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51. 发明授权

US07058105B2 Semiconductor optoelectronic device 有权
标题翻译：半导体光电器件
公开(公告)号：US07058105B2
公开(公告)日：2006-06-06
申请号：US10624687
申请日：2003-07-23
申请人： Sung-nam Lee , Kyoung-ho Ha , Tan Sakong
发明人： Sung-nam Lee , Kyoung-ho Ha , Tan Sakong
IPC分类号： H01S5/00
CPC分类号： H01S5/20 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/32 , H01S5/2009 , H01S5/3211 , H01S5/34333
摘要： A highly efficient semiconductor optoelectronic device is provided. The semiconductor optoelectronic device includes an active layer, an upper waveguide layer provided on the active layer and a lower waveguide layer provided under the active layer, an upper cladding layer provided on the upper waveguide layer and a lower cladding layer provided under the lower waveguide layer, a substrate supporting a deposited structure of the lower cladding layer, the lower waveguide layer, the active layer, the upper waveguide layer, and the upper cladding layer, and upper and lower optical confinement layers provided between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer, respectively, and having an energy gap that is smaller than those of the upper and lower waveguide layers but greater than that of the active layer.
摘要翻译：提供了一种高效的半导体光电子器件。半导体光电子器件包括有源层，设置在有源层上的上波导层和设置在有源层下的下波导层，设置在上波导层上的上包层和设置在下波导层下的下包层，支撑下包层，下波导层，有源层，上波导层和上包层的沉积结构的基板，以及设置在有源层和上波导层之间的上和下光限制层并且分别在有源层和下波导层之间并且具有小于上波导层和下波导层的能隙的能隙，但是大于有源层的能隙。

52. 发明授权

US09325414B2 Data processing systems, systems on chip, and data processing systems comprising systems on chip 有权
标题翻译：数据处理系统，片上系统和包括片上系统的数据处理系统
公开(公告)号：US09325414B2
公开(公告)日：2016-04-26
申请号：US14883239
申请日：2015-10-14
申请人： Sung Dong Suh , In Sung Joe , Seong Gu Kim , Kyoung Won Na , Kyoung Ho Ha , Yong Hwack Shin
发明人： Sung Dong Suh , In Sung Joe , Seong Gu Kim , Kyoung Won Na , Kyoung Ho Ha , Yong Hwack Shin
IPC分类号： G02B6/14 , G02B6/12 , H04B10/25 , G02B6/293 , G02B6/10
CPC分类号： H04B10/25 , G02B6/107 , G02B6/12004 , G02B6/12007 , G02B6/14 , G02B6/29344 , G02B6/2938 , Y10T29/49
摘要： A data processing system may include: a first device; a second device; and an optical link connected between the first and second devices. The optical link may include a main optical waveguide configured to transmit an optical signal output from the second device; N sub-optical waveguides; N mode couplers, each configured to perform a mode coupling operation between the main optical waveguide and a respective one of the N sub-optical waveguides; and an optical wavelength filter connected to an output terminal of the main optical waveguide and an output terminal of each one of the N sub-optical waveguides. Each of the N sub-optical waveguides may include a first region formed at a first distance from the main optical waveguide; a second region formed at a second, greater distance from the main optical waveguide; and a third region for connecting the first and second regions.
摘要翻译：数据处理系统可以包括：第一设备; 第二设备; 以及连接在第一和第二设备之间的光学链路。光链路可以包括：主光波导，被配置为传输从第二设备输出的光信号; N个子光波导; N模耦合器，其被配置为在主光波导和N个子光波导中的相应一个之间执行模式耦合操作; 以及连接到主光波导的输出端子和N个子光波导中的每一个的输出端子的光波长滤波器。 N个子光波导中的每一个可以包括形成在距离主光波导的第一距离处的第一区域; 形成在距离主光波导的第二更大距离处的第二区域; 以及用于连接第一和第二区域的第三区域。

