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51. 发明申请

US20050051424A1 Sputtering using an unbalanced magnetron 有权
标题翻译：使用不平衡磁控管进行溅射
公开(公告)号：US20050051424A1
公开(公告)日：2005-03-10
申请号：US10939832
申请日：2004-09-13
申请人： Jianming Fu , Praburam Gopalraja , Fusen Chen , John Forster
发明人： Jianming Fu , Praburam Gopalraja , Fusen Chen , John Forster
IPC分类号： C23C14/35 , H01J37/34 , C23C14/32
CPC分类号： H01J37/3455 , H01J37/3408
摘要： A sputtering process and magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering, in which the magnetron has a reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face with a gap therebetween. The outer pole of the magnetron of the invention is smaller than that of a circular magnetron similarly extending from the center to the periphery of the target and has a substantially larger total magnetic intensity. Thereby, sputtering at low pressure and high ionization fraction is enabled.
摘要翻译：溅射工艺和磁控管对于低压等离子体溅射或持续自溅射特别有利，其中磁控管具有减小的面积但是完全的目标覆盖。磁控管包括围绕内极面的外极面，其间具有间隙。本发明的磁控管的外极小于圆形磁控管的外极，其类似地从靶的中心延伸到周边，并具有基本上更大的总磁场强度。由此，可以实现低压高离子化分级的溅射。

52. 发明申请

US20050006222A1 Self-ionized and inductively-coupled plasma for sputtering and resputtering 有权
标题翻译：用于溅射和再溅射的自电离和电感耦合等离子体
公开(公告)号：US20050006222A1
公开(公告)日：2005-01-13
申请号：US10495506
申请日：2002-11-14
申请人： Peijun Ding , Rong Tao , Zheng Xu , Daniel Lubben , Suraj Rengarajan , Michael Miller , Arvind Sundarrajan , Xianmin Tang , John Forster , Jianming Fu , Roderick Mosely , Fusen Chen , Praburam Gopalraja
发明人： Peijun Ding , Rong Tao , Zheng Xu , Daniel Lubben , Suraj Rengarajan , Michael Miller , Arvind Sundarrajan , Xianmin Tang , John Forster , Jianming Fu , Roderick Mosely , Fusen Chen , Praburam Gopalraja
IPC分类号： C23C14/04 , C23C14/34 , C23C14/35 , C23C14/56 , H01J37/32 , H01J37/34 , H01L21/285 , H01L21/4763 , H01L21/768 , C23C14/00 , C23C14/32 , C25B9/00
CPC分类号： C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , C23C14/568 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76805 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).
摘要翻译：公开了一种促进SIP溅射和ICP溅射的磁控溅射反应器（410）及其使用方法。在另一个室（412）中，公开了一种辅助磁体阵列，其沿着磁控溅射反应器的侧面（414）定位，所述磁控溅射反应器在朝向晶片的一侧朝向靶。优选地，磁控管（436）是小的，其具有第一极性的更强的外极（442），其具有围绕轭（444）的第二极性的较弱内极（440），并且围绕轴线（438）旋转所述室使用旋转装置（446,448,450）。辅助磁体（462）优选地具有第一极性，以将不平衡磁场（460）朝着被提供电力（454）的基座（422）上的晶片（424）拉出。氩（426）通过阀（428）供应。目标（416）被供电（434）。

53. 发明授权

US06758949B2 Magnetically confined metal plasma sputter source with magnetic control of ion and neutral densities 失效
标题翻译：磁约束金属等离子体溅射源，具有离子和中性密度的磁控制
公开(公告)号：US06758949B2
公开(公告)日：2004-07-06
申请号：US10241114
申请日：2002-09-10
申请人： Wei D. Wang , Praburam Gopalraja , Jianming Fu
发明人： Wei D. Wang , Praburam Gopalraja , Jianming Fu
IPC分类号： C23C1435
CPC分类号： C23C14/345 , C23C14/221 , C23C14/35 , C23C14/352 , H01J37/3266 , H01J37/3402
摘要： A metal vapor deposition reactor includes a primary reactor chamber having a primary chamber enclosure comprising a ceiling and side wall. The reactor further includes a secondary reactor chamber having a secondary chamber enclosure and a metal source target within the secondary chamber formed of a metal species to be deposited on said semiconductor wafer. Process gas inlets furnish process gases into a region of the secondary chamber near a working surface of said metal source target. A D.C. power source connected across said metal source target and a conductive portion of said secondary chamber enclosure has sufficient power to support ionization of the process gas near the working surface of the metal source target whereby to form a plasma that sputters metal ions and neutrals from the working surface of the metal source target.
摘要翻译：金属气相沉积反应器包括具有包括天花板和侧壁的主室外壳的初级反应室。反应器还包括二次反应器室，该二次反应器室具有二次室外壳和在待沉积在所述半导体晶片上的金属物质形成的次级室内的金属源靶。工艺气体入口将工艺气体提供到靠近所述金属源靶的工作表面的次级室的区域中。连接在所述金属源靶和所述次室壳体的导电部分之间的直流电源具有足够的功率以支持在金属源靶的工作表面附近的工艺气体的离子化，从而形成等离子体，从而将金属离子和中性粒子从金属源目标的工作面。

