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51. 发明申请

US20050252576A1 Self-pinned GMR structure by annealing 失效
标题翻译：通过退火自固定GMR结构
公开(公告)号：US20050252576A1
公开(公告)日：2005-11-17
申请号：US10846406
申请日：2004-05-14
申请人： Yun-Fei Li , Hui-Chuan Wang , Tong Zhao , Chyu-Jiuh Torng
发明人： Yun-Fei Li , Hui-Chuan Wang , Tong Zhao , Chyu-Jiuh Torng
IPC分类号： H01F10/12 , H01F10/32 , H01F41/30
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/3268 , H01F41/304 , Y10T29/49044
摘要： In a conventional spin valve the shunt resistance of the pinning layer reduces the overall efficiency of the device. This problem has been overcome by using IrMn for the pinning layer at a thickness of about 20 Angstroms or less. For the IrMn to be fully effective it must be subjected to a two-step anneal, first in the presence of a high field (about 10 kOe) for several hours and then in a low field (about 500 Oe) while it cools. The result, in addition to improved pinning, is the ability to do testing at the full film and full wafer levels.
摘要翻译：在传统的自旋阀中，钉扎层的分流电阻降低了器件的整体效率。通过使用IrMn作为钉扎层的约20埃或更小的厚度已经克服了这个问题。为了使IrMn完全有效，必须先进行两步退火，首先在高场（约10kOe）存在数小时，然后在低场（约500Oe）的温度下冷却。结果，除了改进钉扎之外，还可以在整个薄膜和全晶圆级别进行测试。

52. 发明授权

US06879474B2 Junction stability and yield for spin valve heads 失效
标题翻译：自旋阀头的结点稳定性和产量
公开(公告)号：US06879474B2
公开(公告)日：2005-04-12
申请号：US10718878
申请日：2003-11-21
申请人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Moris Dovek , Po-Kang Wang , Mao-Min Chen
发明人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Moris Dovek , Po-Kang Wang , Mao-Min Chen
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , H01L43/08 , H01L43/12
CPC分类号： B82Y10/00 , G11B5/313 , G11B5/3903 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： The possibility of shorting between a spin valve and its underlying magnetic shield layer can be largely eliminated by choosing the bottom spin valve structure. However, doing so causes the hard longitudinal bias that is standard for all such devices to degrade. The present invention overcomes this problem by inserting a thin NiCr, Ni, Fe, or Cr layer between the antiferromagnetic layer and the longitudinal bias layers. This provides a smoother surface for the bias layers to be deposited onto, thereby removing structural distortions to the longitudinal bias layer that would otherwise be present. A process for manufacturing the structure is also described.
摘要翻译：通过选择底部自旋阀结构，可以大大消除自旋阀与其下面的磁屏蔽层之间短路的可能性。然而，这样做会导致所有这些设备的标准硬的纵向偏差降级。本发明通过在反铁磁层和纵向偏置层之间插入薄的NiCr，Ni，Fe或Cr层来克服这个问题。这为偏压层沉积提供了更平滑的表面，从而消除了否则将存在的纵向偏置层的结构变形。还描述了用于制造该结构的方法。

53. 发明授权

US06785954B2 Method for fabricating lead overlay (LOL) on the bottom spin valve GMR read sensor 失效
标题翻译：在底部自旋阀GMR读取传感器上制造引线覆盖层（LOL）的方法
公开(公告)号：US06785954B2
公开(公告)日：2004-09-07
申请号：US10124004
申请日：2002-04-17
申请人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
发明人： Cheng T. Horng , Mao-Min Chen , Chen-Jung Chien , Cherng-Chyi Han , Ru-Ying Tong , Chyu-Jiuh Torng , Hui-Chuan Wang
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous properties of the sensor are obtained by providing two novel barrier layers, one of which prevents oxidation of and Au diffusion into the free layer during annealing and etching and the other of which prevents oxidation of the capping layer during annealing so as to allow good electrical contact between the lead and the sensor stack.
摘要翻译：一种用于制造具有引线覆盖（LOL）导线配置和窄有效轨道宽度的纵向硬偏置底部自旋阀GMR传感器的方法。传感器的有利性质是通过提供两个新的阻挡层获得的，其中之一是防止在退火和蚀刻期间氧化和Au扩散到自由层中，另一个阻止退火期间封盖层的氧化，从而使得良好引线和传感器堆叠之间的电接触。

