会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 51. 发明授权
    • Preparation of copolymers
    • 共聚物的制备
    • US06677419B1
    • 2004-01-13
    • US10293740
    • 2002-11-13
    • Phillip J. BrockEiichi KobayashiIsao NishimuraYukio NishimuraThomas I. WallowMasafumi Yamamoto
    • Phillip J. BrockEiichi KobayashiIsao NishimuraYukio NishimuraThomas I. WallowMasafumi Yamamoto
    • C08F1000
    • C08F232/08C08F220/06C08F220/18C08F220/28
    • A scaleable and high-yielding method of preparing copolymers that is useful as a component of a radiation sensitive resin composition is provided. The method includes the step of reacting at least one monomer A which is an unsaturated alicyclic monomer and forms a polymer main chain by dissociation of the unsaturated bond, and at least one unsaturated monomer B, which also forms a polymer chain by dissociation of an unsaturated bond, wherein less than two electron-withdrawing groups are directly appended to said unsaturation, and where said monomer B is other than the unsaturated alicyclic monomer and forms a polymer main chain, in the presence of a free radical initiator. The reacting step is carried out in a stoichiometric excess of monomer A as compared to monomer B. By carrying out the reacting step in an excess of monomer A as compared to monomer B, the resultant copolymer will have a greater molar concentration of monomer A than is obtainable using other methods.
    • 提供了可用作辐射敏感性树脂组合物的组分的共聚物的可扩展和高产率的方法。 所述方法包括使至少一种不饱和脂环族单体的单体A与不饱和键解离形成聚合物主链的至少一种不饱和单体B,其通过不饱和键解离形成聚合物链 键,其中少于两个吸电子基团直接连接到所述不饱和基团上,并且其中所述单体B不同于不饱和脂环族单体并形成聚合物主链,在自由基引发剂存在下。 与单体B相比,反应步骤在化学计量过量的单体A中进行。通过与单体B相比,通过进行过量单体A的反应步骤,所得共聚物将具有比单体A更大的摩尔浓度 可以使用其他方法获得。
    • 52. 发明授权
    • Resist pattern formation method
    • 抗蚀图案形成方法
    • US06403288B1
    • 2002-06-11
    • US09520345
    • 2000-03-07
    • Yukio NishimuraToshiyuki KaiEiichi KobayashiTakeo Shioya
    • Yukio NishimuraToshiyuki KaiEiichi KobayashiTakeo Shioya
    • G03F7039
    • G03F7/30G03F7/0045Y10S430/115
    • A method of forming a resist pattern from a chemically amplified positive radiation sensitive resin composition. The film thickness of an unexposed portion of a resist film formed from the chemically amplified positive radiation sensitive resin composition after wet development is 100 to 400 Å smaller than that before wet development. Alternatively, a resist film formed from the chemically amplified positive radiation sensitive resin composition is wet developed at both a temperature and a time enough to ensure that the film thickness of an unexposed portion of the resist film after wet development is 100 to 400 Å smaller than that before wet development. A resist film which is formed from a chemically amplified positive radiation sensitive resin composition and experiences a 100 to 400 Å reduction in the film thickness of an unexposed portion by wet development is useful as a resist film for forming a resist pattern.
    • 从化学放大正射线敏感性树脂组合物形成抗蚀剂图案的方法。湿法显影后由化学放大的正性辐射敏感性树脂组合物形成的抗蚀剂膜的未曝光部分的膜厚比以前小100至400埃 湿发展。 或者,由化学放大的正性辐射敏感性树脂组合物形成的抗蚀剂膜在足以确保湿显影后抗蚀剂膜的未曝光部分的膜厚度比100至400小的温度和时间都被湿成型 在湿显影之前的抗蚀剂膜是由化学放大的正性辐射敏感性树脂组合物形成的抗蚀剂膜,通过湿显影而经历100〜400的未曝光部分的膜厚度的降低作为形成抗蚀剂图案的抗蚀剂膜是有用的 。
    • 56. 发明申请
    • STORAGE APPARATUS AND CONTROL METHOD FOR STORAGE APPARATUS
    • 存储设备的存储设备和控制方法
    • US20120159265A1
    • 2012-06-21
    • US13279491
    • 2011-10-24
    • Satoru NISHITAYukio Nishimura
    • Satoru NISHITAYukio Nishimura
    • G06F11/14
    • G06F11/1443G06F11/10G06F11/2089H04L1/18
    • A first controller stores externally input data to a memory of the first controller, reads data stored in the memory of the first controller and transmits the data to a second controller through a first controller bridge, detects a failure at the first controller bridge in transmission of the data. The second controller receives the data through a second controller bridge, writes the received data into a memory of the second controller, and determines whether the failure is caused by the first controller if a failure occurs in the memory controller and the second controller bridge. If a failure is detected in the first controller and the second controller and the failure is caused by the first controller, the first controller transmits the data causing the failure during transmission through the first controller bridge and the second controller receives the data through the second controller bridge.
