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51. 发明授权

US08158332B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08158332B2
公开(公告)日：2012-04-17
申请号：US12689830
申请日：2010-01-19
申请人： Kentaro Matsunaga , Tomoya Oori , Eishi Shiobara
发明人： Kentaro Matsunaga , Tomoya Oori , Eishi Shiobara
IPC分类号： G03C5/00
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L27/11517 , H01L27/11521
摘要： A method of fabricating a semiconductor device according to an embodiment includes: forming a first resist pattern made of a first resist material on a workpiece material; irradiating an energy beam onto the first resist pattern, the energy beam exposing the first resist material to light; performing a treatment for improving resistance the first resist pattern after irradiation of the energy beam; forming a coating film on the workpiece material so as to cover the first resist pattern; and forming a second resist pattern made of a second resist material on the coating film after the treatment.
摘要翻译：根据实施例的制造半导体器件的方法包括：在工件材料上形成由第一抗蚀剂材料制成的第一抗蚀剂图案; 将能量束照射到所述第一抗蚀剂图案上，所述能量束将所述第一抗蚀剂材料暴露于光; 进行能量束照射后的第一抗蚀剂图案的改善电阻的处理; 在所述工件材料上形成涂覆膜以覆盖所述第一抗蚀剂图案; 以及在处理后在涂膜上形成由第二抗蚀剂材料制成的第二抗蚀剂图案。

52. 发明申请

US20110034029A1 PATTERN FORMATION METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：用于制造半导体器件的图案形成方法和方法
公开(公告)号：US20110034029A1
公开(公告)日：2011-02-10
申请号：US12849599
申请日：2010-08-03
申请人： Kentaro MATSUNAGA , Tomoya Oori , Eishi Shiobara , Yukiko Sato , Yoshihisa Kawamura
发明人： Kentaro MATSUNAGA , Tomoya Oori , Eishi Shiobara , Yukiko Sato , Yoshihisa Kawamura
IPC分类号： H01L21/306
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149
摘要： According to one embodiment, a pattern formation method is disclosed. The method includes forming a plurality of regions on a foundation and the plurality of the regions correspond to different pattern sizes. The method includes separating each of a plurality of block copolymers from another one of the plurality of the block copolymers and segregating the each of the plurality of the block copolymers into a corresponding one of the regions. The method includes performing a phase separation of the each of the block copolymers of each of the regions. The method includes selectively removing a designated phase of each of the phase-separated block copolymers to form a pattern of the each of the block copolymers and the pattern has a different pattern size for the each of the regions.
摘要翻译：根据一个实施例，公开了图案形成方法。该方法包括在基础上形成多个区域，并且多个区域对应于不同的图案尺寸。该方法包括从多个嵌段共聚物中的另一个嵌段共聚物中分离多个嵌段共聚物，并将多个嵌段共聚物中的每一个分离成相应的一个区域。该方法包括进行每个区域的每个嵌段共聚物的相分离。该方法包括选择性地除去每个相分离的嵌段共聚物的指定相以形成每个嵌段共聚物的图案，并且该图案对于每个区域具有不同的图案尺寸。

53. 发明授权

US07851139B2 Pattern forming method 失效
标题翻译：图案形成方法
公开(公告)号：US07851139B2
公开(公告)日：2010-12-14
申请号：US12257221
申请日：2008-10-23
申请人： Eishi Shiobara , Takehiro Kondoh
发明人： Eishi Shiobara , Takehiro Kondoh
IPC分类号： G03F7/40
CPC分类号： G03F7/40
摘要： A pattern forming method according to an embodiment of the present invention includes forming a resist layer on a semiconductor substrate, selectively exposing the resist layer, developing the selectively exposed resist layer, decomposing photosensitizer in the resist layer after developing the resist layer, removing the photosensitizer or acid generated from the decomposed photosensitizer, applying a shrink material on the developed resist layer after removing the photosensitizer or the acid generated from the decomposed photosensitizer, performing a heating process for the resist layer on which the shrink material is applied, and removing a part of the heat-processed shrink material.
摘要翻译：根据本发明的实施例的图案形成方法包括在半导体衬底上形成抗蚀剂层，选择性地暴露抗蚀剂层，显影选择性曝光的抗蚀剂层，在形成抗蚀剂层之后分解抗蚀剂层中的光敏剂，除去光敏剂或由分解的光敏剂产生的酸，在除去光敏剂或从分解的光敏剂产生的酸之后，在显影的抗蚀剂层上施加收缩材料，对其上施加收缩材料的抗蚀剂层进行加热处理，的热处理收缩材料。

