专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US3966477A Spectrally sensitized silver halide photographic emulsion 失效
标题翻译：光谱增感卤化银照相乳剂
公开(公告)号：US3966477A
公开(公告)日：1976-06-29
申请号：US530100
申请日：1974-12-06
申请人： Masanao Hinata , Haruo Takei , Tadashi Ikeda , Akira Ogawa , Akira Sato , Atsuo Iwamoto
发明人： Masanao Hinata , Haruo Takei , Tadashi Ikeda , Akira Ogawa , Akira Sato , Atsuo Iwamoto
IPC分类号： G03C1/28 , G03C1/29 , G03C1/14
CPC分类号： G03C1/29
摘要： A silver halide photographic emulsion containing, in combination, supersensitizing amounts of at last two carbocyanine sensitizing dyes as hereinafter defined.
摘要翻译：一种卤化银照相乳剂，其组合含有如下定义的最后两种碳菁感染染料的超敏化剂量。

52. 发明授权

US3947275A Spectrally sensitized silver halide photographic emulsion 失效
标题翻译：光谱增感卤化银照相乳剂
公开(公告)号：US3947275A
公开(公告)日：1976-03-30
申请号：US417841
申请日：1973-11-21
申请人： Keisuke Shiba , Akira Sato , Akira Ogawa
发明人： Keisuke Shiba , Akira Sato , Akira Ogawa
IPC分类号： G03C1/29 , G03C1/14
CPC分类号： G03C1/29
摘要： A sensitized gelatino-silver halide emulsion comprising a supersensitizing combination of at least one sensitizing dye represented by general formula I: ##SPC1##wherein R.sub.1, R.sub.2 and R.sub.3 are each a member selected from the group consisting of an alkyl having up to 6 carbon atoms and a substituted alkyl group having up to 6 carbon atoms, at least one of R.sub.1, R.sub.2 and R.sub.3 being a substituted alkyl group having a sulfo group therein; R.sub.4 is a hydrogen atom or forms an alkylene linkage together with R.sub.2 ; Z.sub.1 is an atomic group necessary for completing a benzimidazole nucleus; A.sub.1 and A.sub.2 are each a member selected from the group consisting of a hydrogen atom, a phenyl group, a halogen atom, a carboxyl group, an alkoxy carbonyl group, an alkyl group, an alkoxyl group, a hydroxyl group, a trifluoromethyl group, and a cyano group, A.sub.2 being capable of condensing with A.sub.1 or A.sub.3 to form a benzene nucleus; and A.sub.3 is a member selected from the group consisting of a hydrogen atom and an alkyl group; at least one substituent for A.sub.1, A.sub.2 or A.sub.3 entering the benzoxazole nucleus when R.sub.2 and R.sub.4 are bridged by an alkylene group and Z.sub.1 is substituted with identical halogen atoms; and at least one of sensitizing dyes represented by general formula II: ##SPC2##in which R.sub.5, R.sub.6, R.sub.7 and R.sub.8 have the same meaning as those of R.sub.1, R.sub.2 and R.sub.3 above and additionally are a carbamoylalkyl group, at least one of R.sub.5, R.sub.6, R.sub.7 and R.sub.8 being a substituted alkyl group having a member selected from the group consisting of a sulfo group and a carboxyl group; Z.sub.2 and Z.sub.3 are atomic groups necessary for forming a benzimidazole nucleus; X.sup.- is an acid anion and n is an integer of from 1 to 2, n being 1 when an intramolecular salt is formed.
摘要翻译：敏化明胶 - 卤化银乳剂，其包含由通式I表示的至少一种敏化染料的超敏化组合：

