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51. 发明授权

US08110870B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08110870B2
公开(公告)日：2012-02-07
申请号：US12502251
申请日：2009-07-14
申请人： Masahiro Sugimoto , Tsutomu Uesugi , Masakazu Kanechika , Tetsu Kachi
发明人： Masahiro Sugimoto , Tsutomu Uesugi , Masakazu Kanechika , Tetsu Kachi
IPC分类号： H01L29/66
CPC分类号： H01L29/8122 , H01L29/0623 , H01L29/0657 , H01L29/1029 , H01L29/1037 , H01L29/1075 , H01L29/1079 , H01L29/42316 , H01L29/7828 , H01L29/7832 , H01L29/7838 , H01L29/812
摘要： A semiconductor device has a semiconductor substrate having a surface layer and a p-type semiconductor region, wherein the surface layer includes a contact region, a channel region and a drift region, the channel region is adjacent to and in contact with the contact region, the drift region is adjacent to and in contact with the channel region and includes n-type impurities at least in part, and the p-type semiconductor region is in contact with the drift region and at least a portion of a rear surface of the channel region, a main electrode disposed on the surface layer and electrically connected to the contact region, a gate electrode disposed on the surface layer and extending from above a portion of the contact region to above at least a portion of the drift region via above the channel region, and an insulating layer covering at least the portion of the contact region and not covering at least the portion of the drift region. The gate electrode and the contact region are insulated by the insulating layer, and the gate electrode and the drift region are in direct contact to form a Schottky junction.
摘要翻译：半导体器件具有具有表面层和p型半导体区域的半导体衬底，其中表面层包括接触区域，沟道区域和漂移区域，沟道区域与接触区域相邻并与其接触，漂移区域与沟道区域相邻并且与沟道区域接触并且至少部分地包括n型杂质，并且p型半导体区域与漂移区域和沟道的后表面的至少一部分接触区域，设置在所述表面层上并电连接到所述接触区域的主电极，设置在所述表面层上并且从所述接触区域的一部分的上方延伸到所述漂移区域的至少一部分之上的栅电极，以及至少覆盖所述接触区域的部分并且至少覆盖所述漂移区域的部分的绝缘层。栅极电极和接触区域被绝缘层绝缘，栅电极和漂移区域直接接触形成肖特基结。

52. 发明申请

US20110287626A1 OHMIC ELECTRODE AND METHOD OF FORMING THE SAME 审中-公开
标题翻译： OHMIC电极及其形成方法
公开(公告)号：US20110287626A1
公开(公告)日：2011-11-24
申请号：US13146208
申请日：2010-01-29
申请人： Akinori Seki , Masahiro Sugimoto , Akira Kawahashi , Yasuo Takahashi , Masakatsu Maeda
发明人： Akinori Seki , Masahiro Sugimoto , Akira Kawahashi , Yasuo Takahashi , Masakatsu Maeda
IPC分类号： H01L21/283
CPC分类号： H01L29/45 , H01L21/0485 , H01L29/1608
摘要： The invention provides an ohmic electrode of a p-type SiC semiconductor element, which includes an ohmic electrode layer that is made of Ti3SiC2, and that is formed directly on a surface of a p-type SiC semiconductor. The invention also provides a method of forming an ohmic electrode of a p-type SiC semiconductor element. The ohmic electrode includes an ohmic electrode layer that is made of Ti3SiC2, and that is formed directly on a surface of a p-type SiC semiconductor. The method includes forming a ternary mixed film that includes Ti, Si, and C in a manner such that an atomic composition ratio, Ti:Si:C is 3:1:2, on a surface of a p-type SiC semiconductor to produce a laminated film; and annealing the produced laminated film under vacuum or under an inert gas atmosphere.
摘要翻译：本发明提供了一种p型SiC半导体元件的欧姆电极，其包括由Ti 3 SiC 2制成的欧姆电极层，其直接形成在p型SiC半导体的表面上。本发明还提供了形成p型SiC半导体元件的欧姆电极的方法。欧姆电极包括由Ti 3 SiC 2制成并且直接形成在p型SiC半导体的表面上的欧姆电极层。该方法包括以使得在p型SiC半导体的表面上的原子组成比Ti:Si:C为3:1:2的方式形成包括Ti，Si和C的三元混合膜，以产生层压膜; 并在真空或惰性气体气氛下退火生产的层压膜。

