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51. 发明申请

US20100044867A1 METHODS OF POST-CONTACT BACK END OF LINE THROUGH-HOLE VIA INTEGRATION 有权
标题翻译：通过一体化的线接触后端的方法
公开(公告)号：US20100044867A1
公开(公告)日：2010-02-25
申请号：US12613518
申请日：2009-11-05
申请人： John Boyd , Fritz Redeker , Yezdi Dordi , Hyungsuk Alexander Yoon , Shijian Li
发明人： John Boyd , Fritz Redeker , Yezdi Dordi , Hyungsuk Alexander Yoon , Shijian Li
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L23/48 , H01L21/4763 , H01L21/76898 , H01L2924/14
摘要： Presented are methods of fabricating three-dimensional integrated circuits that include post-contact back end of line through-hole via integration for the three-dimensional integrated circuits. Another aspect of the present invention includes three-dimensional integrated circuits fabricated according to methods of the present invention.
摘要翻译：提出了制造三维集成电路的方法，其包括用于三维集成电路的集成的线路通孔的后接触后端。本发明的另一方面包括根据本发明的方法制造的三维集成电路。

52. 发明申请

US20090241996A1 SINGLE WAFER DRYER AND DRYING METHODS 审中-公开
标题翻译：单辊干燥机和干燥方法
公开(公告)号：US20090241996A1
公开(公告)日：2009-10-01
申请号：US12345642
申请日：2008-12-29
申请人： Younes Achkire , Alexander N. Lerner , Boris I. Govzman , Boris Fishkin , Michael N. Sugarman , Rashid A. Mavliev , Haoquan Fang , Shijian Li , Guy E. Shirazi , Jianshe Tang
发明人： Younes Achkire , Alexander N. Lerner , Boris I. Govzman , Boris Fishkin , Michael N. Sugarman , Rashid A. Mavliev , Haoquan Fang , Shijian Li , Guy E. Shirazi , Jianshe Tang
IPC分类号： B08B3/00
CPC分类号： H01L21/67034 , B08B3/10 , H01L21/67751 , H01L21/681 , H01L21/68764 , Y10S414/139
摘要： In a first aspect, a module is provided that is adapted to process a wafer. The module includes a processing portion having one or more features such as (1) a rotatable wafer support for rotating an input wafer from a first orientation wherein the wafer is in line with a load port to a second orientation wherein the wafer is in line with an unload port; (2) a catcher adapted to contact and travel passively with a wafer as it is unloaded from the processing portion; (3) an enclosed output portion adapted to create a laminar air flow from one side thereof to the other; (4) an output portion having a plurality of wafer receivers; (5) submerged fluid nozzles; and/or (6) drying gas flow deflectors, etc. Other aspects include methods of wafer processing.
摘要翻译：在第一方面，提供一种适于处理晶片的模块。模块包括具有一个或多个特征的处理部分，例如（1）可旋转晶片支撑件，用于从第一取向旋转输入晶片，其中晶片与负载端口对准至第二取向，其中晶片与卸货港（2）捕捉器，其适于在从所述处理部分卸载时与晶片被动接触和行进; （3）适于产生从其一侧到另一侧的层流空气流的封闭输出部分; （4）具有多个晶片接收器的输出部分; （5）浸没式流体喷嘴; 和/或（6）干燥气体导流板等。其它方面包括晶片处理的方法。

53. 发明授权

US07513062B2 Single wafer dryer and drying methods 有权
标题翻译：单片干燥机和干燥方法
公开(公告)号：US07513062B2
公开(公告)日：2009-04-07
申请号：US11054336
申请日：2005-02-09
申请人： Younes Achkire , Alexander N Lerner , Boris Govzman , Boris Fishkin , Michael N Sugarman , Rashid A Mavliev , Haoquan Fang , Shijian Li , Guy E Shirazi , Jianshe Tang
发明人： Younes Achkire , Alexander N Lerner , Boris Govzman , Boris Fishkin , Michael N Sugarman , Rashid A Mavliev , Haoquan Fang , Shijian Li , Guy E Shirazi , Jianshe Tang
IPC分类号： F26B3/00 , B08B3/00
CPC分类号： H01L21/02052 , H01L21/67034
摘要： In a first aspect, a first method of drying a substrate is provided. The first method includes the steps of (1) lifting a substrate through an air/fluid interface at a first rate; (2) directing a drying vapor at the air/fluid interface during lifting of the substrate; and (3) while a portion of the substrate remains in the air/fluid interface, reducing a rate at which a remainder of the substrate is lifted through the air/fluid interface to a second rate. The drying vapor may form an angle of about 23° with the air/fluid interface and/or the second rate may be about 2.5 mm/sec.
摘要翻译：在第一方面中，提供了干燥基板的第一种方法。第一种方法包括以下步骤：（1）以第一速率提升衬底通过空气/流体界面; （2）在提升衬底期间在空气/流体界面处引导干燥蒸汽; 和（3）当衬底的一部分保留在空气/流体界面中时，降低衬底的剩余部分通过空气/流体界面提升到第二速率的速率。干燥蒸气可以与空气/流体界面形成约23°的角度和/或第二速率可以为约2.5mm / sec。

