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51. 发明申请

US20080038448A1 Chemical resistant semiconductor processing chamber bodies 审中-公开
标题翻译：耐化学腐蚀的半导体加工室体
公开(公告)号：US20080038448A1
公开(公告)日：2008-02-14
申请号：US11731075
申请日：2007-03-30
申请人： Arnold Kholodenko , Wing Cheng , Helen Cheng , Mark Mardelboym , Grant Peng , Katrina Mikhaylichenko
发明人： Arnold Kholodenko , Wing Cheng , Helen Cheng , Mark Mardelboym , Grant Peng , Katrina Mikhaylichenko
IPC分类号： B05C11/00 , B05D3/00
CPC分类号： H01L21/67051 , H01L21/6719
摘要： In one embodiment a chamber body enabling semiconductor processing equipment to be at least partially housed in the chamber body, the semiconductor processing equipment being configured to process a substrate using fluids is disclosed. The chamber body being comprised of a base material implemented to form the chamber body, the chamber body defined by at least a bottom surface and wall surfaces that are integrally connected to the bottom surface to enable capture of overflows of fluids during the processing of the substrate over the chamber body. Additionally, the base material is metallic. The chamber body also has a primer coat material disposed over and on the base material. The primer coat material has metallic constituents to define an integrated bond with the base material along with non-metallic constituents. The chamber body further includes a main coat material disposed over and on the primer coat material. The main coat material being defined from non-metallic constituents, the non-metallic constituents of the main coat material defining an integrated bond with the primer coat material. The main coat material defined to completely overlie all the metallic constituents of the primer coat.
摘要翻译：在一个实施例中，公开了使半导体处理设备能够至少部分地容纳在室主体中的室主体，半导体处理设备被配置为使用流体处理衬底。腔室主体包括被实施成形成腔室主体的基底材料，至少由底部表面限定的腔体主体和与底部表面一体连接的壁表面，以在衬底的处理期间捕获流体溢出物在房间的身体。另外，基材是金属的。腔室主体还具有设置在基底材料上方的底漆涂层材料。底涂层材料具有金属成分，以与非金属组分一起界定与基材的整体结合。室主体还包括设置在底漆涂层材料上和之上的主涂层材料。主涂层材料由非金属组分定义，主涂层材料的非金属组分限定与底漆涂层材料的整体结合。主涂层材料被定义为完全覆盖底漆涂层的所有金属成分。

52. 发明申请

US20070137573A1 Apparatus for an optimized plasma chamber grounded electrode assembly 有权
标题翻译：用于优化等离子体室接地电极组件的装置
公开(公告)号：US20070137573A1
公开(公告)日：2007-06-21
申请号：US11316054
申请日：2005-12-21
申请人： Arnold Kholodenko , Anwar Husain
发明人： Arnold Kholodenko , Anwar Husain
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32532 , H01J37/32055 , H01J37/32082 , H01J37/32091 , H01J37/32174 , H01J37/32458 , H01J37/32559 , H01J37/32577 , H01J37/32651 , H01J37/32724 , H01L21/67069
摘要： An electrode assembly configured to provide a ground path for a plasma processing chamber of a plasma processing system is disclosed. The apparatus includes an electrode configured to be exposed to a plasma. The apparatus also includes a heater plate disposed above the electrode, wherein the heater plate is configured to heat the electrode. The apparatus further includes a cooling plate disposed above the heater plate, wherein the cooling plate is configured to cool the electrode. The apparatus also includes a plasma chamber lid configured to confine the plasma in the plasma chamber, wherein the plasma chamber lid includes a ground. The apparatus further includes a clamp ring configured to secure the electrode, the heater plate, and the cooling plate to the plasma chamber lid, the clamp ring is further configured to provide the ground path from the electrode to the chamber lid.
摘要翻译：公开了一种构造成为等离子体处理系统的等离子体处理室提供接地路径的电极组件。该装置包括被配置为暴露于等离子体的电极。该设备还包括设置在电极上方的加热板，其中加热板被配置为加热电极。该装置还包括设置在加热板上方的冷却板，其中冷却板构造成冷却电极。所述装置还包括构造成将等离子体限制在等离子体室中的等离子体室盖，其中等离子体室盖包括地面。该装置还包括夹紧环，其构造成将电极，加热器板和冷却板固定到等离子体室盖上，夹紧环进一步构造成提供从电极到室盖的接地路径。

