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51. 发明授权

US06660606B2 Semiconductor-on-insulator annealing method 失效
标题翻译：绝缘子半导体退火方法
公开(公告)号：US06660606B2
公开(公告)日：2003-12-09
申请号：US09963449
申请日：2001-09-27
申请人： Hiroshi Miyabayashi , Nobuhiko Sato , Masataka Ito
发明人： Hiroshi Miyabayashi , Nobuhiko Sato , Masataka Ito
IPC分类号： H01L21336
CPC分类号： H01L21/76259
摘要： The number of defects (HF defects) in the SOI layer of an SOI substrate is reduced. In an annealing method of annealing an SOI substrate in a reducing atmosphere at a temperature equal to or less than the melting point of a semiconductor, annealing is executed in a state wherein a flow of a reducing atmospheric gas parallel to the surface of the SOI substrate is generated near this surface.
摘要翻译： SOI衬底的SOI层中的缺陷数（HF缺陷）减少。在还原性气氛中，在半导体的熔点以下的温度退火SOI衬底的退火方法中，在与SOI衬底的表面平行的还原气氛气体的流动的状态下进行退火在该表面附近产生。

52. 发明授权

US06616552B2 Golf ball 有权
标题翻译：高尔夫球
公开(公告)号：US06616552B2
公开(公告)日：2003-09-09
申请号：US09534565
申请日：2000-03-27
申请人： Rinya Takesue , Yasushi Ichikawa , Shunichi Kashiwagi , Nobuhiko Sato
发明人： Rinya Takesue , Yasushi Ichikawa , Shunichi Kashiwagi , Nobuhiko Sato
IPC分类号： A63B3712
CPC分类号： A63B37/12 , A63B37/0003 , A63B37/0024 , A63B37/0031 , A63B37/0033 , A63B37/0035 , A63B37/0045 , A63B37/0047 , A63B37/0052 , A63B37/0074 , A63B37/0075 , A63B37/0076 , A63B37/008 , A63B37/0083 , A63B37/0084
摘要： In a golf ball including a core and a cover of at least one layer, the cover layer is formed of a heated mixture of an ionomer resin and a metal salt such as magnesium stearate. The heated mixture exhibits such a crystal melting behavior that when measured by DSC, the difference between first and second peak temperature is up to 30° C. The ball is improved in resilience.
摘要翻译：在包括芯和至少一层的覆盖物的高尔夫球中，覆盖层由离聚物树脂和金属盐如硬脂酸镁的加热混合物形成。加热的混合物表现出这样的晶体熔融行为，当通过DSC测量时，第一和第二峰值温度之间的差异达到30℃。弹性提高了球。

53. 发明授权

US06593211B2 Semiconductor substrate and method for producing the same 失效
标题翻译：半导体衬底及其制造方法
公开(公告)号：US06593211B2
公开(公告)日：2003-07-15
申请号：US09390283
申请日：1999-09-03
申请人： Nobuhiko Sato
发明人： Nobuhiko Sato
IPC分类号： H01L2130
CPC分类号： H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L21/76259
摘要： There are disclosed a semiconductor substrate having a non-porous monocrystalline layer with reduced crystal defects on a porous silicon layer and a method of forming the substrate. The forming method comprises a heat treatment step of heat-treating a porous silicon layer in an atmosphere not containing a silicon-based gas and the step of growing a non-porous monocrystalline layer on the porous silicon layer, wherein the heat treatment is conducted under the conditions such that the etched thickness of the silicon layer is 2 nm or less and that the rate of change r of the surface pore density of the porous silicon layer (r=surface pore density after heat treatment/surface pore density before heat treatment) satisfies the relationship 1/10000≦r≦1.
摘要翻译：公开了一种半导体衬底，其具有在多孔硅层上具有减小的晶体缺陷的非多孔单晶层和形成衬底的方法。成形方法包括热处理步骤，其在大气中热处理多孔硅层含有硅基气体的步骤以及在所述多孔硅层上生长无孔单晶层的步骤，其中所述热处理在所述硅层的蚀刻厚度为2nm以下的条件下进行，的多孔硅层的表面孔密度的变化率r（r =热处理后的表面孔密度/热处理前的表面孔密度）满足1/10000 <= r <1的关系。

