专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明申请

US20070087455A1 Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor 有权
标题翻译：在等离子体反应器中独立控制离子密度，离子能量分布和离子离解
公开(公告)号：US20070087455A1
公开(公告)日：2007-04-19
申请号：US11360635
申请日：2006-02-22
申请人： Daniel Hoffman
发明人： Daniel Hoffman
IPC分类号： C23F1/00 , C23C16/00 , H01L21/00 , G01L21/30
CPC分类号： H01J37/32082 , H01J37/32165 , H01J37/3266 , H01L21/67069
摘要： A method of processing a workpiece in a plasma reactor includes coupling RF power from at least three RF power source of three respective frequencies to plasma in the reactor, setting ion energy distribution shape by selecting a ratio between the power levels of a first pair of the at least three RF power sources, and setting ion dissociation and ion density by selecting a ratio between the power levels of a remaining one of the three RF power sources and an applied magnetic field. The three respective frequencies can be an LF frequency, an HF frequency and a VHF frequency, wherein the first pair corresponds to the LF and HF frequencies and the second pair corresponds to the HF and VHF frequencies.
摘要翻译：在等离子体反应器中处理工件的方法包括将来自三个相应频率的至少三个RF功率源的RF功率耦合到反应器中的等离子体，通过选择第一对的功率级之间的比率来设定离子能量分布形状至少三个RF功率源，并且通过选择三个RF功率源中的剩余的一个功率电平和所施加的磁场的功率电平之间的比率来设定离子解离和离子密度。三个相应频率可以是LF频率，HF频率和VHF频率，其中第一对对应于LF和HF频率，并且第二对对应于HF和VHF频率。

42. 发明授权

US07173430B2 Cold-cathode ionization manometer having a longer service life due to two separate cathodes 失效
标题翻译：冷阴极电离压力计由于两个单独的阴极而具有较长的使用寿命
公开(公告)号：US07173430B2
公开(公告)日：2007-02-06
申请号：US10528600
申请日：2003-09-17
申请人： Christian Edelmann , Stefan Wilfert
发明人： Christian Edelmann , Stefan Wilfert
IPC分类号： G01L21/30 , G01L21/34
CPC分类号： H01J41/06 , G01L21/34
摘要： A cold cathode ionization manometer operating according to the inverse magnetron principle to measure pressures in fine vacuums, high vacuums, and ultrahigh vacuums (preferably between 10−2 Pa and 1 Pa). To reduce the contamination and thus to extend the service life the measuring tube is provided with two separately controlled and axially displaced cathodes and a coaxially arranged common anode within a vacuum-proof housing.
摘要翻译：根据反磁控管原理操作的冷阴极电离压力计，以测量微细真空，高真空和超高真空（优选在10 Pa至1 Pa）之间的压力。为了减少污染并因此延长使用寿命，测量管设置有两个独立控制和轴向移位的阴极和在真空防护壳体内的同轴布置的公共阳极。

43. 发明申请

US20060278610A1 Method of controlling chamber parameters of a plasma reactor in accordance with desired values of plural plasma parameters, by translating desired values for the plural plasma parameters to control values for each of the chamber parameters 审中-公开
标题翻译：根据多个等离子体参数的期望值来控制等离子体反应器的腔室参数的方法，通过将多个等离子体参数的期望值转换为每个室参数的控制值
公开(公告)号：US20060278610A1
公开(公告)日：2006-12-14
申请号：US11508543
申请日：2006-08-23
申请人： Daniel Hoffman
发明人： Daniel Hoffman
IPC分类号： G01L21/30 , C23F1/00
CPC分类号： H01J37/32174 , H01J37/32935
摘要： Plural chamber parameters of a plasma reactor are controlled in accordance with desired values of plural plasma parameters, by concurrently translating desired values for the plural plasma parameters to control values for each of plural chamber parameters, and then setting each of the chamber parameters to corresponding ones of the control values. The translating consists of the following steps: (a) for each one of the chamber parameters, ramping the level of the one chamber parameter while sampling RF electrical parameters at an RF bias power input to the wafer support pedestal and computing from each sample of the RF electrical parameters the values of plural plasma parameters, and storing the values with the corresponding levels of the one chamber parameter as corresponding chamber parameter data; (b) for each one of the chamber parameters, deducing, from the corresponding chamber parameter data, a single variable function for each of the plural plasma parameters having the one chamber parameter as an independent variable; (c) from combinations of the functions, constructing surfaces defining simultaneous values of all of the chamber parameters, each respective surface corresponding to a respective constant value of one of the plural plasma parameters, and storing the surfaces.
摘要翻译：通过将多个等离子体参数的期望值同时转换为多个室参数中的每一个的控制值，然后将每个室参数设置为相应的等级参数，根据多个等离子体参数的期望值来控制等离子体反应器的多个室参数的控制值。翻译包括以下步骤：（a）对于腔室参数中的每一个参数，在输入到晶片支撑基座的RF偏置功率采样RF电参数的同时，逐渐增大一个室参数的电平，并从 RF电参数多个等离子体参数的值，并将具有一个室参数的相应电平的值存储为相应的室参数数据; （b）对于每个室参数，从相应的室参数数据推导出具有一个室参数作为独立变量的多个等离子体参数中的每一个的单个可变函数; （c）根据功能的组合，构建表示所有室参数的同时值的表面，每个相应表面对应于多个等离子体参数之一的相应恒定值，并存储表面。

