解离溶解抑制基团并且不具有极性基团的（α-低级烷基）丙烯酸酯：其中R表示氢原子，氟原子，低级烷基碳原子数为20以下的氟代低级烷基或碳原子数为20以下的氟代低级烷基，R1表示可以具有取代基的至多20元环状基团，n表示0或1〜5的整数，m表示0 或1 。

52. 发明授权

US07541138B2 Resist composition 有权
公开(公告)号：US07541138B2
公开(公告)日：2009-06-02
申请号：US11621895
申请日：2007-01-10
申请人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
发明人： Taku Hirayama , Hideo Hada , Satoshi Fujimura , Takeshi Iwai , Mitsuru Sato , Ryoichi Takasu , Toshikazu Tachikawa , Jun Iwashita , Keita Ishiduka , Tomotaka Yamada , Toshikazu Takayama , Masaaki Yoshida
IPC分类号： G03F7/30
CPC分类号： G03F7/70616 , G03F7/0382 , G03F7/0397 , G03F7/70341 , Y10S430/106 , Y10S430/111
摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

53. 发明申请

US20090042132A1 RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN 有权
标题翻译：用于浸入光刻的耐蚀组合物和形成耐蚀图案的方法
公开(公告)号：US20090042132A1
公开(公告)日：2009-02-12
申请号：US12278376
申请日：2007-02-05
申请人： Makiko Irie , Takeshi Iwai
发明人： Makiko Irie , Takeshi Iwai
IPC分类号： G03C1/675 , G03C1/73 , G03F7/20
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/2041
摘要： A resist composition for immersion lithography of the present invention includes a resin component (A) which exhibits changed alkali solubility under the action of acid; and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) includes a resin (A1) containing a fluorine atom and no acid-dissociable group, and a resin (A2) containing a structural unit (a′) derived from an acrylic acid and no fluorine atom.
摘要翻译：本发明的浸渍光刻用抗蚀剂组合物包括在酸作用下表现出碱溶性变化的树脂成分（A）以及在曝光时产生酸的酸发生剂成分（B），其中，所述树脂成分（A）含有含有氟原子且不具有酸解离性基团的树脂（A1）和含有结构单元（a）的树脂（A2） '）衍生自丙烯酸而不是氟原子。

54. 发明授权

US07316889B2 Positive type resist composition and resist pattern formation method using same 有权
公开(公告)号：US07316889B2
公开(公告)日：2008-01-08
申请号：US11347423
申请日：2006-02-02
申请人： Takeshi Iwai , Naotaka Kubota , Satoshi Fujimura , Miwa Miyairi , Hideo Hada
发明人： Takeshi Iwai , Naotaka Kubota , Satoshi Fujimura , Miwa Miyairi , Hideo Hada
IPC分类号： G03F7/004
CPC分类号： G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： There is provided a positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, whereinthe component (A) comprises both a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester. According to such a resist composition, a resist pattern can be formed which displays little surface roughness and line edge roughness on etching, and also offers excellent resolution and a wide depth of focus range.

55. 发明申请

US20070284624A1 Optical semiconductor device with sensitivity improved 审中-公开
标题翻译：具有灵敏度提高的光学半导体器件
公开(公告)号：US20070284624A1
公开(公告)日：2007-12-13
申请号：US11802967
申请日：2007-05-29
申请人： Takeshi Iwai
发明人： Takeshi Iwai
IPC分类号： H01L29/76 , H01L29/745
CPC分类号： H01L27/1443 , H01L31/101 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An optical semiconductor device containing a photodiode, includes a first semiconductor layer of a first conductive type; and a channel layer of a second conductive type formed from a surface portion of the first semiconductor layer in a light receiving region. The channel layer and the first semiconductor layer in the light receiving region form a p-n junction region.
摘要翻译：包含光电二极管的光学半导体器件包括第一导电类型的第一半导体层; 以及在受光区域由第一半导体层的表面部分形成的第二导电类型的沟道层。光接收区中的沟道层和第一半导体层形成p-n结区域。

