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51. 发明申请

US20070042513A1 Electron beam exposure method, hot spot detecting apparatus, semiconductor device manufacturing method, and computer program product 失效
标题翻译：电子束曝光方法，热点检测装置，半导体器件制造方法和计算机程序产品
公开(公告)号：US20070042513A1
公开(公告)日：2007-02-22
申请号：US11504666
申请日：2006-08-16
申请人： Tetsuro Nakasugi
发明人： Tetsuro Nakasugi
IPC分类号： H01L21/66 , G01N23/00
CPC分类号： G01N23/00 , G01R31/305 , Y10S430/143
摘要： An EB exposure method includes dividing drawing layer pattern to be transferred onto drawing layer by EB exposure and underlying pattern to be transferred onto an underlying layer of the drawing layer by the EB exposure respectively into unit regions, setting representative figure in each of the unit regions of the drawing and underlying layers, the representative figure set in each of the unit regions of the drawing layer corresponding to the drawing layer pattern of each of the unit regions of the drawing layer, the representative figure set in each of the unit regions of the underlying layer corresponding to the underlying layer pattern of each of the unit regions of the underlying layer, and obtaining influence of proximity effect of an arbitrary region of the drawing layer pattern, based on the representative figure that corresponds to the drawing and underlying layer patterns.
摘要翻译： EB曝光方法包括通过EB曝光将下层图案划分到绘图层上并通过EB曝光转移到绘图层的下层上，分别形成单元区域，在每个单位区域中设置代表性图形的图形和下层的每个单元区域中的每个单元区域中的代表性图形对应于绘图层的每个单位区域的绘制层图案，在每个单元区域中设置的代表性图形下层对应于下层的每个单位区域的下层图案，并且基于对应于附图和下层图案的代表性图来获得绘图层图案的任意区域的邻近效应的影响。

52. 发明申请

US20060289797A1 Electron beam writing method, electron beam writing apparatus and semiconductor device manufacturing method 失效
标题翻译：电子束写入方法，电子束写入装置和半导体器件的制造方法
公开(公告)号：US20060289797A1
公开(公告)日：2006-12-28
申请号：US11409987
申请日：2006-04-25
申请人： Ryoichi Inanami , Tetsuro Nakasugi
发明人： Ryoichi Inanami , Tetsuro Nakasugi
IPC分类号： A61N5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： An electron beam writing method is disclosed, which includes preparing electron beam writing data structured from writing pattern data expressed by both data of VSB shots which are units of shaping beams at the time of carrying out writing a pattern and data of CP shots serving as bases of a repeating pattern, and CP aperture data into which identification numbers IDs and opening positions of respective openings of a CP aperture having openings for VSB shots and openings for CP shots are described, inputting the electron beam writing data to an electron beam writing apparatus, and expanding the electron beam writing data into data of the respective shots defined in the electron beam writing data, determining irradiation times of the respective expanded shots while correcting shot positions, and outputting control signals corresponding to shot data to repeat a shot of a desired pattern, by the electron beam writing apparatus.
摘要翻译：公开了一种电子束写入方法，其中包括准备电子束写入数据，该电子束写入数据由写入模式数据构成，该模式数据由作为执行写入模式时的整形波束的单元的VSB镜头的数据和用作基础的CP镜头的数据表示描述了CP电子束写入数据到电子束写入装置的CP孔径数据，CP孔径数据ID和具有用于VSB镜头的开口的CP孔的各个开口的打开位置和CP镜头的开口位置，并且将电子束写入数据扩展为在电子束写入数据中定义的各个镜头的数据，同时在校正镜头位置的同时确定各个扩展镜头的照射时间，并且输出对应于镜头数据的控制信号以重复所需图案的镜头，由电子束写入装置。

