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51. 发明申请

US20070276886A1 Method of and apparatus for backing up data and method of and apparatus for restoring data in data management system 审中-公开
标题翻译：用于备份数据的方法和装置，以及用于在数据管理系统中恢复数据的方法和装置
公开(公告)号：US20070276886A1
公开(公告)日：2007-11-29
申请号：US11802283
申请日：2007-05-22
申请人： Akio Ishikawa , Fumihiko Nagashima
发明人： Akio Ishikawa , Fumihiko Nagashima
IPC分类号： G06F17/30
CPC分类号： G06F11/1469 , G06F11/1456
摘要： A drawing saving unit records image data stored in data memories in a visualized image format on a microfilm, and also records attribute data which is related to the image data and stored in the data memories, in a visualized code format on the microfilm. The image data and the attribute data thus recorded on the microfilm can easily and reliably be restored.
摘要翻译：绘图保存单元将以可视化图像格式存储在数据存储器中的图像数据记录在缩微胶片上，并且以缩微胶卷的可视化代码格式记录与图像数据相关并存储在数据存储器中的属性数据。因此，可以容易且可靠地恢复由此记录在微缩胶卷上的图像数据和属性数据。

52. 发明申请

US20070165940A1 Semiconductor surface inspection apparatus, surface inspection method, and semiconductor manufacturing apparatus 审中-公开
标题翻译：半导体表面检查装置，表面检查方法以及半导体制造装置
公开(公告)号：US20070165940A1
公开(公告)日：2007-07-19
申请号：US11652825
申请日：2007-01-11
申请人： Akio Ishikawa
发明人： Akio Ishikawa
IPC分类号： G06K9/00
CPC分类号： H01L21/67288 , G01N21/9501
摘要： A semiconductor surface inspection apparatus 20, for detecting a defect existing on a surface of a sample, based on an image captured of the surface of the sample to which prescribed processing is applied in a semiconductor manufacturing apparatus 1, comprises: a defect detection unit 28 which detects a defect in an image captured one of before and after the prescribed processing; and an image extraction unit 32 which extracts, from an image captured the other of after and before the prescribed processing, an image of a portion corresponding to the portion where the defect was detected by the defect detection unit 28.
摘要翻译：半导体表面检查装置20，用于基于在半导体制造装置1中对应用了规定处理的样品的表面拍摄的图像，检测存在于样品表面上的缺陷，包括：缺陷检测单元28 其检测在规定处理之前和之后捕获的图像中的缺陷; 以及图像提取单元32，其从在规定处理之后和之后捕获的另一个图像中提取与缺陷检测单元28检测到缺陷的部分相对应的部分的图像。

53. 发明申请

US20060159333A1 Image defect inspection method, image defect inspection apparatus, and appearance inspection apparatus 失效
标题翻译：图像缺陷检查方法，图像缺陷检查装置和外观检查装置
公开(公告)号：US20060159333A1
公开(公告)日：2006-07-20
申请号：US11298113
申请日：2005-12-08
申请人： Akio Ishikawa
发明人： Akio Ishikawa
IPC分类号： G06K9/00
CPC分类号： G06T7/001 , G06T2207/30148
摘要： In an image defect inspection method and apparatus which detects a gray level difference between corresponding portions of two images, automatically sets a threshold value based on the distribution thereof, compares the gray level difference with the threshold value, and judges one or the other of the portions to be defective if the gray level difference is larger than the threshold value, provisions are made to correct the threshold value when the distribution of the gray level difference is different from the usual distribution, thereby achieving high detection sensitivity while suppressing the occurrence of false defects. To achieve this object, the cumulative frequency of the gray level difference is computed (S3); a converted cumulative frequency is computed by converting the cumulative frequency so that the cumulative frequency shows a linear relationship with respect to the gray level difference when the gray level difference is assumed to exhibit a distribution that obeys a prescribed type of distribution (S4); an approximation curve of the converted cumulative frequency is derived (S11); the second derivative of the approximation curve with respect to the gray level difference is computed (S12); and the threshold value is corrected in accordance with the second derivative (S13).
摘要翻译：在检测两个图像的相应部分之间的灰度差的图像缺陷检查方法和装置中，基于其分布自动设置阈值，将灰度级差与阈值进行比较，并判断其中的一个或另一个如果灰度级差大于阈值，则有缺陷的部分，当灰度差的分布与通常分布不同时，进行校正阈值，从而在抑制发生错误的同时实现高检测灵敏度缺陷为了达到这个目的，计算灰度级差的累积频率（S 3）; 通过转换累积频率来计算转换的累积频率，使得当灰度级差被假定呈现符合规定类型的分布的分布时，累积频率相对于灰度级差异呈现线性关系（S 4）; 导出转换的累积频率的近似曲线（S 11）; 计算相对于灰度级差的近似曲线的二阶导数（S 12）; 并根据二阶导数校正阈值（S13）。

