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51. 发明授权

US08197612B2 Optimization of metallurgical properties of a solder joint 有权
标题翻译：优化焊点的冶金特性
公开(公告)号：US08197612B2
公开(公告)日：2012-06-12
申请号：US12111524
申请日：2008-04-29
申请人： James A Busby , Minhua Lu , Valerie A Oberson , Eric D Perfecto , Kamalesh K Srivastava , Brian R Sundlof , Julien Sylvestre , Renee L Weisman
发明人： James A Busby , Minhua Lu , Valerie A Oberson , Eric D Perfecto , Kamalesh K Srivastava , Brian R Sundlof , Julien Sylvestre , Renee L Weisman
IPC分类号： B23K35/22
CPC分类号： B23K35/262 , B23K2101/36
摘要： Semiconductor packaging techniques are provided which optimize metallurgical properties of a joint using dissimilar solders. A solder composition for Controlled Collapse Chip Connection processing includes a combination of a tin based lead free solder component designed for a chip and a second solder component designed for a laminate. The total concentration of module Ag after reflow is less than 1.9% by weight. A method of manufacturing a solder component is also provided.
摘要翻译：提供半导体封装技术，其使用不同的焊料优化接头的冶金性能。用于受控塌陷芯片连接处理的焊料组合物包括为芯片设计的锡基无铅焊料组分和为层压板设计的第二焊料组分的组合。回流后模块Ag的总浓度小于1.9重量％。还提供了制造焊料组分的方法。

52. 发明授权

US07856711B2 Method of forming a substrate with interposer channels for cooling the substrate 有权
标题翻译：用于具有用于冷却衬底的中介层通道形成衬底的方法
公开(公告)号：US07856711B2
公开(公告)日：2010-12-28
申请号：US12212998
申请日：2008-09-18
申请人： Minhua Lu , Lawrence S. Mok
发明人： Minhua Lu , Lawrence S. Mok
IPC分类号： H01K3/10 , H01L23/02
CPC分类号： H01L23/427 , F28D15/0266 , H01L23/433 , H01L2224/16 , H01L2924/00011 , H01L2924/00014 , H01L2924/01019 , H01L2924/10253 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49165 , Y10T29/49204 , H01L2924/00 , H01L2224/0401
摘要： A method of forming structure. A substrate and an interposer are provided. The substrate includes a heat source and N continuous substrate channels on a first side of the substrate (N≧2). N interposer channels are coupled to the N substrate channels so as to form M continuous loops (1≦M≦N). Each loop independently consists of K substrate channels and K interposer channels in an alternating sequence. For each loop, K is at least 1 and is subject to an upper limit consistent with a constraint of the M loops collectively consisting of the N interposer channels and the N substrate channels. Each loop is independently open ended or closed. The first side of the substrate is connected to the interposer. The interposer is adapted to be thermally coupled to a heat sink such that the interposer is interposed between the substrate and the heat sink.
摘要翻译：一种形成结构的方法。提供了基板和插入件。衬底在衬底的第一侧上包括热源和N个连续衬底通道（N≥2）。 N个内插器通道耦合到N个衬底通道，以便形成M个连续环路（1＆amp; NlE; M＆amp; N; N）。每个回路以交替顺序独立地由K个衬底通道和K个插入器通道组成。对于每个循环，K至少为1，并且受到与由N个插入物通道和N个底物通道组成的M个回路的约束一致的上限。每个循环是独立开放的或封闭的。衬底的第一面连接到插入器。插入器适于热耦合到散热器，使得插入器插入在基板和散热器之间。

53. 发明申请

US20090266447A1 OPTIMIZATION OF METALLURGICAL PROPERTIES OF A SOLDER JOINT 有权
标题翻译：焊接接头的冶金特性优化
公开(公告)号：US20090266447A1
公开(公告)日：2009-10-29
申请号：US12111524
申请日：2008-04-29
申请人： JAMES A. BUSBY , MINHUA LU , VALERIE A. OBERSON , ERIC D. PERFECTO , KAMALESH K. SRIVASTAVA , BRIAN R. SUNDLOF , JULIEN SYLVESTRE , RENEE L. WEISMAN
发明人： JAMES A. BUSBY , MINHUA LU , VALERIE A. OBERSON , ERIC D. PERFECTO , KAMALESH K. SRIVASTAVA , BRIAN R. SUNDLOF , JULIEN SYLVESTRE , RENEE L. WEISMAN
IPC分类号： B23K35/22
CPC分类号： B23K35/262 , B23K2101/36
摘要： Semiconductor packaging techniques are provided which optimize metallurgical properties of a joint using dissimilar solders. A solder composition for Controlled Collapse Chip Connection processing includes a combination of a tin based lead free solder component designed for a chip and a second solder component designed for a laminate. The total concentration of module Ag after reflow is less than 1.9% by weight. A method of manufacturing a solder component is also provided.
摘要翻译：提供半导体封装技术，其使用不同的焊料优化接头的冶金性能。用于受控塌陷芯片连接处理的焊料组合物包括为芯片设计的锡基无铅焊料组分和为层压板设计的第二焊料组分的组合。回流后模块Ag的总浓度小于1.9重量％。还提供了制造焊料组分的方法。

