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1. 发明授权

US5657336A Semiconductor light-emitting device 失效
标题翻译：半导体发光装置
公开(公告)号：US5657336A
公开(公告)日：1997-08-12
申请号：US508966
申请日：1995-07-28
申请人： Hiroyuki Okuyama , Akira Ishibashi , Eisaku Kato , Hiroshi Yoshida , Kazushi Nakano , Masakazu Ukita , Satoru Kijima , Sakurako Okamoto
发明人： Hiroyuki Okuyama , Akira Ishibashi , Eisaku Kato , Hiroshi Yoshida , Kazushi Nakano , Masakazu Ukita , Satoru Kijima , Sakurako Okamoto
IPC分类号： H01L33/14 , H01L33/28 , H01S5/00 , H01S5/028 , H01S5/30 , H01S5/327 , H01S3/19
CPC分类号： H01L33/285 , H01S5/327 , H01S5/028 , H01S5/305 , H01S5/3086
摘要： A II-VI group compound semiconductor light-emitting device can emit light of a short wavelength at room temperature. Operation characteristics, such as current--voltage characteristics and current--light output characteristics can be stabilized and a life of this semiconductor light-emitting device can be extended. The semiconductor light-emitting device comprises a substrate (1), at least a first cladding layer (2) of a first conductivity type, an active layer (3) and a second cladding layer (4) of a second conductivity type, wherein at least the active layer (3) is made of a II-VI group compound semiconductor and the active layer (3) is doped by either or both of n-type and p-type dopants.
摘要翻译： II-VI族化合物半导体发光元件能够在室温下发出短波长的光。可以稳定电流 - 电压特性和电流 - 光输出特性等工作特性，延长半导体发光元件的寿命。半导体发光器件包括基板（1），至少第一导电类型的第一覆层（2），第二导电类型的有源层（3）和第二覆层（4），其中在至少有源层（3）由II-VI族化合物半导体制成，并且有源层（3）由n型和p型掺杂剂中的一种或两者掺杂。

2. 再颁专利

USRE37177E1 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：USRE37177E1
公开(公告)日：2001-05-15
申请号：US09260865
申请日：1999-03-01
申请人： Masakazu Ukita , Akira Ishibashi
发明人： Masakazu Ukita , Akira Ishibashi
IPC分类号： H01S532
CPC分类号： B82Y20/00 , H01S5/0224 , H01S5/024 , H01S5/028 , H01S5/0421 , H01S5/06209 , H01S5/327 , H01S5/34333 , H01S5/347
摘要： A semiconductor laser comprises: a first cladding layer of a first conduction type; an active layer stacked on the first cladding layer; and a second cladding layer of a second conduction type stacked on the active layer. The first cladding layer, the active layer and the second cladding layer are made of II-VI compound semiconductors. Pulse oscillation occurs with characteristics of a threshold current Ith(A), a threshold voltage Vth(V) of the diode composed of the first cladding layer, the active layer and the second cladding layer, a differential resistance RS(Q) of the diode after the rising, a thermal resistance Rt(K/W) and a characteristic temperature T0(K). When two amounts &agr; and &bgr; are defined by: &agr;≡(Rt/T0)Ithvth &bgr;≡(Rt/T0)RSTth2 the point (&agr;,&bgr;) exists in an area on the &agr;-&bgr; plane surrounded by the straight line &agr;=0, the straight line &bgr;=0, and the curve ((2ln t−1)/t, (1−ln t)/t2) having t as a parameter. The semiconductor laser may include a first optical waveguide layer between the first cladding layer and the active layer and include a second optical waveguide layer between the second cladding layer and the active layer, the first optical waveguide layer and the second optical waveguide layer being made of II-VI compound semiconductors. II-VI compound semiconductors making the first cladding layer and the second cladding layer may be a ZnMgSSe compound semiconductor. A semiconductor laser using II-VI compound semiconductors and having the capability of continuous oscillation at high temperatures including the room temperature is provided.
摘要翻译：半导体激光器包括：第一导电类型的第一包层; 堆叠在所述第一包层上的有源层; 以及层叠在有源层上的第二导电类型的第二包覆层。第一包层，有源层和第二包层由II-VI化合物半导体制成。脉冲振荡发生在阈值电流Ith（A），由第一包层，有源层和第二包层组成的二极管的阈值电压Vth（V），二极管的差分电阻RS（Q）上升之后，具有热阻Rt（K / W）和特征温度T0（K）。当α和β两个定义为：α（β，β）点存在于由直线α= 0包围的α-β平面上的区域，直线β= 0，曲线（（21n t -1）/ t，（1-ln t）/ t2）。半导体激光器可以包括在第一包层和有源层之间的第一光波导层，并且在第二包层和有源层之间包括第二光波导层，第一光波导层和第二光波导层由 II-VI化合物半导体。制造第一包层和第二包层的II-VI化合物半导体可以是ZnMgSSe化合物半导体。提供了使用II-VI化合物半导体并且在包括室温在内的高温下具有连续振荡能力的半导体激光器。

