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51. 发明授权

US08404761B2 White ink for inkjet 有权
标题翻译：用于喷墨的白色墨水
公开(公告)号：US08404761B2
公开(公告)日：2013-03-26
申请号：US12654818
申请日：2010-01-05
申请人： Masami Shinozaki , Hiroyuki Ogawa
发明人： Masami Shinozaki , Hiroyuki Ogawa
IPC分类号： B41J2/01 , B41J2/17 , B41J2/175 , B60C1/00 , C08K3/22 , C08K3/34 , C09D5/00 , C09D11/00 , G01D11/00
CPC分类号： C09D11/38 , C09D11/322
摘要： A white ink for an inkjet, comprising a silica, a resin emulsion, and water, wherein an amount of the resin emulsion, reported as a mass ratio relative to a value of 1 for the silica, is within a range from 0.10 to 0.45.
摘要翻译：一种用于喷墨的白色油墨，包括二氧化硅，树脂乳液和水，其中相对于二氧化硅以质量比1表示的质量比的树脂乳液的量在0.10至0.45的范围内。

52. 发明授权

US08351247B2 Semiconductor device including memory cell having capacitor 有权
标题翻译：包括具有电容器的存储单元的半导体器件
公开(公告)号：US08351247B2
公开(公告)日：2013-01-08
申请号：US12707044
申请日：2010-02-17
申请人： Hiroyuki Ogawa , Hiroyoshi Tomita , Masato Takita
发明人： Hiroyuki Ogawa , Hiroyoshi Tomita , Masato Takita
IPC分类号： G11C11/24
CPC分类号： H01L27/0207 , G11C5/063 , G11C7/02 , G11C7/18 , G11C11/4097 , H01L27/1085 , H01L27/10885 , H01L27/10897
摘要： A semiconductor device includes a semiconductor substrate; a memory cell array including a plurality of memory cells formed on the semiconductor substrate and arranged in a matrix in a first direction and a second direction on the surface of the semiconductor substrate; a plurality of sense amplifiers formed on the semiconductor substrate and including a first sense amplifier and a second sense amplifier; and a plurality of bit lines extending along the first direction above the memory cell array, and arranged side by side in the second direction, wherein the plurality of bit lines include a first bit line pair formed in a first wiring layer and a second bit line pair formed in a second wiring layer located above the first wiring layer.
摘要翻译：半导体器件包括半导体衬底; 存储单元阵列，包括形成在所述半导体衬底上并在所述半导体衬底的表面上沿第一方向和第二方向布置成矩阵的多个存储单元; 多个读出放大器，形成在半导体衬底上并包括第一读出放大器和第二读出放大器; 以及沿着存储单元阵列上方的第一方向延伸并沿第二方向并排布置的多个位线，其中多个位线包括形成在第一布线层中的第一位线对和第二位线形成在位于第一布线层上方的第二布线层中。

53. 发明授权

US08350310B2 Semiconductor device including memory cell having capacitor 有权
公开(公告)号：US08350310B2
公开(公告)日：2013-01-08
申请号：US13473242
申请日：2012-05-16
申请人： Hiroyuki Ogawa , Hiroyoshi Tomita , Masato Takita
发明人： Hiroyuki Ogawa , Hiroyoshi Tomita , Masato Takita
IPC分类号： H01L27/108
CPC分类号： H01L27/0207 , G11C5/063 , G11C7/02 , G11C7/18 , G11C11/4097 , H01L27/1085 , H01L27/10885 , H01L27/10897
摘要： A semiconductor device includes a semiconductor substrate; a memory cell array including a plurality of memory cells formed on the semiconductor substrate and arranged in a matrix in a first direction and a second direction on the surface of the semiconductor substrate; a plurality of sense amplifiers formed on the semiconductor substrate and including a first sense amplifier and a second sense amplifier; and a plurality of bit lines extending along the first direction above the memory cell array, and arranged side by side in the second direction, wherein the plurality of bit lines include a first bit line pair formed in a first wiring layer and a second bit line pair formed in a second wiring layer located above the first wiring layer.

