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51. 发明授权

US07475455B2 Fiber-made surface fastener for reducing unpleasant noise at peeling-off and product provided therewith 失效
标题翻译：纤维制成的表面紧固件，用于减少剥离时产生的不愉快的噪音和提供的产品
公开(公告)号：US07475455B2
公开(公告)日：2009-01-13
申请号：US10536474
申请日：2003-11-13
申请人： Akira Ishibashi , Teiichi Murayama , Mamoru Tanaka , Shintaro Ohsugi
发明人： Akira Ishibashi , Teiichi Murayama , Mamoru Tanaka , Shintaro Ohsugi
IPC分类号： A44B18/00
CPC分类号： A44B18/0069 , A44B18/0003 , Y10T24/27
摘要： This invention relates to a fiber-made surface fastener comprising joining faces each in which a plurality of fiber-made engaging elements are provided on one surface of each flat base fabric. By specifying a structure and composition yarns of the base fabric of the same surface fastener, the ratio (A/B) of an area A of a range in which sound spectrum of a peeling-off sound Fourier-transformed in a range of 100 Hz to 15000 Hz is 100 Hz to 3000 Hz to an area B of a range in which sound spectrum of a peeling-off sound Fourier-transformed in a range of 100 Hz to 15000 Hz is 3000 Hz to 15000 Hz is 0.4 or more. Consequently, tone of a sound generated when the surface fastener is peeled off and when the surface fastener attached on a product is peeled off is shifted to a low tone side so as to reduce an uncomfortable sound to a lower tone thereby reducing a feeling of discomfort.
摘要翻译：本发明涉及一种纤维制成的表面紧固件，其包括接合面，每个平面织物的一个表面上设有多个纤维制的接合元件。通过规定相同表面紧固件的基底织物的结构和组成纱线，在100Hz的范围内傅里叶变换的剥离声的声谱的范围A的面积A的比（A / B）到15000Hz的范围为100Hz〜3000Hz，其范围为100Hz〜15000Hz范围内的傅立叶变换为3000Hz〜15000Hz的剥离声的声谱的范围B为0.4以上。因此，当表面紧固件被剥离并且当附着在产品上的表面紧固件被剥离时产生的声音的色调被转移到低色调侧，以将不舒服的声音降低到较低的色调，从而减少不适感。

52. 发明申请

US20060088029A1 Functional device, manufacturing method thereof, functional system and functional material 审中-公开
标题翻译：功能器件及其制造方法，功能体系及功能材料
公开(公告)号：US20060088029A1
公开(公告)日：2006-04-27
申请号：US11247125
申请日：2005-10-11
申请人： Akira Ishibashi
发明人： Akira Ishibashi
IPC分类号： H04L12/50
CPC分类号： B82Y10/00 , G06N99/007
摘要： A functional device, a manufacturing method thereof, functional system and functional material are provided. A functional device is formed by coupling a first structure formed by local interaction and a second structure formed according to a predetermined global rule via a third structure having an anisotropic configuration. The third structure may be made by stacking two superlattice thin pieces, each split from a one-dimensional superlattice in form of a periodical lamination of conductive layers and dielectric layers, by rotating one from the other by 90 degrees.
摘要翻译：提供了功能装置及其制造方法，功能系统和功能材料。通过将由局部相互作用形成的第一结构和根据预定的全局规则形成的第二结构经由具有各向异性构造的第三结构来形成功能器件。第三结构可以通过将两个超晶格薄片彼此分离90度，通过层叠两个超晶格薄片，每个超晶格薄片通过导电层和电介质层的周期层压形式从一维超晶格分离。

