专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US07211174B2 Method and system to provide electrical contacts for electrotreating processes 失效
标题翻译：为电镀工艺提供电接点的方法和系统
公开(公告)号：US07211174B2
公开(公告)日：2007-05-01
申请号：US10283025
申请日：2002-10-28
申请人： Bulent M Basol , Homayoun Talieh , Boguslaw A. Nagorski , Cyprian E. Uzoh , Jeffrey A. Bogart
发明人： Bulent M Basol , Homayoun Talieh , Boguslaw A. Nagorski , Cyprian E. Uzoh , Jeffrey A. Bogart
IPC分类号： C25D17/00
CPC分类号： C25D17/001 , C25D17/005 , H01L21/2885 , H01L21/3212 , H01L21/67086 , H01L21/76877
摘要： Systems and methods to provide electrical contacts to a workpiece to facilitate electrotreating processes, including electroplating and electroetching processes are presented.
摘要翻译：提供了向工件提供电接触以促进电镀工艺（包括电镀和电蚀工艺）的系统和方法。

52. 发明授权

US07195700B2 Method of electroplating copper layers with flat topography 失效
标题翻译：具有平坦地形的铜层电镀方法
公开(公告)号：US07195700B2
公开(公告)日：2007-03-27
申请号：US10769605
申请日：2004-01-30
申请人： Cyprian E. Uzoh , Serdar Aksu , Bulent M. Basol
发明人： Cyprian E. Uzoh , Serdar Aksu , Bulent M. Basol
IPC分类号： C25D5/18
CPC分类号： C25D5/02 , C25D5/18 , H01L21/2885 , Y10T428/249955 , Y10T428/249956 , Y10T428/249957
摘要： A method of electrochemically filling features on a wafer surface to form a substantially planar copper layer is provided. The features to be filled includes a first feature that is an unfilled feature with the smallest width and a second feature having the next larger width after the smallest feature. The first and the second features are less than 10 micrometers in width. The method comprises applying a first cathodic current to form a first copper layer on the wafer surface. The first copper layer has a planar portion over a first feature and a non-planar portion over a second feature. After a surface of the first copper layer is treated by applying a first pulsed current, a second cathodic current is applied to form a second copper layer on the first copper layer. The second copper layer has a planar portion over both the first and second features.
摘要翻译：提供了一种在晶片表面上电化学填充特征以形成基本平坦的铜层的方法。要填充的特征包括具有最小宽度的未填充特征的第一特征，以及在最小特征之后具有下一较大宽度的第二特征。第一和第二特征的宽度小于10微米。该方法包括施加第一阴极电流以在晶片表面上形成第一铜层。第一铜层在第一特征上具有平坦部分，并且在第二特征上具有非平面部分。在通过施加第一脉冲电流处理第一铜层的表面之后，施加第二阴极电流以在第一铜层上形成第二铜层。第二铜层在第一和第二特征上都具有平面部分。

53. 发明授权

US07097755B2 Electrochemical mechanical processing with advancible sweeper 有权
公开(公告)号：US07097755B2
公开(公告)日：2006-08-29
申请号：US10288558
申请日：2002-11-04
申请人： Bulent M. Basol , Halit N. Yakupoglu , Cyprian E. Uzoh , Homayoun Talieh
发明人： Bulent M. Basol , Halit N. Yakupoglu , Cyprian E. Uzoh , Homayoun Talieh
IPC分类号： C25D5/00 , C25F3/00
CPC分类号： H01L21/76879 , B24B21/04 , B24B37/046 , B24B37/26 , C25D5/02 , C25D5/06 , C25D5/22 , H01L21/2885 , H01L21/3212 , H01L21/7684 , H01L21/76877
摘要： The present invention provides an apparatus for electrochemical mechanical processing of a surface of a workpiece by utilizing a process solution. The apparatus of the present invention includes an electrode touching the process solution, a belt workpiece surface influencing device extended between a supply spool and a receiving spool. During the process, the surface of the workpiece is placed in proximity of the workpiece surface influencing device and the process solution is flowed through the process section and onto the surface while a potential difference is applied between the electrode and the surface of the workpiece.

