专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明申请

US20140077317A1 MICROELECTROMECHANICAL SYSTEM (MEMS) DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：微电子机电系统（MEMS）器件及其制造方法
公开(公告)号：US20140077317A1
公开(公告)日：2014-03-20
申请号：US13615645
申请日：2012-09-14
申请人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
发明人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
IPC分类号： H01L29/84 , H01L21/02
CPC分类号： B81C1/00158 , B81B3/00 , B81B3/0013 , B81B7/00 , B81B2201/0257 , B81C1/00 , B81C1/00952 , H04R19/005 , H04R2201/003
摘要： A MEMS device includes a silicon substrate and a structural dielectric layer. The silicon substrate has a cavity. The structural dielectric layer is disposed on the silicon substrate. The structural dielectric layer has a space above the cavity of the silicon substrate and holds a plurality of structure elements within the space, including: a conductive backplate, over the silicon substrate, having a plurality of venting holes and a plurality of protrusion structures on top of the conductive backplate; and a diaphragm, located above the conductive backplate by a distance, wherein a chamber is formed between the diaphragm and the conductive backplate, and is connected to the cavity of the silicon substrate through the venting holes. A first side of the diaphragm is exposed by the chamber and faces to the protrusion structures of the conductive backplate and a second side of the diaphragm is exposed to an environment space.
摘要翻译： MEMS器件包括硅衬底和结构介电层。硅衬底具有空腔。结构介电层设置在硅衬底上。所述结构介电层在所述硅衬底的空腔上方具有空间，并且在所述空间内保持多个结构元件，所述结构元件包括：在所述硅衬底上的导电背板，具有多个通气孔和顶部的多个突出结构的导电背板; 以及隔膜，位于导电背板上方一定距离处，其中在隔膜和导电背板之间形成腔室，并通过排气孔与硅衬底的空腔连接。隔膜的第一侧由腔室暴露，并面向导电背板的突出结构，并且隔膜的第二侧暴露于环境空间。

52. 发明申请

US20130056841A1 MICRO-ELECTRO-MECHANICAL SYSTEMS (MEMS) DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：微电子机械系统（MEMS）装置及其制造方法
公开(公告)号：US20130056841A1
公开(公告)日：2013-03-07
申请号：US13224297
申请日：2011-09-01
申请人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
发明人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
IPC分类号： H01L29/84 , H01L21/02
CPC分类号： B81C1/00698 , B81C1/00682 , H01G5/18 , H04R19/005 , H04R19/04
摘要： A MEMS device includes a substrate. The substrate has a plurality of through holes in the substrate within a diaphragm region and optionally an indent space from the second surface at the diaphragm region. A first dielectric structural layer is then disposed over the substrate from the first surface, wherein the first dielectric structural layer has a plurality of openings corresponding to the through holes, wherein each of the through holes remains exposed by the first dielectric structural layer. A second dielectric structural layer with a chamber is disposed over the first dielectric structural layer, wherein the chamber exposes the openings of the first dielectric structural layer and the through holes of the substrate to connect to the indent space. A MEMS diaphragm is embedded in the second dielectric structural layer above the chamber, wherein an air gap is formed between the substrate and the MEMS diaphragm.
摘要翻译： MEMS器件包括衬底。衬底在膜片区域内的衬底中具有多个通孔，并且可选地在隔膜区域处具有与第二表面相邻的凹陷空间。然后，第一介电结构层从第一表面设置在衬底上，其中第一介电结构层具有对应于通孔的多个开口，其中每个通孔保持被第一介电结构层暴露。具有腔室的第二电介质结构层设置在第一介电结构层上，其中腔室暴露第一介电结构层的开口和衬底的通孔以连接到凹陷空间。 MEMS隔膜嵌入在腔室上方的第二电介质结构层中，其中在衬底和MEMS隔膜之间形成气隙。