53. 发明授权

US07001532B2 Electro-rheological composition 失效
公开(公告)号：US07001532B2
公开(公告)日：2006-02-21
申请号：US10299898
申请日：2002-11-20
申请人： Akira Ishibashi , Takeshi Fukuda , Ryoichi Hanaoka , Shinzo Takata
发明人： Akira Ishibashi , Takeshi Fukuda , Ryoichi Hanaoka , Shinzo Takata
IPC分类号： C10M171/00 , C10M169/04
CPC分类号： C10M169/04 , C10M171/001 , C10M2201/062 , C10M2229/0515 , C10N2210/03 , C10N2210/04 , C10N2220/082
摘要： In an electro-rheological composition comprising an electrical insulating medium and solid particles dispersed therein, insulating solid particles possessed of morphological anisotropy are used as the solid particles. In a preferred embodiment, the insulating solid particles mentioned above are plate-like insulating solid particles, preferably plate-like insulating solid particles having a diameter (particle diameter) not less than 1 μm, more preferably plate-like aluminum oxide particles having a diameter not less than 1 μm. In another preferred embodiment, the insulating solid particles which have undergone a surface treatment with organic molecules or a semiconducting inorganic material, particularly the insulating solid particles having a metal oxide such as tin oxide and titanium oxide adhered to the surfaces thereof are used as the particles. Still another preferred embodiment is the ER composition of which electrical insulating medium is gelled.

54. 发明申请

US20050038820A1 Processing method and system of data management for IC card 审中-公开
标题翻译： IC卡数据管理的处理方法和系统
公开(公告)号：US20050038820A1
公开(公告)日：2005-02-17
申请号：US10951958
申请日：2004-09-27
申请人： Masahiro Sakashita , Masayuki Nakagawa , Akira Ishibashi , Takao Yoden , Masashi Takeda
发明人： Masahiro Sakashita , Masayuki Nakagawa , Akira Ishibashi , Takao Yoden , Masashi Takeda
IPC分类号： G07F7/10 , G06F7/00
CPC分类号： G07F7/1008 , G06Q20/341 , G06Q20/355 , G07F7/1025
摘要： A method and a system wherein IC card information can be changed in either of two ways is provided. The information stored in an IC card can be changed independently of the information that a center facility maintains, and then the corresponding IC card information maintained by the center facility is updated to reflect the changes made in the IC card. Alternatively, the IC card information maintained in the center facility is changed, and then the corresponding information in the IC card is updated to reflect those changes.
摘要翻译：提供了一种方法和系统，其中可以以两种方式之一来改变IC卡信息。存储在IC卡中的信息可以独立于中心设备维护的信息进行更改，然后更新由中心设备维护的相应IC卡信息，以反映IC卡中所做的更改。或者，改变保存在中心设施中的IC卡信息，然后更新IC卡中的相应信息以反映这些变化。

55. 发明授权

US06805296B2 Processing method and system of data management for IC card 失效
标题翻译： IC卡数据管理的处理方法和系统
公开(公告)号：US06805296B2
公开(公告)日：2004-10-19
申请号：US09896933
申请日：2001-06-28
申请人： Masahiro Sakashita , Masayuki Nakagawa , Akira Ishibashi , Takao Yoden , Masashi Takeda
发明人： Masahiro Sakashita , Masayuki Nakagawa , Akira Ishibashi , Takao Yoden , Masashi Takeda
IPC分类号： G06K1900
CPC分类号： G07F7/1008 , G06Q20/341 , G06Q20/355 , G07F7/1025
摘要： In accordance with the invention, a method and system is provided wherein IC card information can be changed in either of two ways: (1) the information stored in IC card is changed independently of the information that the center facility maintains, and then the corresponding IC card information maintained by the center facility is updated to reflect the changes made in the IC card, and (2) the IC card information maintained in the center apparatus is changed, and then the corresponding information in the IC card is updated to reflect the changes made in the center apparatus.
摘要翻译：根据本发明，提供了一种方法和系统，其中IC卡信息可以通过以下两种方式之一改变：（1）存储在IC卡中的信息独立于中心设备维护的信息而改变，然后相应地更新由中心设备维护的IC卡信息以反映IC卡中所做的更改，（2）改变中心设备中保存的IC卡信息，然后更新IC卡中的对应信息，以反映中心设备改变。