53. 发明申请

US20160094014A1 Hybrid Silicon Lasers on Bulk Silicon Substrates 审中-公开
标题翻译：大量硅衬底上的混合硅激光器
公开(公告)号：US20160094014A1
公开(公告)日：2016-03-31
申请号：US14833406
申请日：2015-08-24
申请人： Dong-jae SHIN , Dong-hyun KIM , Seong-gu KIM , In-sung JOE , Kyoung-ho HA
发明人： Dong-jae SHIN , Dong-hyun KIM , Seong-gu KIM , In-sung JOE , Kyoung-ho HA
IPC分类号： H01S5/20 , H01S5/22 , H01S5/343 , H01S5/02
CPC分类号： H01S5/2031 , G02B6/12 , G02B2006/12061 , G02B2006/12121 , H01S5/021 , H01S5/026 , H01S5/0422 , H01S5/1032 , H01S5/14 , H01S5/141 , H01S5/22 , H01S5/2232 , H01S5/227 , H01S5/34306
摘要： Hybrid silicon lasers are provided including a bulk silicon substrate, a localized insulating layer that extends on at least a portion of the bulk silicon substrate, an optical waveguide structure on an upper surface of the localized insulating layer. The optical waveguide structure includes an optical waveguide including a silicon layer. A lasing structure is provided on the optical waveguide structure.
摘要翻译：提供了混合硅激光器，其包括体硅衬底，在体硅衬底的至少一部分上延伸的局部绝缘层，在局部绝缘层的上表面上的光波导结构。光波导结构包括具有硅层的光波导。在光波导结构上设有激光结构。

54. 发明申请

US20160043802A1 DATA PROCESSING SYSTEMS, SYSTEMS ON CHIP, AND DATA PROCESSING SYSTEMS COMPRISING SYSTEMS ON CHIP 有权
标题翻译：数据处理系统，芯片系统以及包含芯片系统的数据处理系统
公开(公告)号：US20160043802A1
公开(公告)日：2016-02-11
申请号：US14883239
申请日：2015-10-14
申请人： Sung Dong Suh , In Sung Joe , Seong Gu Kim , Kyoung Won Na , Kyoung Ho Ha , Yong Hwack Shin
发明人： Sung Dong Suh , In Sung Joe , Seong Gu Kim , Kyoung Won Na , Kyoung Ho Ha , Yong Hwack Shin
IPC分类号： H04B10/25 , G02B6/12 , G02B6/14 , G02B6/293 , G02B6/10
CPC分类号： H04B10/25 , G02B6/107 , G02B6/12004 , G02B6/12007 , G02B6/14 , G02B6/29344 , G02B6/2938 , Y10T29/49
摘要： A data processing system may include: a first device; a second device; and an optical link connected between the first and second devices. The optical link may include a main optical waveguide configured to transmit an optical signal output from the second device; N sub-optical waveguides; N mode couplers, each configured to perform a mode coupling operation between the main optical waveguide and a respective one of the N sub-optical waveguides; and an optical wavelength filter connected to an output terminal of the main optical waveguide and an output terminal of each one of the N sub-optical waveguides. Each of the N sub-optical waveguides may include a first region formed at a first distance from the main optical waveguide; a second region formed at a second, greater distance from the main optical waveguide; and a third region for connecting the first and second regions.
摘要翻译：数据处理系统可以包括：第一设备; 第二设备; 以及连接在第一和第二设备之间的光学链路。光链路可以包括：主光波导，被配置为传输从第二设备输出的光信号; N个子光波导; N模耦合器，其被配置为在主光波导和N个子光波导中的相应一个之间执行模式耦合操作; 以及连接到主光波导的输出端子和N个子光波导中的每一个的输出端子的光波长滤波器。 N个子光波导中的每一个可以包括形成在距离主光波导的第一距离处的第一区域; 形成在距离主光波导的第二更大距离处的第二区域; 以及用于连接第一和第二区域的第三区域。

55. 发明授权

US08634678B2 Phase shifter and electro-optic modulation device including the same 有权
标题翻译：移相器和包括其的电光调制装置
公开(公告)号：US08634678B2
公开(公告)日：2014-01-21
申请号：US13239936
申请日：2011-09-22
申请人： Kwang-Hyun Lee , Dong-Jae Shin , Kyoung-Ho Ha
发明人： Kwang-Hyun Lee , Dong-Jae Shin , Kyoung-Ho Ha
IPC分类号： G02F1/035
CPC分类号： G02F1/025 , G02F1/2257 , G02F2201/066 , G02F2201/15
摘要： A phase shifter includes an optical waveguide, a plurality of impurity regions and a plurality of electrodes. The optical waveguide receives an optical input signal and outputs an optical output signal. The impurity regions include respective charge carriers. The impurity regions are disposed in contact with the optical waveguide at respective contact surface, where at least one of the contact surfaces has a zigzag pattern. The electrodes are connected to the respective impurity regions. Application of an electrical signal to at least one of the electrodes phase-shifts the optical output signal with respect to the optical input signal. Therefore, the phase shifter may efficiently vary a magnitude of the phase shift of the optical output signal.
摘要翻译：移相器包括光波导，多个杂质区和多个电极。光波导接收光输入信号并输出光输出信号。杂质区域包括各自的载流子。杂质区域设置成在相应的接触表面处与光波导接触，其中至少一个接触表面具有锯齿形图案。电极连接到各个杂质区域。将电信号施加到至少一个电极相对于光输入信号使光输出信号相移。因此，移相器可以有效地改变光输出信号的相移幅度。