54. 发明申请

US20050097446A1 Drawing management system 审中-公开
标题翻译：绘图管理系统
公开(公告)号：US20050097446A1
公开(公告)日：2005-05-05
申请号：US10973241
申请日：2004-10-27
申请人： Norikazu Fuchino , Fumihiko Nagashima , Yoshifumi Waki , Akio Ishikawa
发明人： Norikazu Fuchino , Fumihiko Nagashima , Yoshifumi Waki , Akio Ishikawa
IPC分类号： G06F17/50 , G06F17/00 , G06F17/24 , G06F17/30 , G06T1/00 , G06T11/60
CPC分类号： G06T11/60
摘要： A drawing information editing device controls a drawing registering device to read a drawing with a scanner, and stores actual drawing image data and compressed drawing image data, together with drawing attribute data, in a data storage device of a drawing information storing device. A drawing retrieving device retrieves compressed drawing image data according to a set retrieval condition based on drawing attribute data, displays a compressed drawing based on the compressed drawing image data, and displays a desired drawing selected from the compressed drawing based on actual drawing image data.
摘要翻译：绘图信息编辑装置控制绘图登记装置用扫描仪读取图形，并将实际绘图图像数据和压缩绘图图像数据与绘图属性数据一起存储在绘图信息存储装置的数据存储装置中。绘图检索装置根据绘图属性数据根据设定的检索条件检索压缩绘图图像数据，基于压缩绘图图像数据显示压缩图，并且基于实际绘图图像数据显示从压缩图形中选择的期望图形。

55. 发明授权

US06838413B2 Oxysulfide photocatalyst for decomposition of water by visible light 失效
标题翻译：用于通过可见光分解水的氧硫化物光催化剂
公开(公告)号：US06838413B2
公开(公告)日：2005-01-04
申请号：US10433460
申请日：2002-01-23
申请人： Kazunari Domen , Michikazu Hara , Tsuyoshi Takata , Akio Ishikawa
发明人： Kazunari Domen , Michikazu Hara , Tsuyoshi Takata , Akio Ishikawa
IPC分类号： B01J23/63 , B01J27/04 , B01J27/045 , B01J35/00 , B01J35/02 , B01J37/02 , B01J37/04 , C01B3/04 , C01B13/02 , C01G23/00 , C01G33/00 , B01J27/02 , B01J23/00 , B01J27/043 , C01D5/10 , C09K11/08
CPC分类号： B01J35/004 , B01J23/63 , B01J27/04 , B01J27/045 , B01J35/002 , B01J37/0201 , B01J37/04 , C01B3/042 , C01B13/0207 , Y02E60/364
摘要： A photocatalyst which comprises an oxysulfide containing at least one transition metal; a preferable photocatalyst which also comprises a rare earth element such as Sm in addition to the above and wherein the transition metal is at least one selected from the group consisting of Ti and Nb; a more preferable photocatalyst which further comprises a promoter comprising a transition metal such as Pt loaded on each of the above photocatalyst; and a catalyst for use in the decomposition of water by a light which comprises one of the above oxysulfide photocatalysts.
摘要翻译：包含含有至少一种过渡金属的氧硫化物的光催化剂; 除了上述之外还包含稀土元素如Sm的优选光催化剂，其中过渡金属是选自Ti和Nb中的至少一种; 更优选的光催化剂还包含一种助催化剂，该助催化剂包含负载在上述每种光催化剂上的过渡金属如Pt; 以及用于通过包含上述氧硫化物光催化剂之一的光分解水的催化剂。