54. 发明申请

US20090011546A1 COOLING OF SUBSTRATE USING INTERPOSER CHANNELS 有权
标题翻译：使用插入式通道冷却基板
公开(公告)号：US20090011546A1
公开(公告)日：2009-01-08
申请号：US12212998
申请日：2008-09-18
申请人： Minhua Lu , Lawrence S. Mok
发明人： Minhua Lu , Lawrence S. Mok
IPC分类号： H01L21/50
CPC分类号： H01L23/427 , F28D15/0266 , H01L23/433 , H01L2224/16 , H01L2924/00011 , H01L2924/00014 , H01L2924/01019 , H01L2924/10253 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49165 , Y10T29/49204 , H01L2924/00 , H01L2224/0401
摘要： A method of forming structure. A substrate and an interposer are provided. The substrate includes a heat source and N continuous substrate channels on a first side of the substrate (N≧2). N interposer channels are coupled to the N substrate channels so as to form M continuous loops (1≦M≦N). Each loop independently consists of K substrate channels and K interposer channels in an alternating sequence. For each loop, K is at least 1 and is subject to an upper limit consistent with a constraint of the M loops collectively consisting of the N interposer channels and the N substrate channels. Each loop is independently open ended or closed. The first side of the substrate is connected to the interposer. The interposer is adapted to be thermally coupled to a heat sink such that the interposer is interposed between the substrate and the heat sink.
摘要翻译：一种形成结构的方法。提供了基板和插入件。衬底在衬底的第一侧上包括热源和N个连续衬底通道（N> = 2）。 N介质通道耦合到N个衬底通道，以便形成M个连续环路（1≤M≤N）。每个回路以交替顺序独立地由K个衬底通道和K个插入器通道组成。对于每个循环，K至少为1，并且受到与由N个插入物通道和N个底物通道组成的M个回路的约束一致的上限。每个循环是独立开放的或封闭的。衬底的第一面连接到插入器。插入器适于热耦合到散热器，使得插入器插入在基板和散热器之间。

55. 发明申请

US20070224365A1 High pretilt homogeneous alignment and tilted vertical alignment by surface modification of thin films with nitrogen ion beam 审中-公开
标题翻译：通过用氮离子束对薄膜进行表面改性，进行高预倾斜均匀取向和倾斜垂直取向
公开(公告)号：US20070224365A1
公开(公告)日：2007-09-27
申请号：US11387323
申请日：2006-03-22
申请人： Alessandro C. Callegari , James P. Doyle , Alfred Grill , Hideo Kimura , Minhua Lu , Vishnubhai V. Patel , James Vichiconti , Takeshi Yamada
发明人： Alessandro C. Callegari , James P. Doyle , Alfred Grill , Hideo Kimura , Minhua Lu , Vishnubhai V. Patel , James Vichiconti , Takeshi Yamada
IPC分类号： C09K19/00 , C23C16/26 , C08J7/18
CPC分类号： C23C16/26 , C23C16/30 , C23C16/401 , C23C16/56 , G02F1/13378 , G02F2001/133746 , Y10T428/10
摘要： A method for providing an alignment surface for liquid crystal molecules in a liquid crystal display, comprising depositing on an optically transparent substrate an optically transparent film; and irradiating the film with nitrogen ions sufficiently to produce a pretilt angle of preferably greater than ten degrees. The film is preferably comprised of diamond like carbon. A liquid crystal display formed in accordance with the method.
摘要翻译：一种用于在液晶显示器中提供液晶分子的取向表面的方法，包括在光学透明基底上沉积光学透明的膜; 并充分地用氮离子照射薄膜以产生优选大于十度的预倾角。该膜优选由类金刚石碳组成。一种根据该方法形成的液晶显示器。

