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1. 发明授权

US07702413B2 Semiconductor device manufacturing system and method for manufacturing semiconductor devices including calculating oxide film thickness using real time simulator 失效
标题翻译：半导体器件制造系统以及使用实时仿真器计算氧化膜厚度的半导体器件的制造方法
公开(公告)号：US07702413B2
公开(公告)日：2010-04-20
申请号：US10935430
申请日：2004-09-08
申请人： Yukihiro Ushiku , Akira Ogawa , Hidenori Kakinuma , Shunji Shuto , Masahiro Abe , Tatsuo Akiyama , Shigeru Komatsu
发明人： Yukihiro Ushiku , Akira Ogawa , Hidenori Kakinuma , Shunji Shuto , Masahiro Abe , Tatsuo Akiyama , Shigeru Komatsu
IPC分类号： G06F19/00
CPC分类号： G05B19/4184 , G05B19/41885 , G05B2219/32368 , G05B2219/45031 , Y02P90/14 , Y02P90/22 , Y02P90/26 , Y02P90/265
摘要： The present invention provides a solution for interleaving data frames, in a semiconductor device manufacturing system in which the processing apparatus for conducting a process on any one of a semiconductor substrate and a thin film on a surface thereof; a self-diagnostic system for diagnosing a state of the processing apparatus; and a parameter fitting apparatus for maintaining a parameter of the self-diagnostic system when an inspection result of the semiconductor substrate having undergone the process has been determined to be correct, and for changing the parameter of the self-diagnostic system when the inspection result has been determined to be incorrect.
摘要翻译：本发明提供了一种在半导体器件制造系统中交错数据帧的解决方案，其中用于对其表面上的半导体衬底和薄膜中的任一个进行处理的处理装置; 用于诊断处理装置的状态的自诊断系统; 以及参数拟合装置，当已经确定了所述处理的半导体衬底的检查结果被确定为正确时，用于维持所述自我诊断系统的参数，并且当所述检查结果具有所述参数时，改变所述自我诊断系统的参数被确定为不正确。

2. 发明授权

US07623937B2 Semiconductor device manufacturing system and method for manufacturing semiconductor devices including calculating oxide film thickness using real time simulator 有权
公开(公告)号：US07623937B2
公开(公告)日：2009-11-24
申请号：US10935430
申请日：2004-09-08
申请人： Yukihiro Ushiku , Akira Ogawa , Hidenori Kakinuma , Shunji Shuto , Masahiro Abe , Tatsuo Akiyama , Shigeru Komatsu
发明人： Yukihiro Ushiku , Akira Ogawa , Hidenori Kakinuma , Shunji Shuto , Masahiro Abe , Tatsuo Akiyama , Shigeru Komatsu
IPC分类号： G06F19/00
摘要： The present invention provides a solution for interleaving data frames, in a semiconductor device manufacturing system in which the processing apparatus for conducting a process on any one of a semiconductor substrate and a thin film on a surface thereof; a self-diagnostic system for diagnosing a state of the processing apparatus; and a parameter fitting apparatus for maintaining a parameter of the self-diagnostic system when an inspection result of the semiconductor substrate having undergone the process has been determined to be correct, and for changing the parameter of the self-diagnostic system when the inspection result has been determined to be incorrect.

3. 发明申请

US20050095774A1 Semiconductor device manufacturing system and method for manufacturing semiconductor devices 失效
标题翻译：半导体器件制造系统和半导体器件的制造方法
公开(公告)号：US20050095774A1
公开(公告)日：2005-05-05
申请号：US10935430
申请日：2004-09-08
申请人： Yukihiro Ushiku , Akira Ogawa , Hidenori Kakinuma , Shunji Shuto , Masahiro Abe , Tatsuo Akiyama , Shigeru Komatsu
发明人： Yukihiro Ushiku , Akira Ogawa , Hidenori Kakinuma , Shunji Shuto , Masahiro Abe , Tatsuo Akiyama , Shigeru Komatsu
IPC分类号： H01L21/3065 , G05B19/418 , H01L21/00 , H01L21/02 , H01L21/31 , H01L21/316 , H01L21/331
CPC分类号： G05B19/4184 , G05B19/41885 , G05B2219/32368 , G05B2219/45031 , Y02P90/14 , Y02P90/22 , Y02P90/26 , Y02P90/265
摘要： The present invention provides a solution for interleaving data frames, in a semiconductor device manufacturing system in which the processing apparatus for conducting a process on any one of a semiconductor substrate and a thin film on a surface thereof; a self-diagnostic system for diagnosing a state of the processing apparatus; and a parameter fitting apparatus for maintaining a parameter of the self-diagnostic system when an inspection result of the semiconductor substrate having undergone the process has been determined to be correct, and for changing the parameter of the self-diagnostic system when the inspection result has been determined to be incorrect.
摘要翻译：本发明提供了一种在半导体器件制造系统中交错数据帧的解决方案，其中用于对其表面上的半导体衬底和薄膜中的任一个进行处理的处理装置; 用于诊断处理装置的状态的自诊断系统; 以及参数拟合装置，当已经确定了所述处理的半导体衬底的检查结果被确定为正确时，用于维持所述自我诊断系统的参数，并且当所述检查结果具有所述参数时，改变所述自我诊断系统的参数被确定为不正确。