53. 发明授权

US09091751B2 Sound source detection system 有权
标题翻译：声源检测系统
公开(公告)号：US09091751B2
公开(公告)日：2015-07-28
申请号：US14346033
申请日：2012-09-19
申请人： Ryuji Funayama , Jun Sato , Osami Yamamoto , Kensaku Asahi , Hideki Banno , Keiichi Yamada , Akira Ogawa , Yuichi Tanaka , Hiroyuki Hoshino
发明人： Ryuji Funayama , Jun Sato , Osami Yamamoto , Kensaku Asahi , Hideki Banno , Keiichi Yamada , Akira Ogawa , Yuichi Tanaka , Hiroyuki Hoshino
IPC分类号： G01S3/80 , G01S3/808 , G01S11/14
CPC分类号： G01S3/808 , G01S11/14
摘要： A sound source detection system for detecting a sound source (e.g., running sound of a vehicle) based on sound collected by microphones extracts characteristic amounts from the sound collected by the microphones, sets a plurality of classes according to the position of the sound source by a multi-class pattern recognition method (e.g., multi-class SVM) using the characteristic amounts, extracts characteristic amounts from sound collected by the microphones for detection of a sound source, determines a class to which the extracted characteristic amounts belong, from the preset plurality of classes, and estimates the sound source based on the class.
摘要翻译：用于基于由麦克风收集的声音来检测声源（例如，车辆的运行声音）的声源检测系统从麦克风收集的声音中提取特征量，根据声源的位置根据声源的位置设置多个等级使用特征量的多类别模式识别方法（例如，多类SVM）从用于检测声源的麦克风收集的声音中提取特征量，从预设中确定提取的特征量所属的类别多个类，并根据课程估计声源。

54. 发明授权

US08705303B2 Semiconductor device and control method of the same 有权
标题翻译：半导体器件及其控制方法相同
公开(公告)号：US08705303B2
公开(公告)日：2014-04-22
申请号：US13413527
申请日：2012-03-06
申请人： Akira Ogawa , Masaru Yano
发明人： Akira Ogawa , Masaru Yano
IPC分类号： G11C7/00
CPC分类号： H01L27/1052 , G11C16/0466 , G11C16/28 , Y10T29/41
摘要： The present invention provides a semiconductor memory and a control method therefor, the semiconductor device including a first current-voltage conversion circuit connected to a core cell provided in a nonvolatile memory cell array, a second current-voltage conversion circuit connected to a reference cell through a reference cell data line, a sense amplifier sensing an output from the first current-voltage conversion circuit and an output from the second current-voltage conversion circuit, a compare circuit comparing a voltage level at the reference cell data line with a predefined voltage level, and a charging circuit charging the reference cell data line, if the voltage level at the reference cell data line is lower than the predefined voltage level during pre-charging the reference cell data line. According to the present invention, the pre-charging period of the reference cell data line can be shortened, and the data read time can be shortened.
摘要翻译：本发明提供一种半导体存储器及其控制方法，所述半导体器件包括连接到设置在非易失性存储单元阵列中的核心单元的第一电流 - 电压转换电路，连接到参考单元的第二电流 - 电压转换电路参考单元数据线，感测来自第一电流 - 电压转换电路的输出和来自第二电流 - 电压转换电路的输出的读出放大器，将参考单元数据线上的电压电平与预定电压电平进行比较的比较电路以及如果在对所述参考单元数据线预充电期间所述参考单元数据线处的电压电平低于所述预定电压电平，则对所述参考单元数据线充电的充电电路。根据本发明，可以缩短参考单元数据线的预充电周期，并且可以缩短数据读取时间。

55. 发明授权

US08351268B2 Semiconductor device and control method of the same 有权
公开(公告)号：US08351268B2
公开(公告)日：2013-01-08
申请号：US13253634
申请日：2011-10-05
申请人： Akira Ogawa , Masaru Yano
发明人： Akira Ogawa , Masaru Yano
IPC分类号： G11C11/34
CPC分类号： H01L27/1052 , G11C16/0466 , G11C16/28 , Y10T29/41
摘要： The present invention provides a semiconductor memory and a control method therefor, the semiconductor device including a first current-voltage conversion circuit connected to a core cell provided in a nonvolatile memory cell array, a second current-voltage conversion circuit connected to a reference cell through a reference cell data line, a sense amplifier sensing an output from the first current-voltage conversion circuit and an output from the second current-voltage conversion circuit, a compare circuit comparing a voltage level at the reference cell data line with a predefined voltage level, and a charging circuit charging the reference cell data line, if the voltage level at the reference cell data line is lower than the predefined voltage level during pre-charging the reference cell data line. According to the present invention, the pre-charging period of the reference cell data line can be shortened, and the data read time can be shortened.