54. 发明授权

US06936154B2 Planarity detection methods and apparatus for electrochemical mechanical processing systems 有权
标题翻译：电化学机械加工系统的平面检测方法和装置
公开(公告)号：US06936154B2
公开(公告)日：2005-08-30
申请号：US10017494
申请日：2001-12-07
申请人： Bulent M. Basol , Cyprian E. Uzoh
发明人： Bulent M. Basol , Cyprian E. Uzoh
IPC分类号： H01L21/00 , C25D5/52 , C25D5/02 , H01L21/288 , H01L21/445
CPC分类号： H01L21/67253
摘要： The methods and systems described provide for an in-situ detection of planarity of a layer that is deposited on or etched off the surface of a substrate. Planarity can be detected using various detection mechanisms, including optical, electrical, mechanical and acoustical, in combination with the electrochemical mechanical processing methods, including electrochemical mechanical deposition and electrochemical mechanical etching. Once planarity is detected, a planarity signal can be used to terminate or alter a process that has been previously initiated, or begin a new process. In a preferred embodiment, an optical detection system is used to detect planarity during the formation of planar conductive layers obtained by electrochemical mechanical processing.
摘要翻译：所描述的方法和系统提供了沉积在衬底表面上或从衬底的表面上蚀刻掉的层的平面度的原位检测。可以使用包括光学，电学，机械和声学在内的各种检测机制结合电化学机械加工方法（包括电化学机械沉积和电化学机械蚀刻）来检测平面度。一旦检测到平面度，就可以使用平面信号来终止或改变以前启动的过程，或者开始一个新的过程。在优选实施例中，光学检测系统用于在通过电化学机械处理获得的平面导电层的形成期间检测平面度。

55. 发明授权

US06866763B2 Method and system monitoring and controlling film thickness profile during plating and electroetching 有权
标题翻译：电镀和电镀过程中方法和系统监测和控制膜厚分布
公开(公告)号：US06866763B2
公开(公告)日：2005-03-15
申请号：US10427309
申请日：2003-04-30
申请人： Bulent M. Basol , Cyprian E. Uzoh
发明人： Bulent M. Basol , Cyprian E. Uzoh
IPC分类号： C25D7/12 , H01L21/288 , H01L21/321 , H01L21/768 , C25D21/12 , C25D17/00 , C25F3/00 , C25F7/00
CPC分类号： C25D17/001 , H01L21/2885 , H01L21/3212 , H01L21/76877
摘要： The present invention provides method of adjusting a thickness profile of a top metal layer of a workpiece using a processing solution. A thickness profile control member is included that has at least first and second regions that will allow for processing at respective first and second rates that are different from each other. When processing the workpiece, the processing system establishes relative lateral movement between the workpiece and the thickness profile control member so that a certain portion of the workpiece is disposed in locations that correspond to the first and second regions at different points in time during the processing. In a preferred aspect, the lateral movement is controlled as a result of data obtained from sensors relating to the thickness of a removed or deposited layer.
摘要翻译：本发明提供使用处理液调节工件的顶部金属层的厚度分布的方法。包括厚度分布控制构件，其具有至少第一和第二区域，其将允许以彼此不同的相应的第一和第二速率进行处理。在处理工件时，处理系统在工件和厚度轮廓控制构件之间建立相对的横向移动，使得在加工过程中不同时间点的工件的某一部分被设置在对应于第一和第二区域的位置。在一个优选的方面，横向移动是由与从移除或沉积层的厚度相关的传感器获得的数据的结果来控制的。

56. 发明授权

US06821409B2 Electroetching methods and systems using chemical and mechanical influence 有权
标题翻译：使用化学和机械影响的电蚀方法和系统
公开(公告)号：US06821409B2
公开(公告)日：2004-11-23
申请号：US10117991
申请日：2002-04-05
申请人： Bulent M. Basol , Cyprian E. Uzoh , Paul Lindquist , Homayoun Talieh
发明人： Bulent M. Basol , Cyprian E. Uzoh , Paul Lindquist , Homayoun Talieh
IPC分类号： B23H308
CPC分类号： C25D17/001 , B23H5/08 , C25D5/22 , C25F3/14 , C25F7/00 , H01L21/32134
摘要： The present invention applies an electrochemical etching solution to a material layer, preferably a metal layer, disposed on a workpiece, in the presence of a current. This electrochemical etching solution supplies to the material on the substrate surface the species to form an intermediate compound on the surface that can be more easily mechanically removed as intermediate compound fragments than the material. By removing the intermediate compound fragments, the process allows more efficient use of the supplied current to form another layer of intermediate compound that can also be mechanically removed, rather than using the current to result in another compound on the surface of the material that eventually dissolves into the solution. In another aspect of the invention, such intermediate compound particulates are externally generated and used to mechanically remove the surface layer of the material. Such intermediate particulates do not contaminate, and thus allow for more efficient material removal, as well as plating to occur within the same chamber, if desired.
摘要翻译：本发明在存在电流的情况下将电化学蚀刻溶液应用于设置在工件上的材料层，优选金属层。该电化学蚀刻溶液向基材表面上的材料提供物质，以在表面上形成中间体化合物，其可以比材料作为中间体化合物片段更容易地机械去除。通过去除中间体化合物片段，该方法允许更有效地使用所提供的电流以形成也可机械去除的另一层中间体化合物，而不是使用电流导致最终溶解的材料表面上的另一种化合物进入解决方案。在本发明的另一方面，这种中间体化合物颗粒是外部生成的并用于机械地去除材料的表面层。如果需要，这样的中间颗粒不会污染，因此允许更有效的材料去除以及电镀发生在相同的室内。