3. 发明授权

US5740193A Semiconductor light-emitting device 失效
标题翻译：半导体发光装置
公开(公告)号：US5740193A
公开(公告)日：1998-04-14
申请号：US832065
申请日：1997-04-02
申请人： Hiroyuki Okuyama , Akira Ishibashi , Eisaku Kato , Hiroshi Yoshida , Kazushi Nakano , Masakazu Ukita , Satoru Kijima , Sakurako Okamoto
发明人： Hiroyuki Okuyama , Akira Ishibashi , Eisaku Kato , Hiroshi Yoshida , Kazushi Nakano , Masakazu Ukita , Satoru Kijima , Sakurako Okamoto
IPC分类号： H01L33/14 , H01L33/28 , H01S5/00 , H01S5/028 , H01S5/30 , H01S5/327 , H01S3/19
CPC分类号： H01L33/285 , H01S5/327 , H01S5/028 , H01S5/305 , H01S5/3086
摘要： A II-VI group compound semiconductor light-emitting device can emit light of a short wavelength at room temperature. Operation characteristics, such as current--voltage characteristics and current--light output characteristics can be stabilized and a life of this semiconductor light-emitting device can be extended. The semiconductor light-emitting device comprises a substrate (1), at least a first cladding layer (2) of a first conductivity type, an active layer (3) and a second cladding layer (4) of a second conductivity type, wherein at least the active layer (3) is made of a II-VI group compound semiconductor and the active layer (3) is doped by either or both of n-type and p-type dopants.
摘要翻译： II-VI族化合物半导体发光元件能够在室温下发出短波长的光。可以稳定电流 - 电压特性和电流 - 光输出特性等工作特性，延长半导体发光元件的寿命。半导体发光器件包括基板（1），至少第一导电类型的第一覆层（2），第二导电类型的有源层（3）和第二覆层（4），其中在至少有源层（3）由II-VI族化合物半导体制成，并且有源层（3）由n型和p型掺杂剂中的一种或两者掺杂。