54. 发明授权

US06709553B2 Multiple-step sputter deposition 有权
标题翻译：多步溅射沉积
公开(公告)号：US06709553B2
公开(公告)日：2004-03-23
申请号：US10143211
申请日：2002-05-09
申请人： Wei Wang , Praburam Gopalraja , Jianming Fu
发明人： Wei Wang , Praburam Gopalraja , Jianming Fu
IPC分类号： C23C1434
CPC分类号： C23C14/345 , C23C14/024 , C23C14/3492 , H01J37/3405
摘要： A method and apparatus for depositing a film on a substrate comprising a deposition interval wherein DC power is applied to a target to form a first plasma and material is sputtered from the target onto a substrate and, during a subsequent forming interval, high frequency power is applied to the target to remove material from at least a portion of the substrate. The sputtering working gas admitted to the chamber may be maintained at a first pressure during the deposition interval and the pressure of the sputtering working gas may be increased to a second pressure during the forming interval.
摘要翻译：一种用于在基板上沉积膜的方法和装置，其包括沉积间隔，其中DC功率被施加到靶以形成第一等离子体，并且材料从靶溅射到衬底上，并且在随后的形成间隔期间，高频功率为施加到靶材以从基材的至少一部分去除材料。允许进入腔室的溅射工作气体可以在沉积间隔期间保持在第一压力，并且溅射工作气体的压力可以在成形间隔期间增加到第二压力。

55. 发明授权

US06358376B1 Biased shield in a magnetron sputter reactor 有权
标题翻译：磁控溅射反应器中的偏置屏蔽
公开(公告)号：US06358376B1
公开(公告)日：2002-03-19
申请号：US09613880
申请日：2000-07-10
申请人： Wei Wang , Jianming Fu , Praburam Gopalraja
发明人： Wei Wang , Jianming Fu , Praburam Gopalraja
IPC分类号： C23C1435
CPC分类号： H01J37/32706 , H01J37/3408 , H01J37/3441
摘要： A magnetron sputter reactor and its method of operation which produces a high fraction of sputtered metal ions and in which the metal ions are confined by a positively biased shield and attracted to a negatively biased pedestal electrode supporting the wafer to be sputter coated. The shield may be positively biased to between 10 and 50VDC, preferably between 15 and 40VDC while the negative self-bias on the pedestal is typical tens of volts. A grounded shield is positioned between the target and the biased shield.
摘要翻译：一种磁控溅射反应器及其操作方法，其产生高比例的溅射金属离子，其中金属离子被正偏压屏蔽限制，并被吸引到支撑待溅射晶片的负偏置基座电极。屏蔽可以被正偏置在10和50VDC之间，优选地在15和40VDC之间，而基座上的负自偏压是典型的几十伏。接地屏蔽位于目标和偏置屏蔽之间。

56. 外观设计

USD450070S1 Sputtering chamber coil 失效
标题翻译：溅射室线圈
公开(公告)号：USD450070S1
公开(公告)日：2001-11-06
申请号：US29090618
申请日：1998-07-13
申请人： Praburam Gopalraja , Zheng Xu , Michael Rosenstein , John C. Forster
设计人： Praburam Gopalraja , Zheng Xu , Michael Rosenstein , John C. Forster

57. 外观设计

USD442853S1 Rounded overlap coil 失效
标题翻译：圆形重叠线圈
公开(公告)号：USD442853S1
公开(公告)日：2001-05-29
申请号：US29109893
申请日：1999-08-24
申请人： Praburam Gopalraja , John C. Forster , Michael Rosenstein
设计人： Praburam Gopalraja , John C. Forster , Michael Rosenstein

58. 外观设计

USD442852S1 Squared overlap coil 失效
标题翻译：平方重叠线圈
公开(公告)号：USD442852S1
公开(公告)日：2001-05-29
申请号：US29109870
申请日：1999-08-24
申请人： Praburam Gopalraja , John C. Forster , Michael Rosenstein
设计人： Praburam Gopalraja , John C. Forster , Michael Rosenstein

59. 外观设计

USD440582S1 Sputtering chamber coil 失效
公开(公告)号：USD440582S1
公开(公告)日：2001-04-17
申请号：US29090631
申请日：1998-07-13
申请人： Praburam Gopalraja , Zheng Xu , Michael Rosenstein , John C. Forster , Peijun Ding
设计人： Praburam Gopalraja , Zheng Xu , Michael Rosenstein , John C. Forster , Peijun Ding

60. 发明申请

US20070062452A1 Coil and coil support for generating a plasma 审中-公开
标题翻译：用于产生等离子体的线圈和线圈支架
公开(公告)号：US20070062452A1
公开(公告)日：2007-03-22
申请号：US11602134
申请日：2006-11-20
申请人： Ian Pancham , Michael Rosenstein , Leif DeLaurentis , Allen Lau , Praburam Gopalraja , James Gogh
发明人： Ian Pancham , Michael Rosenstein , Leif DeLaurentis , Allen Lau , Praburam Gopalraja , James Gogh
IPC分类号： C23C16/00
CPC分类号： H01J37/321 , H01J37/32495 , H01J37/3408
摘要： A coil has an integral fastener portion to facilitate fastening the coil to a shield wall to reduce generation of particulates.
摘要翻译：线圈具有一体的紧固件部分，以便于将线圈紧固到屏蔽壁以减少微粒的产生。

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