53. 发明申请

US20060151721A1 Electron beam drawing apparatus, deflection amplifier, deflection control device, electron beam drawing method, method of manufacturing semiconductor device, and electron beam drawing program 有权
标题翻译：电子束描绘装置，偏转放大器，偏转控制装置，电子束描绘法，半导体装置的制造方法以及电子束绘制程序
公开(公告)号：US20060151721A1
公开(公告)日：2006-07-13
申请号：US11268603
申请日：2005-11-08
申请人： Tetsuro Nakasugi , Kazuo Tawarayama , Hiroyuki Mizuno , Takumi Ota , Noriaki Sasaki , Tatsuhiko Higashiki , Takeshi Koshiba , Shunko Magoshi
发明人： Tetsuro Nakasugi , Kazuo Tawarayama , Hiroyuki Mizuno , Takumi Ota , Noriaki Sasaki , Tatsuhiko Higashiki , Takeshi Koshiba , Shunko Magoshi
IPC分类号： G21K5/10
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J2237/15 , H01J2237/30433
摘要： According to an aspect of the invention, there is provided an electron beam drawing apparatus comprising at least one stage of a deflection amplifier and a deflection unit, a first storage section which stores shot information at a drawing time, a second storage section which stores a correction table indicating a relation between the shot information and an output voltage of the deflection amplifier, and an adjusting section which adjusts an output of the deflection amplifier based on the correction table stored in the second storage section and the shot information stored in the first storage section.
摘要翻译：根据本发明的一个方面，提供了一种电子束描绘装置，其包括偏转放大器和偏转单元的至少一个级，在绘制时存储镜头信息的第一存储部分，指示拍摄信息和偏转放大器的输出电压之间的关系的校正表以及基于存储在第二存储部中的校正表来调整偏转放大器的输出的调节部和存储在第一存储部部分。

54. 发明申请

US20060063078A1 Exposure parameter obtaining method, exposure parameter evaluating method, semiconductor device manufacturing method, charged beam exposure apparatus, and method of the same 失效
公开(公告)号：US20060063078A1
公开(公告)日：2006-03-23
申请号：US11268526
申请日：2005-11-08
申请人： Tetsuro Nakasugi
发明人： Tetsuro Nakasugi
IPC分类号： G03C5/00 , A61N5/00 , G21G5/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3174 , Y10S430/143
摘要： An exposure parameter obtaining method comprising forming a charged reference pattern and a plurality of charged exposure patterns at a surface region of a to-be-exposed insulation substrate by projecting a charged beam with a first incident energy using a reference pattern whose exposure parameter has been known beforehand and all of selected exposure patterns to be corrected, forming electron signal images for the charged reference pattern and the plurality of charged exposure patterns on the basis of charged particles including secondary electrons by scanning the surface of the insulation substrate with a charged beam with a second incident energy lower than the first incident energy, and creating, on the basis of the electron signal images, the exposure parameters including at least one of position, focal point, astigmatism, rotation, and magnification for all of the selected exposure patterns to be corrected.

55. 发明授权

US06512237B2 Charged beam exposure method and charged beam exposure apparatus 失效
公开(公告)号：US06512237B2
公开(公告)日：2003-01-28
申请号：US10075370
申请日：2002-02-15
申请人： Tetsuro Nakasugi , Yuichiro Yamazaki , Hideaki Abe
发明人： Tetsuro Nakasugi , Yuichiro Yamazaki , Hideaki Abe
IPC分类号： H01J37304
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/3175 , Y10S430/143
摘要： A charged beam exposing method comprises a step of applying a voltage to a sample to thereby form an acceleration electric field on the sample, a step of accelerating an electron beam emitted from an electron gun and scanning an alignment mark formed on the sample with the electron beam, a step of detecting back-scattered electrons and secondary electrons, generated from the alignment mark, by means of a detector, a step of acquiring the position of the alignment mark based on a signal waveform detected, a step of eliminating or reducing the acceleration electric field by changing the applied voltage to the sample, and a step of exposing a pattern with the electron beam emitted from the electron gun based on information of the position of the alignment mark.