4. 再颁专利

USRE38339E1 Semiconductor laser 有权
公开(公告)号：USRE38339E1
公开(公告)日：2003-12-02
申请号：US09590647
申请日：2000-06-08
申请人： Masakazu Ukita , Akira Ishibashi
发明人： Masakazu Ukita , Akira Ishibashi
IPC分类号： H01S532
CPC分类号： B82Y20/00 , H01S5/0224 , H01S5/024 , H01S5/028 , H01S5/0421 , H01S5/06209 , H01S5/327 , H01S5/34333 , H01S5/347
摘要： A semiconductor laser comprises: a first cladding layer of a first conduction type; an active layer stacked on the first cladding layer; and a second cladding layer of a second conduction type stacked on the active layer. The first cladding layer, the active layer and the second cladding layer are made of II-VI compound semiconductors. Pulse oscillation occurs with characteristics of a threshold current Ith(A), a threshold voltage Vth(V) of the diode composed of the first cladding layer, the active layer and the second cladding layer, a differential resistance RS(&OHgr;) of the diode after the rising, a thermal resistance Rt(K/W) and a characteristic temperature To(K). When two amounts &agr; and &bgr; are defined by: &agr;≡(Rt/To)IthVth &bgr;≡(Rt/To)RSIth2 the point (&agr;,&bgr;) exists in an area on the &agr;-&bgr; plane surrounded by the straight line &agr;=0, the straight line &bgr;=0, and the curve ((21n t−1)/t, (1−ln t)/t2) having t as a parameter. The semiconductor laser may include a first optical waveguide layer between the first cladding layer and the active layer and include a second optical waveguide layer between the second cladding layer and the active layer, the first optical waveguide layer and the second optical waveguide layer being made of II-VI compound semiconductors. II-VI compound semiconductors making the first cladding layer and the second cladding layer may be a ZnMgSSe compound semiconductor. A semiconductor laser using II-VI compound semiconductors and having the capability of continuous oscillation at high temperatures including the room temperature is provided.

5. 发明授权

US5872023A Method of fabricating of light emitting device with controlled lattice mismatch 失效
标题翻译：具有受控晶格失配的发光器件的制造方法
公开(公告)号：US5872023A
公开(公告)日：1999-02-16
申请号：US829214
申请日：1997-03-31
申请人： Masashi Shiraishi , Satoshi Ito , Kazushi Nakano , Akira Ishibashi , Masao Ikeda , Hiroyuki Okuyama , Katsuhiro Akimoto , Tomonori Hino , Masakazu Ukita
发明人： Masashi Shiraishi , Satoshi Ito , Kazushi Nakano , Akira Ishibashi , Masao Ikeda , Hiroyuki Okuyama , Katsuhiro Akimoto , Tomonori Hino , Masakazu Ukita
IPC分类号： H01L33/00 , H01L33/28 , H01S5/32 , H01S5/327 , H01S3/19
CPC分类号： H01L33/28 , H01L33/0087 , H01S5/327 , H01S5/3201
摘要： The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of II group elements such as Zn, Hg, Cd, Mg and at least one kind of VI group elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.a/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).
摘要翻译：半导体发光器件包括半导体衬底（1），沉积在半导体衬底（1）上的第一导电型第一包覆层（2），沉积在第一覆层（2）上的有源层（4）沉积在有源层（4）上的第二导电类型的第二包覆层（6）。第一和第二覆层（2,6）由包括Zn，Hg，Cd，Mg中的至少一种II族元素的II / VI化合物半导体和至少一种VI族元素构成作为S，Se，Te。第一包层（2）和第二包覆层（6）中的至少一个与基板之间的晶格失配DELTA a / a（％）设定在-0.9％的范围内ΔTATA/ /=0.5%（参考符号a和ac表示半导体衬底的晶格常数和第一和第二包层中的至少任一个的晶格常数，并且DELTA a从DELTA a = ac-a获得）。