4. 发明授权

US07324855B2 Process-state management system, management server and control server adapted for the system, method for managing process-states, method for manufacturing a product, and computer program product for the management server 失效
标题翻译：适用于系统的过程状态管理系统，管理服务器和控制服务器，用于管理过程状态的方法，用于制造产品的方法以及用于管理服务器的计算机程序产品
公开(公告)号：US07324855B2
公开(公告)日：2008-01-29
申请号：US11217592
申请日：2005-09-02
申请人： Yukihiro Ushiku , Hidenori Kakinuma , Tsutomu Miki , Junji Sugamoto , Akira Ogawa , Yoshinori Ookawauchi , Giichi Inoue , Tomomi Ino
发明人： Yukihiro Ushiku , Hidenori Kakinuma , Tsutomu Miki , Junji Sugamoto , Akira Ogawa , Yoshinori Ookawauchi , Giichi Inoue , Tomomi Ino
IPC分类号： G06F19/00
CPC分类号： G05B19/41865 , G05B2219/31372 , G05B2219/31395 , G05B2219/31455 , G06Q30/0283 , Y02P90/12 , Y02P90/18 , Y02P90/20
摘要： A process-state management system encompasses: a plurality of production machines; a control server configured to collectively control at least part of the production machines; a management server including a data-linking module configured to link operation-management data of the production machines with corresponding management information transmitted from the control server, respectively, the management server analyze the operation-management data linked with the management information with a common analysis application; and a management database configured to store the operation-management data linked with the management information.
摘要翻译：过程状态管理系统包括：多个生产机器; 控制服务器，其被配置为共同控制所述生产机器的至少一部分; 管理服务器，其包括分别将生产机的运行管理数据与从控制服务器发送的相应的管理信息相连接的数据链接模块，所述管理服务器分析与所述管理信息相关联的运行管理数据，应用; 以及管理数据库，被配置为存储与管理信息相关联的操作管理数据。

5. 发明申请

US20060064188A1 Process-state management system, management server and control server adapted for the system, method for managing process-states, method for manufacturing a product, and computer program product for the management server 失效
标题翻译：适用于系统的过程状态管理系统，管理服务器和控制服务器，用于管理过程状态的方法，用于制造产品的方法以及用于管理服务器的计算机程序产品
公开(公告)号：US20060064188A1
公开(公告)日：2006-03-23
申请号：US11217592
申请日：2005-09-02
申请人： Yukihiro Ushiku , Hidenori Kakinuma , Tsutomu Miki , Junji Sugamoto , Akira Ogawa , Yoshinori Ookawauchi , Giichi Inoue , Tomomi Ino
发明人： Yukihiro Ushiku , Hidenori Kakinuma , Tsutomu Miki , Junji Sugamoto , Akira Ogawa , Yoshinori Ookawauchi , Giichi Inoue , Tomomi Ino
IPC分类号： G06F19/00
CPC分类号： G05B19/41865 , G05B2219/31372 , G05B2219/31395 , G05B2219/31455 , G06Q30/0283 , Y02P90/12 , Y02P90/18 , Y02P90/20
摘要： A process-state management system encompasses: a plurality of production machines; a control server configured to collectively control at least part of the production machines; a management server including a data-linking module configured to link operation-management data of the production machines with corresponding management information transmitted from the control server, respectively, the management server analyze the operation-management data linked with the management information with a common analysis application; and a management database configured to store the operation-management data linked with the management information.
摘要翻译：过程状态管理系统包括：多个生产机器; 控制服务器，其被配置为共同控制所述生产机器的至少一部分; 管理服务器，其包括分别将生产机的运行管理数据与从控制服务器发送的相应的管理信息相连接的数据链接模块，所述管理服务器分析与所述管理信息相关联的运行管理数据，应用; 以及管理数据库，被配置为存储与管理信息相关联的操作管理数据。

