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1. 发明授权

US07991377B2 Mixer and frequency converting apparatus 有权
标题翻译：混频器和变频装置
公开(公告)号：US07991377B2
公开(公告)日：2011-08-02
申请号：US12391440
申请日：2009-02-24
申请人： Yuji Kakinuma , Keiji Koga
发明人： Yuji Kakinuma , Keiji Koga
IPC分类号： H04B1/26
CPC分类号： H03D7/00
摘要： A mixer includes: a magnetoresistive effect element including a fixed magnetic layer, a free magnetic layer, and a nonmagnetic spacer layer disposed between the fixed magnetic layer and the free magnetic layer; and a magnetic field applying unit that applies a magnetic field to the free magnetic layer. The mixer is operable, when a first high-frequency signal and a second high-frequency signal as a local signal are inputted, to multiply the first high-frequency signal and the second high-frequency signal using the magnetoresistive effect element and to generate a multiplication signal. A frequency converting apparatus includes the mixer and a filter operable, when a higher frequency and a lower frequency out of frequencies of the first high-frequency signal and the second high-frequency signal are expressed as f1 and f2 respectively, to pass one out of a frequency (f1+f2) and a frequency (f1−f2) out of the multiplication signal.
摘要翻译：混频器包括：磁阻效应元件，包括固定磁性层，自由磁性层和设置在固定磁性层和自由磁性层之间的非磁性间隔层; 以及向自由磁性层施加磁场的磁场施加单元。当输入作为本地信号的第一高频信号和第二高频信号时，混频器可操作，以使用磁阻效应元件对第一高频信号和第二高频信号进行乘法，并产生乘法信号。频率转换装置包括混频器和滤波器，当第一高频信号和第二高频信号的较高频率和较低频率频率分别表示为f1和f2时，可以将一个从乘法信号中的频率（f1 + f2）和频率（f1-f2）。

2. 发明授权

US07825658B2 Magnetic device and frequency detector 有权
标题翻译：磁性装置和频率检测器
公开(公告)号：US07825658B2
公开(公告)日：2010-11-02
申请号：US12271238
申请日：2008-11-14
申请人： Keiji Koga , Yuji Kakinuma , Daisuke Miyauchi
发明人： Keiji Koga , Yuji Kakinuma , Daisuke Miyauchi
IPC分类号： G01R33/02
CPC分类号： G01R33/093 , B82Y25/00 , G01R23/07 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01L27/22 , H01L43/08
摘要： A magnetic device includes: a magnetoresistive effect element having a magnetization fixed layer, a magnetization free layer, and a nonmagnetic layer sandwiched between the magnetization fixed layer and the magnetization free layer; an input terminal for feeding an AC signal to the magnetoresistive effect element in its stacking direction; and an output terminal for extracting an output voltage from the magnetoresistive effect element, wherein the nomagnetic layer includes an insulating layer portion comprising an insulating material, and a current-constricting layer portion comprising a conductive material which passes through the insulating layer portion in its film thickness direction.
摘要翻译：磁性装置包括：具有磁化固定层，磁化自由层和夹在磁化固定层和磁化自由层之间的非磁性层的磁阻效应元件; 用于在堆叠方向上向磁阻效应元件馈送AC信号的输入端; 以及用于从磁阻效应元件提取输出电压的输出端子，其中，所述正磁层包括绝缘层部分，所述绝缘层部分包括绝缘材料，所述电流限制层部分包括通过其膜中的绝缘层部分的导电材料厚度方向。

3. 发明授权

US07808229B2 Magnetic device and frequency analyzer 有权
标题翻译：磁性装置和频率分析仪
公开(公告)号：US07808229B2
公开(公告)日：2010-10-05
申请号：US12000171
申请日：2007-12-10
申请人： Keiji Koga , Yuji Kakinuma
发明人： Keiji Koga , Yuji Kakinuma
IPC分类号： G01R15/20
CPC分类号： G01R23/16 , B82Y25/00 , G01R33/093 , H01L43/08
摘要： A magnetic device and a frequency analyzer are provided as those industrially utilizing a resonance phenomenon of a direction of magnetization of a magnetoresistive element. Since polarities of an alternating current i vary with time, the direction of magnetization oscillates as affected by the magnitude and frequency of the alternating current. When the frequency fF of the direction of magnetization of a free layer in the magnetoresistive element coincides with the frequency f of the alternating current flowing in the magnetoresistive element, the oscillation of the direction of magnetization resonates to increase a voltage between output terminals. A magnetic yoke applies such a magnetic field as to cause resonance, to the free layer. A direct current is used as an electric current outputted from a current control circuit and, while this direct current is swept, voltages at respective specific resonance frequencies are detected by a monitor circuit.
摘要翻译：提供了磁性装置和频率分析器，其工业上利用磁阻元件的磁化方向的共振现象。由于交流电i的极性随时间而变化，所以磁化方向受交流电流的大小和频率的影响而振荡。当磁阻元件中的自由层的磁化方向的频率fF与在磁阻元件中流动的交流电流的频率f一致时，磁化方向的振荡会共振以增加输出端子之间的电压。磁轭将这种磁场施加到自由层上引起共振。使用直流电流作为从电流控制电路输出的电流，并且当该直流电流被扫描时，各个特定共振频率的电压由监视电路检测。