56. 发明申请

US20120070111A1 SILICON BASED OPTICAL MODULATORS INCLUDING VERTICAL SLABS AND METHODS OF FORMING 有权
标题翻译：基于硅的光学调制器，包括垂直色板和形成方法
公开(公告)号：US20120070111A1
公开(公告)日：2012-03-22
申请号：US13232635
申请日：2011-09-14
申请人： Dong Jae SHIN , Jung Hyung Pyo , Kwang Hyun Lee , Kyoung Ho Ha , Ho-Chul Ji
发明人： Dong Jae SHIN , Jung Hyung Pyo , Kwang Hyun Lee , Kyoung Ho Ha , Ho-Chul Ji
IPC分类号： G02F1/025 , B29D11/00
CPC分类号： G02F1/01708 , G02F1/0054 , G02F1/01 , G02F1/011 , G02F1/015 , G02F1/01725 , G02F1/025 , G02F1/2257 , G02F2202/10
摘要： An optical modulator structure can include a core region that comprises an optical transmission path having a refractive index that is modulated via electric charge introduced into the core region. A plurality of first vertical slabs comes into contact with and is spaced along a first side of the core region to provide a first path for the electric charge to/from the core region. A plurality of second vertical slabs come into contact with and is spaced along a second side of the core region, that is opposite to the first side, to provide a second path for the electric charge to/from the core region. Other structures and methods are disclosed.
摘要翻译：光调制器结构可以包括核心区域，其包括具有通过引入到核心区域中的电荷调制的折射率的光传输路径。多个第一垂直板与芯区域的第一侧接触并间隔开，以提供用于/从芯区域的电荷的第一路径。多个第二垂直板与核心区域的与第一侧相对的第二侧接触并间隔开，以提供用于/从芯区域的电荷的第二路径。公开了其它结构和方法。

57. 发明授权

US08098994B2 Optical interconnection system for transmitting and receiving a three-level signal and method of operating the same 有权
标题翻译：用于发送和接收三电平信号的光互连系统及其操作方法
公开(公告)号：US08098994B2
公开(公告)日：2012-01-17
申请号：US12213151
申请日：2008-06-16
申请人： Han-youl Ryu , Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim
发明人： Han-youl Ryu , Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim
IPC分类号： H04B10/12
CPC分类号： H04B10/2504
摘要： Provided is an optical interconnection system that transmits and receives a three-level signal. The optical interconnection system includes a first and a second optical interconnection device that transmits and receives a two-level signal, and a synthesizer that outputs a three-level signal by synthesizing signals from the first and second optical interconnection devices. The optical interconnection system may transmit and receive a three-level signal while using an optical interconnection device that interconnects a two-level signal.
摘要翻译：提供了发送和接收三电平信号的光互连系统。光互连系统包括发送和接收两电平信号的第一和第二光学互连装置，以及通过合成来自第一和第二光学互连装置的信号输出三电平信号的合成器。光互连系统可以在使用互连两级信号的光互连装置的同时发送和接收三电平信号。

58. 发明申请

US20120002495A1 MEMORY SYSTEM, MEMORY TEST SYSTEM AND METHOD OF TESTING MEMORY SYSTEM AND MEMORY TEST SYSTEM 有权
标题翻译：存储器系统，存储器测试系统和测试存储器系统和存储器测试系统的方法
公开(公告)号：US20120002495A1
公开(公告)日：2012-01-05
申请号：US13235162
申请日：2011-09-16
申请人： Soo-Haeng Cho , Ki-jae Song , Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim , Yeoung-kum Kim , In-sung Joe
发明人： Soo-Haeng Cho , Ki-jae Song , Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim , Yeoung-kum Kim , In-sung Joe
IPC分类号： G11C29/00 , G01R31/28 , G01R31/02
CPC分类号： G11C29/56 , G11C29/56012 , G11C2029/5602 , Y10T29/49004
摘要： A memory test system is disclosed. The memory system includes a memory device, a tester generating a clock signal and a test signal for testing the memory device, and an optical splitting module. The optical splitting module comprises an electrical-optical signal converting unit which converts each of the clock signal and the test signal into an optical signal to output the clock signal and the test signal as an optical clock signal and an optical test signal. The optical splitting unit further comprises an optical signal splitting unit which splits each of the optical clock signal and the optical test signal into n signals (n being at least two), and an optical-electrical signal converting unit which receives the split optical clock signal and the split optical test signal to convert the split optical clock signal and the split optical test signal into electrical signals used in the memory device.
摘要翻译：记录测试系统被公开。存储器系统包括存储器件，产生时钟信号的测试器和用于测试存储器件的测试信号，以及光分离模块。光分路模块包括电光信号转换单元，其将时钟信号和测试信号中的每一个转换为光信号，以输出时钟信号和测试信号作为光时钟信号和光测试信号。光分路单元还包括光信号分离单元，其将每个光时钟信号和光测试信号分解为n个信号（n至少为2个）;以及光电信号转换单元，其接收分离的光时钟信号以及分离的光学测试信号，以将分离的光时钟信号和分割的光学测试信号转换成在存储器件中使用的电信号。