6. 发明授权

US07463941B2 Quality control system, quality control method, and method of lot-to-lot wafer processing 失效
标题翻译：质量控制体系，质量控制方法，批量批处理方法
公开(公告)号：US07463941B2
公开(公告)日：2008-12-09
申请号：US11395276
申请日：2006-04-03
申请人： Akira Ogawa , Yukihiro Ushiku , Tomomi Ino
发明人： Akira Ogawa , Yukihiro Ushiku , Tomomi Ino
IPC分类号： G06F19/00 , G05B19/418
CPC分类号： G05B19/41875 , G05B2219/32097 , G05B2219/32194 , G05B2219/45031 , H01L21/67253 , Y02P90/20 , Y02P90/22
摘要： A quality control system has: a QC value storage unit, a data acquisition device, a device internal information storage unit, a recipe storage unit, a QC value prediction unit, a wafer determination unit, a recipe selection unit, and a measurement device.
摘要翻译：质量控制系统具有：QC值存储单元，数据获取装置，设备内部信息存储单元，配方存储单元，QC值预测单元，晶片确定单元，配方选择单元和测量装置。

7. 发明申请

US20060235560A1 Quality control system, quality control method, and method of lot-to-lot wafer processing 失效
标题翻译：质量控制体系，质量控制方法，批量批处理方法
公开(公告)号：US20060235560A1
公开(公告)日：2006-10-19
申请号：US11395276
申请日：2006-04-03
申请人： Akira Ogawa , Yukihiro Ushiku , Tomomi Ino
发明人： Akira Ogawa , Yukihiro Ushiku , Tomomi Ino
IPC分类号： G06F19/00
CPC分类号： G05B19/41875 , G05B2219/32097 , G05B2219/32194 , G05B2219/45031 , H01L21/67253 , Y02P90/20 , Y02P90/22
摘要： A quality control system has: a QC value storage unit that stores QC actual measurements of past lots, a data acquisition device that acquires the device internal information of a processing device processing an intended lot, a device internal information storage unit that stores the device internal information, a recipe storage unit that stores a plurality of recipes classified by the distribution of sampling density within a wafer, a QC value prediction unit that predicts a QC prediction value of the intended lot using the device internal information and the QC actual measurements, a wafer determination unit that determines a sample wafer to be measured from among a plurality of wafers constituting the intended lot using the QC prediction value, a recipe selection unit that selects an application recipe to be applied to the sample wafer from among the plurality of recipes using the QC prediction value, and a measurement device that makes a QC measurement on the sample wafer using the application recipe and stores the measurement result in the QC value storage unit.
摘要翻译：质量控制系统具有：存储过去批次的QC实际测量值的QC值存储单元，获取处理预期批次的处理设备的设备内部信息的数据获取设备，存储设备内部的设备内部信息存储单元信息，存储通过晶片内的采样密度分布分类的多个配方的食谱存储单元，使用设备内部信息和QC实际测量来预测预期批次的QC预测值的QC值预测单元，晶片确定单元，其使用QC预测值从构成预期批次的多个晶片中确定待测量的样品晶片;配方选择单元，从多个配方中选择应用于样品晶片的应用配方，所述配方选择单元使用 QC预测值，以及使用该测量装置对样品晶片进行QC测量应用配方，并将测量结果存储在QC值存储单元中。