53. 发明授权

US06721162B2 Electrostatic chuck having composite dielectric layer and method of manufacture 有权
标题翻译：具有复合介电层的静电吸盘及其制造方法
公开(公告)号：US06721162B2
公开(公告)日：2004-04-13
申请号：US10095914
申请日：2002-03-12
申请人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
发明人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
IPC分类号： H02N1300
CPC分类号： H01J37/321 , C23C16/4586 , H01J2237/2001 , H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.
摘要翻译：静电吸盘具有能够带电的电极，以静电保持基板。复合层覆盖电极。复合层包括（1）覆盖电极的中心部分的第一电介质材料，和（2）覆盖电极的周边部分的第二电介质材料，第二电介质材料的组成不同于第一电介质的组成材料。卡盘在等离子体处理室中可用于处理诸如半导体晶片的基板。

54. 发明授权

US06503368B1 Substrate support having bonded sections and method 失效
标题翻译：具有接合部分和方法的基板支撑
公开(公告)号：US06503368B1
公开(公告)日：2003-01-07
申请号：US09607533
申请日：2000-06-29
申请人： Arnold Kholodenko , Vijay Parkhe , Shamouil Shamouilian , You Wang , Wing L. Cheng , Alexander M. Veytser
发明人： Arnold Kholodenko , Vijay Parkhe , Shamouil Shamouilian , You Wang , Wing L. Cheng , Alexander M. Veytser
IPC分类号： C23C1600
CPC分类号： H01L21/67103 , C23C16/4581 , C23C16/4586 , H01J2237/2001
摘要： A substrate support 55 comprises first, second and third sections 88, 90, 92 connected to one another by first and second bonds 106, 108, one of the sections comprises a surface 75 adapted to receive a substrate 25. The first bond 106 comprises a first bonding material and the second bond 108 comprises a second bonding material. In one version, the first bonding material is capable of bonding surfaces when heated to a first temperature and the second bonding material is capable of bonding surfaces when heated to a second temperature.
摘要翻译：衬底支撑件55包括通过第一和第二键106,108彼此连接的第一，第二和第三部分88,90,92，其中一个部分包括适于接收衬底25的表面75.第一结合106包括第一接合材料和第二接合108包括第二接合材料。在一个版本中，第一接合材料能够在被加热到第一温度时粘合表面，并且第二接合材料能够在被加热到第二温度时粘合表面。