56. 发明授权

US06321983B1 Method for managing life cycles and system for the same 失效
标题翻译：管理生命周期和系统的方法
公开(公告)号：US06321983B1
公开(公告)日：2001-11-27
申请号：US09360687
申请日：1999-07-26
申请人： Takahiro Katayanagi , Katsufumi Mihara , Naoki Takahashi , Akira Ishibashi , Shuji Soga , Tetsuo Kusuzaki
发明人： Takahiro Katayanagi , Katsufumi Mihara , Naoki Takahashi , Akira Ishibashi , Shuji Soga , Tetsuo Kusuzaki
IPC分类号： G06K500
CPC分类号： G06Q10/06 , B29B2017/0089
摘要： A method and system for managing the overall life cycle of a product from its manufacture to its destruction or recycling. To the product is affixed a storage medium storing a product identifier uniquely identifying the product and information about the parts that are contained in the product. At each site that the product passes through during its life cycle, product life cycle information is recorded in the storage medium affixed to the product. When the product is to be destroyed or recycled, the information stored in the recording medium is used to determine the method for destroying or recycling. The product is then destroyed or recycled according to this method.
摘要翻译：一种用于管理产品从其制造到销毁或再循环的整个生命周期的方法和系统。产品附有存储产品标识符的存储介质，该产品标识符唯一地标识产品和关于产品中包含的部件的信息。在产品在其生命周期内通过的每个场所，产品生命周期信息都记录在产品附带的存储介质中。当产品被破坏或回收时，存储在记录介质中的信息用于确定销毁或回收的方法。然后根据这种方法将产品销毁或回收。

57. 发明授权

US5898662A Semiconductor light emitting device, its manufacturing method and optical recording and/or reproducing apparatus 失效
标题翻译：半导体发光器件，其制造方法和光学记录和/或再现装置
公开(公告)号：US5898662A
公开(公告)日：1999-04-27
申请号：US967095
申请日：1997-11-10
申请人： Akira Ishibashi , Satoshi Taniguchi , Tomonori Hino , Takashi Kobayashi , Kazushi Nakano , Norikazu Nakayama
发明人： Akira Ishibashi , Satoshi Taniguchi , Tomonori Hino , Takashi Kobayashi , Kazushi Nakano , Norikazu Nakayama
IPC分类号： H01L33/00 , H01L33/02 , H01L33/28 , H01S5/042 , H01S5/32 , H01S5/327 , H01S5/347 , H01S3/18
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/0087 , H01L33/025 , H01S5/347 , H01S2301/173 , H01S5/0421 , H01S5/3203 , H01S5/327
摘要： A semiconductor light emitting device comprises: a compound semiconductor substrate; an n-type cladding layer on the compound semiconductor substrate; an active layer on the n-type cladding layer; a p-type cladding layer on the active layer: and a p-type contact layer on the p-type cladding layer, the n-type cladding layer, the active layer, the p-type cladding layer and the p-type contact layer being made of II-VI compound semiconductors containing at least one of group II elements selected from the group consisting of Zn, Cd, Mg, Hg and Be and at least one of group VI elements selected from the group consisting of S, Se, Te and O, characterized in that at least the active layer has undulations and at least the p-type layer is flat. A method for manufacturing a semiconductor light emitting device having: a compound semiconductor substrate; an n-type cladding layer on the compound semiconductor substrate; an active layer on the n-type cladding layer; and a p-type cladding layer on the active layer, the n-type cladding layer, the active layer and the p-type cladding layer being made of II-VI compound semiconductors containing at least one of group II elements selected from the group consisting of Zn, Cd, Mg, Hg and Be and at least one of group VI elements selected from the group consisting of S, Se, Te and O, characterized in that the n-type cladding layer, the active layer and said p-type cladding layer are grown by varying, for the respective layers, the ratio of the molecular beam intensity of the group VI element relative to the molecular beam intensity of the group II element.
摘要翻译：一种半导体发光器件包括：化合物半导体衬底; 在化合物半导体衬底上的n型覆层; 在n型包覆层上的有源层; 有源层上的p型覆层和p型覆层的p型接触层，n型包覆层，有源层，p型包覆层和p型接触层由含有选自Zn，Cd，Mg，Hg和Be中的II族元素中的至少一种的II-VI化合物半导体和选自S，Se，Te中的至少一种VI族元素中的至少一种和O，其特征在于至少所述活性层具有起伏并且至少所述p型层是平坦的。一种半导体发光器件的制造方法，其具有：化合物半导体基板; 在化合物半导体衬底上的n型覆层; 在n型包覆层上的有源层; 和p型包覆层，n型包覆层，有源层和p型覆层由含有选自以下的II族元素中的至少一种的II-VI族化合物半导体构成：的Zn，Cd，Mg，Hg和Be以及选自S，Se，Te和O的VI族元素中的至少一种，其特征在于，所述n型包覆层，所述有源层和所述p型通过对于各层改变VI族元素的分子束强度相对于II族元素的分子束强度的比例，生长包覆层。