4. 发明授权

US07230843B2 Magnetic memory device and writing method of the same 有权
标题翻译：磁存储器件及其写入方法相同
公开(公告)号：US07230843B2
公开(公告)日：2007-06-12
申请号：US10550201
申请日：2004-03-26
申请人： Joichiro Ezaki , Yuji Kakinuma , Keiji Koga , Shigekazu Sumita
发明人： Joichiro Ezaki , Yuji Kakinuma , Keiji Koga , Shigekazu Sumita
IPC分类号： G11C11/14
CPC分类号： H01L27/226 , B82Y10/00 , G11C11/16 , H01L27/224
摘要： The present invention provides a magnetic memory device based on a novel driving method realizing reliable writing and a method of writing the magnetic memory device. Four parallel portions are formed in a pair of loop-shaped write lines (6Xn) and (6Yn). Magnetoresistive devices (12A) and (12B) disposed in the parallel portion in an upper stage construct a memory cell (12Ev), and magnetoresistive devices (12A) and (12B) disposed in the parallel portion in a lower stage construct a memory cell (12Od). When current in the direction from the drive point A to the drive point B is passed from the current drives (123n) and (133n), the directions of the currents in the write lines (6Xn) and (6Yn) are aligned in the parallel portion of the memory cell (12Ev) but are opposite to each other in the parallel portion in the memory cell (12Od). In the memory cell (12Ev), induced magnetic fields enhance each other, and the magnetization directions of the magneto-sensitive layers of the magnetoresistive devices (12A) and (12B) are anti-parallel with each other. In the memory cell (12Od), the induced magnetic fields cancel each other out.
摘要翻译：本发明提供了一种基于实现可靠写入的新型驱动方法和一种写入磁存储器件的方法的磁存储器件。在一对环形写入线（6Xn）和（6Yn）中形成四个平行部分。设置在上级的平行部分中的设置在存储单元（12Ev）中的磁阻器件（12A）和（12B），以及设置在下级的平行部分中的磁阻器件（12A）和（12A）构建一个存储单元（12 Od）。当从驱动点A到驱动点B的方向的电流从电流驱动器（123 n）和（133 n）通过时，写入线（6 Xn）和（6 Yn）中的电流方向为在存储单元（12Ev）的平行部分中排列，但是在存储单元（12OD）的平行部分中彼此相对。在存储单元（12Ev）中，感应磁场彼此增强，并且磁阻器件（12A）和（12B）的磁敏层的磁化方向彼此反平行。在存储单元（12 Od）中，感应磁场相互抵消。

5. 发明授权

US06930911B2 Magnetic memory device, method for writing on the same and method for reading from the same 有权
标题翻译：磁存储器件，用于写入的方法和从其读取的方法
公开(公告)号：US06930911B2
公开(公告)日：2005-08-16
申请号：US10669561
申请日：2003-09-25
申请人： Joichiro Ezaki , Yuji Kakinuma , Keiji Koga
发明人： Joichiro Ezaki , Yuji Kakinuma , Keiji Koga
IPC分类号： G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/00
CPC分类号： G11C11/16
摘要： Each memory cell is constituted by a pair of magnetic memory elements. The magnetic memory elements are connected at one ends to sense bit lines, and at the other ends to a sense word line through a pair of reverse current preventing diodes, respectively. A constant current circuit is disposed on the grounded side of the sense word line. The constant current circuit has a function of fixing a current flowing through the sense word line, and is constituted by a constant voltage generating diode, a transistor and a current limiting resistor.
摘要翻译：每个存储单元由一对磁存储元件构成。磁存储元件在一端连接以感测位线，另一端分别连接到一对反向电流防止二极管的感测字线上。恒流电路设置在感测字线的接地侧。恒流电路具有固定流过感测字线的电流的功能，并且由恒压产生二极管，晶体管和限流电阻构成。