55. 发明授权

US06471822B1 Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma 失效
标题翻译：磁阻等离子体磁感应耦合等离子体反应器
公开(公告)号：US06471822B1
公开(公告)日：2002-10-29
申请号：US09263001
申请日：1999-03-05
申请人： Gerald Yin , Peter Loewenhardt , Arnold Kholodenko , Hong Chin Shan , Chii Lee , Dan Katz
发明人： Gerald Yin , Peter Loewenhardt , Arnold Kholodenko , Hong Chin Shan , Chii Lee , Dan Katz
IPC分类号： H05H100
CPC分类号： H01J37/321 , H01J37/32669
摘要： The present invention provides a plasma reactor having a plasma source chamber capable of generating a high density plasma typically utilizing a helicon wave. The plasma is delivered to a process chamber having a workpiece. The present invention may provide a plurality of magnets, each being located longitudinally around an axis perpendicular to the plane of the workpiece to form a magnetic bucket that extends the length of the side wall of the processing chamber and across a workpiece insertion opening and a vacuum pump opening. The magnetic bucket of the present invention may be formed so that the pedestal need not be raised to be within the bucket, or may be formed by permanent magnets oriented with one pole of each magnet facing the interior of the processing chamber, or with opposite poles of adjacent magnets facing each other, thereby forming cusps around the axis perpendicular to the plane of the workpiece. Current carrying conductors may generate all or part of the magnetic bucket. The present invention may provide an inner wall member secured within the processing chamber. All or a portion of the inner wall may be grounded to provide a well defined anode for bias power that is applied to the workpiece pedestal, and may be heated so that deposits do not cause its impedance to drift.
摘要翻译：本发明提供一种等离子体反应器，其具有能够产生通常利用螺旋波的高密度等离子体源室。将等离子体输送到具有工件的处理室。本发明可以提供多个磁体，每个磁体纵向地围绕垂直于工件的平面的轴定位，以形成一个磁性铲斗，其延伸处理室的侧壁的长度并穿过工件插入口和真空泵开口。本发明的磁性铲斗可以形成为使得底座不需要升高到铲斗内部，或者可以由定向为每个磁体的一极的方向定向的永久磁铁形成，面对处理室的内部，或者具有相对的极相邻的磁体彼此面对，从而围绕垂直于工件的平面的轴线形成尖端。载流导体可以产生磁桶的全部或部分。本发明可以提供固定在处理室内的内壁件。内壁的全部或一部分可以被接地以提供良好限定的用于施加到工件基座的偏置功率的阳极，并且可以被加热，使得沉积物不会使其阻抗漂移。

56. 发明授权

US06464790B1 Substrate support member 失效
标题翻译：基材支撑件
公开(公告)号：US06464790B1
公开(公告)日：2002-10-15
申请号：US09527341
申请日：2000-03-17
申请人： Semyon Sherstinsky , Arnold Kholodenko , Calvin Augason , Samuel Wilson , Michael Phillips , Leonel Zuniga
发明人： Semyon Sherstinsky , Arnold Kholodenko , Calvin Augason , Samuel Wilson , Michael Phillips , Leonel Zuniga
IPC分类号： C23C1600
CPC分类号： C23C16/45521 , C23C16/4585 , C23C16/4586 , C30B25/12 , H01L21/6838
摘要： The present invention generally provides a support member adapted to provide vacuum chucking. In one aspect, a support member having an upper surface having an outer, raised portion defining an inner, recessed portion is provided. The inner recessed portion is in fluid communication with a vacuum supply. The support member may include a plurality of raised support portions having one or more recessed portions adjacent thereto, the raised support portions having equal heights above the recessed portions. The transition between the raised portions and the recessed portions is gradual and the orifices formed by the holes extending through the upper surface of the substrate support are rounded to eliminate sharp edges and rapid changes in height at the upper surface.
摘要翻译：本发明通常提供适于提供真空夹紧的支撑构件。一方面，提供具有上表面的支撑构件，其具有限定内凹部的外凸起部。内凹部与真空源流体连通。支撑构件可以包括多个凸起的支撑部分，其具有与其相邻的一个或多个凹部，所述凸起支撑部分在凹部上方具有相同的高度。凸起部分和凹陷部分之间的过渡是渐进的，并且由延伸穿过衬底支撑件的上表面的孔形成的孔是圆形的，以消除上边缘处的尖锐边缘和高度的快速变化。