53. 发明申请

US20110256561A1 LIVER DISEASE MARKER, METHOD AND APPARATUS FOR MEASURING THE SAME, AND METHOD FOR ASSAYING PHARMACEUTICAL PREPARATION 审中-公开
标题翻译：肝病标记，测定其的方法和装置以及药物制剂的测定方法
公开(公告)号：US20110256561A1
公开(公告)日：2011-10-20
申请号：US13140713
申请日：2009-11-26
申请人： Tomoyoshi Soga , Masahiro Sugimoto , Makoto Suematsu , Masashi Honma , Takehito Yamamoto , Hiroshi Suzuki
发明人： Tomoyoshi Soga , Masahiro Sugimoto , Makoto Suematsu , Masashi Honma , Takehito Yamamoto , Hiroshi Suzuki
IPC分类号： G01N33/68 , C07D233/64 , C12M1/40 , C07D209/20 , G01N33/53 , C12Q1/02 , C07C229/26 , C07C229/36
CPC分类号： G01N33/487 , C07K5/0215 , G01N33/497 , G01N33/576 , G01N33/6812 , G01N33/6893 , G01N2800/08 , G01N2800/60
摘要： A normal person (i.e. a control) and liver diseases such as drug induced liver injury, an asymptomatic hepatitis B carrier, an asymptomatic hepatitis C carrier, chronic hepatitis B, chronic hepatitis C, liver cancer, a nonalcoholic fatty liver disease (NAFLD), nonalcoholic steatohepatitis (NASH), and simple steatosis (SS) are identified by measuring the concentrations of γ-Glu-X (X represents an amino acid or an amine) peptides or the levels of AST or ALT in blood and carrying out, for example, a multiple logistic regression based on the measured value.
摘要翻译：正常人（即对照）和肝脏疾病如药物诱发的肝损伤，无症状乙型肝炎携带者，无症状丙型肝炎携带者，慢性乙型肝炎，慢性丙型肝炎，肝癌，非酒精性脂肪性肝病（NAFLD）通过测量血液中γ-Glu-X（X代表氨基酸或胺）肽的浓度或AST或ALT的水平，进行例如，通过测定非酒精性脂肪性肝炎（NASH）和简单脂肪变性（SS），基于测量值的多重逻辑回归。

54. 发明授权

US08008749B2 Semiconductor device having vertical electrodes structure 有权
标题翻译：具有垂直电极结构的半导体器件
公开(公告)号：US08008749B2
公开(公告)日：2011-08-30
申请号：US11667735
申请日：2005-11-14
申请人： Masahiro Sugimoto , Tsutomu Uesugi , Hiroyuki Ueda , Narumasa Soejima , Tetsu Kachi
发明人： Masahiro Sugimoto , Tsutomu Uesugi , Hiroyuki Ueda , Narumasa Soejima , Tetsu Kachi
IPC分类号： H01L29/20
CPC分类号： H01L29/7802 , H01L29/0649 , H01L29/0653 , H01L29/0692 , H01L29/0696 , H01L29/0843 , H01L29/0847 , H01L29/0891 , H01L29/2003 , H01L29/41 , H01L29/778 , H01L29/7788 , H01L29/8122
摘要： A semiconductor device is provided with a drain electrode 22, a semiconductor base plate 32, an electric current regulation layer 42 covering a part of a surface of the semiconductor base plate 32 and leaving a non-covered surface 55 at the surface of the semiconductor base plate 32, a semiconductor layer 50 covering a surface of the electric current regulation layer 42, and a source electrode 62 formed at a surface of the semiconductor layer 50. A drift region 56, a channel forming region 54, and a source region 52 are formed within the semiconductor layer 50. The drain electrode 22 is connected to a first terminal of a power source, and the source electrode 62 is connected to a second terminal of the power source. With this semiconductor layer 50, it is possible to increase withstand voltage or reduce the occurrence of current leakage.
摘要翻译：半导体器件设置有漏电极22，半导体基板32，覆盖半导体基板32的一部分表面的电流调节层42，并在半导体基板的表面留下未被覆盖的表面55 板32，覆盖电流调节层42的表面的半导体层50和形成在半导体层50的表面的源电极62.漂移区56，沟道形成区54和源极区52是形成在半导体层50内。漏电极22连接到电源的第一端子，源电极62连接到电源的第二端子。利用该半导体层50，可以提高耐压或减少电流泄漏的发生。