56. 发明授权

US07124636B2 Non-contact measurement of material property 有权
公开(公告)号：US07124636B2
公开(公告)日：2006-10-24
申请号：US10954022
申请日：2004-09-30
申请人： Yongping Zheng , Minhua Lu
发明人： Yongping Zheng , Minhua Lu
IPC分类号： G01N29/00
CPC分类号： G01N29/07 , G01N29/221 , G01N29/30 , G01N2203/0094 , G01N2291/02466 , G01N2291/02827 , G01N2291/044
摘要： A process for measuring a property of a sample is provided. The sample has an external surface enclosing an inner portion, and firstly, the sample is deformed by applying a predetermined non-contact pressure to deform a portion of the sample. Then a signal, which is at least suitable for transmission over the air, is directed towards the deformed portion of the sample, and further propagates through the external surface and the inner portion of the sample. Then an echoed signal generated by the inner portion of the sample in response to the propagation of the signal is detected; wherein the echoed signal incorporates information relating to a deformation of the inner portion of the sample. The property of the sample is determined from the deformation of the inner portion of the sample.

57. 发明申请

US20060042825A1 Cooling of substrate using interposer channels 有权
标题翻译：使用插入器通道冷却衬底
公开(公告)号：US20060042825A1
公开(公告)日：2006-03-02
申请号：US10933051
申请日：2004-09-02
申请人： Minhua Lu , Lawrence Mok
发明人： Minhua Lu , Lawrence Mok
IPC分类号： H05K1/00
CPC分类号： H01L23/427 , F28D15/0266 , H01L23/433 , H01L2224/16 , H01L2924/00011 , H01L2924/00014 , H01L2924/01019 , H01L2924/10253 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49165 , Y10T29/49204 , H01L2924/00 , H01L2224/0401
摘要： A structure, and method of forming and cooling the structure. The structure may include a substrate (e.g., a semiconductor chip) having N continuous substrate channels and an interposer having N continuous interposer channels (N≧2). The N interposer channels are coupled to the N substrate channels to form M continuous loops (1≦M≦N). The M loops may transfer heat from a heat source within the substrate to the interposer and then to a heat sink thermally coupled to the interposer. The structure may include an interposer having a thermally conductive enclosure surrounding a cavity. The cavity contains a thermally conductive foam material (e.g., graphite foam). The foam material contains a serpentine channel having contiguously connected channel segments. The serpentine channel may transfer heat from a heat source within a substrate (e.g., a semiconductor chip) to the interposer and then to a heat sink thermally coupled to the interposer.
摘要翻译：一种结构，以及形成和冷却结构的方法。该结构可以包括具有N个连续衬底通道的衬底（例如，半导体芯片）和具有N个连续插入器通道（N> = 2）的插入器。 N个插入器通道耦合到N个衬底沟道以形成M个连续环（1≤M≤N）。 M环可将热量从衬底内的热源传递到插入器，然后传递到热耦合到插入器的散热器。该结构可以包括具有围绕空腔的导热外壳的插入器。空腔包含导热泡沫材料（例如石墨泡沫）。泡沫材料包含具有连续连接的通道段的蛇形通道。蛇形通道可以将热量从衬底（例如，半导体芯片）内的热源传递到插入器，然后传递到热耦合到插入器的散热器。

58. 发明授权

US07002247B2 Thermal interposer for thermal management of semiconductor devices 失效
标题翻译：用于半导体器件热管理的热插入器
公开(公告)号：US07002247B2
公开(公告)日：2006-02-21
申请号：US10874297
申请日：2004-06-18
申请人： Lawrence S. Mok , Evan G. Colgan , Minhua Lu , Da-Yuan Shih
发明人： Lawrence S. Mok , Evan G. Colgan , Minhua Lu , Da-Yuan Shih
IPC分类号： H01I23/34
CPC分类号： H01L24/31 , H01L23/427 , H01L2224/16225 , H01L2224/73253 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/0132 , H01L2924/01322 , H01L2924/09701 , H01L2924/10158 , H01L2924/14 , H01L2924/15311 , H01L2924/01026 , H01L2924/01028
摘要： A thermal interposer is provided for attachment to the back surface of a semiconductor device so as to give a very low thermal resistance. In one preferred embodiment, the thermal interposer has two plates containing wick structures such as grooves. The thermal interposer is integrated with a semiconductor device so as to form a vapor chamber. In particular, the back surface of the semiconductor chip is in direct contact with the interior sealed volume of the vapor chamber, so as to greatly reduce the thermal resistance from the combination of the chip and the vapor chamber. Further, the upper plate is thermally coupled to a heat-sinking fixture such as a heat sink or a cold plate.
摘要翻译：提供了一种用于附接到半导体器件的背表面的热插入件，以便提供非常低的热阻。在一个优选实施例中，热插入件具有两个板，其中包含芯结构例如凹槽。热插入件与半导体器件集成以形成蒸气室。特别地，半导体芯片的背面与蒸发室的内部密封容积直接接触，从而大大降低了芯片与蒸气室的组合的热阻。此外，上板热耦合到诸如散热器或冷板之类的散热固定装置。