53. 发明授权

US08093087B2 Method for fabricating MEMS device 有权
标题翻译：制造MEMS器件的方法
公开(公告)号：US08093087B2
公开(公告)日：2012-01-10
申请号：US13209461
申请日：2011-08-15
申请人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
发明人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
IPC分类号： H01L21/00
CPC分类号： B81C1/00246 , B81B2203/0315 , B81B2207/015 , B81C2201/016 , B81C2203/0714 , H04R19/005 , H04R19/04 , H04R31/00
摘要： Method for fabricating MEMS device has a first surface and a second surface and having a MEMS region and an IC region. A MEMS structure is formed over the first surface. A structural dielectric layer is formed over the first surface. The structural dielectric layer has a dielectric member and the spaces surrounding the MEMS structure is filled with the dielectric member. The substrate is patterned by etching process from the second surface of the substrate to expose a portion of the dielectric member filled in the space surrounding the MEMS structure. A wettable thin layer is formed to cover an exposed portion of the substrate at the second surface. An etching process is performed on the dielectric member filled in the spaces surrounding the MEMS structure. The MEMS structure is exposed and released by the etching process. The etching process comprises an isotropic etching process with a wet etchant.
摘要翻译：制造MEMS器件的方法具有第一表面和第二表面，并且具有MEMS区域和IC区域。在第一表面上形成MEMS结构。在第一表面上形成结构介电层。结构介电层具有电介质构件，并且围绕MEMS结构的空间填充有电介质构件。通过从衬底的第二表面的蚀刻工艺对衬底进行构图，以暴露在围绕MEMS结构的空间中填充的电介质构件的一部分。形成可湿性薄层以覆盖第二表面处的基板的暴露部分。对填充在围绕MEMS结构的空间的电介质构件进行蚀刻处理。通过蚀刻工艺暴露和释放MEMS结构。蚀刻工艺包括具有湿蚀刻剂的各向同性蚀刻工艺。

54. 发明申请

US20110300659A1 METHOD FOR FABRICATING MEMS DEVICE 有权
标题翻译：制造MEMS器件的方法
公开(公告)号：US20110300659A1
公开(公告)日：2011-12-08
申请号：US13209461
申请日：2011-08-15
申请人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
发明人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
IPC分类号： H01L21/311
CPC分类号： B81C1/00246 , B81B2203/0315 , B81B2207/015 , B81C2201/016 , B81C2203/0714 , H04R19/005 , H04R19/04 , H04R31/00
摘要： Method for fabricating MEMS device has a first surface and a second surface and having a MEMS region and an IC region. A MEMS structure is formed over the first surface. A structural dielectric layer is formed over the first surface. The structural dielectric layer has a dielectric member and the spaces surrounding the MEMS structure is filled with the dielectric member. The substrate is patterned by etching process from the second surface of the substrate to expose a portion of the dielectric member filled in the space surrounding the MEMS structure. A wettable thin layer is formed to cover an exposed portion of the substrate at the second surface. An etching process is performed on the dielectric member filled in the spaces surrounding the MEMS structure. The MEMS structure is exposed and released by the etching process. The etching process comprises an isotropic etching process with a wet etchant.
摘要翻译：制造MEMS器件的方法具有第一表面和第二表面，并且具有MEMS区域和IC区域。在第一表面上形成MEMS结构。在第一表面上形成结构介电层。结构介电层具有电介质构件，并且围绕MEMS结构的空间填充有电介质构件。通过从衬底的第二表面的蚀刻工艺对衬底进行构图，以暴露在围绕MEMS结构的空间中填充的电介质构件的一部分。形成可湿性薄层以覆盖第二表面处的基板的暴露部分。对填充在围绕MEMS结构的空间的电介质构件进行蚀刻处理。通过蚀刻工艺暴露和释放MEMS结构。蚀刻工艺包括具有湿蚀刻剂的各向同性蚀刻工艺。

55. 发明授权

US07747950B2 Method for inputting Chinese characters, English alphabets, and Korean characters by using a numerical keyboard 失效
标题翻译：使用数字键盘输入汉字，英文字母和韩文字符的方法
公开(公告)号：US07747950B2
公开(公告)日：2010-06-29
申请号：US11183021
申请日：2005-07-18
申请人： Chien-Hsing Lee
发明人： Chien-Hsing Lee
IPC分类号： G06F17/00
CPC分类号： G06F3/0233 , G06F3/018
摘要： A method for inputting Chinese characters, English alphabets, and Korean characters by using a numerical keyboard. The numerical keyboard includes a switching key set for switching the numerical keyboard to a respective software for presenting the Chinese characters, English alphabets and Korean characters. The Chinese characters, English alphabets, and Korean characters are distributed in the keys of the numerical keyboard. The Chinese character is inputted by clicking keys representing first stroke of a traditional recognized component of a Chinese character to be inputted and, a first and a last strokes of a non-traditional recognized component. The English alphabet and the Korean characters are inputted by keys representing vowels, consonants and epilogs thereof and if necessary, other keys for identifying the Chinese characters having same input way are inputted, and the # key and *key are used as auxiliary keys.
摘要翻译：使用数字键盘输入汉字，英文字母和韩文字符的方法。数字键盘包括用于将数字键盘切换到用于呈现汉字，英文字母和韩文字符的相应软件的切换键组。汉字，英文字母和韩文字符分布在数字键盘的键上。通过点击表示要输入的汉字的传统识别组件的第一笔划的键，以及非传统识别组件的第一和最后一个笔画来输入汉字。英文字母和韩文字符由表示元音，辅音和其他词组的键输入，如果需要，输入用于识别具有相同输入方式的汉字的其他键，并且使用＃键和*键作为辅助键。