55. 发明授权

US07800130B2 Semiconductor devices 有权
标题翻译：半导体器件
公开(公告)号：US07800130B2
公开(公告)日：2010-09-21
申请号：US11795117
申请日：2006-01-20
申请人： Masahiro Sugimoto , Tetsu Kachi , Tsutomu Uesugi , Hiroyuki Ueda , Narumasa Soejima
发明人： Masahiro Sugimoto , Tetsu Kachi , Tsutomu Uesugi , Hiroyuki Ueda , Narumasa Soejima
IPC分类号： H01L29/778
CPC分类号： H01L29/452 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/7787
摘要： A semiconductor device 10 comprises a heterojunction between a lower semiconductor layer 26 made of p-type gallium nitride and an upper semiconductor layer 28 made of n-type AlGaN, wherein the upper semiconductor layer 28 has a larger band gap than the lower semiconductor layer 26. The semiconductor device 10 further comprises a drain electrode 32 formed on a portion of a top surface of the upper semiconductor layer 28, a source electrode 34 formed on a different portion of the top surface of the upper semiconductor layer 28, and a gate electrode 36 electrically connected to the lower semiconductor layer 26. The semiconductor device 10 can operate as normally-off.
摘要翻译：半导体器件10包括由p型氮化镓制成的下半导体层26和由n型AlGaN制成的上半导体层28之间的异质结，其中上半导体层28具有比下半导体层26更大的带隙半导体器件10还包括形成在上半导体层28的顶表面的一部分上的漏极32，形成在上半导体层28的顶表面的不同部分上的源极34和栅电极 36电连接到下半导体层26.半导体器件10可以正常工作。

56. 发明申请

US20100117119A1 SEMICONDUCTOR DEVICE HAVING HETERO JUNCTION 有权
标题翻译：具有异常结的半导体器件
公开(公告)号：US20100117119A1
公开(公告)日：2010-05-13
申请号：US12595253
申请日：2008-04-07
申请人： Tsutomu Uesugi , Kenji Ito , Osamu Ishiguro , Tetsu Kachi , Masahiro Sugimoto
发明人： Tsutomu Uesugi , Kenji Ito , Osamu Ishiguro , Tetsu Kachi , Masahiro Sugimoto
IPC分类号： H01L29/778
CPC分类号： H01L29/2003 , H01L29/045 , H01L29/205 , H01L29/66462 , H01L29/7786 , H01L29/7788 , H01L29/7789 , H01L29/7828
摘要： A semiconductor device 10 is provided with a first hetero junction 40b configured with two types of nitride semiconductors having different bandgap energy from each other, a second hetero junction 50b configured with two types of nitride semiconductors having different bandgap energy from each other, and a gate electrode 58 facing the second hetero junction 50b. The second hetero junction 50b is configured to be electrically connected to the first hetero junction 40b. The first hetero junction 40b is a c-plane and the second hetero junction 50b is either an a-plane or an m-plane.
摘要翻译：半导体器件10设置有由彼此具有不同带隙能量的两种类型的氮化物半导体构成的第一异质结40b，由具有彼此具有不同带隙能量的两种类型的氮化物半导体构成的第二异质结50b，以及栅极电极58面对第二异质结50b。第二异质结50b被配置为电连接到第一异质结40b。第一异质结40b是c面，第二异质结50b是a面或m面。