6. 发明授权

US5625634A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5625634A
公开(公告)日：1997-04-29
申请号：US275374
申请日：1994-07-15
申请人： Masakazu Ukita , Akira Ishibashi
发明人： Masakazu Ukita , Akira Ishibashi
IPC分类号： H01S5/00 , H01S5/024 , H01S5/028 , H01S5/042 , H01S5/062 , H01S5/323 , H01S5/327 , H01S5/343 , H01S5/347 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/024 , H01S5/06209 , H01S5/327 , H01S5/34333 , H01S5/347 , H01S5/0224 , H01S5/028 , H01S5/0421
摘要： A semiconductor laser comprises: a first cladding layer of a first conduction type; an active layer stacked on the first cladding layer; and a second cladding layer of a second conduction type stacked on the active layer. The first cladding layer, the active layer and the second cladding layer are made of II-VI compound semiconductors. Pulse oscillation occurs with characteristics of a threshold current I.sub.th (A), a threshold voltage V.sub.th (V) of the diode composed of the first cladding layer, the active layer and the second cladding layer, a differential resistance R.sub.S (Q) of the diode after the rising, a thermal resistance R.sub.t (K/W) and a characteristic temperature T.sub.0 (K). When two amounts .alpha. and .beta. are defined by:.alpha..ident.(R.sub.t /T.sub.0)I.sub.th v.sub.th.beta..ident.(R.sub.t /T.sub.0)R.sub.S I.sub.th.sup.2the point (.alpha., .beta.) exists in an area on the .alpha.-.beta. plane surrounded by the straight line .alpha.=0, the straight line .beta.=0, and the curve ((2ln t-1)/t, (1-ln t)/t.sup.2) having t as a parameter. The semiconductor laser may include a first optical waveguide layer between the first cladding layer and the active layer and include a second optical waveguide layer between the second cladding layer and the active layer, the first optical waveguide layer and the second optical waveguide layer being made of II-VI compound semiconductors. II-VI compound semiconductors making the first cladding layer and the second cladding layer may be a ZnMgSSe compound semiconductor. A semiconductor laser using II-VI compound semiconductors and having the capability of continuous oscillation at high temperatures including the room temperature is provided.
摘要翻译：半导体激光器包括：第一导电类型的第一包层; 堆叠在所述第一包层上的有源层; 以及层叠在有源层上的第二导电类型的第二包覆层。第一包层，有源层和第二包层由II-VI化合物半导体制成。脉冲振荡发生在阈值电流Ith（A），由第一包层，有源层和第二包层组成的二极管的阈值电压Vth（V），二极管的差分电阻RS（Q）上升之后，具有热阻Rt（K / W）和特征温度T0（K）。当α和β的两个量定义为：α=（Rt / T0）Ithvth beta =（Rt / T0）RSIth2点（α，β）存在于由直线α= 0，直线β= 0以及具有t作为参数的曲线（（2ln t-1）/ t，（1-ln t）/ t2）。半导体激光器可以包括在第一包层和有源层之间的第一光波导层，并且在第二包层和有源层之间包括第二光波导层，第一光波导层和第二光波导层由 II-VI化合物半导体。制造第一包层和第二包层的II-VI化合物半导体可以是ZnMgSSe化合物半导体。提供了使用II-VI化合物半导体并且在包括室温在内的高温下具有连续振荡能力的半导体激光器。