59. 发明授权

US08023349B2 Memory system, memory test system and method of testing memory system and memory test system 有权
标题翻译：内存系统，内存测试系统和测试内存系统和内存测试系统的方法
公开(公告)号：US08023349B2
公开(公告)日：2011-09-20
申请号：US12690656
申请日：2010-01-20
申请人： Soo-Haeng Cho , Ki-jae Song , Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim , Yeoung-kum Kim , In-sung Joe
发明人： Soo-Haeng Cho , Ki-jae Song , Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim , Yeoung-kum Kim , In-sung Joe
IPC分类号： G11C7/22
CPC分类号： G11C29/56 , G11C29/56012 , G11C2029/5602 , Y10T29/49004
摘要： A memory test system is disclosed. The memory system includes a memory device, a tester generating a clock signal and a test signal for testing the memory device, and an optical splitting module. The optical splitting module comprises an electrical-optical signal converting unit which converts each of the clock signal and the test signal into an optical signal to output the clock signal and the test signal as an optical clock signal and an optical test signal. The optical splitting unit further comprises an optical signal splitting unit which splits each of the optical clock signal and the optical test signal into n signals (n being at least two), and an optical-electrical signal converting unit which receives the split optical clock signal and the split optical test signal to convert the split optical clock signal and the split optical test signal into electrical signals used in the memory device.
摘要翻译：记录测试系统被公开。存储器系统包括存储器件，产生时钟信号的测试器和用于测试存储器件的测试信号，以及光分离模块。光分路模块包括电光信号转换单元，其将时钟信号和测试信号中的每一个转换为光信号，以输出时钟信号和测试信号作为光时钟信号和光测试信号。光分路单元还包括光信号分离单元，其将每个光时钟信号和光测试信号分解为n个信号（n至少为2个）;以及光电信号转换单元，其接收分离的光时钟信号以及分离的光学测试信号，以将分离的光时钟信号和分割的光学测试信号转换成在存储器件中使用的电信号。

60. 发明授权

US07773649B2 Semiconductor laser diode having wafer-bonded structure and method of fabricating the same 失效
标题翻译：具有晶片结合结构的半导体激光二极管及其制造方法
公开(公告)号：US07773649B2
公开(公告)日：2010-08-10
申请号：US11878347
申请日：2007-07-24
申请人： Kyu-sang Kim , Kyoung-ho Ha
发明人： Kyu-sang Kim , Kyoung-ho Ha
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0215 , H01S5/0217 , H01S5/22 , H01S5/3063 , H01S2301/173 , H01S2304/12
摘要： Example embodiments are directed to a semiconductor laser diode and a method of fabricating the same. The semiconductor laser diode may include a first semiconductor layer formed over a first substrate and capable of emitting light, and a second semiconductor layer capable of guiding the emitted light, wherein the first and second semiconductor layers are bonded to each other. The method of fabricating the semiconductor laser diode may include forming over a first substrate a first semiconductor layer capable of emitting light, forming over a second substrate a second semiconductor layer capable of guiding the light, bonding the first semiconductor layer to the second semiconductor layer, and removing the second substrate. The second semiconductor layer may be grown separately under conditions different from those for forming the first semiconductor layer, and may be subsequently bonded to the first semiconductor layer.
摘要翻译：示例性实施例涉及半导体激光二极管及其制造方法。半导体激光二极管可以包括形成在第一基板上并且能够发光的第一半导体层，以及能够引导发射的光的第二半导体层，其中第一和第二半导体层彼此接合。制造半导体激光二极管的方法可以包括在第一衬底上形成能够发光的第一半导体层，在第二衬底上形成能够引导光的第二半导体层，将第一半导体层接合到第二半导体层，并移除第二基板。第二半导体层可以在与用于形成第一半导体层的条件不同的条件下单独生长，并且可以随后结合到第一半导体层。

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