57. 发明授权

US06780772B2 Method and system to provide electroplanarization of a workpiece with a conducting material layer 有权
标题翻译：提供工件与导电材料层的电平面化的方法和系统
公开(公告)号：US06780772B2
公开(公告)日：2004-08-24
申请号：US10032219
申请日：2001-12-21
申请人： Cyprian E. Uzoh , Bulent M. Basol , Homayoun Talieh
发明人： Cyprian E. Uzoh , Bulent M. Basol , Homayoun Talieh
IPC分类号： H01L21302
CPC分类号： H01L21/76843 , C25F3/14 , H01L21/288 , H01L21/32115 , H01L21/3212 , H01L21/7684 , H01L21/76849 , H01L21/76867 , H01L21/76886 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Systems and methods to operate upon a nonplanar top surface of a conductive surface layer of a workpiece, so as to, for example, preserve the structural integrity of a dielectric film layer disposed below the conductive surface layer, are presented. According to an exemplary method, a layer of conducting material such as a conducting paste is applied over the nonplanar top surface of the conductive surface layer to obtain a planar top surface. At least a portion of the conducting material layer and at least a portion of the conductive surface layer are removed in a planar manner to at least partially planarize the nonplanar top surface. The conducting material layer may be annealed so that the conducting material layer diffuses with the conductive surface layer prior to removal of at least the portions of conducting material layer and the conductive surface layer.
摘要翻译：提供了在工件的导电表面层的非平面顶表面上操作以便例如保持设置在导电表面层下方的电介质膜层的结构完整性的系统和方法。根据示例性方法，在导电表面层的非平面顶表面上施加诸如导电浆料的导电材料层以获得平坦的顶表面。导电材料层的至少一部分和导电表面层的至少一部分以平面方式去除，以至少部分平坦化非平面顶表面。导电材料层可以退火，使得在去除至少导电材料层和导电表面层的部分之前，导电材料层与导电表面层扩散。

58. 发明授权

US06429519B1 Wiring structures containing interconnected metal and wiring levels including a continuous, single crystalline or polycrystalline conductive material having one or more twin boundaries 有权
标题翻译：包含互连的金属和布线层的布线结构，包括具有一个或多个双边界的连续的单晶或多晶导电材料
公开(公告)号：US06429519B1
公开(公告)日：2002-08-06
申请号：US09277699
申请日：1999-03-26
申请人： Cyprian E. Uzoh
发明人： Cyprian E. Uzoh
IPC分类号： H01L2348
CPC分类号： H01L21/76844 , H01L21/76868 , H01L21/76877 , H01L21/76883 , H01L23/5226 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： The present relates to a method of fabricating wiring structures which contain a continuous, single crystalline conductive material extending through the structure. This is achieved in the present invention by utilizing an open-bottomed via liner structure.
摘要翻译：本发明涉及一种制造布线结构的方法，其包含延伸穿过结构的连续的单晶导电材料。这在本发明中通过利用开口的通孔衬垫结构实现。

59. 发明授权

US06274935B1 Copper wire-bonding pad 有权
公开(公告)号：US06274935B1
公开(公告)日：2001-08-14
申请号：US09734939
申请日：2000-12-12
申请人： Cyprian E. Uzoh
发明人： Cyprian E. Uzoh
IPC分类号： H01L2348
摘要： A copper-containing, wire-bonding pad structure for bonding to gold wires. The structure includes a nickel-containing film to improve metallurgical characteristics. The structure also has a laminated impurity film within the copper pad, which complexes with the nickel-containing pad to prevent a destructive interaction between nickel and copper at elevated temperatures, or during the lifetime of the device or the wirebond.

60. 发明授权

US06258707B1 Triple damascence tungsten-copper interconnect structure 失效
标题翻译：三重马氏钨铜互连结构
公开(公告)号：US06258707B1
公开(公告)日：2001-07-10
申请号：US09227010
申请日：1999-01-07
申请人： Cyprian E. Uzoh
发明人： Cyprian E. Uzoh
IPC分类号： H01L214763
CPC分类号： H01L21/76849 , H01L21/31144 , H01L21/3212 , H01L21/76808 , H01L21/76813 , H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L21/76877 , H01L23/5226 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A structure and process for a triple damascene interconnection device. The device is formed within a terraced trench formed using damascene techniques within a single, relatively thick dielectric film. The interconnection device formed within the terraced structure includes a plurality of films and is a vertically coherent, redundant structure.
摘要翻译：一种三重镶嵌互连装置的结构和工艺。该装置形成在使用镶嵌技术在单个相对较厚的电介质膜内形成的梯形沟槽内。在梯形结构中形成的互连装置包括多个膜，并且是垂直相干的冗余结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式