6. 发明申请

US20060256461A1 Magnetic memory device, write current driver circuit and write current driving method 有权
标题翻译：磁存储器件，写入电流驱动电路和写入电流驱动方式
公开(公告)号：US20060256461A1
公开(公告)日：2006-11-16
申请号：US10540400
申请日：2004-01-15
申请人： Joichiro Ezaki , Yuji Kakinuma , Keiji Koga , Shigekazu Sumita
发明人： Joichiro Ezaki , Yuji Kakinuma , Keiji Koga , Shigekazu Sumita
IPC分类号： G11B5/00
CPC分类号： H01L27/224 , G11C11/1675
摘要： The number of write circuit components, variations in a write current flowing through each write line, and the power consumption for write operation can be reduced. A first constant current circuit and a second constant current circuit (a transistor (Q8) and a resistor (R4), and a transistor (Q7) and a resistor (R3)) are shared among a plurality of current direction control portions (54n−1, 54n, 54n+1, . . . ). The constant current circuits are connected to each current direction control portion (54) through a first circuit selector switch (SW1 . . . , SW1n, SW1n+1, . . . ) and a second circuit selector switch (SW2 . . . , SW2n, SW2n+1, . . . ) disposed for each current direction control portion (54). Moreover, a decode signal voltage is applied to the constant current circuits from a word decode line (16X) (bit decode line (16Y)) through the circuit selector switches (SW1) and (SW2).
摘要翻译：可以减少写入电路组件的数量，流过每条写入线的写入电流的变化以及写入操作的功耗。第一恒流电路和第二恒流电路（晶体管（Q 8）和电阻器（R 4）以及晶体管（Q 7）和电阻器（R 3））在多个电流方向控制部分（54 n-1，54 n，54 n + 1，...）。恒流电路通过第一电路选择开关（SW 1 ... SW 1 n，SW 1 n + 1 ...）和第二电路选择开关（SW）连接到每个电流方向控制部分（54） 2，...，SW 2 n，SW 2 n + 1，...，）设置在每个电流方向控制部分（54）上。此外，通过电路选择开关（SW 1）和（SW 2），从字解码线（16×）（位解码线（16Y））向定电流电路施加解码信号电压。

7. 发明申请

US20060120146A1 Magnetic memory device, sense amplifier circuit and method of reading from magnetic memory device 有权
标题翻译：磁存储器件，读出放大器电路和从磁存储器件读取的方法
公开(公告)号：US20060120146A1
公开(公告)日：2006-06-08
申请号：US10550105
申请日：2004-03-23
申请人： Joichiro Ezaki , Yuji Kakinuma , Keiji Koga
发明人： Joichiro Ezaki , Yuji Kakinuma , Keiji Koga
IPC分类号： G11C11/00
CPC分类号： H01L27/226 , B82Y10/00 , G11C11/15 , H01L27/224
摘要： A magnetic memory device and a sense amplifier circuit capable of obtaining a read signal output with a high S/N ratio and reducing power consumption and a circuit space, and a method of reading from a magnetic memory device are provided. In a sense amplifier, transistors (41A), (41B) which are differential amplifiers are commonly connected to one constant current circuit (50) through switches (46) ( . . . , 46n, 46n+1, . . . ). Corresponding bit decode lines (20) ( . . . , 20n, 20n+1, . . . ) and a read selection signal line (90) are connected to the switches (46) ( . . . , 46n, 46n+1, . . . ). A read/write signal is transferred from the read selection signal line (90), and the switches (46) operate according to a bit decode value and the read/write signal.
摘要翻译：提供一种能够获得高S / N比的读取信号输出并降低功耗和电路空间的磁存储器件和读出放大器电路，以及从磁存储器件读取的方法。在读出放大器中，作为差分放大器的晶体管（41A），（41B）通过开关（46）（...，46 n，46 n + 1，...）共同连接到一个恒流电路（50）。。）。相应的位解码线（20）（...，20 n，20 n + 1，...）和读选择信号线（90）连接到开关（46）（...，46 n，46 n + 1，...）。读/写信号从读取选择信号线（90）传送，并且开关（46）根据位解码值和读/写信号进行操作。

8. 发明授权

US06996001B2 Magnetic memory device, write current drive circuit, and write current drive method 失效
标题翻译：磁存储器件，写入电流驱动电路和写入电流驱动方式
公开(公告)号：US06996001B2
公开(公告)日：2006-02-07
申请号：US10717595
申请日：2003-11-21
申请人： Joichiro Ezaki , Yuji Kakinuma , Keiji Koga
发明人： Joichiro Ezaki , Yuji Kakinuma , Keiji Koga
IPC分类号： G11C11/14
CPC分类号： G11C11/16
摘要： A magnetic memory device includes a magneto-resistance effect element including a magnetic sensitive layer whose magnetization direction changes according to an external magnetic field; a write line to which a write current is supplied to apply an external magnetic field to the magnetic sensitive layer; and a write current drive circuit including a current direction control section for controlling the direction of the write current in the write line and a current amount control section for controlling the amount of the write current in the write line to a constant value.
摘要翻译：磁存储器件包括磁阻效应元件，该磁阻效应元件包括其磁化方向根据外部磁场而变化的磁敏层; 提供写入电流以向外部磁场施加到磁敏层的写入线; 以及写入电流驱动电路，包括用于控制写入线中的写入电流的方向的电流方向控制部分和用于将写入线中的写入电流的量控制为恒定值的电流量控制部分。