57. 发明授权

US06310755B1 Electrostatic chuck having gas cavity and method 有权
标题翻译：具有气腔和方法的静电吸盘
公开(公告)号：US06310755B1
公开(公告)日：2001-10-30
申请号：US09307215
申请日：1999-05-07
申请人： Arnold Kholodenko , Shamouil Shamouilian , You Wang , Wing L. Cheng , Alexander M. Veytser , Surinder S. Bedi , Kadthala R. Narendrnath , Semyon L. Kats , Dennis S. Grimard , Ananda H. Kumar
发明人： Arnold Kholodenko , Shamouil Shamouilian , You Wang , Wing L. Cheng , Alexander M. Veytser , Surinder S. Bedi , Kadthala R. Narendrnath , Semyon L. Kats , Dennis S. Grimard , Ananda H. Kumar
IPC分类号： H01G2300
CPC分类号： C04B35/565 , C04B35/185 , C04B35/806 , C04B37/006 , C04B37/026 , C04B41/009 , C04B41/5155 , C04B41/88 , C04B2235/402 , C04B2235/5248 , C04B2235/616 , C04B2235/96 , C04B2235/9607 , C04B2237/121 , C04B2237/343 , C04B2237/365 , C04B2237/366 , C04B2237/405 , C04B2237/60 , C22C29/00 , C22C2204/00 , H01L21/67109 , H01L21/6831 , H01L21/6833 , C04B38/00 , C04B41/4523
摘要： An electrostatic chuck 55 has an electrostatic member 100 including a dielectric 115 having a surface 120 adapted to receive the substrate 30. The dielectric 115 covers an electrode 105 that is chargeable to electrostatically hold the substrate 30. A support 190 below the electrostatic member 100 has a cavity 300 adapted to hold a gas to serve as a thermal insulator to regulate the flow of heat from the electrostatic chuck 55 to a surface 120 of the chamber 25. The cavity 300 has a cross-sectional profile that is shaped to provide a predetermined temperature profile across the substrate 30.
摘要翻译：静电吸盘55具有静电构件100，静电构件100包括具有适于接纳衬底30的表面120的电介质115.电介质115覆盖电极105，电极105可充电以静电保持衬底30.静电构件100下方的支撑件190具有空腔300适于保持气体以用作热绝缘体，以调节从静电卡盘55到腔室25的表面120的热量流动。空腔300具有截面轮廓，其形状设置成提供预定的跨越衬底30的温度分布。

58. 发明授权

US6095084A High density plasma process chamber 失效
标题翻译：高密度等离子体处理室
公开(公告)号：US6095084A
公开(公告)日：2000-08-01
申请号：US893599
申请日：1997-07-14
申请人： Shamouil Shamouilian , Ananda H. Kumar , Arnold Kholodenko , Dennis S. Grimard , Jonathan D. Mohn , Michael G. Chafin , Kenneth S. Collins
发明人： Shamouil Shamouilian , Ananda H. Kumar , Arnold Kholodenko , Dennis S. Grimard , Jonathan D. Mohn , Michael G. Chafin , Kenneth S. Collins
IPC分类号： C23C16/00
CPC分类号： C23C16/00
摘要： A process chamber 55 for processing a semiconductor substrate 60 in a plasma, comprises a process gas distributor 100 for distributing process gas into a plasma zone 65 in the chamber. An inductor antenna 135 is used to form an inductive plasma from the process gas in the plasma zone. A primary bias electrode 145 on a ceiling 140 of the chamber 55 has a conducting surface 150 exposed to the plasma zone 65. A dielectric member 155 comprising a power electrode 165 embedded therein, has a receiving surface for receiving a substrate 60. A secondary bias electrode 170 below the dielectric member 155 has a conducting surface 175 exposed to the plasma zone 65. An electrode voltage supply 180 maintains the power electrode 165, primary bias electrode 145, and secondary bias electrode 170, at different electrical potentials to provide a high density, highly directional, plasma in the plasma zone 65 of the chamber 55.
摘要翻译：用于处理等离子体中的半导体衬底60的处理室55包括用于将处理气体分配到室中的等离子体区65中的处理气体分配器100。电感天线135用于从等离子体区域中的处理气体形成感应等离子体。腔室55的天花板140上的主偏压电极145具有暴露于等离子体区域65的导电表面150.包括嵌入其中的功率电极165的电介质构件155具有用于接收衬底60的接收表面。次级偏压在电介质构件155下方的电极170具有暴露于等离子体区65的导电表面175.电极电压源180将功率电极165，初级偏压电极145和次级偏置电极170保持在不同的电位以提供高密度，在室55的等离子体区65中的高度方向性的等离子体。