54. 发明授权

US06569748B1 Substrate and production method thereof 失效
标题翻译：基材及其制备方法
公开(公告)号：US06569748B1
公开(公告)日：2003-05-27
申请号：US09706877
申请日：2000-11-07
申请人： Kiyofumi Sakaguchi , Nobuhiko Sato
发明人： Kiyofumi Sakaguchi , Nobuhiko Sato
IPC分类号： H01L2122
CPC分类号： H01L21/2007
摘要： There are provided a method of producing an SOI wafer of high quality with excellent controllability, productivity and economy and a wafer produced by such a method. In the method of producing a substrate utilizing wafer bonding, a first substrate member and a second substrate member are mutually bonded, and then the second substrate member is separated from the first substrate member at the interface of a first layer and a second layer formed on the main surface of the first substrate member, whereby the second layer is transferred onto the second substrate member. In the separation, the separation position at the interface of the first and the second layers is ensured by varying the porosity of a porous Si layer, forming an easily separable plane by the coagulation of pores in porous Si, effecting ion implantation to the interface or utilizing a heteroepitaxial interface.
摘要翻译：提供了一种制造具有优异的可控性，生产率和经济性的高质量的SOI晶片的方法和通过这种方法制造的晶片。在利用晶片接合的基板的制造方法中，将第一基板部件和第二基板部件相互结合，然后将第二基板部件与第一基板部件在形成在第一基板部件第一基板部件的主表面，由此将第二层转移到第二基板部件上。在分离中，通过改变多孔Si层的孔隙率来确保第一层和第二层的界面处的分离位置，通过多孔Si中的孔的凝结形成容易分离的平面，进行离子注入界面或利用异质外延界面。

55. 发明授权

US06375738B1 Process of producing semiconductor article 失效
标题翻译：半导体制品生产工艺
公开(公告)号：US06375738B1
公开(公告)日：2002-04-23
申请号：US09534068
申请日：2000-03-24
申请人： Nobuhiko Sato
发明人： Nobuhiko Sato
IPC分类号： C30B2518
CPC分类号： H01L21/76259 , H01L21/306 , Y10S117/915
摘要： A process of producing a semiconductor article is disclosed which comprises the steps of epitaxially growing on at least one surface of a single-crystal substrate a plurality of single-crystal semiconductor layers differing from each other in at least one of the kind and the concentration of an impurity, making porous the plurality of single-crystal semiconductor layers so as to form a high porosity layer and a low porosity layer, forming a non-porous single-crystal layer on a surface of the single-crystal semiconductor layer as made porous, and bonding and single-crystal substrate and a support substrate to each other, wherein the bonded single-crystal substrate and support substrate are separated at at least one of a location in the high porosity layer and an interface of the high porosity layer with a layer adjacent thereto.
摘要翻译：公开了一种制造半导体产品的方法，其包括以下步骤：在单晶衬底的至少一个表面上外延生长至少一种不同类型和浓度的多个单晶半导体层，使多个单晶半导体层多孔化，从而形成高孔隙率层和低孔隙率层，在单晶半导体层的表面上形成多孔的多孔单晶层，以及接合和单晶基板和支撑基板，其中所述结合的单晶基板和支撑基板在高孔隙率层的位置和高孔隙率层的界面中的至少一个与层相邻。

56. 发明授权

US06350703B1 Semiconductor substrate and production method thereof 失效
标题翻译：半导体衬底及其制造方法
公开(公告)号：US06350703B1
公开(公告)日：2002-02-26
申请号：US09347260
申请日：1999-07-06
申请人： Kiyofumi Sakaguchi , Nobuhiko Sato
发明人： Kiyofumi Sakaguchi , Nobuhiko Sato
IPC分类号： H01L2131
CPC分类号： H01L21/76243 , C30B29/06 , C30B31/22
摘要： A method of producing an SOI substrate is disclosed which comprises a step of preparing an Si substrate prepared by the floating zone process (FZ process), a step of implanting oxygen ions from the principal surface side of the Si substrate thereinto to form an ion-implanted layer in the Si substrate, and a buried Si oxide layer forming step of forming an Si oxide layer buried below the single-crystal Si layer on the principal surface side, by a heat treatment of the Si substrate.
摘要翻译：公开了一种制造SOI衬底的方法，其包括制备通过浮动区工艺（FZ工艺）制备的Si衬底的步骤，从Si衬底的主表面侧注入氧离子以形成离子 - 并且通过Si衬底的热处理，在主表面侧上形成埋在单晶Si层之下的Si氧化物层的掩埋Si氧化物层形成步骤。

57. 发明授权

US06326279B1 Process for producing semiconductor article 失效
标题翻译：半导体制品的制造方法
公开(公告)号：US06326279B1
公开(公告)日：2001-12-04
申请号：US09532079
申请日：2000-03-21
申请人： Yasuo Kakizaki , Takao Yonehara , Nobuhiko Sato
发明人： Yasuo Kakizaki , Takao Yonehara , Nobuhiko Sato
IPC分类号： H01L2176
CPC分类号： H01L21/76259
摘要： To lessen the number of steps and reduce cost in the manufacture of high-quality SOI substrate, a process for producing a semiconductor article comprises the steps of forming a porous semiconductor layer at at least one surface of a first substrate, forming a non-porous single-crystal semiconductor layer on the porous semiconductor layer, bonding the first substrate to a second substrate with the former's non-porous single-crystal semiconductor layer facing the latter in contact, to form a bonded structure, and dividing the bonded structure at the porous semiconductor layer, wherein the process further comprises the step of previously forming on the one surface of the first substrate an epitaxial silicon layer in a thickness at least n-times (n≧2) the thickness of the porous semiconductor layer.
摘要翻译：为了减少步骤数量并降低制造高质量SOI衬底的成本，制造半导体产品的方法包括以下步骤：在第一衬底的至少一个表面上形成多孔半导体层，形成无孔在多孔半导体层上形成单晶半导体层，将第一衬底与第二衬底接合，使前者的无孔单晶半导体层面向后面的非多孔单晶半导体层接触，形成接合结构，并将接合结构分为多孔半导体层，其中所述工艺还包括以下步骤：在所述第一衬底的所述一个表面上形成厚度至少为所述多孔半导体层的厚度的n倍（n≥2）的厚度的外延硅层。

