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51. 发明授权

US5565284A Lithium secondary cell 失效
标题翻译：锂二次电池
公开(公告)号：US5565284A
公开(公告)日：1996-10-15
申请号：US256862
申请日：1994-08-04
申请人： Keiji Koga , Hisashi Suzuki , Masanori Kaya , Hitoshi Arai , Tsuneo Kagotani , Yousuke Miyaki
发明人： Keiji Koga , Hisashi Suzuki , Masanori Kaya , Hitoshi Arai , Tsuneo Kagotani , Yousuke Miyaki
IPC分类号： H01M4/04 , H01M4/62 , H01M6/10 , H01M4/02
CPC分类号： H01M4/0409 , H01M4/04 , H01M4/0404 , H01M4/0414 , H01M4/0416 , H01M4/0419 , H01M4/043 , H01M4/0435 , H01M4/621 , H01M2006/106
摘要： A main object of the invention is to provide a lithium secondary cell which experiences minimal capacity deterioration upon repetitive charge-discharge cycles.The lithium secondary cell of the invention is characterized in that a negative and/or positive electrode material is bonded to a current collector surface by a binder containing a crosslinked polymer or formed by coating to a current collector a composition comprising an active material and a polymer binder containing a fluorinated polymer which is curable upon exposure to radiation, followed by radiation curing treatment.
摘要翻译： PCT No.PCT / JP93 / 01883 Sec。 371日期：1994年8月4日 102（e）日期1994年8月4日PCT 1993年12月24日PCT公布。公开号WO94 / 15374 日期：1994年7月7日本发明的主要目的是提供一种锂二次电池，其在重复的充放电循环中经历最小的容量劣化。本发明的锂二次电池的特征在于，负极材料和/或正极材料通过含有交联聚合物的粘合剂结合到集电器表面，或者通过将含有活性材料和聚合物的组合物涂布到集电体上而形成含有氟化聚合物的粘合剂，其在暴露于辐射时可固化，然后进行辐射固化处理。

52. 发明授权

US07886814B2 Vehicle air conditioner 有权
公开(公告)号：US07886814B2
公开(公告)日：2011-02-15
申请号：US11448843
申请日：2006-06-08
申请人： Takehiro Yamamoto , Tadashi Okamoto , Hideaki Yasuda , Hiroshi Mayumi , Morihito Tsukuda , Kenichiro Higashi , Keiji Koga , Yoshinori Aono
发明人： Takehiro Yamamoto , Tadashi Okamoto , Hideaki Yasuda , Hiroshi Mayumi , Morihito Tsukuda , Kenichiro Higashi , Keiji Koga , Yoshinori Aono
IPC分类号： B60H1/00
CPC分类号： B60H1/00528 , B60H1/00028 , B60H1/00571 , B60H1/3233 , B60H2001/00107
摘要： In an air conditioner constructed to pass an air introduced into an air conditioning unit through an evaporator and a heater core both arranged in the unit, cooler pipes for the evaporator and heater pipes for the heater core are arranged to extend from the same side wall of the air conditioning unit.

53. 发明申请

US20090140733A1 MAGNETIC DEVICE AND FREQUENCY DETECTOR 有权
标题翻译：磁性装置和频率检测器
公开(公告)号：US20090140733A1
公开(公告)日：2009-06-04
申请号：US12271238
申请日：2008-11-14
申请人： Keiji KOGA , Yuji KAKINUMA , Daisuke MIYAUCHI
发明人： Keiji KOGA , Yuji KAKINUMA , Daisuke MIYAUCHI
IPC分类号： H01F7/00 , G01R33/09
CPC分类号： G01R33/093 , B82Y25/00 , G01R23/07 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01L27/22 , H01L43/08
摘要： A magnetic device includes: a magnetoresistive effect element having a magnetization fixed layer, a magnetization free layer, and a nonmagnetic layer sandwiched between the magnetization fixed layer and the magnetization free layer; an input terminal for feeding an AC signal to the magnetoresistive effect element in its stacking direction; and an output terminal for extracting an output voltage from the magnetoresistive effect element, wherein the nomagnetic layer includes an insulating layer portion comprising an insulating material, and a current-constricting layer portion comprising a conductive material which passes through the insulating layer portion in its film thickness direction.
摘要翻译：磁性装置包括：具有磁化固定层，磁化自由层和夹在磁化固定层和磁化自由层之间的非磁性层的磁阻效应元件; 用于在堆叠方向上向磁阻效应元件馈送AC信号的输入端; 以及用于从磁阻效应元件提取输出电压的输出端子，其中，所述正磁层包括绝缘层部分，所述绝缘层部分包括绝缘材料，所述电流限制层部分包括通过其膜中的绝缘层部分的导电材料厚度方向。