57. 发明申请

US20090233435A1 SEMICONDUCTOR DEVICES AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090233435A1
公开(公告)日：2009-09-17
申请号：US12440939
申请日：2007-09-21
申请人： Akira Kawahashi , Masahiro Sugimoto , Akinori Seki , Masakatsu Maeda , Yasuo Takahashi
发明人： Akira Kawahashi , Masahiro Sugimoto , Akinori Seki , Masakatsu Maeda , Yasuo Takahashi
IPC分类号： H01L21/285
CPC分类号： H01L29/7802 , H01L21/046 , H01L29/1608 , H01L29/45 , H01L29/78 , Y10S438/931
摘要： A method is set forth of forming an ohmic electrode having good characteristics on a SiC semiconductor layer. In the method, a Ti-layer and an Al-layer are formed on a surface of the SiC substrate. The SiC substrate having the Ti-layer and the Al-layer is maintained at a temperature that is higher than or equal to a first temperature and lower than a second temperature until all Ti in the Ti-layer has reacted with Al. The first temperature is the minimum temperature of a temperature zone at which the Ti reacts with the Al to form Al3Ti, and the second temperature is the minimum temperature of a temperature zone at which the Al3Ti reacts with SiC to form Ti3SiC2. As a result of this maintaining of temperature step, an Al3Ti-layer is formed on the surface of the SiC substrate. The method also comprises further heating the SiC substrate having the Al3Ti-layer to a temperature that is higher than the second temperature. As a result of this step of further heating the SiC substrate reacts with Al3Ti of the Al3Ti-layer to form a Ti3SiC2-layer on the surface of the SiC substrate.
摘要翻译：阐述了在SiC半导体层上形成具有良好特性的欧姆电极的方法。在该方法中，在SiC衬底的表面上形成Ti层和Al层。具有Ti层和Al层的SiC衬底保持在高于或等于第一温度并低于第二温度的温度，直到Ti层中的所有Ti都与Al反应。第一个温度是Ti与Al反应形成Al3Ti的温度区的最低温度，第二个温度是Al3Ti与SiC反应形成Ti3SiC2的温度区的最低温度。由于这种维持温度步骤的结果，在SiC衬底的表面上形成Al 3 Ti层。该方法还包括将具有Al 3 Ti层的SiC衬底进一步加热到高于第二温度的温度。作为进一步加热的步骤的结果，SiC衬底与Al 3 Ti层的Al 3 Ti反应以在SiC衬底的表面上形成Ti 3 SiC 2层。

58. 发明申请

US20090190155A1 Printing system 审中-公开
标题翻译：印刷系统
公开(公告)号：US20090190155A1
公开(公告)日：2009-07-30
申请号：US12321641
申请日：2009-01-23
申请人： Masahiro Sugimoto
发明人： Masahiro Sugimoto
IPC分类号： G06K15/00 , G06F3/12
CPC分类号： G06F3/1285 , G06F3/121 , G06F3/1229 , G06F3/1234 , G06F3/1259
摘要： A personal computer identifies a target of a printing error in a printer. At this time, the personal computer identifies the target of the printing error in the printer as a print file, based on an identification code obtained together with status information which represents error information. The personal computer waits for the printer to restore the error. The personal computer determines whether or not the printer has restored the error based on the status information obtained from the printer on a regular basis or when driven by some event. Next, the personal computer retransmits the print file thus identified to the printer. Alternatively, the printer re-receives the print file.
摘要翻译：个人计算机识别打印机中打印错误的目标。此时，个人计算机基于与表示错误信息的状态信息一起获得的识别码，将打印机中的打印错误的目标识别为打印文件。个人电脑等待打印机恢复错误。个人计算机基于从打印机定期获得的状态信息或当某些事件驱动时，确定打印机是否已经恢复了错误。接下来，个人计算机将如此识别的打印文件重新发送到打印机。或者，打印机重新接收打印文件。