54. 发明授权

US06306311B1 Method to make a high data rate stitched writer for a giant magneto-resistive head 失效
标题翻译：为巨型磁阻头制作高数据速率缝合笔记的方法
公开(公告)号：US06306311B1
公开(公告)日：2001-10-23
申请号：US09431237
申请日：1999-11-01
申请人： Cherng-Chyi Han , Chyu Jiuh Torng , Mao-Min Chen
发明人： Cherng-Chyi Han , Chyu Jiuh Torng , Mao-Min Chen
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3146 , G11B5/3163 , G11B5/3967 , G11B2005/3996 , Y10T29/49021 , Y10T29/49025 , Y10T29/49032
摘要： A high data-rate stitched pole magnetic read/write-head combining sputtered and plated high magnetic moment materials and a method for fabricating same. The plating and stitching aspects of this fabrication allow the formation of a very narrow write-head, while the sputtering permits the use of high magnetic moment materials having high resistivity and low coercivity.
摘要翻译：组合溅射和电镀高磁矩材料的高数据速率缝合磁极读/写头及其制造方法。该制造的电镀和缝合方面允许形成非常窄的写入头，而溅射允许使用具有高电阻率和低矫顽力的高磁矩材料。

55. 发明授权

US08786036B2 Magnetic tunnel junction for MRAM applications 有权
标题翻译：用于MRAM应用的磁隧道结
公开(公告)号：US08786036B2
公开(公告)日：2014-07-22
申请号：US12930877
申请日：2011-01-19
申请人： Wei Cao , Cheng T. Horng , Witold Kula , Chyu Jiuh Torng
发明人： Wei Cao , Cheng T. Horng , Witold Kula , Chyu Jiuh Torng
IPC分类号： H01L43/10 , H01L27/22
CPC分类号： H01L43/10 , G11C11/161 , H01L27/222 , H01L43/00 , H01L43/02 , H01L43/08
摘要： A MTJ in an MRAM array is disclosed with a composite free layer having a lower crystalline layer contacting a tunnel barrier and an upper amorphous NiFeX layer for improved bit switching performance. The crystalline layer is Fe, Ni, or FEB with a thickness of at least 6 Angstroms which affords a high magnetoresistive ratio. The X element in the NiFeX layer is Mg, Hf, Zr, Nb, or Ta with a content of 5 to 30 atomic % NiFeX thickness is preferably between 20 to 40 Angstroms to substantially reduce bit line switching current and number of shorted bits. In an alternative embodiments, the crystalline layer may be a Fe/NiFe bilayer. Optionally, the amorphous layer may have a NiFeM1/NiFeM2 configuration where M1 and M2 are Mg, Hf, Zr, Nb, or Ta, and M1 is unequal to M2. Annealing at 300° C. to 360° C. provides a high magnetoresistive ratio of about 150%.
摘要翻译：公开了具有接触隧道势垒的较低结晶层和上部非晶NiFeX层的复合自由层的MRAM阵列中的MTJ，用于改善位切换性能。结晶层是厚度至少为6埃的Fe，Ni或FEB，其具有高的磁阻比。 NiFeX层中的X元素为含有5〜30原子％NiFeX厚度的Mg，Hf，Zr，Nb或Ta优选为20〜40埃，以显着降低位线切换电流和短路位数。在替代实施例中，结晶层可以是Fe / NiFe双层。可选地，非晶层可以具有其中M1和M2是Mg，Hf，Zr，Nb或Ta的NiFeM1 / NiFeM2构型，M1不等于M2。在300℃至360℃退火，提供约150％的高磁阻比。