54. 发明授权

US07535757B2 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US07535757B2
公开(公告)日：2009-05-19
申请号：US11905741
申请日：2007-10-03
申请人： Keiji Koga
发明人： Keiji Koga
IPC分类号： G11C11/14
CPC分类号： G11C11/16
摘要： To provide a magnetic memory capable of reducing the amount of write current, even when the element size is 0.7 μm or less. Each of storage areas has a transistor for read/write control, which is connected electrically to either one of the fixed layer and the free layer of each magneto-resistance effect element, a wiring that is electrically connected to the other one of the fixed layer and the free layer of each magneto-resistance effect element, and a magnetic yoke that surrounds the wiring and provides a magnetic field to the free layer, and the number of the transistors within each storage area is one.
摘要翻译：为了提供能够减少写入电流量的磁存储器，即使当元件尺寸为0.7μm或更小时。每个存储区域具有用于读/写控制的晶体管，其与每个磁阻效应元件的固定层和自由层中的任一个电连接，电连接到固定层中的另一个的布线和每个磁阻效应元件的自由层，以及围绕布线并向自由层提供磁场的磁轭，并且每个存储区域内的晶体管数量是一个。

55. 发明申请

US20080180085A1 Magnetic device and frequency analyzer 有权
标题翻译：磁性装置和频率分析仪
公开(公告)号：US20080180085A1
公开(公告)日：2008-07-31
申请号：US12000171
申请日：2007-12-10
申请人： Keiji Koga , Yuji Kakinuma
发明人： Keiji Koga , Yuji Kakinuma
IPC分类号： G01R23/16 , H01L43/08
CPC分类号： G01R23/16 , B82Y25/00 , G01R33/093 , H01L43/08
摘要： A magnetic device and a frequency analyzer are provided as those industrially utilizing a resonance phenomenon of a direction of magnetization of a magnetoresistive element. Since polarities of an alternating current i vary with time, the direction of magnetization oscillates as affected by the magnitude and frequency of the alternating current. When the frequency fF of the direction of magnetization of a free layer in the magnetoresistive element coincides with the frequency f of the alternating current flowing in the magnetoresistive element, the oscillation of the direction of magnetization resonates to increase a voltage between output terminals. A magnetic yoke applies such a magnetic field as to cause resonance, to the free layer. A direct current is used as an electric current outputted from a current control circuit and, while this direct current is swept, voltages at respective specific resonance frequencies are detected by a monitor circuit.
摘要翻译：提供了磁性装置和频率分析器，其工业上利用磁阻元件的磁化方向的共振现象。由于交流电i的极性随时间而变化，所以磁化方向受交流电流的大小和频率的影响而振荡。当磁阻元件中的自由层的磁化方向的频率f Ff与在磁阻元件中流动的交流电流的频率f一致时，磁化方向的振荡共振以增加输出端子之间的电压。磁轭将这种磁场施加到自由层上引起共振。使用直流电流作为从电流控制电路输出的电流，并且当该直流电流被扫描时，各个特定共振频率的电压由监视电路检测。

56. 发明申请

US20080094883A1 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US20080094883A1
公开(公告)日：2008-04-24
申请号：US11905741
申请日：2007-10-03
申请人： Keiji Koga
发明人： Keiji Koga
IPC分类号： G11C11/02
CPC分类号： G11C11/16
摘要： To provide a magnetic memory capable of reducing the amount of write current, even when the element size is 0.7 μm or less. Each of storage areas has a transistor for read/write control, which is connected electrically to either one of the fixed layer and the free layer of each magneto-resistance effect element, a wiring that is electrically connected to the other one of the fixed layer and the free layer of each magneto-resistance effect element, and a magnetic yoke that surrounds the wiring and provides a magnetic field to the free layer, and the number of the transistors within each storage area is one.
摘要翻译：为了提供能够减少写入电流量的磁存储器，即使当元件尺寸为0.7μm或更小时。每个存储区域具有用于读/写控制的晶体管，其与每个磁阻效应元件的固定层和自由层中的任一个电连接，电连接到固定层中的另一个的布线和每个磁阻效应元件的自由层，以及围绕布线并向自由层提供磁场的磁轭，并且每个存储区域内的晶体管数量是一个。