59. 发明申请

US20080073652A1 III-V Hemt Devices 有权
标题翻译： III-V Hemt设备
公开(公告)号：US20080073652A1
公开(公告)日：2008-03-27
申请号：US11632665
申请日：2005-06-22
申请人： Masahiro Sugimoto , Tetsu Kachi , Yoshitaka Nakano , Tsutomu Uesugi , Hiroyuki Ueda , Narumasa Soejima
发明人： Masahiro Sugimoto , Tetsu Kachi , Yoshitaka Nakano , Tsutomu Uesugi , Hiroyuki Ueda , Narumasa Soejima
IPC分类号： H01L29/205 , H01L21/338 , H01L29/778
CPC分类号： H01L29/778 , H01L21/28 , H01L29/2003 , H01L29/66431 , H01L29/66462 , H01L29/7787
摘要： The semiconductor device has a stacked structure in which a p-GaN layer 32, an SI-GaN layer 62, and an AlGaN layer 34 are stacked, and has a gate electrode 44 that is formed at a top surface side of the AlGaN layer 34. A band gap of the AlGaN layer 34 is wider than a band gap of the p-GaN layer 32 and the SI-GaN layer 62. Moreover, impurity concentration of the SI-GaN layer 62 is less than 1×1017 cm−3. The semiconductor devices comprising III-V semiconductors that have a stable normally-off operation are realized.
摘要翻译：半导体器件具有层叠p-GaN层32，SI-GaN层62和AlGaN层34的堆叠结构，并且具有形成在AlGaN层34的顶面侧的栅电极44 AlGaN层34的带隙比p-GaN层32和SI-GaN层62的带隙宽。另外，SI-GaN层62的杂质浓度小于1×10 17 / SUP> cm 3 -3。实现了具有稳定的常关断操作的包括III-V半导体的半导体器件。

60. 发明授权

US06568267B2 Sensing device and sensor apparatus 失效
标题翻译：感应装置和传感器装置
公开(公告)号：US06568267B2
公开(公告)日：2003-05-27
申请号：US09838287
申请日：2001-04-20
申请人： Kazumi Chida , Masato Hashimoto , Masaru Nagao , Hidemi Senda , Norihisa Okayama , Keiko Neki , Masahiro Sugimoto
发明人： Kazumi Chida , Masato Hashimoto , Masaru Nagao , Hidemi Senda , Norihisa Okayama , Keiko Neki , Masahiro Sugimoto
IPC分类号： G01C1900
CPC分类号： G01C19/5719 , G01P2015/0814
摘要： A sensing device, such as an angular speed detecting device, includes a vibrator for improving detection precision. The vibrator is displaceably supported on a substrate and is vibrated in the direction of an X-axis by driving electrodes. Detecting electrodes detect vibrations of the vibrator in the direction of a Y-axis caused by a Coriolis' force resulting from the angular speed occurring about a Z-axis. Each of the driving and detecting electrodes includes a movable electrode that is connected to the vibrator and that is displaced together therewith on the substrate and a fixed electrode fixed onto the substrate in such a manner as to face the movable electrode. By equalizing conductors connected to fixed electrodes of the driving electrodes and conductors connected to fixed electrodes of the detecting electrodes in length, width, and thickness, respectively, one electrical characteristic is set for those of the wiring portions which function in the same manner.
摘要翻译：诸如角速度检测装置的感测装置包括用于提高检测精度的振动器。振动器被可移动地支撑在基板上，并且通过驱动电极在X轴的方向上振动。检测电极通过由围绕Z轴的角速度产生的科里奥利力产生的Y轴方向检测振动器的振动。每个驱动和检测电极都包括一个可动电极，它连接到振子上并与基板一起位移在一起，固定电极以面对可动电极的方式固定在基板上。通过使连接到驱动电极的固定电极的导体和连接到检测电极的固定电极的导体的长度，宽度和厚度分别相等，为相同方式起作用的布线部分设置一个电特性。

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