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    • 52. 发明申请
    • Method and apparatus for converting precursor layers into photovoltaic absorbers
    • 用于将前体层转换成光伏吸收器的方法和装置
    • US20070111367A1
    • 2007-05-17
    • US11549590
    • 2006-10-13
    • Bulent Basol
    • Bulent Basol
    • H01L21/00C23C16/00
    • C23C16/305C23C16/54H01L31/0322H01L31/03928Y02E10/541
    • The present invention relates to method and apparatus for preparing thin films of semiconductor films for radiation detector and photovoltaic applications. In one aspect, the present invention includes a series of chambers between the inlet and the outlet, with each chamber having a gap that allows a substrate to pass therethrough and which is temperature controlled, thereby allowing each chamber to maintain a different temperature, and the substrate to be annealed based upon a predetermined temperature profile by efficiently moving through the series of chambers. In another aspect, each of the chambers opens and closes, and creates a seal when in the closed position during which time annealing takes place within the gap of the chamber. In a further aspect, the present invention provides a method of forming a Group IBIIIAVIA compound layer on a surface of a flexible roll.
    • 本发明涉及用于制备用于辐射检测器和光伏应用的半导体膜的薄膜的方法和装置。 在一个方面,本发明包括在入口和出口之间的一系列室,每个室具有允许基板通过并且被温度控制的间隙,从而允许每个室保持不同的温度,并且 基于通过有效地移动通过该系列室的预定温度分布来退火的基板。 在另一方面,每个室都打开和关闭,并且当处于关闭位置时产生密封,在该位置期间在室的间隙内进行退火。 另一方面,本发明提供了在柔性卷的表面上形成IBIIIAVIA族化合物层的方法。
    • 53. 发明申请
    • Filling deep and wide openings with defect-free conductor
    • 用无缺陷导体填充深而宽的开口
    • US20060252254A1
    • 2006-11-09
    • US11351838
    • 2006-02-09
    • Bulent Basol
    • Bulent Basol
    • H01L21/4763
    • H01L21/2885H01L21/76877H01L21/76898
    • Relatively large openings or features in integrated circuit metallization or packaging vias are filled by two plating or electrodeposition processes in sequence. The first electrodeposition process conformally lines the large, high aspect ratio features to define an inner cavity. The second electrodeposition process uses a different solution to bottom-up fill the inner cavity left by the first electrodeposition process. Conformality is typically induced by use of levelers during the first electrodeposition, while accelerators and suppressors may be used to promote bottom-up fill during the second electrodeposition, although either process may employ any of the three additives.
    • 集成电路金属化或封装通孔中的相对较大的开口或特征依次由两个电镀或电沉积工艺填充。 第一电沉积工艺一致地排列了大的高纵横比特征以限定内腔。 第二个电沉积过程使用不同的解决方案来自底向上填充第一次电沉积过程留下的内腔。 通常在第一次电沉积期间通过使用矫直机诱导一致性,而在第二次电沉积期间可以使用促进剂和抑制剂来促进自底向上填充,尽管任一方法都可以使用三种添加剂中的任何一种。
    • 56. 发明申请
    • Method and apparatus for localized material removal by electrochemical polishing
    • 通过电化学抛光进行局部材料去除的方法和装置
    • US20050112868A1
    • 2005-05-26
    • US10719909
    • 2003-11-21
    • Bulent Basol
    • Bulent Basol
    • C25F3/02C25F7/00H01L21/321H01L21/4763H01L21/768
    • H01L21/32115C25F3/02C25F7/00H01L21/7684
    • An apparatus for electropolishing a conductive material layer is disclosed. The apparatus comprises a porous conductive member configured to contact the conductive layer and having a first connector for receiving electrical power, an electrode insulatively coupled to the porous conductive member having a second connector configured to receive electrical power, a holder insulatively coupled to the porous conductive member and the electrode configured to establish relative motion between the porous conductive member and the conductive layer, and a power supply coupled to the first connector and the second connector configured to supply the electrical power between the electrode and the porous conductive member for electropolishing the conductive layer.
    • 公开了一种用于电解抛光导电材料层的装置。 所述设备包括多孔导电构件,其被配置为接触所述导电层并且具有用于接收电力的第一连接器,绝缘地连接到所述多孔导电构件的电极,所述多孔导电构件具有被配置为接收电力的第二连接器,与所述多孔导电体绝缘耦合的保持器 所述电极构造成在所述多孔导电构件和所述导电层之间建立相对运动;以及电源,其耦合到所述第一连接器和所述第二连接器,所述电源被配置为在所述电极和所述多孔导电构件之间提供电功率,以电抛光所述导电 层。