44. 发明授权

US07135123B1 Method and system for integrated circuit backside navigation 失效
标题翻译：集成电路背面导航的方法和系统
公开(公告)号：US07135123B1
公开(公告)日：2006-11-14
申请号：US10758146
申请日：2004-01-14
申请人： Mark Alan Thompson , Erwan Le Roy , Theodore Lundquist , William B. Thompson , Catherine Kardach
发明人： Mark Alan Thompson , Erwan Le Roy , Theodore Lundquist , William B. Thompson , Catherine Kardach
IPC分类号： G01L21/30 , H01L21/00
CPC分类号： G01R31/2898 , G01R31/307 , H01L21/3043 , H01L23/544 , H01L2924/0002 , H01L2924/00
摘要： The backside navigation method of the present invention includes milling a fiducial opening through the substrate of an integrated circuit. The milling process is stopped when the fiducial opening reaches the bottom of a trench isolation structure. The trench isolation structure delineated by the fiducial opening may be imaged and registered to a computer aided design layout image to achieve sub-micron navigation resolution.
摘要翻译：本发明的背面导航方法包括通过集成电路的基板铣削基准开口。当基准开口到达沟槽隔离结构的底部时，铣削过程停止。由基准开口划定的沟槽隔离结构可以被成像并记录到计算机辅助设计布局图像中以实现亚微米导航分辨率。

45. 发明申请

US20060213864A1 Etching method and apparatus 有权
标题翻译：蚀刻方法和装置
公开(公告)号：US20060213864A1
公开(公告)日：2006-09-28
申请号：US11389041
申请日：2006-03-27
申请人： Shigeru Tahara , Masaru Nishino
发明人： Shigeru Tahara , Masaru Nishino
IPC分类号： C03C25/68 , G01L21/30 , H01L21/306
CPC分类号： H01L21/30604 , H01J37/32935 , H01L21/31116 , H01L21/31138
摘要： When a substrate is etched by using a processing gas including a first gas containing halogen and carbon and having a carbon number of two or less per molecule, while supplying the processing gas toward the substrate independently from a central and a peripheral portion of a gas supply unit, which face the central and the periphery part of the substrate respectively, the processing gas is supplied such that a gas flow rate is greater in the central portion than in the peripheral portion. When the substrate is etched by using a processing gas including a second gas containing halogen and carbon and having a carbon number of three or more per molecule, the processing gas is supplied such that a gas flow rate is greater in the peripheral portion than in the central portion.
摘要翻译：当通过使用包含含有卤素和碳的第一气体并且具有每分子碳数为两个或更少碳原子的第一气体的处理气体来蚀刻基板时，同时从气体供应源的中央和外围部分向基板供应处理气体单元，分别面对基板的中心部分和周边部分，供应处理气体，使得中心部分的气体流量比在周边部分中更大。当通过使用包含含有卤素和碳的第二气体并且每分子具有三个或更多个碳数的第二气体的处理气体进行蚀刻时，提供处理气体，使得周边部分的气体流量比在中央部分