56. 发明授权

US06507034B1 Charge beam exposure apparatus, charge beam exposure method, and charge beam exposure mask 失效
标题翻译：充电束曝光装置，电荷束曝光方法和电荷束曝光掩模
公开(公告)号：US06507034B1
公开(公告)日：2003-01-14
申请号：US09658506
申请日：2000-09-08
申请人： Tetsuro Nakasugi
发明人： Tetsuro Nakasugi
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31761
摘要： There are provided a second aperture having a beam adjustment opening group and a pattern exposure opening group, a stage for mounting a wafer to which a pattern should be transferred, and a control computer for controlling an electron beam to be irradiated onto the wafer. The control computer has a drawing parameter table which stores an optimum beam adjustment parameter for an electron beam using a pattern density as a parameter. A pattern is transferred by selecting an optimum beam adjustment parameter corresponding to the pattern density from the drawing parameter table for each pattern.
摘要翻译：提供了具有光束调节开口组和图案曝光开口组的第二孔，用于安装应该转印图案的晶片的台，以及用于控制要照射到晶片上的电子束的控制计算机。控制计算机具有图形参数表，其使用图案密度作为参数存储用于电子束的最佳光束调整参数。通过从每个图案的绘制参数表中选择与图案密度对应的最佳光束调整参数来传送图案。

57. 发明授权

US6093931A Pattern-forming method and lithographic system 失效
标题翻译：图案形成方法和平版印刷系统
公开(公告)号：US6093931A
公开(公告)日：2000-07-25
申请号：US410018
申请日：1999-10-01
申请人： Kazuyoshi Sugihara , Hiromi Niiyama , Shunko Magoshi , Atsushi Ando , Tetsuro Nakasugi , Shinji Sato , Yumi Watanabe , Yosimitu Kato , Toru Shibata , Katsuya Okumura
发明人： Kazuyoshi Sugihara , Hiromi Niiyama , Shunko Magoshi , Atsushi Ando , Tetsuro Nakasugi , Shinji Sato , Yumi Watanabe , Yosimitu Kato , Toru Shibata , Katsuya Okumura
IPC分类号： H01L21/027 , G03F7/20 , H01J37/317 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/203 , G03F7/2059 , G03F7/7045 , H01J37/3174
摘要： A rough pattern exceeding the resolution limit of light exposure is formed by light resolution. A fine pattern not exceeding the resolution limit of light exposure is formed by charge-beam exposure. Combining the rough pattern and the fine pattern produces a desired pattern. The sharing of the work between light exposure and charge-beam exposure exhibits the high throughput of light exposure and the excellent resolving power of charge-beam exposure.
摘要翻译：通过光分辨率形成超过曝光分辨率极限的粗糙图案。通过电荷束曝光形成不超过曝光的分辨率极限的精细图案。结合粗糙图案和精细图案产生期望的图案。曝光和电荷束曝光之间的工作共享表现出高曝光量和电荷束曝光的优异分辨能力。

58. 发明授权

US5933211A Charged beam lithography apparatus and method thereof 失效
标题翻译：带电光束光刻设备及其方法
公开(公告)号：US5933211A
公开(公告)日：1999-08-03
申请号：US917212
申请日：1997-08-25
申请人： Tetsuro Nakasugi , Yumi Watanabe
发明人： Tetsuro Nakasugi , Yumi Watanabe
IPC分类号： G21K5/04 , G01Q60/00 , G03F7/20 , H01J37/04 , H01J37/304 , H01J37/305 , H01J37/317 , H01L21/027 , G03B27/00 , G01N23/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3045 , H01J37/3174 , H01J37/3177 , H01J2237/31774
摘要： A charged beam lithography apparatus simultaneously uses multiple charged beams to irradiate a workpiece. In specific embodiments, collimators are employed to assist in aligning the multiple charged beams by eliminating "noise" from reflections of other beams. Each collimator is positioned to correspond with respective of the charged beams and detectors for detecting reflected particles from the charged beams. The particles are reflected from particular marks used in the alignment process. Each collimator helps to prevent particles from adjacent charged beams from entering a detector that corresponds with a specific charged beam.
摘要翻译：带电光束光刻设备同时使用多个带电光束照射工件。在具体实施例中，准直仪用于通过从其他光束的反射中消除“噪声”来帮助对准多个带电波束。每个准直器被定位成对应于相应的带电束和检测器，用于检测来自带电束的反射粒子。颗粒从对准过程中使用的特定标记反射。每个准直器有助于防止相邻带电光束的粒子进入与特定带电束对应的检测器。