56. 发明申请

US20140061827A1 Metal Protection Layer over SiN Encapsulation for Spin-Torque MRAM Device Applications 审中-公开
标题翻译：用于自旋扭矩MRAM器件应用的SiN封装上的金属保护层
公开(公告)号：US20140061827A1
公开(公告)日：2014-03-06
申请号：US13597465
申请日：2012-08-29
申请人： Kenlin Huang , Yuan-Tung Chin , Tom Zhong , Chyu-Jiuh Torng
发明人： Kenlin Huang , Yuan-Tung Chin , Tom Zhong , Chyu-Jiuh Torng
IPC分类号： H01L29/82 , H01L21/8239
CPC分类号： G01R33/098 , B82Y40/00 , G11C11/161 , H01F10/3254 , H01F41/308 , H01F41/325 , H01L43/02 , H01L43/08 , H01L43/12
摘要： A magnetic thin film deposition is patterned and protected from oxidation during subsequent processes, such as bit line formation, by an oxidation-prevention encapsulation layer of SiN. The SiN layer is then itself protected during the processing by a metal overlayer, preferably of Ta, Al, TiN, TaN or W. A sequence of low pressure plasma etches, using Oxygen, Cl2, BCl3 and C2H4 chemistries provide selectivity of the metal overlayer to various oxide layers and to the photo-resist hard masks used in patterning and metal layer and thereby allow the formation of bit lines while maintaining the integrity of the SiN layer.
摘要翻译：通过SiN的防氧化封装层，在随后的工艺（例如位线形成）中图案化和保护磁性薄膜沉积物免于氧化。然后，SiN层在金属覆盖层，优选Ta，Al，TiN，TaN或W的加工过程中自身受到保护。使用氧气，Cl2，BCl3和C2H4化学物质的低压等离子体蚀刻序列提供金属覆层的选择性到各种氧化物层和用于图案化和金属层中的光刻胶硬掩模，从而允许形成位线，同时保持SiN层的完整性。

57. 发明授权

US08636911B2 Process for MEMS scanning mirror with mass remove from mirror backside 有权
标题翻译：从镜面背面去除质量的MEMS扫描镜的工艺
公开(公告)号：US08636911B2
公开(公告)日：2014-01-28
申请号：US12924873
申请日：2010-10-07
申请人： Jun Chen , Guomin Mao , Tom Zhong , Wei Cao , Yee-Chung Fu , Chyu-Jiuh Torng
发明人： Jun Chen , Guomin Mao , Tom Zhong , Wei Cao , Yee-Chung Fu , Chyu-Jiuh Torng
IPC分类号： B81C1/00
CPC分类号： B81B3/0045 , B81B2201/042 , G02B26/0841
摘要： Two methods of fabricating a MEMS scanning mirror having a tunable resonance frequency are described. The resonance frequency of the mirror is set to a particular value by mass removal from the backside of the mirror during fabrication.
摘要翻译：描述制造具有可调共振频率的MEMS扫描反射镜的两种方法。反射镜的共振频率通过在制造期间从反射镜的背面质量去除而被设定为特定的值。

