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    • 52. 发明授权
    • Apparatus for detecting defect sizes in polysilicon and source-drain
semiconductor devices and method for making the same
    • 用于检测多晶硅和源极 - 漏极半导体器件中的缺陷尺寸的装置及其制造方法
    • US6001663A
    • 1999-12-14
    • US280997
    • 1999-03-30
    • Zhi-Min LingYung-Tao LinYing Shiau
    • Zhi-Min LingYung-Tao LinYing Shiau
    • H01L23/544H01L21/66
    • H01L22/34H01L2924/0002
    • An apparatus and method for detecting defect sizes in polysilicon and source-drain semiconductor devices and methods for making the same. Implemented is a double bridge test structure that includes a resistor path of first semiconductor material, such as doped silicon comprising a plurality of strip segments and with interconnection segments. A plurality of strips of second semiconductor material having a substantially lower resistivity are connected to form parallel circuit interconnections with the corresponding strip segments. The test structure is formed by masking techniques wherein a prescribed mask region enables portions of the silicon resistor or deposited polysilicon to be selectively silicided to form silicide and polycide, respectively. One embodiment for testing for defects in a polysilicon layer uses polycide as the low-resistivity strips, enabling the testing of open and short-circuit defects. A second embodiment selectively silicides exposed portions of a source-drain resistor, thereby enabling testing for defects in a source-drain layer of a metal oxide semiconductor. Defect sizes are determined by comparing the measured resistance values with predetermined width and spacings of the strips.
    • 用于检测多晶硅和源极 - 漏极半导体器件中的缺陷尺寸的装置和方法及其制造方法。 实现的是双桥测试结构,其包括第一半导体材料的电阻器路径,例如包括多个条带段和互连段的掺杂硅。 连接具有基本上较低电阻率的多个第二半导体材料带,以形成与相应条带段的并联电路互连。 测试结构通过掩模技术形成,其中规定的掩模区域使得硅电阻器或沉积的多晶硅的部分分别被选择性地硅化以形成硅化物和多硅化物。 用于测试多晶硅层中的缺陷的一个实施例使用聚硅氧烷作为低电阻率带,能够测试开路和短路缺陷。 第二实施例选择性地硅化源极 - 漏极电阻器的暴露部分,从而能够测试金属氧化物半导体的源极 - 漏极层中的缺陷。 通过将测得的电阻值与条的预定宽度和间距进行比较来确定缺陷尺寸。
    • 54. 发明授权
    • Structures to extract defect size information of poly and source-drain
semiconductor devices and method for making the same
    • 提取多晶硅和源极 - 漏极半导体器件的缺陷尺寸信息的结构及其制造方法
    • US5670891A
    • 1997-09-23
    • US477384
    • 1995-06-07
    • Zhi-Min LingYung-Tao LinYing Shiau
    • Zhi-Min LingYung-Tao LinYing Shiau
    • H01L23/544G01R31/26
    • H01L22/34H01L2924/0002
    • An apparatus and method for detecting defect sizes in polysilicon and source-drain semiconductor devices and methods for making the same. Implemented is a double bridge test structure that includes a resistor path of first semiconductor material, such as doped silicon comprising a plurality of strip segments and with interconnection segments. A plurality of strips of second semiconductor material having a substantially lower resistivity are connected to form parallel circuit interconnections with the corresponding strip segments. The test structure is formed by masking techniques wherein a prescribed mask region enables portions of the silicon resistor or deposited polysilicon to be selectively silicided to form silicide and polycide, respectively. One embodiment for testing for defects in a polysilicon layer uses polycide as the low-resistivity strips, enabling the testing of open and short-circuit defects. A second embodiment selectively silicides exposed portions of a source-drain resistor, thereby enabling testing for defects in a source-drain layer of a metal oxide semiconductor. Defect sizes are determined by comparing the measured resistance values with predetermined width and spacings of the strips.
    • 用于检测多晶硅和源极 - 漏极半导体器件中的缺陷尺寸的装置和方法及其制造方法。 实现的是双桥测试结构,其包括第一半导体材料的电阻器路径,例如包括多个条带段和互连段的掺杂硅。 连接具有基本上较低电阻率的多个第二半导体材料带,以形成与相应条带段的并联电路互连。 测试结构通过掩模技术形成,其中规定的掩模区域使得硅电阻器或沉积的多晶硅的部分分别被选择性地硅化以形成硅化物和多硅化物。 用于测试多晶硅层中的缺陷的一个实施例使用聚硅氧烷作为低电阻率带,能够测试开路和短路缺陷。 第二实施例选择性地硅化源极 - 漏极电阻器的暴露部分,从而能够测试金属氧化物半导体的源极 - 漏极层中的缺陷。 通过将测得的电阻值与条的预定宽度和间距进行比较来确定缺陷尺寸。
    • 59. 发明授权
    • Mobile terminal
    • 移动终端
    • US08542479B2
    • 2013-09-24
    • US13007476
    • 2011-01-14
    • Zhi Min ChooYoung In Park
    • Zhi Min ChooYoung In Park
    • H05K5/00
    • H04M1/0237H04M1/022H04M2250/16
    • A mobile terminal of a slide type having a dual display is disclosed, by which if an open configuration has been entered after sequential completion of slidable and rotary movements, two displays are located on the same plane in an open configuration to provide various user interface environments. The present invention includes a first body, a second body slidably connected to the first body, and a slide hinge module configured to guide a slidable movement of the second body on the first body to open the first body, the slide hinge module configured to guide a rotary movement of the second body against the first body in case of an open configuration of a partial region of the first body.
    • 公开了具有双重显示器的滑盖类型的移动终端,如果在顺序完成可滑动和旋转运动之后已经进入打开配置,则两个显示器在打开配置中位于同一平面上,以提供各种用户界面环境 。 本发明包括第一主体,可滑动地连接到第一主体的第二主体和被配置为将第二主体的可滑动运动引导到第一主体上以打开第一主体的滑动铰链模块,所述滑动铰链模块被配置为引导 在第一主体的部分区域的打开构造的情况下,第二主体抵靠第一主体的旋转运动。