56. 发明授权

US08064264B2 Ornand flash memory and method for controlling the same 有权
标题翻译： Ornand闪存及其控制方法
公开(公告)号：US08064264B2
公开(公告)日：2011-11-22
申请号：US11974295
申请日：2007-10-11
申请人： Naoharu Shinozaki , Masao Taguchi , Akira Ogawa , Takuo Ito
发明人： Naoharu Shinozaki , Masao Taguchi , Akira Ogawa , Takuo Ito
IPC分类号： G11C16/06
CPC分类号： G11C16/26
摘要： A semiconductor device that includes: a memory cell array that includes non-volatile memory cells; an area that is contained in the memory cell array and stores area data; a first storage unit that holds data transferred from the memory cell array, and outputs the data; and a control circuit that selects between a primary reading mode for causing the first storage unit to hold the area data transferred from the memory cell array and to output the area data, and a secondary reading mode for causing the first storage unit to hold a plurality of pieces of divisional data formed by dividing the area data and transferred from the memory cell array and to output the divisional data.
摘要翻译：一种半导体器件，包括：包括非易失性存储单元的存储单元阵列; 包含在存储单元阵列中并存储区域数据的区域; 第一存储单元，保存从存储单元阵列传送的数据，并输出数据; 以及控制电路，其选择用于使所述第一存储单元保持从所述存储单元阵列传送的区域数据并输出所述区域数据的主读取模式;以及辅助读取模式，用于使所述第一存储单元保持多个通过划分区域数据并从存储单元阵列传送而形成的分割数据并输出分割数据。

57. 发明申请

US20110032764A1 SEMICONDUCTOR DEVICE AND CONTROL METHOD OF THE SAME 有权
标题翻译：半导体器件及其控制方法
公开(公告)号：US20110032764A1
公开(公告)日：2011-02-10
申请号：US12905716
申请日：2010-10-15
申请人： Akira Ogawa , Masaru Yano
发明人： Akira Ogawa , Masaru Yano
IPC分类号： G11C16/28 , G11C16/04
CPC分类号： H01L27/1052 , G11C16/0466 , G11C16/28 , Y10T29/41
摘要： The present invention provides a semiconductor memory and a control method therefor, the semiconductor device including a first current-voltage conversion circuit (16) connected to a core cell (12) provided in a nonvolatile memory cell array (10), a second current-voltage conversion circuit (26) connected to a reference cell (22) through a reference cell data line (24), a sense amplifier (18) sensing an output from the first current-voltage conversion circuit and an output from the second current-voltage conversion circuit, a compare circuit (28) comparing a voltage level at the reference cell data line with a predefined voltage level, and a charging circuit (30) charging the reference cell data line, if the voltage level at the reference cell data line is lower than the predefined voltage level during pre-charging the reference cell data line. According to the present invention, the pre-charging period of the reference cell data line can be shortened, and the data read time can be shortened.
摘要翻译：本发明提供一种半导体存储器及其控制方法，所述半导体器件包括连接到设置在非易失性存储单元阵列（10）中的核心单元（12）的第一电流 - 电压转换电路（16），第二电流 - 电压转换电路（26），通过参考单元数据线（24）连接到参考单元（22）;感测放大器（18），感测来自第一电流 - 电压转换电路的输出和来自第二电流电压转换电路，将参考单元数据线上的电压电平与预定电压电平进行比较的比较电路（28）以及对参考单元数据线充电的充电电路（30），如果参考单元数据线上的电压电平为在预充电参考单元数据线期间低于预定电压电平。根据本发明，可以缩短参考单元数据线的预充电周期，并且可以缩短数据读取时间。

58. 发明授权

US07702413B2 Semiconductor device manufacturing system and method for manufacturing semiconductor devices including calculating oxide film thickness using real time simulator 失效
标题翻译：半导体器件制造系统以及使用实时仿真器计算氧化膜厚度的半导体器件的制造方法
公开(公告)号：US07702413B2
公开(公告)日：2010-04-20
申请号：US10935430
申请日：2004-09-08
申请人： Yukihiro Ushiku , Akira Ogawa , Hidenori Kakinuma , Shunji Shuto , Masahiro Abe , Tatsuo Akiyama , Shigeru Komatsu
发明人： Yukihiro Ushiku , Akira Ogawa , Hidenori Kakinuma , Shunji Shuto , Masahiro Abe , Tatsuo Akiyama , Shigeru Komatsu
IPC分类号： G06F19/00
CPC分类号： G05B19/4184 , G05B19/41885 , G05B2219/32368 , G05B2219/45031 , Y02P90/14 , Y02P90/22 , Y02P90/26 , Y02P90/265
摘要： The present invention provides a solution for interleaving data frames, in a semiconductor device manufacturing system in which the processing apparatus for conducting a process on any one of a semiconductor substrate and a thin film on a surface thereof; a self-diagnostic system for diagnosing a state of the processing apparatus; and a parameter fitting apparatus for maintaining a parameter of the self-diagnostic system when an inspection result of the semiconductor substrate having undergone the process has been determined to be correct, and for changing the parameter of the self-diagnostic system when the inspection result has been determined to be incorrect.
摘要翻译：本发明提供了一种在半导体器件制造系统中交错数据帧的解决方案，其中用于对其表面上的半导体衬底和薄膜中的任一个进行处理的处理装置; 用于诊断处理装置的状态的自诊断系统; 以及参数拟合装置，当已经确定了所述处理的半导体衬底的检查结果被确定为正确时，用于维持所述自我诊断系统的参数，并且当所述检查结果具有所述参数时，改变所述自我诊断系统的参数被确定为不正确。