54. 发明授权

US08313704B2 Spouted bed device, polyolefin production system with spouted bed device, and polyolefin production process 有权
标题翻译：喷射床装置，具有喷射床装置的聚烯烃生产系统和聚烯烃生产过程
公开(公告)号：US08313704B2
公开(公告)日：2012-11-20
申请号：US12332112
申请日：2008-12-10
申请人： Hiroyuki Ogawa , Hideki Sato , Hiroshi Ueda
发明人： Hiroyuki Ogawa , Hideki Sato , Hiroshi Ueda
IPC分类号： B01J8/18 , B01J19/00 , C08F2/34
CPC分类号： C08F10/00 , B01J8/0055 , B01J8/245 , B01J2208/00274 , B01J2208/00283 , B01J2208/00292 , B01J2208/00575 , C08F110/06 , C08F2/01 , C08F2/001 , C08F2/34
摘要： A spouted bed device according to the present invention includes a vertically extending cylinder; a decreasing diameter member which is formed on the cylinder, has an inside diameter that decreases progressively downward, and has a gas inlet orifice at a bottom end thereof; and a tubular portion which extends downward from an edge of the gas inlet orifice. A spouted bed is formed in a treatment zone enclosed by a top surface of the decreasing diameter member and an inner wall of the cylinder above the decreasing diameter member.
摘要翻译：根据本发明的喷射床装置包括垂直延伸的气缸; 形成在气缸上的直径减小的构件具有逐渐向下减小的内径，并且在其底端具有气体入口孔; 以及从气体入口孔的边缘向下延伸的管状部分。在由直径减小的构件的顶面包围的处理区域中形成喷射床，并且在直径减小的构件上方形成圆柱体的内壁。

55. 发明申请

US20120244991A1 CONTINUOUSLY VARIABLE TRANSMISSION 有权
标题翻译：连续可变传输
公开(公告)号：US20120244991A1
公开(公告)日：2012-09-27
申请号：US12997050
申请日：2009-12-02
申请人： Takahiro Shiina , Akira Murakami , Hiroyuki Ogawa , Daisuke Tomomatsu
发明人： Takahiro Shiina , Akira Murakami , Hiroyuki Ogawa , Daisuke Tomomatsu
IPC分类号： F16H15/40
CPC分类号： F16H15/52
摘要： A continuously variable transmission having a continuously variable transmission mechanism including an input member, an output member, and a rotary member sandwiched therebetween, transmitting torque between the input member and the output member by means of frictional forces generated by pushing the input member and the output member against the rotary member, and continuously varying a transmission gear ratio between the input member and the output member, an axial force generating portion which rotates in one direction to generate a first axial force for pushing one of the input member and the output member toward the other and rotates in the other direction to generate a second axial force opposite to the first force, and an opposite axial force transmitting portion for transmitting the second force to the other of the input member and the output member when the axial force generating portion generates the second force.
摘要翻译：一种无级变速器，具有无级变速传动机构，其包括输入部件，输出部件和夹在其间的旋转部件，通过将输入部件和输出部件的推压产生的摩擦力在输入部件与输出部件之间传递转矩并且连续地改变所述输入构件和所述输出构件之间的传动齿轮比;轴向力产生部，其在一个方向上旋转以产生用于将所述输入构件和所述输出构件中的一个推向所述输出构件的第一轴向力另一方向并沿另一方向旋转，产生与第一力相反的第二轴向力，以及相反的轴向力传递部，用于当轴向力产生部产生时将第二力传递到输入构件和输出构件中的另一个第二个力量