56. 发明申请

US20100052082A1 MICRO-ELECTRO-MECHANICAL SYSTEMS (MEMS) PACKAGE AND METHOD FOR FORMING THE MEMS PACKAGE 有权
标题翻译：微电子机械系统（MEMS）封装和形成MEMS封装的方法
公开(公告)号：US20100052082A1
公开(公告)日：2010-03-04
申请号：US12203151
申请日：2008-09-03
申请人： Chien-Hsing Lee , Tsung-Min Hsieh , Chih-Hsiang Lin
发明人： Chien-Hsing Lee , Tsung-Min Hsieh , Chih-Hsiang Lin
IPC分类号： H01L29/00 , H01L21/00
CPC分类号： B81B7/0061 , B81B2201/0257 , B81B2207/095 , B81B2207/096 , H01L2224/48091 , H01L2924/10253 , H01L2924/1461 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A micro-electro-mechanical systems (MEMS) package includes a MEMS microphone device. The MEMS microphone device has a first substrate and at least a sensing element on the first substrate wherein a first chamber in the MEMS microphone device is connected to the sensing element. A second substrate is disposed over the MEMS microphone device to provide a second chamber in the second substrate over the sensing element opposite to the first chamber.
摘要翻译：微电子机械系统（MEMS）封装包括MEMS麦克风装置。 MEMS麦克风装置具有第一基板和第一基板上的至少一个感测元件，其中MEMS麦克风装置中的第一腔室连接到感测元件。第二基板设置在MEMS麦克风装置上方，以在与第一室相对的感测元件上的第二基板中提供第二室。

57. 发明申请

US20080175751A1 Electronic deodorization trash receptacle 审中-公开
标题翻译：电子除臭垃圾桶
公开(公告)号：US20080175751A1
公开(公告)日：2008-07-24
申请号：US11656418
申请日：2007-01-23
申请人： Yung-Nien Sun , Chien-Hsing Lee
发明人： Yung-Nien Sun , Chien-Hsing Lee
IPC分类号： A61L9/20 , A61L9/00 , A61L9/16
CPC分类号： A61L9/20 , B65F7/00
摘要： An electronic deodorization trash receptacle includes a shell, a lid, a removable sterilization device and a baffle. The baffle is provided between the shell and lid. The removable sterilization device may be sterilization lamps, with the ultraviolet radiation to provide sterilization and deodorization effects. The baffle can protect users from harm of ultraviolet radiation.
摘要翻译：电子除臭垃圾容器包括壳体，盖子，可移除灭菌装置和挡板。隔板设置在外壳和盖子之间。可拆卸灭菌装置可以是灭菌灯，具有紫外线辐射，提供灭菌和除臭效果。挡板可以保护用户免受紫外线辐射的伤害。