56. 发明授权

US06356521B1 Information recording method and apparatus 有权
公开(公告)号：US06356521B1
公开(公告)日：2002-03-12
申请号：US09247715
申请日：1999-02-09
申请人： Tetsu Kimura , Akio Ishikawa
发明人： Tetsu Kimura , Akio Ishikawa
IPC分类号： G11B509
CPC分类号： G11C29/70 , G11B20/1883 , G11B2220/20
摘要： An information recording apparatus for recording data into a recording medium taking as recording unit a sector corresponding to a predetermined amount of information signal, comprises a file management unit (5) to classify an information signal for recording into the recording medium (101) into a number, two or more, of groups depending upon the importance of the information signal, and a write/read unit (6) to record the information signal into the recording medium (101) while dealing with a defective sector, if any, in the recording medium (101) in a manner designated for the group to which the information signal has been classified to belong at the above classifying step, and record a highly important information signal, when a defective sector is found by checking up the information signal recorded in the recording medium (101), into another sector.

57. 发明授权

US06349080B1 Method and apparatus for efficient reading of data from disc record medium by selecting reading order of data units 失效
标题翻译：通过选择数据单元的读取顺序来有效地从盘记录介质读取数据的方法和装置
公开(公告)号：US06349080B1
公开(公告)日：2002-02-19
申请号：US09246627
申请日：1999-02-08
申请人： Akio Ishikawa
发明人： Akio Ishikawa
IPC分类号： G11B700
CPC分类号： G11B20/10527 , G11B27/105 , G11B27/36 , G11B2020/10814
摘要： A data reading apparatus and a data reading method are disclosed which are structured to efficiently read data from a recording medium so as to improve data processing speed. A reading-order control circuit obtains first total jump time which is taken when data is read from an optical disc in an order as first, second, third and fourth files and second total jump time which is taken when data is read in an order as first, third, second and fourth files. The reading-order control circuit determines whether or not the first total jump time is longer than the second total jump time. If the reading-order control circuit determines that the first total jump time is longer than the second total jump time, the reading-order control circuit controls an optical head to read data from the optical disc in the order as the first, third, second and the fourth files.
摘要翻译：公开了一种数据读取装置和数据读取方法，其被构造为有效地从记录介质读取数据，以便提高数据处理速度。读取顺序控制电路获得当以数据从光盘读取数据时的第一总跳跃时间，其顺序为第一，第二，第三和第四文件以及当按照顺序读取数据时获取的第二总跳转时间第一，第三，第二和第四个文件。读取顺序控制电路确定第一总跳跃时间是否长于第二总跳跃时间。如果读取顺序控制电路确定第一总跳跃时间比第二总跳跃时间长，则读取顺序控制电路控制光头以从第一，第三，第二的顺序从光盘读取数据和第四个文件。