54. 发明申请

US20100183982A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100183982A1
公开(公告)日：2010-07-22
申请号：US12689830
申请日：2010-01-19
申请人： Kentaro MATSUNAGA , Tomoya Oori , Eishi Shiobara
发明人： Kentaro MATSUNAGA , Tomoya Oori , Eishi Shiobara
IPC分类号： G03F7/20
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L27/11517 , H01L27/11521
摘要： A method of fabricating a semiconductor device according to an embodiment includes: forming a first resist pattern made of a first resist material on a workpiece material; irradiating an energy beam onto the first resist pattern, the energy beam exposing the first resist material to light; performing a treatment for improving resistance the first resist pattern after irradiation of the energy beam; forming a coating film on the workpiece material so as to cover the first resist pattern; and forming a second resist pattern made of a second resist material on the coating film after the treatment.
摘要翻译：根据实施例的制造半导体器件的方法包括：在工件材料上形成由第一抗蚀剂材料制成的第一抗蚀剂图案; 将能量束照射到所述第一抗蚀剂图案上，所述能量束将所述第一抗蚀剂材料暴露于光; 进行能量束照射后的第一抗蚀剂图案的改善电阻的处理; 在所述工件材料上形成涂覆膜以覆盖所述第一抗蚀剂图案; 以及在处理后在涂膜上形成由第二抗蚀剂材料制成的第二抗蚀剂图案。

55. 发明申请

US20080003837A1 Substrate processing method and semiconductor device manufacturing method carried out in a lithographic process 审中-公开
标题翻译：基板处理方法和在光刻工艺中进行的半导体器件制造方法
公开(公告)号：US20080003837A1
公开(公告)日：2008-01-03
申请号：US11812015
申请日：2007-06-14
申请人： Kei Hayasaki , Eishi Shiobara
发明人： Kei Hayasaki , Eishi Shiobara
IPC分类号： H01L21/469 , G03C5/00
CPC分类号： H01L21/67109 , G03F7/091 , G03F7/168
摘要： In a substrate processing method, a substrate to be processed coated with a film containing a solvent is heated in a single wafer processing manner. The substrate to be processed is heated for a predetermined time by arranging the substrate to be processed in the proximity of a heated heating plate while passing a gas along a top surface of the substrate to be processed at a predetermined flow rate. The substrate to be processed is cooled to a temperature lower than a sublimation temperature of a substance contained in the film containing the solvent while passing a gas heated to a temperature equal to or higher than the sublimation temperature of the substance contained in the film containing the solvent along the top surface of the substrate to be processed.
摘要翻译：在基板处理方法中，以单晶片处理方式加热涂覆有含有溶剂的膜的被处理基板。将待处理的基板通过在被加热的加热板附近以预定的流速沿着待处理的基板的顶表面通过气体而被加热待加热的基板。待加工的基材被冷却至低于包含在含有溶剂的膜的物质的升华温度的温度，同时通过加热到等于或高于包含在含有该溶剂的膜的物质的升华温度的温度的气体溶剂沿待处理基材的顶表面。

56. 发明授权

US08883405B2 Method for forming pattern 有权
标题翻译：形成图案的方法
公开(公告)号：US08883405B2
公开(公告)日：2014-11-11
申请号：US13595244
申请日：2012-08-27
申请人： Eishi Shiobara
发明人： Eishi Shiobara
IPC分类号： G03F7/20
CPC分类号： G03F7/0046 , G03F7/0045 , G03F7/095 , G03F7/16
摘要： According to one embodiment, a method is disclosed for forming a pattern. The method can include forming a resist film above a subject. The resist film includes a photosensitive material. The resist film has a concentration profile having a concentration of the photosensitive material being higher on a side of a bottom of the resist film than on a side of a surface of the resist film. A portion of the resist film has a maximum concentration of the photosensitive material existing closer to the side of the bottom than a center of the resist film in a thickness direction. The method can include irradiating the resist film with a light from the side of the surface. The method can include developing the resist film after the resist film being irradiated with the light.
摘要翻译：根据一个实施例，公开了一种用于形成图案的方法。该方法可以包括在受试者上方形成抗蚀剂膜。抗蚀剂膜包括感光材料。抗蚀剂膜具有在抗蚀剂膜的底部的一侧的感光材料的浓度高于抗蚀剂膜的表面侧的浓度分布。抗蚀剂膜的一部分在厚度方向上具有比抗蚀剂膜的中心更靠近底部的感光材料的最大浓度。该方法可以包括用来自表面一侧的光照射抗蚀剂膜。该方法可以包括在抗蚀剂膜被光照射之后显影抗蚀剂膜。

57. 发明授权

US08329385B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08329385B2
公开(公告)日：2012-12-11
申请号：US12481919
申请日：2009-06-10
申请人： Eishi Shiobara , Keisuke Kikutani , Kazuyuki Yahiro , Kentaro Matsunaga , Tomoya Oori
发明人： Eishi Shiobara , Keisuke Kikutani , Kazuyuki Yahiro , Kentaro Matsunaga , Tomoya Oori
IPC分类号： G03F7/26
CPC分类号： G03F7/095 , G03F7/091 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L21/32139
摘要： A method of manufacturing a semiconductor device according to one embodiment, includes: forming a first mask material film on a workpiece film formed on a semiconductor substrate; forming a resist pattern on the first mask material film; forming a second mask material film having a desired film thickness on the first mask material film so as to cover the resist pattern; carrying out etchback of the second mask material film so as to expose the resist pattern and the first mask material film; processing the resist pattern and the first mask material film simultaneously which are exposed, while leaving the second mask material film of which etchback is carried out; and processing the workpiece film which exposes under the first mask material film.
摘要翻译：根据一个实施例的制造半导体器件的方法包括：在形成在半导体衬底上的工件膜上形成第一掩模材料膜; 在第一掩模材料膜上形成抗蚀剂图案; 在所述第一掩模材料膜上形成具有所需膜厚度的第二掩模材料膜以覆盖所述抗蚀剂图案; 对所述第二掩模材料膜进行回蚀以暴露所述抗蚀图案和所述第一掩模材料膜; 同时处理曝光的抗蚀剂图案和第一掩模材料膜，同时留下进行回蚀的第二掩模材料膜; 并处理在第一掩模材料膜下露出的工件膜。