8. 发明申请

US20060281281A1 Method of inspecting semiconductor wafer 失效
公开(公告)号：US20060281281A1
公开(公告)日：2006-12-14
申请号：US11444301
申请日：2006-06-01
申请人： Katsujiro Tanzawa , Norihiko Tsuchiya , Junji Sugamoto , Yukihiro Ushiku
发明人： Katsujiro Tanzawa , Norihiko Tsuchiya , Junji Sugamoto , Yukihiro Ushiku
IPC分类号： H01L21/66 , H01L21/30
CPC分类号： H01L22/12 , G01N21/9501
摘要： A method of inspecting a semiconductor wafer, comprises removing a device structure film on the semiconductor wafer with a chemical solution to expose a crystal surface of the semiconductor wafer; coating a protected area, which is a part of the crystal surface of the semiconductor wafer, with a mask material for protecting the crystal surface of the semiconductor wafer; etching the semiconductor wafer selectively, thereby making a crystal defect in a non-protected area, which is a part of the crystal surface of the semiconductor wafer that is not coated with the mask material, appear after the crystal surface is coated with the mask material; removing the mask material after the selective etching; carrying out quantitative measurement of the protected area and the non-protected area using an optical defect inspection apparatus or a beam-type defect inspection apparatus; and calculating the number of crystal defects of the semiconductor wafer base on the result of the measurement.

9. 发明申请

US20060085165A1 Method for determining a failure of a manufacturing condition, system for determining a failure of a manufacuring condition and method for manufacturing an industrial product 审中-公开
标题翻译：用于确定制造条件故障的方法，用于确定制造条件故障的系统和用于制造工业产品的方法
公开(公告)号：US20060085165A1
公开(公告)日：2006-04-20
申请号：US11236719
申请日：2005-09-28
申请人： Yukihiro Ushiku , Tomomi Ino
发明人： Yukihiro Ushiku , Tomomi Ino
IPC分类号： G06F11/30
CPC分类号： G05B23/024
摘要： A method for determining a failure of a manufacturing condition, includes creating waveforms implemented by respective first data strings of first characteristic variables corresponding to operation parameter data of manufacturing apparatuses which execute manufacturing processes of products under respective manufacturing conditions for the products; classifying the first data strings that are analogous to each other into groups based on a correlation of the waveforms; creating a first visualized data table visualizing magnitude correlations between the first characteristic variables for each of the groups; adding second data strings of second characteristic variables to the groups, the second characteristic variables corresponding to workmanship data representing measurement and inspection results of the products; and creating a second visualized data table visualizing magnitude correlations between the second characteristic variables for each of the groups.
摘要翻译：一种用于确定制造条件故障的方法，包括：通过对与产品的相应制造条件下执行产品的制造过程的制造装置的操作参数数据相对应的第一特征变量的各个第一数据串实现的波形; 基于波形的相关性将彼此类似的第一数据串分组成组; 创建第一可视化数据表可视化每个组的第一特征变量之间的幅度相关性; 将第二特征变量的第二数据串添加到组中，对应于表示产品的测量和检查结果的工艺数据的第二特征变量; 以及创建第二可视化数据表，其可视化每个组的第二特征变量之间的幅度相关性。

10. 发明授权

US5844278A Semiconductor device having a projecting element region 失效
标题翻译：具有突出元件区域的半导体器件
公开(公告)号：US5844278A
公开(公告)日：1998-12-01
申请号：US527636
申请日：1995-09-13
申请人： Tomohisa Mizuno , Yukihiro Ushiku , Makoto Yoshimi , Mamoru Terauchi , Shigeru Kawanaka
发明人： Tomohisa Mizuno , Yukihiro Ushiku , Makoto Yoshimi , Mamoru Terauchi , Shigeru Kawanaka
IPC分类号： H01L29/78 , H01L21/336 , H01L29/10 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/76 , H01L29/94 , H01L31/062
CPC分类号： H01L29/66575 , H01L29/1083 , H01L29/41725 , H01L29/4983 , H01L29/66795 , H01L29/7851
摘要： The present invention provides a semiconductor device which includes a substrate having a projection-shaped semiconductor element region, a gate electrode formed through a gate insulating film on the upper face and side face of the element region, and a first conductivity type source region and drain region provided in a manner to form a channel region on the upper face of the element region across the gate electrode, and which has a high concentration impurity region containing a second conductivity type impurity at a concentration higher than that on the surface of the channel region in the central part of the projection-shaped semiconductor element region.
摘要翻译：本发明提供一种半导体器件，其包括具有突起状半导体元件区域的基板，通过在元件区域的上表面和侧面上的栅极绝缘膜形成的栅电极，以及第一导电型源极区域和漏极该区域以跨越该栅电极的该元件区域的上表面上形成沟道区域的方式设置，并且具有含有比沟道区域表面上的浓度高的第二导电型杂质的高浓度杂质区域在突起状半导体元件区域的中央部。

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