58. 发明授权

US5764672A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5764672A
公开(公告)日：1998-06-09
申请号：US829064
申请日：1997-03-31
申请人： Masakazu Ukita , Akira Ishibashi
发明人： Masakazu Ukita , Akira Ishibashi
IPC分类号： H01S5/00 , H01S5/024 , H01S5/028 , H01S5/042 , H01S5/062 , H01S5/323 , H01S5/327 , H01S5/343 , H01S5/347 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/024 , H01S5/06209 , H01S5/327 , H01S5/34333 , H01S5/347 , H01S5/0224 , H01S5/028 , H01S5/0421
摘要： A semiconductor laser comprises: a first cladding layer of a first conduction type; an active layer stacked on the first cladding layer; and a second cladding layer of a second conduction type stacked on the active layer. The first cladding layer, the active layer and the second cladding layer are made of II-VI compound semiconductors. Pulse oscillation occurs with characteristics of a threshold current I.sub.th (A), a threshold voltage V.sub.th (V) of the diode composed of the first cladding layer, the active layer and the second cladding layer, a differential resistance R.sub.S (.OMEGA.) of the diode after the rising, a thermal resistance R.sub.t (K/W) and a characteristic temperature T.sub.0 (K). When two amounts .alpha. and .beta. are defined by: .alpha..ident.(R.sub.t /T.sub.0)I.sub.th V.sub.th .beta..ident.(R.sub.t /T.sub.0)R.sub.S I.sub.th.sup.2 the point (.alpha., .beta.) exists in an area on the .alpha.-.beta. plane surrounded by the straight line .alpha.=0, the straight line .beta.=0, and the curve ((21n t-1)/t, (1-ln t)/t.sup.2) having t as a parameter. The semiconductor laser may include a first optical waveguide layer between the first cladding layer and the active layer and include a second optical waveguide layer between the second cladding layer and the active layer, the first optical waveguide layer and the second optical waveguide layer being made of II-VI compound semiconductors. II-VI compound semiconductors making the first cladding layer and the second cladding layer may be a ZnMgSSe compound semiconductor. A semiconductor laser using II-VI compound semiconductors and having the capability of continuous oscillation at high temperatures including the room temperature is provided.
摘要翻译：半导体激光器包括：第一导电类型的第一包层; 堆叠在所述第一包层上的有源层; 以及层叠在有源层上的第二导电类型的第二包覆层。第一包层，有源层和第二包层由II-VI化合物半导体制成。脉冲振荡发生在阈值电流Ith（A），由第一包层，有源层和第二包层组成的二极管的阈值电压Vth（V），二极管的差分电阻RS（OMEGA）上升之后，具有热阻Rt（K / W）和特征温度T0（K）。当α和β的两个量定义为：α=（Rt / T0）IthVthβ=（Rt / T0）RSIth2点（α，β）存在于由直线α= 0包围的α-β平面上的区域，直线β= 0以及具有t作为参数的曲线（（21n t-1）/ t，（1-ln t）/ t2）。半导体激光器可以包括在第一包层和有源层之间的第一光波导层，并且在第二包层和有源层之间包括第二光波导层，第一光波导层和第二光波导层由 II-VI化合物半导体。制造第一包层和第二包层的II-VI化合物半导体可以是ZnMgSSe化合物半导体。提供了使用II-VI化合物半导体并且在包括室温在内的高温下具有连续振荡能力的半导体激光器。