58. 发明申请

US20130302912A1 Method to Reduce Magnetic Film Stress for Better Yield 有权
标题翻译：减少磁膜应力以获得更好的产量的方法
公开(公告)号：US20130302912A1
公开(公告)日：2013-11-14
申请号：US13469258
申请日：2012-05-11
申请人： Tom Zhong , Kenlin Huang , Chyu-Jiuh Torng
发明人： Tom Zhong , Kenlin Huang , Chyu-Jiuh Torng
IPC分类号： H01L21/02
CPC分类号： H01L43/12 , H01L43/08
摘要： A method of forming a thin-film deposition, such as an MTJ (magnetic tunneling junction) layer, on a wafer-scale CMOS substrate so that the thin-film deposition is segmented by walls or trenches and not affected by thin-film stresses due to wafer warpage or other subsequent annealing processes. An interface layer is formed on the CMOS substrate and is patterned by either forming undercut trenches extending into its upper surface or by fabricating T-shaped walls that extend along its upper surface. The thin-film is deposited continuously over the patterned surface, whereupon either the trenches or walls segment the deposition and serve as stress-relief mechanisms to eliminate adverse effects of processing as stresses such as those caused by wafer warpage.
摘要翻译：在晶片级CMOS衬底上形成诸如MTJ（磁性隧道结）层的薄膜沉积的方法，使得薄膜沉积被壁或沟槽分段，并且不受薄膜应力的影响晶圆翘曲或其他后续退火工艺。在CMOS衬底上形成界面层，并且通过形成延伸到其上表面的底切沟槽或通过制造沿其上表面延伸的T形壁而被图案化。薄膜连续地沉积在图案化表面上，于是沟槽或壁分隔沉积物并用作应力消除机制，以消除作为诸如由晶片翘曲引起的应力的加工的不利影响。

59. 发明授权

US08324698B2 High density spin-transfer torque MRAM process 有权
公开(公告)号：US08324698B2
公开(公告)日：2012-12-04
申请号：US12930333
申请日：2011-01-04
申请人： Tom Zhong , Chyu-Jiuh Torng , Rongfu Xiao , Adam Zhong , Wai-Ming Johnson Kan , Daniel Liu
发明人： Tom Zhong , Chyu-Jiuh Torng , Rongfu Xiao , Adam Zhong , Wai-Ming Johnson Kan , Daniel Liu
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , H01L43/12
摘要： A STT-MRAM integration scheme is disclosed wherein the connection between a MTJ and CMOS metal is simplified by forming an intermediate via contact (VAC) on a CMOS landing pad, a metal (VAM) pad that contacts and covers the VAC, and a MTJ on the VAM. A dual damascene process is performed to connect BIT line metal to CMOS landing pads through VAC/VAM/MTJ stacks in a device region, and to connect BIT line connection pads to CMOS connection pads through BIT connection vias outside the device region. The VAM pad is a single layer or composite made of Ta, TaN, or other conductors which serves as a diffusion barrier, has a highly smooth surface for MTJ formation, and provides excellent selectivity with refill dielectric materials during a chemical mechanical polish process. Each VAC is from 500 to 3000 Angstroms thick to minimize additional circuit resistance and minimize etch burden.

60. 发明申请

US20120169331A1 GMR Sensor Stripe for a Biosensor with Enhanced Sensitivity 有权
标题翻译：用于具有增强灵敏度的生物传感器的GMR传感器条带
公开(公告)号：US20120169331A1
公开(公告)日：2012-07-05
申请号：US13417398
申请日：2012-03-12
申请人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
发明人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
IPC分类号： G01R33/02 , H05K3/00
CPC分类号： G01R33/0052 , B82Y25/00 , G01N15/0656 , G01N27/745 , G01N2015/0065 , G01R33/05 , G01R33/093 , G01R33/098 , Y10T29/49124 , Y10T29/49986
摘要： A GMR sensor stripe provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor stripe free layer is eliminated by a combination of biasing the sensor stripe along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By connecting the stripes in an array and making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.
摘要翻译： GMR传感器条带提供用于检测粘附到固定到基底上的生物分子的磁化颗粒的存在的敏感机制。通过将传感器条沿其纵向而不是通常的横向方向偏置并通过使用外涂层应力和组合来消除滞后对传感器无条纹层的磁矩的稳定偏置点的维持的不利影响磁层的磁致伸缩产生补偿横向磁各向异性。通过将条纹连接在阵列中，使得条纹之间的空间比磁化粒子的尺寸窄，并且通过使条纹的宽度等于粒子的尺寸，增强了传感器阵列的灵敏度。

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