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    • 51. 发明授权
    • Apparatus for diagnosing failure of hydraulic pump for work machine
    • 用于诊断作业机械液压泵故障的装置
    • US6055851A
    • 2000-05-02
    • US51440
    • 1998-09-03
    • Yasuo TanakaMasami OchiaiTakashi YagyuAkira HashimotoYoshinori FurunoYutaka WatanabeYukihiko Sugiyama
    • Yasuo TanakaMasami OchiaiTakashi YagyuAkira HashimotoYoshinori FurunoYutaka WatanabeYukihiko Sugiyama
    • E02F9/22E02F9/26F04B49/06F04B51/00F15B20/00G01M3/00
    • F15B20/004E02F9/2235E02F9/226E02F9/2282E02F9/2292E02F9/2296E02F9/26F04B49/065F04B51/00F04B2205/063
    • This invention relates to a fault diagnosis system for hydraulic pumps in a work vehicle, which is economical and permits sure identification of one or more trouble-developed ones of the hydraulic pumps.Pressure sensors 61-64 are arranged on pressurized fluid lines 30,40, which extend to a tank T from points immediately out of center bypasses of flow control valves 21,231-234,451-454,26 communicated to hydraulic pumps 1-6. Solenoid-operated directional control valves 51-56 are interposed in input circuits of individual regulators 11-16 so that, upon excitation, a pressure of a pilot pump 7 is introduced into the regulators 11-16. When all the flow control valves are brought into neutral positions thereof and a determination is instructed through a switch 80, one of the solenoid-operated directional control valves is excited by a signal from a processor 70 so that pressurized fluid is delivered at a maximum flow rate from the corresponding hydraulic pump. A detection value of the corresponding pressure sensor at this time is translated into a flow rate, which is then stored. These procedures are performed with respect to the individual hydraulic pumps successively. Based on a flow rate obtained in every determination, a fault diagnosis of the corresponding particular hydraulic pump is performed.
    • PCT No.PCT / JP97 / 02771 Sec。 371日期:1998年9月3日 102(e)1998年9月3日PCT PCT 1997年8月7日提交PCT公布。 公开号WO98 / 06946 日期:1998年02月19日本发明涉及一种用于工作车辆中的液压泵的故障诊断系统,其经济并且可以确定地识别一个或多个故障开发的液压泵。 压力传感器61-64设置在加压流体管线30,40上,该加压流体管线30,40从紧接着流向控制阀21,231-234,451-454,26的中心旁路的点延伸到罐体T,该流量控制阀被传送到液压泵1-6。 电磁式方向控制阀51-56插入到单独的调节器11-16的输入电路中,使得在激励时,先导泵7的压力被引入到调节器11-16中。 当所有流量控制阀进入中间位置并通过开关80指示确定时,电磁式方向控制阀之一被来自处理器70的信号激励,使得加压流体以最大流量 速率来自相应的液压泵。 此时的相应的压力传感器的检测值被转换成流量,然后存储。 这些步骤相对于各个液压泵相继进行。 根据每个确定中获得的流量,执行对应的特定液压泵的故障诊断。
    • 52. 发明授权
    • Polypropylene composition and uses thereof
    • 聚丙烯组合物及其用途
    • US5998039A
    • 1999-12-07
    • US890360
    • 1997-07-09
    • Tatsuya TanizakiMikio HashimotoMasahiro SugiToshiyuki TsutsuiYasuo TanakaMamoru Kagami
    • Tatsuya TanizakiMikio HashimotoMasahiro SugiToshiyuki TsutsuiYasuo TanakaMamoru Kagami
    • C08F210/06C08L23/10C08L23/12C08L23/14B32B27/32
    • C08L23/12C08L23/10C08L23/14C08L23/142C08F210/06C08L2205/02Y10S428/91Y10T428/1328Y10T428/31909Y10T428/31913
    • Disclosed is a polypropylene composition comprising (A) polypropylene and (B) a specific propylene-1-butene random copolymer in a specific amount ratio. The propylene-1-butene random copolymer (B) is characterized in that: (1) the copolymer contains 50 to 95% by mol of constituent units from propylene and 50 to 5% by mol of constituent units from 1-butene, (2) the intrinsic viscosity, as measured in decahydronaphthalene at 135.degree. C., is in the range of 0.1 to 12 dl/g, (3) the molecular weight distribution (Mw/Mn), as determined measured by GPC, is not more than 3, and (4) the parameter B value indicating randomness of the copolymerized monomer sequence distribution is in the range of 1.0 to 1.5. Also disclosed is a polypropylene composite film comprising (I) a crystalline polypropylene layer and (II) a layer formed from the polypropylene composition, which is laminated on at least one surface of the crystalline polypropylene layer (I). The polypropylene composition is excellent in heat resistance and low-temperature heat-sealing properties as well as in flexibility and impact resistance. The polypropylene composite film is excellent in not only heat-sealing properties, particularly low-temperature heat-sealing properties, but also transparency, scratch resistance and blocking resistance.