56. 发明申请

US20120193635A1 SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCTION OF THE SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE EQUIPPED WITH THE SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件，用于制造半导体器件的工艺，以及配备半导体器件的显示器件
公开(公告)号：US20120193635A1
公开(公告)日：2012-08-02
申请号：US13500023
申请日：2010-09-21
申请人： Hiroshi Matsukizono , Tomohiro Kimura , Hiroyuki Ogawa
发明人： Hiroshi Matsukizono , Tomohiro Kimura , Hiroyuki Ogawa
IPC分类号： H01L29/786 , H01L21/20 , H01L29/02
CPC分类号： G02F1/1362 , G02F1/13318 , G02F1/13338 , H01L27/1214
摘要： A thin film diode (100A) includes a semiconductor layer (130) having first, second, and third semiconductor regions, a first insulating layer (122) formed on the semiconductor layer (130), and a second insulating layer (123) formed on the first insulating layer (122). The first semiconductor region (134A) contains an impurity of a first-conductivity type at a first concentration; the second semiconductor region (135A) contains an impurity of a second-conductivity type different from the first conductivity type at a second concentration; and the third semiconductor region (133A) contains the first-conductivity type impurity at a third concentration lower than the first concentration, or contains the second-conductivity type impurity at a third concentration lower than the second concentration. The first semiconductor region (134A) conforms to an aperture pattern in the second insulating layer (123), or the second semiconductor region (135A) conforms to an aperture pattern in the second insulating layer (123).
摘要翻译：薄膜二极管（100A）包括具有第一，第二和第三半导体区域的半导体层（130），形成在半导体层（130）上的第一绝缘层（122）和形成在第一绝缘层第一绝缘层（122）。第一半导体区域（134A）含有第一浓度的第一导电类型的杂质; 第二半导体区域（135A）在第二浓度下含有不同于第一导电类型的第二导电类型的杂质; 并且第三半导体区域（133A）含有比第一浓度低的第三浓度的第一导电型杂质，或者包含第二浓度低于第二浓度的第三浓度的第二导电型杂质。第一半导体区域（134A）符合第二绝缘层（123）中的孔径图案，或者第二半导体区域（135A）符合第二绝缘层（123）中的孔径图案。

57. 发明授权

US08173514B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08173514B2
公开(公告)日：2012-05-08
申请号：US12369859
申请日：2009-02-12
申请人： Jusuke Ogura , Hikaru Kokura , Hideyuki Kojima , Toru Anezaki , Hiroyuki Ogawa , Junichi Ariyoshi
发明人： Jusuke Ogura , Hikaru Kokura , Hideyuki Kojima , Toru Anezaki , Hiroyuki Ogawa , Junichi Ariyoshi
IPC分类号： H01L21/76
CPC分类号： H01L21/76224 , H01L21/823481 , H01L27/1052 , H01L27/11521
摘要： A method of manufacturing a semiconductor device includes forming an isolation region defining an active region in a semiconductor substrate, forming a first insulating film over the semiconductor substrate, forming a second insulating film having etching properties different from those of the first insulating film over the first insulating film, selectively removing the second insulating film from a first region over the active region and the isolation region by dry etching using a fluorocarbon-based etching gas, removing a residual film formed by the dry etching over the first insulating film by exposure in an atmosphere containing oxygen, and selectively removing the first insulating film from the first region by wet etching.
摘要翻译：制造半导体器件的方法包括在半导体衬底中形成限定有源区的隔离区，在半导体衬底上形成第一绝缘膜，形成第二绝缘膜，该第二绝缘膜具有与第一绝缘膜相同的蚀刻性能绝缘膜，通过使用基于碳氟化合物的蚀刻气体的干蚀刻从有源区域和隔离区域上的第一区域选择性地去除第二绝缘膜，通过在第一绝缘膜上暴露于第一绝缘膜上形成的残留膜含氧的气氛，通过湿式蚀刻从第一区域选择性地除去第一绝缘膜。

58. 发明授权

US08163246B2 Spouted-fluidized bed-type olefin polymerization reactor 有权
标题翻译：喷射流化床型烯烃聚合反应器
公开(公告)号：US08163246B2
公开(公告)日：2012-04-24
申请号：US12795432
申请日：2010-06-07
申请人： Hideki Sato , Hiroyuki Ogawa
发明人： Hideki Sato , Hiroyuki Ogawa
IPC分类号： C08F2/01 , B01J8/08 , B01J19/00 , B01J19/18
CPC分类号： C08F2/01 , B01J8/0065 , B01J8/1827 , B01J8/245 , B01J8/28 , B01J8/34 , B01J8/386 , B01J8/44
摘要： An olefin polymerization reactor according to the present invention comprises: a vertically extending cylinder; a decreasing diameter portion on the cylinder, having an inside diameter that decreases progressively downward, and having a gas inlet orifice at a bottom end thereof; and a plurality of through holes passing through from an outside surface towards an inside surface of the decreasing diameter portion. Inside a reaction zone enclosed by an inside surface of the decreasing diameter portion and an inside surface above the decreasing diameter portion of the cylinder, a spouted-fluidized bed or a spouted bed is formed.
摘要翻译：根据本发明的烯烃聚合反应器包括：垂直延伸的气缸; 圆柱体上的直径减小部分，具有逐渐向下减小的内径，并且在其底端具有气体入口孔; 以及从所述直径减小部分的外表面向内表面穿过的多个通孔。在由减径部分的内表面和气缸的直径减小部分之上的内表面包围的反应区内形成喷射流化床或喷射床。