59. 发明申请

US20050280162A1 THERMAL INTERPOSER FOR THERMAL MANAGEMENT OF SEMICONDUCTOR DEVICES 失效
标题翻译：用于半导体器件热管理的热插拔器
公开(公告)号：US20050280162A1
公开(公告)日：2005-12-22
申请号：US10874297
申请日：2004-06-18
申请人： Lawrence Mok , Evan Colgan , Minhua Lu , Da-Yuan Shih
发明人： Lawrence Mok , Evan Colgan , Minhua Lu , Da-Yuan Shih
IPC分类号： H01L23/427 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/31 , H01L23/427 , H01L2224/16225 , H01L2224/73253 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/0132 , H01L2924/01322 , H01L2924/09701 , H01L2924/10158 , H01L2924/14 , H01L2924/15311 , H01L2924/01026 , H01L2924/01028
摘要： A thermal interposer is provided for attachment to the back surface of a semiconductor device so as to give a very low thermal resistance. In one preferred embodiment, the thermal interposer has two plates containing wick structures such as grooves. The thermal interposer is integrated with a semiconductor device so as to form a vapor chamber. In particular, the back surface of the semiconductor chip is in direct contact with the interior sealed volume of the vapor chamber, so as to greatly reduce the thermal resistance from the combination of the chip and the vapor chamber. Further, the upper plate is thermally coupled to a heat-sinking fixture such as a heat sink or a cold plate.
摘要翻译：提供了一种用于附接到半导体器件的背表面的热插入件，以便提供非常低的热阻。在一个优选实施例中，热插入件具有两个板，其中包含芯结构例如凹槽。热插入件与半导体器件集成以形成蒸气室。特别地，半导体芯片的背面与蒸发室的内部密封容积直接接触，从而大大降低了芯片与蒸气室的组合的热阻。此外，上板热耦合到诸如散热器或冷板之类的散热固定装置。

60. 发明申请

US20050280128A1 Thermal interposer for thermal management of semiconductor devices 失效
标题翻译：用于半导体器件热管理的热插入器
公开(公告)号：US20050280128A1
公开(公告)日：2005-12-22
申请号：US10872575
申请日：2004-06-18
申请人： Lawrence Mok , Evan Colgan , Minhua Lu , Da-Yuan Shih
发明人： Lawrence Mok , Evan Colgan , Minhua Lu , Da-Yuan Shih
IPC分类号： H01L23/02 , H01L23/427
CPC分类号： H01L23/427 , H01L2224/16 , H01L2224/16225 , H01L2224/73253 , H01L2924/01019 , H01L2924/01078 , H01L2924/01322 , H01L2924/09701 , H01L2924/10158 , H01L2924/15311
摘要： A thermal interposer is provided for attachment to a surface of a semiconductor device. In one embodiment, the thermal interposer includes an upper plate having a bottom surface with a plurality of grooves and made of a material having high thermal conductivity, and a lower plate having a top surface with a plurality of grooves and made of a material having a coefficient of thermal expansion that is substantially the same as the coefficient of thermal expansion of the material of a semiconductor device that is bonded to the bottom surface of the lower plate. The bottom surface of the upper plate is hermetically bonded to the top surface of the lower plate so that a vapor chamber is formed by the upper and lower plates, and walls of the grooves on the top surface of the lower plate extend to within less than 250 microns from walls of the grooves on the bottom surface of the upper plate comprise a plurality of second walls the first walls.
摘要翻译：提供了用于附接到半导体器件的表面的热插入件。在一个实施例中，热插入件包括具有多个凹槽并由具有高导热性的材料制成的底表面的上板，以及具有多个凹槽的顶表面的下板，并由具有热膨胀系数与结合到下板的底面的半导体器件的材料的热膨胀系数基本相同。上板的底面与下板的顶面密封，从而通过上板和下板形成蒸气室，下板顶表面上的槽的壁延伸到小于在上板的底表面上的槽的壁250微米包括多个第二壁和第一壁。

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