58. 发明授权

US5841185A Semiconductor device having CMOS transistors 失效
标题翻译：具有CMOS晶体管的半导体器件
公开(公告)号：US5841185A
公开(公告)日：1998-11-24
申请号：US601799
申请日：1996-02-15
申请人： Akio Ishikawa
发明人： Akio Ishikawa
IPC分类号： H01L21/76 , H01L21/765 , H01L21/8238 , H01L27/08 , H01L27/092 , H01L23/58
CPC分类号： H01L21/765 , H01L27/0928
摘要： A semiconductor device comprises a semiconductor substrate having N- and P-channel regions formed therein; a plurality of first transistors formed in the N-channel region; a first field shield element-isolation structure having a first shield plate electrode and formed in the N-channel region for isolating the first transistors from each other; a plurality of second transistors formed in the P-channel region; and a second field shield element-isolation structure having a second shield plate electrode electrically connected to the first shield plate electrode and formed in the P-channel region for isolating the second transistors from each other; wherein respective values of a threshold voltage V.sub.tN of a parasitic transistor formed in a field region of the N-channel region, a threshold voltage V.sub.tP of a parasitic transistor formed in a field region of the P-channel region and a potential V.sub.sP of the first or second shield plate electrode are determined so as to meet V.sub.tN -V.sub.tP >V.sub.cc -V.sub.ss and V.sub.tN >V.sub.sP -V.sub.ss >V.sub.tP +V.sub.cc -V.sub.ss, where V.sub.ss is a potential of the source of the first transistor, V.sub.cc is a potential of the source of the second transistor and V.sub.cc >V.sub.ss. Further, a method for manufacturing a semiconductor device as above-mentioned wherein the surface impurity concentration of at least one of the P-channel region and the N-channel region is determined by a desired threshold voltage of the MOS transistor formed in that region.
摘要翻译：半导体器件包括其中形成有N沟道区域和P沟道区域的半导体衬底; 形成在所述N沟道区域中的多个第一晶体管; 第一场屏蔽元件隔离结构，具有第一屏蔽板电极，并形成在所述N沟道区域中，用于将所述第一晶体管彼此隔离; 形成在所述P沟道区域中的多个第二晶体管; 以及第二场屏蔽元件隔离结构，具有电连接到所述第一屏蔽板电极并形成在所述P沟道区域中以将所述第二晶体管彼此隔离的第二屏蔽板电极; 其中形成在N沟道区域的场区域中的寄生晶体管的阈值电压VtN，形成在P沟道区域的场区域中的寄生晶体管的阈值电压VtP和第一或第二屏蔽板电极被确定为满足VtN-VtP> Vcc-Vss和VtN> VsP-Vss> VtP + Vcc-Vss，其中Vss是第一晶体管的源极的电位，Vcc是第二晶体管的源极和Vcc> Vss。此外，如上所述的半导体器件的制造方法，其中，通过在该区域中形成的MOS晶体管的期望阈值电压来确定P沟道区域和N沟道区域中的至少一个的表面杂质浓度。

59. 发明授权

US5714787A Semiconductor device with a reduced element isolation region 失效
标题翻译：具有减少的元件隔离区域的半导体器件
公开(公告)号：US5714787A
公开(公告)日：1998-02-03
申请号：US567770
申请日：1995-12-05
申请人： Kohei Eguchi , Akio Ishikawa
发明人： Kohei Eguchi , Akio Ishikawa
IPC分类号： H01L21/76 , H01L21/765 , H01L29/06 , H01L29/40 , H01L29/78 , H01L29/76 , H01L29/00
CPC分类号： H01L29/402 , H01L21/765
摘要： In a semiconductor device and a method for manufacturing the semiconductor device, a width of an element isolation region is reduced by a field-shield. A silicon oxide film of a side wall of a polycrystal silicon film is fabricated by thermally oxidizing a side wall of the polycrystal silicon film, while using a silicon nitride film as an antioxidation film. A width of a field-shield electrode made of the polycrystal silicon film is made smaller than a limit value of the very fine processing.
摘要翻译：在半导体器件和半导体器件的制造方法中，通过场屏蔽来减小元件隔离区域的宽度。在使用氮化硅膜作为抗氧化膜的同时，通过热氧化多晶硅膜的侧壁来制造多晶硅膜的侧壁的氧化硅膜。使由多晶硅膜制成的场屏蔽电极的宽度小于极细加工的极限值。

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