59. 发明授权

US07623937B2 Semiconductor device manufacturing system and method for manufacturing semiconductor devices including calculating oxide film thickness using real time simulator 有权
公开(公告)号：US07623937B2
公开(公告)日：2009-11-24
申请号：US10935430
申请日：2004-09-08
申请人： Yukihiro Ushiku , Akira Ogawa , Hidenori Kakinuma , Shunji Shuto , Masahiro Abe , Tatsuo Akiyama , Shigeru Komatsu
发明人： Yukihiro Ushiku , Akira Ogawa , Hidenori Kakinuma , Shunji Shuto , Masahiro Abe , Tatsuo Akiyama , Shigeru Komatsu
IPC分类号： G06F19/00
摘要： The present invention provides a solution for interleaving data frames, in a semiconductor device manufacturing system in which the processing apparatus for conducting a process on any one of a semiconductor substrate and a thin film on a surface thereof; a self-diagnostic system for diagnosing a state of the processing apparatus; and a parameter fitting apparatus for maintaining a parameter of the self-diagnostic system when an inspection result of the semiconductor substrate having undergone the process has been determined to be correct, and for changing the parameter of the self-diagnostic system when the inspection result has been determined to be incorrect.

60. 发明授权

US07411086B2 Process for the production of n-alkylaminoalkyl (meth)acrylates 有权
标题翻译：（甲基）丙烯酸正烷基氨基烷基酯的制备方法
公开(公告)号：US07411086B2
公开(公告)日：2008-08-12
申请号：US10558193
申请日：2004-05-27
申请人： Shuhei Otsuka , Akira Ogawa , Tohru Endoh , Shingo Tanaka
发明人： Shuhei Otsuka , Akira Ogawa , Tohru Endoh , Shingo Tanaka
IPC分类号： C07C69/52
CPC分类号： C07C213/06 , C07C219/08
摘要： The present invention is to provide a method of producing an N-alkylaminoalkyl (meth)acrylate containing a small amount of low boiling components, especially, containing a small amount of raw components, without any complicated operations or special apparatuses. The method of producing an N-alkylaminoalkyl (meth)acrylate comprising the steps of: (A) performing the reaction between the (meth)acrylic acid ester and the N-alkylaminoalkyl alcohol in a presence of a catalyst to obtain a reaction solution containing the N-alkylaminoalkyl (meth)acrylate; (B) distilling out components which have lower boiling points than the N-alkylaminoalkyl (meth)acrylate from the reaction solution obtained by the step (A); and (C) distilling the N-alkylaminoalkyl (meth)acrylate; and further comprising the step of: (D) adjusting water concentration at a range from 0.01 to 1 wt %. in the reaction solution which is located after the step (A) and before the step (C).
摘要翻译：本发明提供一种含有少量低沸点成分的（甲基）丙烯酸N-烷基氨基烷基酯（特别是含有少量原料成分）的方法，无需任何复杂的操作或特殊设备。（甲基）丙烯酸N-烷基氨基烷基酯的制造方法，其特征在于：（A）在催化剂存在下进行（甲基）丙烯酸酯与N-烷基氨基烷基醇的反应，得到含有（甲基）丙烯酸N-烷基氨基烷基酯; （B）从步骤（A）获得的反应溶液中蒸馏沸点低于（甲基）丙烯酸N-烷基氨基烷基酯的组分; 和（C）蒸馏（甲基）丙烯酸N-烷基氨基烷基酯; 并且还包括以下步骤：（D）将水浓度调节在0.01至1重量％的范围内。在步骤（A）之后和步骤（C）之前的反应溶液中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式