59. 发明授权

US09111968B2 Plasma processing chamber with a grounded electrode assembly 有权
标题翻译：具有接地电极组件的等离子体处理室
公开(公告)号：US09111968B2
公开(公告)日：2015-08-18
申请号：US12825268
申请日：2010-06-28
申请人： Arnold Kholodenko , Anwer Husain
发明人： Arnold Kholodenko , Anwer Husain
IPC分类号： C23C16/00 , H01L21/67 , H01J37/32
CPC分类号： H01J37/32532 , H01J37/32055 , H01J37/32082 , H01J37/32091 , H01J37/32174 , H01J37/32458 , H01J37/32559 , H01J37/32577 , H01J37/32651 , H01J37/32724 , H01L21/67069
摘要： An optimized plasma processing chamber configured to provide a current path is provided. The optimized plasma processing chamber includes at least an upper electrode, a powered lower electrode, a heating plate, a cooling plate, a plasma chamber lid, and clamp ring. Both the heating plate and the cooling plate are disposed above the upper electrode whereas the heating plate is configured to heat the upper electrode while the cooling plate is configured to cool the upper electrode. The clamp ring is configured to secure the upper electrode to a plasma chamber lid and to provide a current path from the upper electrode to the plasma chamber lid. A pocket may be formed between the clamp ring and the upper electrode to hold at least the heater plate, wherein the pocket is configured to allow longitudinal and lateral tolerances for thermal expansion of the heater plate from repetitive thermal cycling.
摘要翻译：提供了一种被配置为提供电流路径的优化等离子体处理室。优化的等离子体处理室至少包括上电极，动力下电极，加热板，冷却板，等离子体室盖和夹环。加热板和冷却板都设置在上电极的上方，而加热板构造成加热上电极，同时冷却板构造为冷却上电极。夹紧环被构造成将上部电极固定到等离子体室盖并且提供从上部电极到等离子体室盖的电流路径。可以在夹紧环和上部电极之间形成一个口袋，以至少保持加热板，其中该口袋构造成允许加热器板的热膨胀的重复热循环的纵向和横向公差。

60. 发明授权

US08292697B2 Method for manufacturing a hybrid composite wafer carrier for wet clean equipment 失效
标题翻译：湿式清洁设备用混合复合晶片载体的制造方法
公开(公告)号：US08292697B2
公开(公告)日：2012-10-23
申请号：US13403839
申请日：2012-02-23
申请人： Wing Lau Cheng , Helen Cheng, legal representative , Arnold Kholodenko
发明人： Wing Lau Cheng , Arnold Kholodenko
IPC分类号： B24B1/00
CPC分类号： B32B5/26 , B32B5/28 , B32B27/04 , H01L21/67051 , H01L21/67346 , H01L21/67748 , H01L21/68764 , Y10S269/90 , Y10S269/901 , Y10T428/237 , Y10T428/24995 , Y10T428/31515
摘要： A carrier structure for supporting a substrate when being processed by passing the carrier through a meniscus formed by upper and lower proximity heads is described. A method of manufacturing the carrier further described. The method includes forming a composite frame having a carbon fiber core, a top sheet, a bottom sheet, a layer of aramid fabric between the top sheet and the core and a second layer of aramid fabric between the bottom sheet and the core. The top sheet and the bottom are each formed from a polymer material. The method further includes forming an opening sized for receiving a substrate and providing a plurality of support pins extending into the opening for supporting the substrate within the opening. The opening is formed slightly larger than the substrate such that a gap exists between the substrate and the opening.
摘要翻译：描述了当通过使载体通过由上下接近头形成的弯月面而被处理时用于支撑基板的载体结构。进一步描述制造载体的方法。该方法包括在顶片和芯之间形成具有碳纤维芯，顶片，底片，芳族聚酰胺织物层的复合框架和在底片和芯之间的第二层芳族聚酰胺织物。顶片和底部均由聚合物材料形成。该方法还包括形成开口，该开口的尺寸设置成用于接收基底并提供延伸到开口中的多个支撑销，以支撑开口内的基底。该开口形成为稍微大于基板，使得在基板和开口之间存在间隙。

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