    • 第一控制器将外部输入数据存储到第一控制器的存储器中,读取存储在第一控制器的存储器中的数据,并通过第一控制器桥将数据发送到第二控制器,在第一控制器桥传输期间检测故障 数据。 第二控制器通过第二控制器桥接器接收数据,将接收到的数据写入第二控制器的存储器,并且如果在存储器控制器和第二控制器桥中发生故障,则确定是否由第一控制器引起故障。 如果在第一控制器和第二控制器中检测到故障,并且由第一控制器引起故障,则第一控制器在通过第一控制器桥传输期间发送导致故障的数据,并且第二控制器通过第二控制器接收数据 桥。
    • 58. 发明授权
    • Radiation-sensitive composition
    • 辐射敏感组合物
    • US08124314B2
    • 2012-02-28
    • US12752151
    • 2010-04-01
    • Yukio NishimuraHiromu Miyata
    • Yukio NishimuraHiromu Miyata
    • G03F7/004
    • G03F7/0397G03F7/0045G03F7/0046G03F7/0392Y10S430/108Y10S430/111
    • A radiation-sensitive composition includes (A) a first polymer which becomes alkali-soluble by the action of an acid and does not contain a fluorine atom, (B) a second polymer having a repeating unit (b1) shown by the following formula (1) and a fluorine-containing repeating unit (b2), and (C) a radiation-sensitive acid generator, the content of the second polymer (B) in the composition being 0.1 to 20 parts by mass relative to 100 parts by mass of the first polymer (A). wherein R1 represents a monovalent organic group, and R8 represents a linear or branched alkyl group having 1 to 12 carbon atoms. The composition can form a resist film capable of suppressing defects inherent to liquid immersion lithography such as watermark defects and bubble defects.
    • 辐射敏感性组合物包含(A)通过酸的作用而变成碱溶性的不含氟原子的第一聚合物,(B)具有下式所示的重复单元(b1)的第二聚合物(b1) 1)和含氟重复单元(b2)和(C)辐射敏感性酸产生剂,组合物中第二聚合物(B)的含量相对于100质量份为0.1质量份 第一聚合物(A)。 其中R1表示一价有机基团,R8表示碳原子数为1〜12的直链或支链烷基。 该组合物可以形成能够抑制液浸光刻固有的缺陷的抗蚀剂膜,例如水印缺陷和气泡缺陷。
    • 60. 发明申请
    • RADIATION-SENSITIVE COMPOSITION
    • 辐射敏感组合物
    • US20100203452A1
    • 2010-08-12
    • US12732220
    • 2010-03-26
    • Yukio NishimuraHiromu Miyata
    • Yukio NishimuraHiromu Miyata
    • G03F7/004
    • G03F7/0397G03F7/0045G03F7/2041
    • A radiation-sensitive composition includes a polymer (A) which includes a repeating unit (1) shown by the following formula (1) and a repeating unit (2) shown by the following formula (2), and a radiation-sensitive acid generator (B). wherein R1 is a methyl group, R2 is a linear or branched alkyl group having 1 to 12 carbon atoms, and R3 is a linear or branched alkyl group having 1 to 4 carbon atoms, and n is an integer from 1 to 5. The composition is useful as a chemically-amplified resist having excellent resolution performance and exhibiting low LWR, low PEB temperature dependency, excellent pattern collapse resistance, and low defect-incurring properties.
    • 辐射敏感性组合物包括聚合物(A),其包含由下式(1)表示的重复单元(1)和由下式(2)表示的重复单元(2),和辐射敏感性酸发生剂 (B)。 其中R1为甲基,R2为碳原子数1〜12的直链或支链烷基,R3为碳原子数1〜4的直链或支链烷基,n为1〜5的整数。 可用作具有优异的分辨率性能并且具有低LWR,低PEB温度依赖性,优异的图案抗塌陷性和低缺陷引发性能的化学增幅抗蚀剂。