9. 发明申请

US20080180085A1 Magnetic device and frequency analyzer 有权
标题翻译：磁性装置和频率分析仪
公开(公告)号：US20080180085A1
公开(公告)日：2008-07-31
申请号：US12000171
申请日：2007-12-10
申请人： Keiji Koga , Yuji Kakinuma
发明人： Keiji Koga , Yuji Kakinuma
IPC分类号： G01R23/16 , H01L43/08
CPC分类号： G01R23/16 , B82Y25/00 , G01R33/093 , H01L43/08
摘要： A magnetic device and a frequency analyzer are provided as those industrially utilizing a resonance phenomenon of a direction of magnetization of a magnetoresistive element. Since polarities of an alternating current i vary with time, the direction of magnetization oscillates as affected by the magnitude and frequency of the alternating current. When the frequency fF of the direction of magnetization of a free layer in the magnetoresistive element coincides with the frequency f of the alternating current flowing in the magnetoresistive element, the oscillation of the direction of magnetization resonates to increase a voltage between output terminals. A magnetic yoke applies such a magnetic field as to cause resonance, to the free layer. A direct current is used as an electric current outputted from a current control circuit and, while this direct current is swept, voltages at respective specific resonance frequencies are detected by a monitor circuit.
摘要翻译：提供了磁性装置和频率分析器，其工业上利用磁阻元件的磁化方向的共振现象。由于交流电i的极性随时间而变化，所以磁化方向受交流电流的大小和频率的影响而振荡。当磁阻元件中的自由层的磁化方向的频率f Ff与在磁阻元件中流动的交流电流的频率f一致时，磁化方向的振荡共振以增加输出端子之间的电压。磁轭将这种磁场施加到自由层上引起共振。使用直流电流作为从电流控制电路输出的电流，并且当该直流电流被扫描时，各个特定共振频率的电压由监视电路检测。

10. 发明授权

US07295460B2 Magnetic memory cell, magnetic memory device, and method of manufacturing magnetic memory device 有权
标题翻译：磁存储器单元，磁存储器件以及磁存储器件的制造方法
公开(公告)号：US07295460B2
公开(公告)日：2007-11-13
申请号：US10550519
申请日：2004-03-26
申请人： Joichiro Ezaki , Keiji Koga , Yuji Kakinuma
发明人： Joichiro Ezaki , Keiji Koga , Yuji Kakinuma
IPC分类号： G11C11/00
CPC分类号： H01L27/226 , H01L27/224 , H01L27/228
摘要： The present invention provides a magnetic memory device capable of reducing a loss of a magnetic field generated by currents flowing in a write line and performing writing stably, and a magnetic memory cell mounted on the magnetic memory device. Further, the invention provides a method for easily manufacturing such a magnetic memory device. A magnetic memory cell includes: stacked bodies each including a magneto-sensitive layer whose magnetization direction changes according to an external magnetic field, and constructed so that current flows in a direction perpendicular to a stack layer surface; and a toroidal magnetic layer disposed between the first and second stacked bodies so that the direction along the stack layer surface is set as an axial direction, and constructed so as to be penetrated by a plurality of conductors along the axial direction. Thus, strength reduction in a circulating magnetic field generated in a toroidal magnetic layer can be suppressed, and the magnetization direction of a magneto-sensitive layer in each of the first and second stacked bodies can be inverted by a smaller write current.
摘要翻译：本发明提供一种能够减少由写入线中流动的电流产生的磁场损耗并且稳定地进行写入的磁存储器件，以及安装在磁存储器件上的磁存储单元。此外，本发明提供了一种用于容易地制造这种磁存储器件的方法。磁存储单元包括：堆叠体，每个堆叠体包括磁敏层，其磁化方向根据外部磁场而变化，并且构造成使电流沿垂直于堆叠层表面的方向流动; 以及设置在第一和第二堆叠体之间的环形磁性层，使得沿堆叠层表面的方向被设定为轴向，并被构造成沿着轴向被多个导体穿透。因此，可以抑制在环形磁性层中产生的循环磁场中的强度降低，并且通过较小的写入电流可以使第一和第二堆叠体中的每一个中的敏感层的磁化方向反转。

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