7. 发明授权

US5764672A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5764672A
公开(公告)日：1998-06-09
申请号：US829064
申请日：1997-03-31
申请人： Masakazu Ukita , Akira Ishibashi
发明人： Masakazu Ukita , Akira Ishibashi
IPC分类号： H01S5/00 , H01S5/024 , H01S5/028 , H01S5/042 , H01S5/062 , H01S5/323 , H01S5/327 , H01S5/343 , H01S5/347 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/024 , H01S5/06209 , H01S5/327 , H01S5/34333 , H01S5/347 , H01S5/0224 , H01S5/028 , H01S5/0421
摘要： A semiconductor laser comprises: a first cladding layer of a first conduction type; an active layer stacked on the first cladding layer; and a second cladding layer of a second conduction type stacked on the active layer. The first cladding layer, the active layer and the second cladding layer are made of II-VI compound semiconductors. Pulse oscillation occurs with characteristics of a threshold current I.sub.th (A), a threshold voltage V.sub.th (V) of the diode composed of the first cladding layer, the active layer and the second cladding layer, a differential resistance R.sub.S (.OMEGA.) of the diode after the rising, a thermal resistance R.sub.t (K/W) and a characteristic temperature T.sub.0 (K). When two amounts .alpha. and .beta. are defined by: .alpha..ident.(R.sub.t /T.sub.0)I.sub.th V.sub.th .beta..ident.(R.sub.t /T.sub.0)R.sub.S I.sub.th.sup.2 the point (.alpha., .beta.) exists in an area on the .alpha.-.beta. plane surrounded by the straight line .alpha.=0, the straight line .beta.=0, and the curve ((21n t-1)/t, (1-ln t)/t.sup.2) having t as a parameter. The semiconductor laser may include a first optical waveguide layer between the first cladding layer and the active layer and include a second optical waveguide layer between the second cladding layer and the active layer, the first optical waveguide layer and the second optical waveguide layer being made of II-VI compound semiconductors. II-VI compound semiconductors making the first cladding layer and the second cladding layer may be a ZnMgSSe compound semiconductor. A semiconductor laser using II-VI compound semiconductors and having the capability of continuous oscillation at high temperatures including the room temperature is provided.
摘要翻译：半导体激光器包括：第一导电类型的第一包层; 堆叠在所述第一包层上的有源层; 以及层叠在有源层上的第二导电类型的第二包覆层。第一包层，有源层和第二包层由II-VI化合物半导体制成。脉冲振荡发生在阈值电流Ith（A），由第一包层，有源层和第二包层组成的二极管的阈值电压Vth（V），二极管的差分电阻RS（OMEGA）上升之后，具有热阻Rt（K / W）和特征温度T0（K）。当α和β的两个量定义为：α=（Rt / T0）IthVthβ=（Rt / T0）RSIth2点（α，β）存在于由直线α= 0包围的α-β平面上的区域，直线β= 0以及具有t作为参数的曲线（（21n t-1）/ t，（1-ln t）/ t2）。半导体激光器可以包括在第一包层和有源层之间的第一光波导层，并且在第二包层和有源层之间包括第二光波导层，第一光波导层和第二光波导层由 II-VI化合物半导体。制造第一包层和第二包层的II-VI化合物半导体可以是ZnMgSSe化合物半导体。提供了使用II-VI化合物半导体并且在包括室温在内的高温下具有连续振荡能力的半导体激光器。

8. 发明授权

US5633514A Semiconductor light emitting device with lattice-matching and lattice-mismatching 失效
标题翻译：具有晶格匹配和晶格失配的半导体发光器件
公开(公告)号：US5633514A
公开(公告)日：1997-05-27
申请号：US570376
申请日：1995-12-11
申请人： Masashi Shiraishi , Satoshi Ito , Kazushi Nakano , Akira Ishibashi , Masao Ikeda , Hiroyuki Okuyama , Katsuhiro Akimoto , Tomonori Hino , Masakazu Ukita
发明人： Masashi Shiraishi , Satoshi Ito , Kazushi Nakano , Akira Ishibashi , Masao Ikeda , Hiroyuki Okuyama , Katsuhiro Akimoto , Tomonori Hino , Masakazu Ukita
IPC分类号： H01L33/00 , H01L33/28 , H01S5/32 , H01S5/327
CPC分类号： H01L33/28 , H01L33/0087 , H01S5/327 , H01S5/3201
摘要： The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of group II elements such as Zn, Hg, Cd, Mg and at least one kind of group VI elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.Aa/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).
摘要翻译：半导体发光器件包括半导体衬底（1），沉积在半导体衬底（1）上的第一导电型第一包覆层（2），沉积在第一覆层（2）上的有源层（4）沉积在有源层（4）上的第二导电类型的第二包覆层（6）。第一和第二覆层（2,6）由包括Zn，Hg，Cd，Mg中的至少一种II族元素和至少一种VI族元素的II / VI族化合物半导体制成，作为S，Se，Te。在第一包层（2）和第二包覆层（6）中的至少一个与基板之间的晶格失配DELTA a / a（％）设定在-0.9％的范围内ΔTAAa/ /=0.5%（参考符号a和ac表示半导体衬底的晶格常数和第一和第二包层中的至少任一个的晶格常数，并且DELTA a从DELTA a = ac-a获得）。

