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    • 57. 发明授权
    • Thin film transistor substrate and thin film transistor used for the same
    • 薄膜晶体管基板和薄膜晶体管用于相同
    • US08242553B2
    • 2012-08-14
    • US12838954
    • 2010-07-19
    • Takahiro KorenariHiroshi Tanabe
    • Takahiro KorenariHiroshi Tanabe
    • H01L29/76
    • H01L27/1251H01L27/1214H01L29/78645H01L29/78648H01L29/7869H01L29/78696
    • A thin film transistor (TFT) substrate includes first and second TFTs on the same substrate. The first TFT has a feature that a lower conductive layer or a bottom gate electrode layer is provided between the substrate and a first insulating layer while an upper conductive layer or a top gate electrode layer is disposed on a second insulating layer formed on a semiconductor layer which is formed on the first insulating layer. The first conductive layer has first and second areas such that the first area overlaps with the first conductive layer without overlapping with the semiconductor layer while the second area overlaps with the semiconductor layer, and the first area is larger than the second area while the second insulating layer is thinner than the first insulating layer. The second TFT has the same configuration as the first TFT except that the gate electrode layer is eliminated.
    • 薄膜晶体管(TFT)基板在同一基板上包括第一和第二TFT。 第一TFT具有在基板和第一绝缘层之间设置下导电层或底栅极电极层的特征,而上导电层或顶栅电极层设置在形成于半导体层上的第二绝缘层上 其形成在第一绝缘层上。 第一导电层具有第一和第二区域,使得第一区域与第一导电层重叠而不与半导体层重叠,而第二区域与半导体层重叠,并且第一区域大于第二区域,而第二绝缘层 层比第一绝缘层薄。 除了除去栅电极层之外,第二TFT具有与第一TFT相同的结构。
    • 59. 发明申请
    • Semiconductor device, Manufacturing method for the same, and electronic device
    • 半导体装置及其制造方法以及电子装置
    • US20110001141A1
    • 2011-01-06
    • US12923281
    • 2010-09-13
    • Hiroshi Tanabe
    • Hiroshi Tanabe
    • H01L27/12H01L21/336
    • H01L29/66742H01L27/11502H01L27/11507H01L27/1214H01L27/1255H01L27/13H01L28/55H01L29/6684
    • A manufacturing method for a semiconductor device, the method including forming a thin film transistor by forming a polysilicon thin film on an insulating substrate, forming a gate electrode via a gate insulating film, and forming source/drain regions and a channel region by ion implantation in the polysilicon thin film by using the gate electrode as a mask, forming an interconnection layer on an interlayer dielectric film covering this thin film transistor and forming a first contact to be connected to the thin film transistor through the interlayer dielectric film, forming a silicon hydronitride film on the interlayer dielectric film so as to cover the interconnection layer, forming a lower electrode on this silicon hydronitride film and forming a second contact to be connected to the interconnection layer through the silicon hydronitride film, and forming a ferroelectric layer on the lower electrode.
    • 一种半导体器件的制造方法,所述方法包括通过在绝缘基板上形成多晶硅薄膜来形成薄膜晶体管,通过栅极绝缘膜形成栅极电极,并通过离子注入形成源极/漏极区域和沟道区域 在通过使用栅电极作为掩模的多晶硅薄膜中,在覆盖该薄膜晶体管的层间电介质膜上形成互连层,并通过层间绝缘膜形成与薄膜晶体管连接的第一接触,形成硅 在层间电介质膜上形成氢化氮化物膜,以覆盖互连层,在该硅氢化硅膜上形成下电极,并形成通过硅氢化硅膜与互连层连接的第二接触,并在下层形成铁电层 电极。
    • 60. 发明申请
    • SOLID IMMERSION LENS HOLDER
    • 固体透镜镜架
    • US20100172035A1
    • 2010-07-08
    • US12664105
    • 2008-06-13
    • Hirotoshi TeradaHiroshi Tanabe
    • Hirotoshi TeradaHiroshi Tanabe
    • G02B7/02
    • G02B21/33G01N21/9501G02B7/022G02B21/0016G02B21/02G02B21/248
    • A solid immersion lens holder 200 includes a holder main body 8 having a lens holding unit 60 that holds a solid immersion lens 6, and an objective lens socket 9 for attaching the holder main body 8 to a front end of an objective lens 21. The solid immersion lens 6 is held in a state of being unfixed to be free with respect to the lens holding unit 60. A vibration generator unit 120 that causes the holder main body 8 to vibrate is attached to the objective lens socket 9. The vibration generator unit 120 has a vibrating motor 140 held by a motor holding member 130, and a weight 142 structured to be eccentric by weight is attached to an output shaft 141 of the vibrating motor 140. A vibration generated in the vibration generator unit 120 is transmitted to the solid immersion lens 6 via the objective lens socket 9 and the holder main body 8. Thereby, achieving the solid immersion lens holder capable of improving the close contact between the solid immersion lens and an observation object.
    • 固体浸没透镜保持器200包括具有保持固体浸没透镜6的透镜保持单元60的保持器主体8和用于将保持器主体8附接到物镜21的前端的物镜插座9。 固体浸没透镜6被保持为相对于透镜保持单元60不固定的状态。使保持器主体8振动的振动发生器单元120附接到物镜插座9.振动发生器 单元120具有由电动机保持构件130保持的振动电动机140,并且被构造为重量偏心的重物142附接到振动电动机140的输出轴141.在振动发生器单元120中产生的振动被传递到 固体浸没透镜6经由物镜插座9和保持器本体8.由此,实现能够改善固体浸没透镜和观察对象之间的紧密接触的固体浸没透镜保持器。