56. 发明授权

US07276575B2 Process for refining crude resin for resist 有权
标题翻译：精制粗树脂抗蚀剂的方法
公开(公告)号：US07276575B2
公开(公告)日：2007-10-02
申请号：US10544324
申请日：2004-01-29
申请人： Hideo Hada , Takeshi Iwai , Miwa Miyairi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida
发明人： Hideo Hada , Takeshi Iwai , Miwa Miyairi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida
IPC分类号： C08F6/00
CPC分类号： G03F7/0397 , C08F6/06 , C08F6/12
摘要： A process for refining a crude resin for a resist which is capable of effectively removing by-products such as polymers and oligomers contained within the crude resin. The refining process for the crude resin of resist resin (A) used in a photoresist composition includes at least the resist resin (A) and an acid generator (B) dissolved in a first organic solvent (C1), such that if the concentration of the component (A) in the photoresist composition is labeled X, and the crude resin concentration of the component (A) in a crude resin solution including the crude resin of the component (A) dissolved in a second organic solvent (C2) is labeled Y, then (i) the crude resin solution is prepared so that Y is smaller than X, and (ii) the crude resin solution is subsequently filtered.
摘要翻译：用于精制抗蚀剂粗树脂的方法，其能够有效地除去粗树脂中所含的聚合物和低聚物等副产物。用于光致抗蚀剂组合物中的抗蚀剂树脂（A）的粗树脂的精制方法至少包含溶解在第一有机溶剂（C 1）中的抗蚀剂树脂（A）和酸产生剂（B），使得如果浓度在光致抗蚀剂组合物中的组分（A）的标记为X，并且包含溶解在第二有机溶剂（C 2）中的组分（A）的粗树脂的粗树脂溶液中的组分（A）的粗树脂浓度被标记为Y，然后（i）制备粗制树脂溶液使得Y小于X，和（ii）随后过滤粗树脂溶液。

57. 发明授权

US07183368B2 Negative-working photoresist composition 失效
标题翻译：负性光刻胶组合物
公开(公告)号：US07183368B2
公开(公告)日：2007-02-27
申请号：US10982843
申请日：2004-11-08
申请人： Hideo Hada , Takeshi Iwai , Satoshi Fujimura
发明人： Hideo Hada , Takeshi Iwai , Satoshi Fujimura
IPC分类号： C08F120/06 , C08F122/02 , C08F122/10 , C08F120/18 , C08F20/06
CPC分类号： G03F7/0382 , Y10S430/106 , Y10S430/111
摘要： Disclosed is a chemical-amplification negative-working photoresist composition used for photolithographic patterning in the manufacture of semiconductor devices suitable for patterning light-exposure to ArF excimer laser beams and capable of giving a high-resolution patterned resist layer free from swelling and having an orthogonal cross sectional profile by alkali-development. The characteristic ingredient of the composition is the resinous compound which has two types of functional groups, e.g., hydroxyalkyl groups and carboxyl or carboxylate ester groups, capable of reacting each with the other to form intramolecular and/or intermolecular ester linkages in the presence of an acid released from the radiation-sensitive acid generating agent to cause insolubilization of the resinous ingredient in an aqueous alkaline developer solution.
摘要翻译：公开了用于光刻图案化的化学放大负性光致抗蚀剂组合物，用于制造适于图案化曝光于ArF准分子激光束的半导体器件，并且能够提供没有溶胀的高分辨率图案化抗蚀剂层并且具有正交通过碱显影的截面剖面。组合物的特征成分是具有两种官能团的树脂化合物，例如羟基烷基和羧基或羧酸酯基团，其能够在存在下形成分子间和/或分子间酯键，以形成分子内和/或分子间酯键从辐射敏感的酸产生剂中释放的酸引起树脂成分在碱性显影剂水溶液中的不溶化。