46. 发明授权

US07105100B2 System and method for gas distribution in a dry etch process 失效
标题翻译：干蚀刻工艺中气体分布的系统和方法
公开(公告)号：US07105100B2
公开(公告)日：2006-09-12
申请号：US10672002
申请日：2003-09-25
申请人： Haruhiro H. Goto
发明人： Haruhiro H. Goto
IPC分类号： B44C1/22 , H01L21/00 , G01L21/30
CPC分类号： H01L21/67069 , H01J37/3244
摘要： A system and method for distributing gas to a substrate in a dry etch chamber make use of different flow channels to distribute the gas to different portions of a substrate. A first flow channel can be oriented to distribute gas to an inner portion of the substrate. A second flow channel can be oriented to distribute gas to an outer portion of the substrate. With different flow channels, the system and method enable separate control of gas distribution for different portions of the substrate. In particular, the flow channels allow separate control of gas flow rate, concentration, and flow time for different areas of the substrate. In this manner, gas distribution can be selectively controlled to compensate for different etch rates across the substrate surface. Also, gas distribution can be controlled as a function of etch rate patterns exhibited by different etch gasses used in successive process steps. Thus, etch uniformity can be enhanced, leading to improvement in the quality of the overall fabrication process. In a semiconductor fabrication processes, enhanced etch uniformity can lead to increased device yield.
摘要翻译：在干蚀刻室中将气体分配到衬底的系统和方法利用不同的流动通道将气体分配到衬底的不同部分。可以将第一流动通道定向成将气体分配到衬底的内部。第二流动通道可以被定向成将气体分配到基底的外部。通过不同的流动通道，系统和方法能够分别控制衬底的不同部分的气体分布。特别地，流动通道允许单独控制衬底的不同区域的气体流速，浓度和流动时间。以这种方式，可以选择性地控制气体分布以补偿穿过衬底表面的不同蚀刻速率。此外，气体分布可以作为在连续工艺步骤中使用的不同蚀刻气体表现的蚀刻速率图案的函数来控制。因此，可以提高蚀刻均匀性，从而提高整个制造工艺的质量。在半导体制造工艺中，增强的蚀刻均匀性可导致器件产量提高。

47. 发明授权

US07098667B2 Cold cathode ion gauge 有权
标题翻译：冷阴极离子计
公开(公告)号：US07098667B2
公开(公告)日：2006-08-29
申请号：US10997410
申请日：2004-11-23
申请人： Kun Liu
发明人： Kun Liu
IPC分类号： G01L21/30
CPC分类号： G01L21/34 , H01J41/06
摘要： A cold cathode ion gauge is provided that is suitable for use in a high vacuum and in the presence of contaminating gases. By decreasing the discharge current and, more precisely, decreasing the charge current density received by the gauge electrodes, and using certain type of materials for the gauge electrodes, the mechanism by which insulating films are deposited on surface of the electrodes is attenuated and the life of the gauge is significantly prolonged. The gauge discharge current can be decreased by providing a large resistor in series with the anode, while the charge current density can be decreased by using an electrode with larger surface area, which can be achieved by fabricating grooves or fans on electrodes and by using low electron backscattering and low secondary emission materials, like carbon.Another concept of constant current mode is also proposed in this invention for extending the lifetime of CCIGs that are used for vacuum containing unfriendly gases.
摘要翻译：提供一种适用于高真空和有污染气体存在的冷阴极离子计。通过减小放电电流，更准确地说，降低了由电极接收的充电电流密度，并且使用某些类型的用于量规电极的材料，绝缘膜沉积在电极表面上的机制被衰减并且寿命的量规显着延长。可以通过提供与阳极串联的大电阻器来减小表压放电电流，同时可以通过使用具有较大表面积的电极来降低充电电流密度，这可以通过在电极上制造凹槽或风扇并且通过使用低电子后向散射和低二次发射材料，如碳。在本发明中还提出了恒流模式的另一概念，用于延长用于含有不友好气体的真空的CCIG的寿命。