57. 发明授权

US07295460B2 Magnetic memory cell, magnetic memory device, and method of manufacturing magnetic memory device 有权
标题翻译：磁存储器单元，磁存储器件以及磁存储器件的制造方法
公开(公告)号：US07295460B2
公开(公告)日：2007-11-13
申请号：US10550519
申请日：2004-03-26
申请人： Joichiro Ezaki , Keiji Koga , Yuji Kakinuma
发明人： Joichiro Ezaki , Keiji Koga , Yuji Kakinuma
IPC分类号： G11C11/00
CPC分类号： H01L27/226 , H01L27/224 , H01L27/228
摘要： The present invention provides a magnetic memory device capable of reducing a loss of a magnetic field generated by currents flowing in a write line and performing writing stably, and a magnetic memory cell mounted on the magnetic memory device. Further, the invention provides a method for easily manufacturing such a magnetic memory device. A magnetic memory cell includes: stacked bodies each including a magneto-sensitive layer whose magnetization direction changes according to an external magnetic field, and constructed so that current flows in a direction perpendicular to a stack layer surface; and a toroidal magnetic layer disposed between the first and second stacked bodies so that the direction along the stack layer surface is set as an axial direction, and constructed so as to be penetrated by a plurality of conductors along the axial direction. Thus, strength reduction in a circulating magnetic field generated in a toroidal magnetic layer can be suppressed, and the magnetization direction of a magneto-sensitive layer in each of the first and second stacked bodies can be inverted by a smaller write current.
摘要翻译：本发明提供一种能够减少由写入线中流动的电流产生的磁场损耗并且稳定地进行写入的磁存储器件，以及安装在磁存储器件上的磁存储单元。此外，本发明提供了一种用于容易地制造这种磁存储器件的方法。磁存储单元包括：堆叠体，每个堆叠体包括磁敏层，其磁化方向根据外部磁场而变化，并且构造成使电流沿垂直于堆叠层表面的方向流动; 以及设置在第一和第二堆叠体之间的环形磁性层，使得沿堆叠层表面的方向被设定为轴向，并被构造成沿着轴向被多个导体穿透。因此，可以抑制在环形磁性层中产生的循环磁场中的强度降低，并且通过较小的写入电流可以使第一和第二堆叠体中的每一个中的敏感层的磁化方向反转。

58. 发明授权

US07277320B2 Magnetic memory device, sense amplifier circuit and method of reading from magnetic memory device 有权
标题翻译：磁存储器件，读出放大器电路和从磁存储器件读取的方法
公开(公告)号：US07277320B2
公开(公告)日：2007-10-02
申请号：US10550105
申请日：2004-03-23
申请人： Joichiro Ezaki , Yuji Kakinuma , Keiji Koga , Shigekazu Sumita
发明人： Joichiro Ezaki , Yuji Kakinuma , Keiji Koga , Shigekazu Sumita
IPC分类号： G11C11/14 , G11C7/02
CPC分类号： H01L27/226 , B82Y10/00 , G11C11/15 , H01L27/224
摘要： A magnetic memory device and a sense amplifier circuit capable of obtaining a read signal output with a high S/N ratio and reducing power consumption and a circuit space, and a method of reading from a magnetic memory device are provided. In a sense amplifier, transistors (41A), (41B) which are differential amplifiers are commonly connected to one constant current circuit (50) through switches (46) ( . . . , 46n, 46n+1, . . . ). Corresponding bit decode lines (20) ( . . . , 20n, 20n+1, . . . ) and a read selection signal line (90) are connected to the switches (46) ( . . . , 46n, 46n+1, . . . ). A read/write signal is transferred from the read selection signal line (90), and the switches (46) operate according to a bit decode value and the read/write signal.
摘要翻译：提供一种能够获得高S / N比的读取信号输出并降低功耗和电路空间的磁存储器件和读出放大器电路，以及从磁存储器件读取的方法。在读出放大器中，作为差分放大器的晶体管（41A），（41B）通过开关（46）（...，46 n，46 n + 1，...）共同连接到一个恒流电路（50）。。）。相应的位解码线（20）（...，20 n，20 n + 1，...）和读选择信号线（90）连接到开关（46）（...，46 n，46 n + 1，...）。读/写信号从读取选择信号线（90）传送，并且开关（46）根据位解码值和读/写信号进行操作。