58. 发明申请

US20080032470A1 METHOD FOR FABRICATING NON-VOLATILE MEMORY 审中-公开
标题翻译：制造非易失性存储器的方法
公开(公告)号：US20080032470A1
公开(公告)日：2008-02-07
申请号：US11462372
申请日：2006-08-04
申请人： Chien-Hsing Lee , Tsung-Min Hsieh , Jhyy-Cheng Liou
发明人： Chien-Hsing Lee , Tsung-Min Hsieh , Jhyy-Cheng Liou
IPC分类号： H01L21/8244
CPC分类号： H01L27/11568 , H01L27/0207 , H01L27/115
摘要： A method for fabricating non-volatile memory on a substrate includes forming a plurality of doped lines in the substrate along a first direction, wherein the doped lines serve as a plurality of bit lines, and portions of each of the doped lines serves as source/drain regions for a plurality of memory cells. A charge storage stacked layer is formed over the substrate, wherein the charge storage stacked layer includes a charge trapping layer. A conductive layer is formed over the charge storage layer. The conductive layer and the charge storage stacked layer are patterned to form a plurality of word lines along a second direction, intersecting with the first directing. The remaining portion of the charge trapping layer is just under the word lines, not covering the isolation region between the word lines.
摘要翻译：用于在衬底上制造非易失性存储器的方法包括沿着第一方向在衬底中形成多个掺杂线，其中掺杂线用作多个位线，并且每个掺杂线的部分用作源极/ 漏极区域用于多个存储单元。电荷存储堆叠层形成在衬底上，其中电荷存储层叠层包括电荷俘获层。在电荷存储层上形成导电层。图案化导电层和电荷存储堆叠层，以沿与第一定向相交的第二方向形成多个字线。电荷俘获层的剩余部分刚好在字线之下，不覆盖字线之间的隔离区域。

59. 发明申请

US20070040508A1 Flat fluorescent lamp 审中-公开
标题翻译：平面荧光灯
公开(公告)号：US20070040508A1
公开(公告)日：2007-02-22
申请号：US11585876
申请日：2006-10-25
申请人： Yu-Heng Hsieh , Chien-Hsing Lee , Jau-Shiu Chen , Lai-Cheng Chen
发明人： Yu-Heng Hsieh , Chien-Hsing Lee , Jau-Shiu Chen , Lai-Cheng Chen
IPC分类号： H01J65/00 , H01J61/06 , H01J11/00
CPC分类号： H01J65/046 , H01J61/305
摘要： A flat fluorescent lamp is disclosed. The flat fluorescent lamp comprises a gas discharge chamber, a fluorescent substance, a discharge gas, and a plurality of first and second electrodes. The fluorescent substance is disposed on an inner surface of the gas discharge chamber and the discharge gas is filled in the gas discharge chamber. An electrode pair includes the first and the second electrodes. The first and the second electrodes are disposed on different planes so that the discharge area formed between the first and the second electrodes is larger than that formed between the two electrodes on a same plane to perform better efficiency of luminance.
摘要翻译：公开了一种平面荧光灯。扁平荧光灯包括气体放电室，荧光物质，放电气体和多个第一和第二电极。荧光物质设置在气体放电室的内表面上，并且放电气体填充在气体放电室中。电极对包括第一和第二电极。第一电极和第二电极设置在不同的平面上，使得形成在第一和第二电极之间的放电区域大于在同一平面上的两个电极之间形成的放电区域，以实现更高的亮度效率。

60. 发明申请

US20070016858A1 Method for inputting Chinese characters, English alphabets, and Korean characters by using a numerical keyboard 失效
标题翻译：使用数字键盘输入汉字，英文字母和韩文字符的方法
公开(公告)号：US20070016858A1
公开(公告)日：2007-01-18
申请号：US11183021
申请日：2005-07-18
申请人： Chien-Hsing Lee
发明人： Chien-Hsing Lee
IPC分类号： G06F17/00 , G06F15/00
CPC分类号： G06F3/0233 , G06F3/018
摘要： A method for inputting Chinese characters, English alphabets, and Korean characters by using a numerical keyboard. The numerical keyboard includes a switching key set for switching the numerical keyboard to a respective software for presenting the Chinese characters, English alphabets and Korean characters. The Chinese characters, English alphabets, and Korean characters are distributed in the keys of the numerical keyboard. The Chinese character is inputted by clicking keys representing first stroke of a traditional recognized component of a Chinese character to be inputted and, a first and a last strokes of a non-traditional recognized component. The English alphabet and the Korean characters are inputted by keys representing vowels, consonants and epilogs thereof and if necessary, other keys for identifying the Chinese characters having same input way are inputted, and the # key and *key are used as auxiliary keys.
摘要翻译：使用数字键盘输入汉字，英文字母和韩文字符的方法。数字键盘包括用于将数字键盘切换到用于呈现汉字，英文字母和韩文字符的相应软件的切换键组。汉字，英文字母和韩文字符分布在数字键盘的键上。通过点击表示要输入的汉字的传统识别组件的第一笔划的键，以及非传统识别组件的第一和最后一个笔画来输入汉字。英文字母和韩文字符由表示元音，辅音和其他词组的键输入，如果需要，输入用于识别具有相同输入方式的汉字的其他键，并且使用＃键和*键作为辅助键。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式