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51. 发明申请

US20080135871A1 SEMICONDUCTOR COMPONENT 有权
标题翻译：半导体元件
公开(公告)号：US20080135871A1
公开(公告)日：2008-06-12
申请号：US11924115
申请日：2007-10-25
申请人： Holger Ruething , Frank Pfirsch , Armin Willmeroth , Frank Hille , Hans-Joachim Schulze
发明人： Holger Ruething , Frank Pfirsch , Armin Willmeroth , Frank Hille , Hans-Joachim Schulze
IPC分类号： H01L29/739 , H01L21/331
CPC分类号： H01L29/0696 , H01L21/22 , H01L29/083 , H01L29/0834 , H01L29/36 , H01L29/7395 , H01L29/7397
摘要： A semiconductor component is disclosed. One embodiment provides a semiconductor body having a cell region with at least one zone of a first conduction type and at least one zone of a second conduction type in a rear side. A drift zone of the first conduction type in the cell region is provided. The drift zone contains at least one region through which charge carriers flow in an operating mode of the semiconductor component in one polarity and charge carriers do not flow in an operating mode of the semiconductor component in an opposite polarity.
摘要翻译：公开了半导体部件。一个实施例提供一种半导体本体，其具有在后侧具有至少一个第一导电类型区域和至少一个第二导电类型区域的单元区域。提供了单元区域中第一导电类型的漂移区。漂移区包含至少一个区域，电荷载体在半导体组件的工作模式中以一个极性流动，并且电荷载体不以相反极性的半导体组件的工作模式流动。

52. 发明申请

US20060006386A1 Lateral semiconductor component with a drift zone having at least one field electrode 审中-公开
标题翻译：具有漂移区的侧向半导体元件具有至少一个场电极
公开(公告)号：US20060006386A1
公开(公告)日：2006-01-12
申请号：US10926581
申请日：2004-08-25
申请人： Franz Hirler , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Uwe Wahl , Gerald Deboy , Ralf Henninger
发明人： Franz Hirler , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Uwe Wahl , Gerald Deboy , Ralf Henninger
IPC分类号： H01L29/04
CPC分类号： H01L29/407 , H01L29/0847 , H01L29/0852 , H01L29/404 , H01L29/4175 , H01L29/4232 , H01L29/42368 , H01L29/4238 , H01L29/7393 , H01L29/7816 , H01L29/7825 , H01L29/8611 , H01L29/872
摘要： A semiconductor component is described. In one embodiment, the semiconductor component includes a semiconductor body with a first side and a second side. A drift zone is provided, which is arranged in the semiconductor body below the first side and extends in a first lateral direction of the semiconductor body between a first and a second doped terminal zone. At least one field electrode is provided, which is arranged in the drift zone, extends into the drift zone proceeding from the first side and is configured in a manner electrically insulated from the semiconductor body.
摘要翻译：描述半导体部件。在一个实施例中，半导体部件包括具有第一侧和第二侧的半导体本体。提供了漂移区，其布置在第一侧下方的半导体本体中，并且在第一和第二掺杂末端区之间沿半导体本体的第一横向方向延伸。设置至少一个场电极，其布置在漂移区中，从第一侧延伸到漂移区，并且以与半导体本体电绝缘的方式配置。

53. 发明授权

US06940126B2 Field-effect-controllable semiconductor component and method for producing the semiconductor component 有权
公开(公告)号：US06940126B2
公开(公告)日：2005-09-06
申请号：US10654683
申请日：2003-09-04
申请人： Gerald Deboy , Uwe Wahl , Armin Willmeroth
发明人： Gerald Deboy , Uwe Wahl , Armin Willmeroth
IPC分类号： H01L29/06 , H01L29/78 , H01L29/808 , H01L29/76 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/7838 , H01L29/8083
摘要： A semiconductor component has at least one first terminal zone of a first conductivity type in a semiconductor body. The first terminal zone is contact-connected by a first terminal electrode. A drift zone of the first conductivity type is adjoined by a second terminal zone of the second conductivity type. A channel zone of a second conductivity type is formed between the at least one first terminal zone and the drift zone. A control electrode is insulated from the semiconductor body and adjacent to the channel zone. A first channel is formed by the channel zone in a region adjacent to the control electrode, the first channel conducts only upon application of a control voltage that is not equal to zero between the control electrode and the first terminal zone. The first terminal electrode is connected to the drift zone via at least one second channel of the first conductivity type, which already conducts in the event of a control voltage equal to zero.