59. 发明申请

US20070195594A1 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US20070195594A1
公开(公告)日：2007-08-23
申请号：US11709053
申请日：2007-02-22
申请人： Keiji Koga
发明人： Keiji Koga
IPC分类号： G11C11/14
CPC分类号： G11C11/16
摘要： A magnetoresistance effect element is also located between second wiring and common wiring. The magnetoresistance effect element is electrically connected to the second wiring without a spin filter. When a reading current is supplied between the second wiring for supplying a reading current and the common wiring, since this is not supplied via a spin filter, no spin polarized current is supplied into the magnetoresistance effect element, so that it becomes difficult to magnetization-reverse a magnetosensitive layer. Even in a structure where, in order to improve recording density, the magnetosensitive layer is reduced in area so as to lower a writing current, no magnetization reversal occurs due to a supply of the reading current, and information can be read out without making the reading current considerably small in comparison with the writing current.
摘要翻译：磁阻效应元件也位于第二布线和公共布线之间。磁阻效应元件在没有自旋滤波器的情况下电连接到第二布线。当在用于提供读取电流的第二布线和公共布线之间提供读取电流时，由于不通过自旋滤波器提供，因此不向磁阻效应元件提供自旋极化电流，因此难以磁化 - 反转磁敏层。即使在为了提高记录密度的结构中，磁感应层的面积减小以便降低写入电流，也不会由于读取电流的提供而发生磁化反转，并且可以读出信息而不使与写入电流相比，读取电流相当小。

60. 发明授权

US07209380B2 Magnetic memory device and method of reading the same 有权
标题翻译：磁记忆装置及其读取方法
公开(公告)号：US07209380B2
公开(公告)日：2007-04-24
申请号：US10547508
申请日：2004-03-12
申请人： Joichiro Ezaki , Yuji Kakinuma , Keiji Koga , Shigekazu Sumita
发明人： Joichiro Ezaki , Yuji Kakinuma , Keiji Koga , Shigekazu Sumita
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/15 , H01L27/224 , H01L27/226
摘要： The present invention provides a magnetic memory device capable of performing reading operation with lower power consumption and at high read precision and a method of reading the magnetic memory device. Sense bit lines (21A, 21B) are provided in a bit line direction for each pair of magnetoresistive devices (12A, 12B) constructing a storage cell (12) and a read current is supplied. The read currents passed through the pair of magnetoresistive devices (12A, 12B) flow to the ground via a sense word line (31). Further, by providing a constant current circuit (108B) commonly for plural sense word lines (31), the sum of a pair of read currents passing through the pair of magnetoresistive devices (12A, 12B) in one storage cell constant, and information is read from the storage cell (12) on the basis of the difference between the pair of read currents. By sharing the constant current circuit (108B), variations in the sum of the pair of read currents can be reduced, and power consumption can be also reduced.
摘要翻译：本发明提供一种能够以较低的功耗和高读取精度执行读取操作的磁存储器件以及读取该磁性存储器件的方法。对于构成存储单元（12）的每对磁阻器件（12A，12B），沿位线方向设置感测位线（21A，21B），并提供读取电流。通过一对磁阻器件（12A，12B）的读取电流通过感测字线（31）流到地。此外，通过为多个感测字线（31）共同设置恒流电路（108B），在一个存储单元中通过一对磁阻器件（12A，12B）的一对读电流的总和恒定，并且基于一对读取电流之间的差，从存储单元（12）读取信息。通过共享恒流电路（108B），可以减小一对读取电流之和的变化，并且还可以降低功耗。

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