48. 发明申请

US20060157445A1 Gas setting method, gas setting apparatus, etching apparatus and substrate processing system 有权
标题翻译：气体设定方法，气体调节装置，蚀刻装置和基板处理系统
公开(公告)号：US20060157445A1
公开(公告)日：2006-07-20
申请号：US11333289
申请日：2006-01-18
申请人： Hiromasa Mochiki
发明人： Hiromasa Mochiki
IPC分类号： B44C1/22 , G01R31/00 , C03C25/68 , G01L21/30
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/67253
摘要： Mixing ratio and flow rate of a first gaseous mixture supplied to a central portion of the substrate are set. Subsequently, etching is performed by changing a mixing ratio of a second gaseous mixture supplied to an outer peripheral portion of the substrate while a setting of the first gaseous mixture is fixed, thereby, setting the mixing ratio of the second gaseous mixture based on an etching result to make etching selectivities and shapes at the central portion and the outer peripheral portion of the substrate uniform. Then, etching is performed by changing a flow rate of the second gaseous mixture while settings of the first gaseous mixture and the mixing ratio of the second gaseous mixture are fixed, thereby, setting the flow rate of the second gaseous mixture based on etching results to make etching rates at the central portion and the outer peripheral portion of the substrate uniform.
摘要翻译：设置供给到基板的中心部分的第一气体混合物的混合比和流量。随后，通过改变在第一气体混合物的设定被固定的同时提供给基板的外周部分的第二气体混合物的混合比，从而根据蚀刻设定第二气体混合物的混合比来进行蚀刻导致在基板的中心部分和外周部分处的蚀刻选择性和形状均匀。然后，在第一气态混合物的设定和第二气体混合物的混合比固定的同时，通过改变第二气态混合物的流量进行蚀刻，从而将基于蚀刻结果的第二气体混合物的流量设定为使基板的中央部分和外周部分的蚀刻速率均匀。

49. 发明申请

US20060151429A1 Plasma processing method 审中-公开
标题翻译：等离子体处理方法
公开(公告)号：US20060151429A1
公开(公告)日：2006-07-13
申请号：US11032000
申请日：2005-01-11
申请人： Hiroyuki Kitsunai , Junichi Tanaka , Hideyuki Yamamoto
发明人： Hiroyuki Kitsunai , Junichi Tanaka , Hideyuki Yamamoto
IPC分类号： G01L21/30 , C23F1/00
CPC分类号： H01J37/32935
摘要： A plasma processing method utilizing a plasma processing apparatus comprising a control unit and a processing chamber for performing a plasma processing in which the processing chamber comprises a plasma status detecting unit for detecting the processing status in the processing chamber and outputting plural output signals. The method includes storing data related to past wafer processing results, plasma status detection data obtained during the past wafer processing, and a relational expression correlating the two data; computing a prediction of the processing result based on the relational expression and the detected data of the processing chamber status transmitted from the plasma status detecting unit, and evaluating the processing chamber status based on the computed prediction of the processing result.
摘要翻译：一种利用等离子体处理装置的等离子体处理方法，包括控制单元和处理室，用于执行等离子体处理，其中处理室包括用于检测处理室中的处理状态并输出多个输出信号的等离子体状态检测单元。该方法包括存储与过去晶片处理结果有关的数据，在过去的晶片处理期间获得的等离子体状态检测数据以及与两个数据相关的关系表达式; 基于从等离子体状态检测单元发送的处理室状态的关系表达和检测数据，计算处理结果的预测，以及基于所计算的处理结果的预测来评估处理室状态。

50. 发明申请

US20060090850A1 Chemical processing system and method 失效
标题翻译：化学处理系统和方法
公开(公告)号：US20060090850A1
公开(公告)日：2006-05-04
申请号：US11233077
申请日：2005-09-23
申请人： Arthur Laflamme , Jay Wallace , Eric Strang
发明人： Arthur Laflamme , Jay Wallace , Eric Strang
IPC分类号： H01L21/306 , C23C16/00 , G01L21/30
CPC分类号： H01L21/67069 , C23C16/45565
摘要： A chemical processing system includes a processing chamber containing a chemical processing region and a gas injection system. The gas injection system includes at least one first gas injection orifice and at least one second gas injection orifice in communication with the chemical processing region to expose a substrate to mixed first and second process gases. Other embodiments of the chemical processing system can include a sensor to sense a mixing rate of the process gases or a shroud defining a portion of the at least one first gas injection orifice to control mixing of the process gases. A method of mixing process gas in a chemical processing region of a chemical processing system is provided in which a first process gas and a second process gas are injected into the chemical processing region and mixed. A mixture rate is sensed and used to control the mixing.
摘要翻译：化学处理系统包括含有化学处理区域和气体注入系统的处理室。气体注入系统包括与化学处理区域连通的至少一个第一气体注入孔口和至少一个第二气体注入孔，以将衬底暴露于混合的第一和第二工艺气体。化学处理系统的其它实施例可以包括感测处理气体的混合速率的传感器或限定至少一个第一气体喷射孔的一部分的护罩以控制处理气体的混合。提供了在化学处理系统的化学处理区域中混合处理气体的方法，其中将第一处理气体和第二处理气体注入化学处理区域并混合。检测混合物速率并用于控制混合。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式