59. 发明授权

US08112209B2 Vehicle driving force control device 有权
标题翻译：车辆驱动力控制装置
公开(公告)号：US08112209B2
公开(公告)日：2012-02-07
申请号：US12525829
申请日：2008-03-10
申请人： Hiroyuki Ogawa , Kenji Arai
发明人： Hiroyuki Ogawa , Kenji Arai
IPC分类号： G06F19/00
CPC分类号： F02D29/02 , B60W10/06 , B60W10/11 , B60W30/188 , B60W30/19 , B60W2510/1015 , B60W2540/103 , B60W2710/0677 , B60W2710/1061 , F02D41/023 , F02D41/10 , F02D2250/21 , F16H59/18 , F16H59/42 , F16H63/502 , Y10T477/75 , Y10T477/755 , Y10T477/816
摘要： A vehicle driving force control device including an input shaft rotation number sensor which detects a transmission input shaft rotation number to be input from an engine to an automatic transmission, an accelerator opening sensor which detects accelerator opening, a TCU for calculating a required output of the automatic transmission based on the transmission input shaft rotation number and the accelerator opening, and an electronic control unit which controls the engine and the automatic transmission based on the required output. The TCU sets the required output to a constant value regardless of the transmission input shaft rotation number when the accelerator opening is not larger than a predetermined value, and sets to increase or decrease the required output according to increase and decrease of the transmission input shaft rotation number when the accelerator opening is larger than the predetermined value.
摘要翻译：一种车辆驱动力控制装置，包括检测从发动机输入到自动变速器的变速器输入轴转速的输入轴转速传感器，检测加速器开度的加速器开度传感器，用于计算所需输出的所需输出的TCU 基于变速器输入轴转速和加速器开度的自动变速器，以及基于所需输出来控制发动机和自动变速器的电子控制单元。当加速器开度不大于预定值时，TCU将所需输出设置为恒定值，而不管变速器输入轴转速如何，根据变速器输入轴转速的增减来设定要求的输出当加速器开度大于预定值时的数量。

60. 发明申请

US20110227087A1 SUBSTRATE FOR DISPLAY DEVICE, AND DISPLAY DEVICE 审中-公开
标题翻译：用于显示装置的基板和显示装置
公开(公告)号：US20110227087A1
公开(公告)日：2011-09-22
申请号：US13130552
申请日：2009-11-19
申请人： Hiroyuki Moriwaki , Kouhei Tanaka , Hiroyuki Ogawa
发明人： Hiroyuki Moriwaki , Kouhei Tanaka , Hiroyuki Ogawa
IPC分类号： H01L27/06
CPC分类号： H01L27/3265 , G02F1/13318 , G02F1/136213 , G02F2201/40 , H01L27/3276
摘要： Disclosed is a display device substrate and a display device in which a peripheral circuit is provided in a frame region that can achieve a higher aperture ratio while suppressing the production cost. The display device substrate includes a peripheral circuit provided in a frame region, a first pixel auxiliary capacitance, and a thin film transistor. The first pixel auxiliary capacitance includes an upper electrode and a lower electrode. The peripheral circuit includes wirings. The thin film transistor includes a gate electrode. The upper electrode and the lower electrode are disposed above the gate electrode, and formed of the same material as the wirings.
摘要翻译：公开了一种显示装置基板和显示装置，其中外围电路设置在能够在抑制制造成本的同时实现更高的开口率的框架区域中。显示装置基板包括设置在框架区域中的外围电路，第一像素辅助电容和薄膜晶体管。第一像素辅助电容包括上电极和下电极。外围电路包括布线。薄膜晶体管包括栅电极。上电极和下电极设置在栅电极上方，并由与布线相同的材料形成。

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