54. 发明授权

US07201636B2 Chemical mechanical polishing a substrate having a filler layer and a stop layer 有权
标题翻译：化学机械抛光具有填料层和停止层的基材
公开(公告)号：US07201636B2
公开(公告)日：2007-04-10
申请号：US11075778
申请日：2005-03-08
申请人： Raymond R. Jin , Shijian Li , Fred C. Redeker , Thomas H. Osterheld
发明人： Raymond R. Jin , Shijian Li , Fred C. Redeker , Thomas H. Osterheld
IPC分类号： B24B49/00 , B24B1/00
CPC分类号： H01L21/76819 , B24B37/04 , B24B37/042 , H01L21/31053 , H01L21/3212 , H01L21/7684
摘要： A substrate is chemical mechanical polished with a high-selectivity slurry until the stop layer is at least partially exposed, and then the substrate is polished with a low-selectivity slurry until the stop layer is completely exposed.
摘要翻译：将基材用高选择性浆料进行化学机械抛光，直至止挡层至少部分暴露，然后用低选择性浆料抛光基材直到停止层完全暴露。

55. 发明申请

US20070066200A9 Perforation and grooving for polishing articles 审中-公开
标题翻译：用于抛光物品的穿孔和开槽
公开(公告)号：US20070066200A9
公开(公告)日：2007-03-22
申请号：US11418557
申请日：2006-05-05
申请人： Shijian Li , Liang-Yuh Chen , Alain Duboust
发明人： Shijian Li , Liang-Yuh Chen , Alain Duboust
IPC分类号： H01L21/306 , B24D11/00
CPC分类号： B24B37/24 , B23H5/08 , B24B57/02
摘要： Methods, articles of manufacture, and apparatus are provided for depositing and planarizing one or more layers of material on a substrate, or combinations thereof, are disclosed. In one embodiment, an article of manufacture is provided for polishing a substrate, comprising a polishing article having a polishing surface, a plurality of perforations formed in at least a portion of the polishing article for flow of material therethrough, and a plurality of grooves disposed in the polishing surface. The article of manufacture may be used in a method for processing a substrate, comprising positioning the substrate in an electrolyte solution containing a polishing article, optionally depositing a material on the substrate by an electrochemical deposition method, and polishing the substrate with the polishing article.
摘要翻译：提供了方法，制品和装置，用于沉积和平坦化衬底上的一层或多层材料，或其组合。在一个实施例中，提供了用于抛光衬底的制品，其包括具有抛光表面的抛光制品，在抛光制品的至少一部分中形成的用于材料流动的多个穿孔，以及多个槽，在抛光面上。制造物品可以用于处理基材的方法，包括将基底定位在含有抛光制品的电解质溶液中，任选地通过电化学沉积方法将材料沉积在基底上，并用抛光制品抛光基底。

56. 发明申请

US20060144825A1 Dual reduced agents for barrier removal in chemical mechanical polishing 审中-公开
公开(公告)号：US20060144825A1
公开(公告)日：2006-07-06
申请号：US11368839
申请日：2006-03-06
申请人： Stand Tsai , Shijian Li , Feng Liu , Lizhong Sun , Liang-Yuh Chen
发明人： Stand Tsai , Shijian Li , Feng Liu , Lizhong Sun , Liang-Yuh Chen
IPC分类号： C09K13/00 , C03C15/00 , H01L21/302 , B44C1/22 , C23F1/00
CPC分类号： B24B37/0056 , B24B37/044 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： Compositions and methods for removal of barrier layer materials by a chemical mechanical polishing technique are provided. In one aspect, the invention provides a composition adapted for removing a barrier layer material in a chemical mechanical polishing technique including at least one reducing agent selected from the group of bicarboxylic acids, tricarboxylic acids, and combinations thereof, at least one reducing agent selected from the group of glucose, hydroxylamine, and combinations thereof, and deionized water, wherein the composition has a pH of about 7 or less. The composition may be used in a method for removing the barrier layer material including applying the composition to a polishing pad and polishing the substrate in the presence of the composition to remove the barrier layer.