58. 发明授权

US06313014B1 Semiconductor substrate and manufacturing method of semiconductor substrate 有权
标题翻译：半导体衬底及半导体衬底的制造方法
公开(公告)号：US06313014B1
公开(公告)日：2001-11-06
申请号：US09332102
申请日：1999-06-14
申请人： Kiyofumi Sakaguchi , Nobuhiko Sato
发明人： Kiyofumi Sakaguchi , Nobuhiko Sato
IPC分类号： H01L2972
CPC分类号： H01L21/76243
摘要： A single-crystal silicon substrate having a surface layer which has been heat-treated in a reducing atmosphere containing hydrogen is prepared. An ion-implantation layer is formed by implanting oxygen ions. Subsequently, a buried oxide film (BOX) layer is formed by a desired heat-treatment utilizing the ion-implantation layer. An SOI substrate having a single-crystal silicon layer (SOI layer) which is formed on the BOX layer and has a remarkably reduced number of defects such as COPs is obtained.
摘要翻译：制备具有在含有还原气氛中进行热处理的表面层的单晶硅基板。通过注入氧离子形成离子注入层。随后，通过利用离子注入层的期望的热处理形成掩埋氧化膜（BOX）层。获得了在BOX层上形成单晶硅层（SOI层）的SOI衬底，并且具有明显减少的诸如COP的缺陷数量。

59. 发明授权

US06171982B2 Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same 有权
标题翻译：用于对SOI衬底进行热处理的方法和装置及其制备方法
公开(公告)号：US06171982B2
公开(公告)日：2001-01-09
申请号：US09218416
申请日：1998-12-22
申请人： Nobuhiko Sato
发明人： Nobuhiko Sato
IPC分类号： H01L2126
CPC分类号： H01L21/3247 , H01L21/67115 , H01L21/76254 , H01L21/76256 , H01L21/76259
摘要： An SOI substrate having on the surface thereof a single crystal silicon film formed on an insulator is heat-treated in a hydrogen-containing reducing atmosphere in order to smooth the surface and reduce the boron concentration without damaging the film thickness uniformity in a single wafer and among different wafers. The method is characterized in that the single crystal silicon film is arranged opposite to a member of non-oxidized silicon for heat treatment.
摘要翻译：在其表面上形成有绝缘体的单晶硅膜的SOI衬底在含氢还原气氛中进行热处理，以平滑表面并降低硼浓度，而不损害单个晶片中的膜厚度均匀性，在不同的晶片之间。该方法的特征在于，将单晶硅膜与非氧化硅的构件相对地进行热处理。

60. 发明授权

US06103598A Process for producing semiconductor substrate 失效
标题翻译：半导体衬底的制造方法
公开(公告)号：US06103598A
公开(公告)日：2000-08-15
申请号：US678694
申请日：1996-07-11
申请人： Kenji Yamagata , Takao Yonehara , Nobuhiko Sato , Kiyofumi Sakaguchi
发明人： Kenji Yamagata , Takao Yonehara , Nobuhiko Sato , Kiyofumi Sakaguchi
IPC分类号： H01L21/306 , H01L21/762
CPC分类号： H01L21/76256 , H01L21/0203 , H01L21/76243
摘要： A process for producing a semiconductor substrate is provided which comprises providing a first substrate made of silicon having a porous silicon layer formed thereon by making porous the substrate silicon and a nonporous monocrystalline silicon layer epitaxially grown on the porous silicon layer, laminating the first substrate onto a second substrate in a state that at least one of lamination faces of the first and the second substrates has a silicon oxide layer and the nonporous monocrystalline silicon layer is interposed between the laminated substrates, and removing the porous silicon layer by etching, wherein the porous silicon layer is removed by etching with an etchant which etches the nonporous monocrystalline silicon layer and the silicon oxide layer at respective etching rates of not more than 10 angstroms per minute.
摘要翻译：提供一种制造半导体衬底的方法，其包括：通过使衬底硅多孔化和多孔硅层上外延生长的无孔单晶硅层，提供由其上形成有多孔硅层的硅制成的第一衬底，将第一衬底层压到第二基板，其中第一和第二基板的至少一个层叠面具有氧化硅层，并且无孔单晶硅层插入在层压基板之间，并且通过蚀刻去除多孔硅层，其中多孔通过蚀刻除去硅层，蚀刻剂以不大于10埃每分钟的蚀刻速率蚀刻无孔单晶硅层和氧化硅层。

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