    • 公开了包含(A)聚丙烯和(B)特定量比的特定丙烯-1-丁烯无规共聚物的聚丙烯组合物。 丙烯-1-丁烯无规共聚物(B)的特征在于:(1)共聚物含有50〜95摩尔%的丙烯构成单元和50〜5摩尔%的来自1-丁烯的构成单元,(2 ),在135℃下在十氢化萘中测得的特性粘度在0.1〜12dl / g的范围内,(3)通过GPC测定的分子量分布(Mw / Mn)不大于 3,(4)表示共聚单体序列分布的随机性的参数B值在1.0〜1.5的范围内。 还公开了一种聚丙烯复合膜,其包含(I)结晶聚丙烯层和(II)由聚丙烯组合物形成的层,其层压在结晶聚丙烯层(I)的至少一个表面上。 聚丙烯组合物的耐热性和低温热封性以及柔软性和耐冲击性优异。 聚丙烯复合膜不仅具有优异的热封性,特别是低温热封性,而且透明性,耐擦伤性和耐粘连性优异。
    • 54. 发明授权
    • Thin film transistor substrate, manufacturing method thereof, liquid
crystal display panel and liquid crystal display equipment
    • 薄膜晶体管基板,其制造方法,液晶显示面板和液晶显示设备
    • US5889573A
    • 1999-03-30
    • US928719
    • 1997-09-12
    • Hideaki YamamotoHaruo MatsumaruYasuo TanakaKen TsutsuiToshihisa TsukadaKazuo ShirahashiAkira SasanoYuka Matsukawa
    • Hideaki YamamotoHaruo MatsumaruYasuo TanakaKen TsutsuiToshihisa TsukadaKazuo ShirahashiAkira SasanoYuka Matsukawa
    • G02F1/1343G02F1/1345G02F1/136G02F1/1362G02F1/1368G09F9/30G09G3/36H01L21/3205H01L21/336H01L27/12H01L29/49H01L29/78H01L29/786H01L29/04
    • G02F1/136286G02F1/1345G02F1/136213H01L29/4908H01L2924/0002
    • The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof.In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines.The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).
    • 本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板,其制造方法和阳极氧化方法,使用TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示设备, 更具体地,涉及能够改善其特性的结构和制造方法。 在本发明中,Cr或Ta用于栅极端子,铝或主要由铝组成的金属用于从其延伸的栅极总线,栅电极和薄膜电容(附加电容,存储电容)和阳极氧化膜 由金属构成并且没有缺陷用于栅极绝缘体,薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。 在更优选的结构中,阳极氧化膜用于所有栅极绝缘体,用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。 本发明还涉及在铝图案上选择性地形成阳极氧化膜的方法。 也就是说,在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下,在本发明中,在选择性氧化掩模和铝图案之间形成的角度(θ)为: θ= 110-20T(T:正型光致抗蚀剂的膜厚度)。