57. 发明授权

US06887129B2 Chemical mechanical polishing with friction-based control 有权
标题翻译：化学机械抛光以摩擦为主的控制
公开(公告)号：US06887129B2
公开(公告)日：2005-05-03
申请号：US10666891
申请日：2003-09-17
申请人： Manoocher Birang , Shijian Li
发明人： Manoocher Birang , Shijian Li
IPC分类号： B24B37/005 , B24B49/00 , B24B49/16 , H01L21/304
CPC分类号： B24B37/005 , B24B49/006 , B24B49/16
摘要： A chemical mechanical polishing apparatus has a polishing surface, a carrier head to press a substrate against the polishing surface with a controllable pressure, a motor to generate relative motion between the polishing surface and the carrier head at a velocity, and a controller. The controller is configured to vary at least one of the pressure and velocity in response to a signal that depends on the friction between the substrate and the polishing surface to maintain a constant torque, frictional force, or coefficient of friction.
摘要翻译：化学机械抛光装置具有抛光面，以可控制的压力将衬底压靠抛光表面的载体头，以一定速度在抛光表面和载体头之间产生相对运动的电动机和控制器。控制器被配置为响应于取决于基板和抛光表面之间的摩擦的信号来改变压力和速度中的至少一个，以保持恒定的扭矩，摩擦力或摩擦系数。

58. 发明授权

US06863593B1 Chemical mechanical polishing a substrate having a filler layer and a stop layer 有权
标题翻译：化学机械抛光具有填料层和停止层的基材
公开(公告)号：US06863593B1
公开(公告)日：2005-03-08
申请号：US09184805
申请日：1998-11-02
申请人： Raymond R. Jin , Shijian Li , Fred C. Redeker , Thomas H. Osterheld
发明人： Raymond R. Jin , Shijian Li , Fred C. Redeker , Thomas H. Osterheld
IPC分类号： B24B37/04 , H01L21/3105 , H01L21/321 , H01L21/768 , B24C1/08
CPC分类号： H01L21/76819 , B24B37/04 , B24B37/042 , H01L21/31053 , H01L21/3212 , H01L21/7684
摘要： A substrate is chemical mechanical polished with a high-selectivity slurry until the stop layer is at least partially exposed, and then the substrate is polished with a low-selectivity slurry until the stop layer is completely exposed.
摘要翻译：将基材用高选择性浆料进行化学机械抛光，直至止挡层至少部分暴露，然后用低选择性浆料抛光基材直到停止层完全暴露。

59. 发明授权

US06858265B2 Technique for improving chucking reproducibility 失效
标题翻译：提高夹心再现性的技术
公开(公告)号：US06858265B2
公开(公告)日：2005-02-22
申请号：US10370028
申请日：2003-02-18
申请人： Fred C. Redeker , Robert Steger , Shijian Li
发明人： Fred C. Redeker , Robert Steger , Shijian Li
IPC分类号： B23Q3/15 , C23C16/44 , C23C16/458 , H01L21/3065 , H01L21/683 , H02N13/00 , B05D3/02 , B05D3/04 , C23C16/00
CPC分类号： C23C16/4404 , C23C16/4586 , H01L21/6831
摘要： Method and apparatus for improving the reproducibility of chucking forces of an electrostatic chuck used in plasma enhanced CVD processing of substrates provides for precoating of the electrostatic chuck with a dielectric layer, such as SiO2, after every chamber cleaning process. The uniform and tightly bonded dielectric layer deposited on the electrostatic chuck eliminates the need for a cover wafer over the chuck surface during the chamber cleaning and provides for more reliable gripping of wafers.
摘要翻译：用于提高基板等离子体增强CVD处理中的静电卡盘的夹持力的再现性的方法和装置提供了在每个室清洁处理之后静电卡盘与诸如SiO 2之类的介电层的预涂层。沉积在静电卡盘上的均匀且紧密结合的电介质层消除了在腔室清洁期间在卡盘表面上的覆盖晶片的需要，并且提供更可靠的夹持晶片。

60. 发明授权

US06796880B2 Linear polishing sheet with window 有权
标题翻译：线性抛光板带窗
公开(公告)号：US06796880B2
公开(公告)日：2004-09-28
申请号：US10394599
申请日：2003-03-21
申请人： Fred C. Redeker , Manoocher Birang , Shijian Li , Sasson Somekh
发明人： Fred C. Redeker , Manoocher Birang , Shijian Li , Sasson Somekh
IPC分类号： B24B100
CPC分类号： B24B37/005 , B24B21/04 , B24B49/04 , B24B49/12 , H01L21/30625
摘要： A polishing article for chemical mechanical polishing. The polishing article includes a generally elongated polishing sheet with a polishing surface. The polishing article is formed from a material that is substantially opaque, and has a discrete region extending substantially the length of the polishing sheet that is at least semi-transparent.
摘要翻译：用于化学机械抛光的抛光制品。抛光制品包括具有抛光表面的大致细长的抛光片。抛光制品由基本上不透明的材料形成，并且具有基本上延伸至少半透明的抛光片的长度的离散区域。

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