58. 发明授权

US07074543B2 Positive resist composition and method of forming resist pattern from the same 有权
标题翻译：正型抗蚀剂组合物及其形成抗蚀剂图案的方法
公开(公告)号：US07074543B2
公开(公告)日：2006-07-11
申请号：US10467130
申请日：2002-11-29
申请人： Takeshi Iwai , Naotaka Kubota , Satoshi Fujimura , Miwa Miyairi , Hideo Hada
发明人： Takeshi Iwai , Naotaka Kubota , Satoshi Fujimura , Miwa Miyairi , Hideo Hada
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： There is provided a positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, wherein the component (A) comprises both a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester. According to such a resist composition, a resist pattern can be formed which displays little surface roughness and line edge roughness on etching, and also offers excellent resolution and a wide depth of focus range.
摘要翻译：提供一种正型树脂组合物，其包含（A）树脂组分，其在主链内包含衍生自（甲基）丙烯酸酯的结构单元，并且在酯侧链部分上并入含有多环基团的酸解离的溶解抑制基团（B）在暴露时产生酸的酸产生剂组分和（C）有机溶剂，其中组分（A）包含衍生自甲基丙烯酸酯的结构单元酯和衍生自丙烯酸酯的结构单元。根据这样的抗蚀剂组合物，可以形成抗蚀剂图案，其在蚀刻时显示出很小的表面粗糙度和线边缘粗糙度，并且还提供优异的分辨率和宽的焦深范围。

59. 发明申请

US20060135745A1 Process for refining crude resin for resist 有权
标题翻译：精制粗树脂抗蚀剂的方法
公开(公告)号：US20060135745A1
公开(公告)日：2006-06-22
申请号：US10544324
申请日：2004-01-29
申请人： Hideo Hada , Takeshi Iwai , Miwa Miyairi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida
发明人： Hideo Hada , Takeshi Iwai , Miwa Miyairi , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida
IPC分类号： C08F6/00
CPC分类号： G03F7/0397 , C08F6/06 , C08F6/12
摘要： A process for refining a crude resin for a resist is provided, which is capable of effectively removing by-products such as polymers and oligomers contained within the crude resin. The process provides a refining process for the crude resin of a resist resin (A) used in a photoresist composition comprising at least the resist resin (A) and an acide generator (B) dissolved in a first organic solvent (C1), wherein if the concentration of the component (A) in the photoresist composition is labeled X, and the crude resin concentration of the component (A) in a crude resin solution comprising the crude resin of the component (A) dissolved in a second organic solvent (C2) is labeled Y, then (i) the crude resin solution is prepared so that Y is smaller than X, and (ii) the crude resin solution is subsequently filtered.
摘要翻译：提供了用于精制抗蚀剂粗树脂的方法，其能够有效地除去粗树脂中所含的聚合物和低聚物等副产物。该方法为至少包含溶解在第一有机溶剂（C1）中的抗蚀剂树脂（A）和酰化发生剂（B））的光致抗蚀剂组合物中用于抗蚀剂树脂（A）的粗树脂提供精制方法，其中如果将光致抗蚀剂组合物中组分（A）的浓度标记为X，将包含溶于第二有机溶剂（C2）中的组分（A）的粗树脂的粗树脂溶液中的组分（A）的粗树脂浓度）标记为Y，然后（i）制备粗树脂溶液使得Y小于X，和（ii）随后过滤粗树脂溶液。

60. 发明申请

US20060134552A1 Positive type resist composition and resist pattern formation method using same 有权
公开(公告)号：US20060134552A1
公开(公告)日：2006-06-22
申请号：US11347102
申请日：2006-02-02
申请人： Takeshi Iwai , Naotaka Kubota , Satoshi Fujimura , Miwa Miyairi , Hideo Hada
发明人： Takeshi Iwai , Naotaka Kubota , Satoshi Fujimura , Miwa Miyairi , Hideo Hada
IPC分类号： G03C1/76
CPC分类号： G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： There is provided a positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, wherein the component (A) comprises both a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester. According to such a resist composition, a resist pattern can be formed which displays little surface roughness and line edge roughness on etching, and also offers excellent resolution and a wide depth of focus range.

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