59. 发明授权

US5732099A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US5732099A
公开(公告)日：1998-03-24
申请号：US686473
申请日：1996-07-25
申请人： Takayuki Kawasumi , Norikazu Nakayama , Akira Ishibashi , Yoshifumi Mori
发明人： Takayuki Kawasumi , Norikazu Nakayama , Akira Ishibashi , Yoshifumi Mori
IPC分类号： H01S5/00 , H01S5/223 , H01S5/327 , H01S5/347 , H01S3/19 , H01L33/00
CPC分类号： H01L33/24 , B82Y20/00 , H01L33/28 , H01S5/2232 , H01S5/347 , H01S5/2235 , H01S5/2237 , H01S5/327
摘要： A p-type GaAs current block layer is stacked on a (100)-oriented n-type GaAs substrate, and a stripe-shaped groove is formed in the p-type GaAs current block layer to extend in the direction. Side surfaces of the groove has the maximum inclination not larger than 60.degree.. The thickness of the p-type GaAs current block layer is 1.5 .mu.m or more. Stacked on the structured substrate having the current narrowed mechanism via an n-type ZnSe buffer layer are an n-type ZnMgSSe cladding layer, n-type ZnSSe waveguide layer, active layer, p-type ZnSSe waveguide layer, p-type ZnMgSSe cladding layer, and others, to establish an index-guided inner-striped semiconductor laser having SCH structure and CSPW structure.
摘要翻译：在（100）取向的n型GaAs衬底上堆叠p型GaAs电流阻挡层，并且在p型GaAs电流阻挡层中形成条形槽，以沿<01-1>方向延伸。槽的侧面最大倾角不大于60°。 p型GaAs电流阻挡层的厚度为1.5μm以上。通过n型ZnSe缓冲层堆叠在具有电流变窄机构的结构化衬底上是n型ZnMgSSe包层，n型ZnSSe波导层，有源层，p型ZnSSe波导层，p型ZnMgSSe覆层等，建立了具有SCH结构和CSPW结构的折射率引导内条纹半导体激光器。

60. 发明授权

US5635306A Honeycomb panel and process for producing same 失效
标题翻译：蜂窝板及其制造方法
公开(公告)号：US5635306A
公开(公告)日：1997-06-03
申请号：US485884
申请日：1995-06-07
申请人： Katsuhiro Minamida , Masashi Oikawa , Atsushi Sugihashi , Akira Ishibashi , Mamoru Takeda
发明人： Katsuhiro Minamida , Masashi Oikawa , Atsushi Sugihashi , Akira Ishibashi , Mamoru Takeda
IPC分类号： B21D47/00 , B23K26/20 , B32B3/12 , E04C2/34 , B32B3/02 , B32B3/28 , B23K26/00
CPC分类号： E04C2/3405 , B21D47/00 , B23K26/22 , B23K26/242 , B23K26/244 , B23K26/26 , B32B3/12 , B23K2201/02 , E04C2002/3455 , E04C2002/3494 , Y10T29/49629 , Y10T428/1234
摘要： The present invention is a honeycomb panel comprising metal face sheets respectively disposed on upper and lower faces of said honeycomb core characterized in that said honeycomb panel has a metal side plate disposed on at least one side face thereof, for mutually connecting honeycomb panels to each other, and a process for producing a honeycomb panel, said process characterized by comprising the steps of: welding a corrugated honeycomb core at an end face of its corrugation to a side plate along the end face of said corrugation; welding the honeycomb core at top portions of its corrugation to an upper face sheet from the side of the honeycomb core by means of an energy beam; welding bottom portions of the corrugation of the honeycomb core to a lower face sheet from the side of the face sheet by means of an energy beam; and welding the face sheets to the side plate before or after welding the honeycomb core to the face sheets.
摘要翻译：本发明是一种蜂窝板，其包括分别设置在所述蜂窝芯的上表面和下表面上的金属面板，其特征在于，所述蜂窝板具有设置在其至少一个侧面上的金属侧板，用于将蜂窝板彼此相互连接以及蜂窝板的制造方法，其特征在于，包括以下步骤：沿着所述波纹的端面将波纹状蜂窝芯在其波纹端面焊接到侧板上; 通过能量束从蜂窝芯的侧面将蜂窝状芯在其波纹的顶部处焊接到上表面片; 通过能量束将蜂窝芯的波纹的底部部分从面板的侧面焊接到下表面片; 并且在将蜂窝芯焊接到面板之前或之后将面板焊接到侧板。

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