58. 发明授权

US08097398B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US08097398B2
公开(公告)日：2012-01-17
申请号：US12477744
申请日：2009-06-03
申请人： Takehiro Kondoh , Eishi Shiobara
发明人： Takehiro Kondoh , Eishi Shiobara
IPC分类号： G03F7/00 , G03F7/004 , G03F7/26 , G03F7/40
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/0337 , H01L21/0338 , Y10S430/106 , Y10S430/114
摘要： In the method for manufacturing a semiconductor device, a resist film is formed on a substrate and is processed to be provided with openings to form a first resist pattern. Additive-containing layers containing an additive that changes a state of the resist film to a soluble state for a developer are formed so as to cover the first resist pattern. A first resin film having a nature of changing to a soluble state for the developer by containing the additive is formed in the openings of the first resist pattern. The additive is diffused into the first resist pattern and the first resin film to form first and second additive-diffusing portions which can be solved in the developer. The first and second additive-diffusing portions are removed by the developer to form second resist pattern made of remaining portions in the first resist pattern and the first resin film.
摘要翻译：在制造半导体器件的方法中，在衬底上形成抗蚀剂膜，并且加工成具有开口以形成第一抗蚀剂图案。形成含有将抗蚀剂膜的状态改变为显影剂的可溶性状态的添加剂的含有添加剂层，以覆盖第一抗蚀剂图案。在第一抗蚀剂图案的开口中形成具有通过含有添加剂而改变为显影剂的可溶性状态的第一树脂膜。添加剂扩散到第一抗蚀剂图案和第一树脂膜中以形成可以溶解在显影剂中的第一和第二添加剂扩散部分。通过显影剂去除第一和第二添加剂扩散部分，以形成由第一抗蚀剂图案和第一树脂膜中的剩余部分制成的第二抗蚀剂图案。

59. 发明授权

US07662542B2 Pattern forming method and semiconductor device manufacturing method 失效
标题翻译：图案形成方法和半导体器件制造方法
公开(公告)号：US07662542B2
公开(公告)日：2010-02-16
申请号：US11342048
申请日：2006-01-30
申请人： Eishi Shiobara , Takehiro Kondoh , Yuji Kobayashi , Koutarou Sho
发明人： Eishi Shiobara , Takehiro Kondoh , Yuji Kobayashi , Koutarou Sho
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/0276 , H01L21/3088 , Y10S430/151
摘要： A pattern forming method includes the following steps. A resist pattern is formed on a to-be-processed film. A mask pattern including the resist pattern and a resin film formed on a surface of the resist pattern is formed. Slimming of the mask pattern is executed.
摘要翻译：图案形成方法包括以下步骤。在被处理膜上形成抗蚀剂图案。形成包括形成在抗蚀图案的表面上的抗蚀剂图案和树脂膜的掩模图案。执行掩模图案的减肥。

60. 发明申请

US20080073286A1 Waste liquid processing method in semiconductor manufacturing process and substrate processing apparatus 审中-公开
标题翻译：半导体制造工艺中的废液处理方法及基板处理装置
公开(公告)号：US20080073286A1
公开(公告)日：2008-03-27
申请号：US11902452
申请日：2007-09-21
申请人： Eishi Shiobara
发明人： Eishi Shiobara
IPC分类号： B05C11/10 , C02F1/00
CPC分类号： G05D11/133 , C02F1/008 , C02F2103/346
摘要： This invention discloses a waste liquid processing method in a semiconductor manufacturing process. The waste liquids of a plurality of chemical solutions are mixed. The mixing ratio of the plurality of solutions in a waste liquid mixture generated by mixing is obtained. It is determined whether the obtained mixing ratio satisfies or is predicted not to satisfy a predetermined condition. If the mixing ratio does not satisfy or is predicted not to satisfy the condition, the waste liquid mixture is diluted with a diluent to satisfy the condition.
摘要翻译：本发明公开了一种半导体制造工序中的废液处理方法。将多种化学溶液的废液混合。获得通过混合产生的废液混合物中的多种溶液的混合比。确定所获得的混合比是否满足或被预测为不满足预定条件。如果混合比不满足或预测不满足条件，则用稀释剂稀释废液混合物以满足条件。

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