59. 发明授权

US08973494B2 Imprint method and imprint apparatus 有权
标题翻译：压印方法和压印装置
公开(公告)号：US08973494B2
公开(公告)日：2015-03-10
申请号：US13023225
申请日：2011-02-08
申请人： Masayuki Hatano , Ikuo Yoneda , Tetsuro Nakasugi , Kenji Ooki
发明人： Masayuki Hatano , Ikuo Yoneda , Tetsuro Nakasugi , Kenji Ooki
IPC分类号： G03F7/00 , B82Y10/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： According to one embodiment, an imprint method is disclosed. The method can include forming a liquid droplet of a transfer material with a volume greater than a predetermined reference volume by dropping the transfer material onto a major surface of a processing substrate. The method can include reducing the volume of the liquid droplet to be less than the reference volume by volatilizing the liquid droplet. In addition, the method can include filling the transfer material into a recess provided in a transfer surface of a template by bringing the liquid droplet having the volume reduced to be less than the reference volume into contact with the transfer surface of the template.
摘要翻译：根据一个实施例，公开了压印方法。该方法可以包括通过将转印材料落到处理衬底的主表面上来形成体积大于预定参考体积的转印材料的液滴。该方法可以包括通过挥发液滴来将液滴的体积减小到小于参考体积。此外，该方法可以包括通过使体积减小到小于参考体积的液滴与模板的转印表面接触来将转印材料填充到设置在模板的转印表面中的凹部中。

60. 发明授权

US08202463B2 Imprint method 有权
标题翻译：印记法
公开(公告)号：US08202463B2
公开(公告)日：2012-06-19
申请号：US12426527
申请日：2009-04-20
申请人： Ikuo Yoneda , Tetsuro Nakasugi , Shinji Mikami
发明人： Ikuo Yoneda , Tetsuro Nakasugi , Shinji Mikami
IPC分类号： B29C59/00
CPC分类号： B29C37/006 , B29C35/0888 , B29C37/0053 , B29C2035/0827 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： An imprint method includes contacting a template on a first substrate. The template includes a pattern to be transferred on the first substrate. The first substrate includes a first semiconductor substrate, and a first light curable resin coated on the first semiconductor substrate. The method further includes separating the template from the first substrate, and removing particles adhered on the template. The particle removal includes: pressing the template on an adhesive member which is distinct from the first substrate. The adhesive member includes a dummy substrate, a particle removing film formed on the dummy substrate and configured to remove the particles, and a second light curable resin coated on the particle removing film. The second light curable resin is thicker than the first light curable resin.
摘要翻译：压印方法包括在第一衬底上接触模板。模板包括要在第一基板上转印的图案。第一基板包括第一半导体基板和涂覆在第一半导体基板上的第一光固化树脂。该方法还包括从第一基底分离模板，以及除去附着在模板上的颗粒。颗粒去除包括：将模板压在与第一基板不同的粘合剂构件上。所述粘合部件包括虚拟基板，形成在所述虚设基板上并构成为除去所述粒子的除粒膜，以及涂覆在所述除粒膜上的第二光固化树脂。第二光固化树脂比第一光固化树脂厚。

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