会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 54. 发明授权
    • Method to form gate oxides of different thicknesses on a silicon substrate
    • 在硅衬底上形成不同厚度的栅极氧化物的方法
    • US06235591B1
    • 2001-05-22
    • US09425904
    • 1999-10-25
    • Narayanan BalasubramanianYelehanka Ramachandamurthy PradeepJia Zhen ZhengAlan Cuthbertson
    • Narayanan BalasubramanianYelehanka Ramachandamurthy PradeepJia Zhen ZhengAlan Cuthbertson
    • H01L218234
    • H01L21/823462
    • A method of fabricating gate oxides of different thicknesses has been achieved. Active area isolations are provided in a silicon substrate to define low voltage sections and high voltage sections in the silicon substrate. A sacrificial oxide layer is formed overlying the silicon substrate. A silicon nitride layer is deposited overlying the sacrificial oxide layer. A masking oxide layer is deposited overlying the silicon nitride layer. The masking oxide layer is patterned to form a hard mask overlying the low voltage sections. The silicon nitride layer is etched through where exposed by the hard mask thereby exposing the sacrificial oxide layer overlying the high voltage section. The exposed sacrificial oxide layer and the hard mask are etched away. A thick gate oxide layer is grown overlying the silicon substrate in the high voltage section. The silicon nitride layer is etched away. The sacrificial oxide layer overlying the low voltage section is etched away. A thin gate oxide layer is grown overlying the silicon substrate in the low voltage section, and the integrated circuit device is completed.
    • 已经实现了制造不同厚度的栅极氧化物的方法。 在硅衬底中提供有源区隔离以限定硅衬底中的低电压部分和高压部分。 在硅衬底上形成牺牲氧化层。 覆盖在牺牲氧化物层上的氮化硅层被沉积。 覆盖氮化硅层的掩模氧化物层被沉积。 图案化掩模氧化物层以形成覆盖低电压部分的硬掩模。 蚀刻氮化硅层,通过硬掩模露出,从而暴露覆盖高压部分的牺牲氧化物层。 暴露的牺牲氧化物层和硬掩模被蚀刻掉。 在高压部分中生长覆盖硅衬底的厚栅氧化层。 蚀刻掉氮化硅层。 覆盖低电压部分的牺牲氧化物层被蚀刻掉。 在低电压部分中生长覆盖硅衬底的薄栅氧化层,并且完成集成电路器件。
    • 58. 发明授权
    • Peptide-based compounds
    • 基于肽的化合物
    • US08258101B2
    • 2012-09-04
    • US12814621
    • 2010-06-14
    • Alan Cuthbertson
    • Alan Cuthbertson
    • A61K38/12C07K5/12
    • C07K14/70546A61K51/082C07K7/06
    • This invention relates to new peptide-based compounds and their use in therapeutically effective treatments as well as for diagnostic imaging techniques. More specifically the invention relates to the use of such peptide-based compounds used as targeting vectors that bind to receptors associated with angiogenesis, in particular the αvβ3 integrin receptor. Such contrast agents may thus be used for diagnosis of for example malignant diseases, heart diseases, inflammation-related diseases, rheumatoid arthritis and Kaposi's sarcoma. Moreover such compounds may also be used in therapeutic treatment of these diseases.
    • 本发明涉及新的基于肽的化合物及其在治疗有效治疗以及诊断成像技术中的用途。 更具体地,本发明涉及用作与血管生成相关的受体结合的靶向载体的这种基于肽的化合物的用途,特别是αv&bgr 3整合素受体。 因此,这样的造影剂可用于诊断例如恶性疾病,心脏病,炎症相关疾病,类风湿性关节炎和卡波西氏肉瘤。 此外,这些化合物也可用于治疗这些疾病。