54. 发明申请

US20050024925A1 Configuration for generating a voltage sense signal in a power semiconductor component 有权
标题翻译：用于在功率半导体部件中产生电压检测信号的配置
公开(公告)号：US20050024925A1
公开(公告)日：2005-02-03
申请号：US10629107
申请日：2003-07-29
申请人： Gerald Deboy , Armin Willmeroth
发明人： Gerald Deboy , Armin Willmeroth
IPC分类号： G11C11/00 , H01L23/62 , H01L27/02 , H01L29/76 , H03K17/08
CPC分类号： H01L27/0248
摘要： The invention relates to a configuration for generating a low-voltage signal proportional to the high voltage present between the source and the drain of a power transistor. For this purpose, a capacitive voltage divider including the source-gate capacitance serving as a low-voltage tap and the source-drain capacitance serving as a high-voltage element is situated in a voltage sense region.
摘要翻译：本发明涉及一种用于产生与功率晶体管的源极和漏极之间存在的高电压成比例的低电压信号的配置。为此，包括用作低电压抽头的源极 - 栅极电容和用作高电压元件的源极 - 漏极电容的电容分压器位于电压感测区域中。

55. 发明授权

US08716792B2 Semiconductor device with a charge carrier compensation structure and method for the production of a semiconductor device 有权
标题翻译：具有载流子补偿结构的半导体器件和用于制造半导体器件的方法
公开(公告)号：US08716792B2
公开(公告)日：2014-05-06
申请号：US12241985
申请日：2008-09-30
申请人： Anton Mauder , Franz Hirler , Armin Willmeroth , Michael Rueb , Holger Kapels
发明人： Anton Mauder , Franz Hirler , Armin Willmeroth , Michael Rueb , Holger Kapels
IPC分类号： H01L21/20
CPC分类号： H01L29/36 , H01L21/266 , H01L29/0615 , H01L29/0619 , H01L29/0634 , H01L29/0688 , H01L29/0878 , H01L29/105 , H01L29/1095 , H01L29/41766 , H01L29/66712 , H01L29/7395 , H01L29/7811
摘要： A semiconductor device has a cell field with drift zones of a first type of conductivity and charge carrier compensation zones of a second type of conductivity complementary to the first type. An edge region which surrounds the cell field has a higher blocking strength than the cell field, the edge region having a near-surface area which is undoped to more weakly doped than the drift zones, and beneath the near-surface area at least one buried, vertically extending complementarily doped zone is positioned.
摘要翻译：半导体器件具有具有与第一类型互补的第二导电类型的漂移区和具有第二类型导电性的电荷载体补偿区的电池区。围绕细胞场的边缘区域具有比细胞场更高的阻挡强度，边缘区域具有未漂移至比漂移区更弱掺杂的近表面区域，并且在近表面区域下方至少有一个埋置垂直延伸的互补掺杂区定位。

56. 发明授权

US08698229B2 Transistor with controllable compensation regions 有权
标题翻译：具有可控补偿区域的晶体管
公开(公告)号：US08698229B2
公开(公告)日：2014-04-15
申请号：US13118928
申请日：2011-05-31
申请人： Armin Willmeroth , Franz Hirler
发明人： Armin Willmeroth , Franz Hirler
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/407 , H01L29/41766 , H01L29/42356 , H01L29/7803 , H01L29/7831
摘要： Disclosed is a MOSFET including at least one transistor cell. The at least one transistor cell includes a source region, a drain region, a body region and a drift region. The body region is arranged between the source region and the drift region and the drift region is arranged between the body region and the drain region. The at least one transistor cell further includes a compensation region arranged in the drift region and distant to the body region, a source electrode electrically contacting the source region and the body region, a gate electrode arranged adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a coupling arrangement including a control terminal. The coupling arrangement is configured to electrically couple the compensation region to at least one of the body region, the source region, the source electrode and the gate electrode dependent on a control signal received at the control terminal.
摘要翻译：披露了包括至少一个晶体管单元的MOSFET。所述至少一个晶体管单元包括源极区，漏极区，体区和漂移区。体区域布置在源极区域和漂移区域之间，并且漂移区域布置在体区域和漏极区域之间。所述至少一个晶体管单元还包括布置在所述漂移区域中并且远离所述体区域的补偿区域，与所述源极区域和所述体区域电接触的源电极，邻近所述体区域布置并与所述主体电介质绝缘的栅电极区域，以及包括控制端子的耦合装置。耦合装置被配置为根据在控制端接收到的控制信号将补偿区域电耦合到体区域，源极区域，源电极和栅电极中的至少一个。