9. 发明授权

US10001798B2 Determining power to be supplied based on reservation information of a vehicle 有权
公开(公告)号：US10001798B2
公开(公告)日：2018-06-19
申请号：US14124801
申请日：2012-05-25
申请人： Masakazu Ukita , Shiho Moriai , Masanobu Katagi
发明人： Masakazu Ukita , Shiho Moriai , Masanobu Katagi
IPC分类号： G05D3/12 , G05F1/66 , H02J3/32 , B60L11/18 , H02J3/38 , H02J7/00
CPC分类号： G05F1/66 , B60L53/30 , B60L53/305 , B60L53/63 , B60L53/64 , B60L53/65 , B60L53/68 , B60L55/00 , B60L2240/72 , B60L2240/80 , H02J3/32 , H02J3/381 , H02J7/0004 , Y02E60/721 , Y02E60/722 , Y02T10/7005 , Y02T10/7088 , Y02T10/7291 , Y02T90/121 , Y02T90/128 , Y02T90/14 , Y02T90/163 , Y02T90/168 , Y02T90/169 , Y04S10/126 , Y04S10/14 , Y04S30/12 , Y04S30/14
摘要： There is provided an information processing device including an acquisition unit that acquires power supply request information that includes information on a supply period during which an electric power system is requesting supply of electric power, and reservation information for a vehicle, a calculation unit that, on the basis of the reservation information, calculates supply power to be supplied to the electric power system from the vehicle during the supply period, and a notification unit that notifies the electric power system of the calculated supply power.

10. 发明授权

US09386101B2 System and method for securing a power management apparatus from an attack by verifying acquired data based on statistical processing, data simulation, and watermark verification 有权
标题翻译：通过基于统计处理，数据模拟和水印验证验证获取的数据来保护电源管理装置免受攻击的系统和方法
公开(公告)号：US09386101B2
公开(公告)日：2016-07-05
申请号：US13006492
申请日：2011-01-14
申请人： Yohei Kawamoto , Asami Yoshida , Tomoyuki Asano , Masakazu Ukita , Shiho Moriai , Masanobu Katagi , Yu Tanaka , Seiichi Matsuda
发明人： Yohei Kawamoto , Asami Yoshida , Tomoyuki Asano , Masakazu Ukita , Shiho Moriai , Masanobu Katagi , Yu Tanaka , Seiichi Matsuda
IPC分类号： G06F1/00 , H04L29/08 , G06T1/00 , G10L19/018 , G06F21/76 , G06Q50/06
CPC分类号： H04L67/125 , G06F21/76 , G06Q50/06 , G06T1/0021 , G06T1/0028 , G06T1/005 , G10L19/018
摘要： There is provided an analysis server including a first verifying unit that analyzes data acquired from a local power management system composed of an electronic appliance provided with a sensor and a power management apparatus managing power supply to the electronic appliance connected to a power network, by using history information of the local power management system or data acquired from another local power management system with a power usage state similar to that of the local power management system, a second verifying unit that analyzes the data acquired from the local power management system, by using an estimated value calculated by simulation using characteristics information and/or specification information of the electronic appliance, and a control unit that controls the first verifying unit and the second verifying unit.
摘要翻译：提供了一种分析服务器，其包括：第一验证单元，其分析从由设置有传感器的电子设备组成的本地电力管理系统获取的数据;以及管理电力连接到电力网络的电子设备的电力管理设备，通过使用本地电力管理系统的历史信息或从具有与本地电力管理系统的使用状态相似的另一本地电力管理系统获取的数据，第二验证单元，其通过使用从本地电力管理系统获取的数据分析通过使用电子设备的特征信息和/或指定信息的模拟计算的估计值，以及控制第一验证单元和第二验证单元的控制单元。

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