57. 发明授权

US08643086B2 Semiconductor component with high breakthrough tension and low forward resistance 失效
标题翻译：具有高突破张力和低向前阻力的半导体元件
公开(公告)号：US08643086B2
公开(公告)日：2014-02-04
申请号：US13367909
申请日：2012-02-07
申请人： Frank Dieter Pfirsch , Armin Willmeroth , Anton Mauder , Stefan Sedlmaier
发明人： Frank Dieter Pfirsch , Armin Willmeroth , Anton Mauder , Stefan Sedlmaier
IPC分类号： H01L29/78
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/4916 , H01L29/66734 , H01L29/7803 , H01L29/7804 , H01L29/7813 , H01L29/872
摘要： A semiconductor component having a semiconductor body is disclosed. In one embodiment, the semiconductor component includes a drift zone of a first conductivity type, a drift control zone composed of a semiconductor material which is arranged adjacent to the drift zone at least in places, a dielectric which is arranged between the drift zone and the drift control zone at least in places. A quotient of the net dopant charge of the drift control zone, in an area adjacent to the accumulation dielectric and the drift zone, divided by the area of the dielectric arranged between the drift control zone and the drift zone is less than the breakdown charge of the semiconductor material in the drift control zone.
摘要翻译：公开了一种具有半导体本体的半导体部件。在一个实施例中，半导体部件包括第一导电类型的漂移区，由半导体材料构成的漂移控制区，该半导体材料至少位于与漂移区相邻的位置处，布置在漂移区和漂移控制区至少在地方。漂移控制区的净掺杂剂电荷在与积聚电介质和漂移区相邻的区域除以布置在漂移控制区和漂移区之间的介质的面积除以小于漂移控制区中的半导体材料。

58. 发明申请

US20140002145A1 DRIVING CIRCUIT FOR A TRANSISTOR 审中-公开
标题翻译：驱动电路用于晶体管
公开(公告)号：US20140002145A1
公开(公告)日：2014-01-02
申请号：US13534003
申请日：2012-06-27
申请人： Anton Mauder , Armin Willmeroth
发明人： Anton Mauder , Armin Willmeroth
IPC分类号： H03K3/015
CPC分类号： H03K17/06
摘要： In various embodiments, a driving circuit for a transistor is provided. The driving circuit may include a transistor including a control terminal; a capacitance; a first switch and a power source, wherein the first switch may be coupled between the power source and a first terminal of the capacitance; a second switch and an inductance which may be coupled in series between the first terminal of the capacitance and the control terminal of the transistor.
摘要翻译：在各种实施例中，提供了一种用于晶体管的驱动电路。驱动电路可以包括：包括控制端子的晶体管; 电容; 第一开关和电源，其中所述第一开关可以耦合在所述电源和所述电容的第一端之间; 可以串联耦合在电容的第一端和晶体管的控制端之间的第二开关和电感。

59. 发明授权

US08431988B2 Lateral trench transistor, as well as a method for its production 有权
标题翻译：横向沟槽晶体管，以及其生产方法
公开(公告)号：US08431988B2
公开(公告)日：2013-04-30
申请号：US11262483
申请日：2005-10-28
申请人： Franz Hirler , Uwe Wahl , Thorsten Meyer , Michael Rüb , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Carsten Schäffer
发明人： Franz Hirler , Uwe Wahl , Thorsten Meyer , Michael Rüb , Armin Willmeroth , Markus Schmitt , Carolin Tolksdorf , Carsten Schäffer
IPC分类号： H01L29/66
CPC分类号： H01L29/66689 , H01L21/26586 , H01L29/0696 , H01L29/1045 , H01L29/1095 , H01L29/41758 , H01L29/4236 , H01L29/42368 , H01L29/66666 , H01L29/66704 , H01L29/78 , H01L29/7825
摘要： A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.
摘要翻译：横向沟槽晶体管具有半导体本体，其具有嵌入与半导体本体隔离的栅电极的源极区，源极接触，体区，漏极区和栅极沟槽。重掺杂半导体区域设置在体区内或与其相邻，并且与源极接触电连接，并且其掺杂剂类型对应于身体区域。

60. 发明授权

US08421147B2 MOS transistor with elevated gate drain capacity 有权
标题翻译：具有提高的栅极漏极容量的MOS晶体管
公开(公告)号：US08421147B2
公开(公告)日：2013-04-16
申请号：US12976107
申请日：2010-12-22
申请人： Armin Willmeroth , Michael Treu
发明人： Armin Willmeroth , Michael Treu
IPC分类号： H01L29/66
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/4238 , H01L29/66712 , H01L29/66734 , H01L29/7397 , H01L29/7811 , H01L29/7813
摘要： A MOS transistor having an increased gate-drain capacitance is described. One embodiment provides a drift zone of a first conduction type. At least one transistor cell has a body zone, a source zone separated from the drift zone by the body zone, and a gate electrode, which is arranged adjacent to the body zone and which is dielectrically insulated from the body zone by a gate dielectric. At least one compensation zone of the first conduction type is arranged in the drift zone. At least one feedback electrode is arranged at a distance from the body zone, which is dielectrically insulated from the drift zone by a feedback dielectric and which is electrically conductively connected to the gate electrode.
摘要翻译：描述了具有增加的栅 - 漏电容的MOS晶体管。一个实施例提供了第一导电类型的漂移区。至少一个晶体管单元具有体区，通过体区与漂移区分离的源极区以及邻近体区设置并通过栅介质与体区介电绝缘的栅电极。在漂移区域中布置有至少一个第一导电类型的补偿区域。至少一个反馈电极被布置在与身体区隔一定距离处，该区域通过反馈电介质与漂移区介电绝缘，并且与电极导电连接。

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