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41. 发明授权

US07729157B2 Semiconductor storage device 失效
标题翻译：半导体存储设备
公开(公告)号：US07729157B2
公开(公告)日：2010-06-01
申请号：US12201328
申请日：2008-08-29
申请人： Katsuhiko Hoya
发明人： Katsuhiko Hoya
IPC分类号： G11C11/12 , G11C11/24 , G11C29/00 , G11C7/00
CPC分类号： G11C11/22 , G06F11/1008 , G11C2029/0411
摘要： A memory cell array has memory cells, each of which has a ferroelectric capacitor and a selection transistor. A plate line is connected to one end of the ferroelectric capacitor and applied a certain plate line voltage. A sense amplifier circuit senses and amplifies voltage of the bit line. An error correction circuit corrects any error in retained data in the memory cells sensed by the sense amplifier. A plate line control circuit controls the timing for switching a potential of the plate line to a ground potential, based on absence or presence of error correction by the error correction circuit.
摘要翻译：存储单元阵列具有存储单元，每个存储单元具有铁电电容器和选择晶体管。板线连接到铁电电容器的一端并施加一定的板线电压。读出放大器电路感测并放大位线的电压。误差校正电路校正由读出放大器感测到的存储单元中的保留数据中的任何错误。基于错误校正电路的错误校正的不存在或存在，板线控制电路控制将板线的电位切换到接地电位的定时。

42. 发明授权

US07310256B2 Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US07310256B2
公开(公告)日：2007-12-18
申请号：US11134476
申请日：2005-05-23
申请人： Riichiro Takemura , Satoru Akiyama , Satoru Hanzawa , Tomonori Sekiguchi , Kazuhiko Kajigaya
发明人： Riichiro Takemura , Satoru Akiyama , Satoru Hanzawa , Tomonori Sekiguchi , Kazuhiko Kajigaya
IPC分类号： G11C5/06 , G11C5/08 , G11C11/12 , G11C11/24
CPC分类号： G11C11/405 , G11C11/4097 , H01L27/0207 , H01L27/108 , H01L27/10814 , H01L27/10873
摘要： A semiconductor memory device that can achieve high-speed operation or that is highly integrated and simultaneously can achieve high-speed operation is provided. Transistors are disposed on both sides of diffusion layer regions to which capacitor for storing information is connected and other diffusion layer region of each transistor is connected to the same bit line. When access to a memory cell is made, two transistors are activated and the information is read. When writing operation to the memory cell is carried out, two transistors are used and electric charges are written to the capacitor.
摘要翻译：提供了可以实现高速操作或高度集成并同时实现高速操作的半导体存储器件。晶体管设置在扩散层区域的两侧，用于存储信息的电容器被连接到，并且每个晶体管的其它扩散层区域连接到相同的位线。当访问存储器单元时，两个晶体管被激活并且读取该信息。当对存储单元进行写操作时，使用两个晶体管，并将电荷写入电容器。

43. 发明授权

US06856535B2 Reference voltage generator for ferroelectric memory 有权
标题翻译：铁电存储器参考电压发生器
公开(公告)号：US06856535B2
公开(公告)日：2005-02-15
申请号：US10347768
申请日：2003-01-21
申请人： Sudhir K. Madan
发明人： Sudhir K. Madan
IPC分类号： G11C5/14 , G11C11/22 , G11C7/00 , G11C7/02 , G11C8/00 , G11C11/12
CPC分类号： G11C11/22 , G11C5/147
摘要： Apparatus and methods are provided for providing reference voltages during read operations in ferroelectric memories, in which a bitline of a reference array substantially similar or identical to a portion of a ferroelectric data array is precharged and then coupled with a bitline in the data array to provide a reference voltage according to a ratio of a number of reference memory cells along the coupled reference bitline to the number of reference memory cells along the coupled reference bitline plus a number of data memory cells along the coupled data bitline.
摘要翻译：提供了用于在铁电存储器中的读取操作期间提供参考电压的装置和方法，其中与铁电数据阵列的一部分基本相似或相同的参考阵列的位线被预先充电，然后与数据阵列中的位线耦合以提供参考电压根据沿着耦合参考位线的参考存储器单元的数量与沿着耦合的参考位线的参考存储器单元的数量加上沿着耦合的数据位线的数据存储器单元的数量的比率。

44. 发明授权

US4176406A Information recording and recognition 失效
标题翻译：信息记录和识别
公开(公告)号：US4176406A
公开(公告)日：1979-11-27
申请号：US847558
申请日：1977-11-01
申请人： Josef Matkan
发明人： Josef Matkan
IPC分类号： G06K9/20 , B41J2/01 , B41J2/06 , B41J2/075 , B41J2/475 , B41M5/00 , G06K7/08 , G06K15/10 , H04N1/23 , G11C11/12 , G11C11/26
CPC分类号： G06K7/081
摘要： A method of information recording and recognition comprising printing on one surface of a recording member information in the form of ink deposits having electrical conductivity measurable different from that of the non-printed background areas, passing the recording member through an information recognition zone containing corona generating means and sensor means, directing ionic emission from corona generating means towards one face of said recording member, and detecting on the sensor ionization and ion emission changes effected by electrical conductivity differences between said printed ink deposits and non-printed background areas, and converting the thus detected ionization and ion emission changes into electrical signal corresponding to the information.
摘要翻译：一种信息记录和识别方法，包括在记录部件的一个表面上以具有与非印刷背景区域不同的电导率测量的墨水沉积物的形式的信息进行印刷，使记录部件通过包含电晕产生的信息识别区将电晕发生装置的离子发射导向所述记录部件的一个表面的装置和传感器装置，以及通过所述印刷油墨沉积物和非印刷背景区域之间的电导率差异对所述传感器的离子化和离子发射变化进行检测，从而检测到电离和离子发射变化为对应信息的电信号。

45. 发明授权

US3582913A Magnetic alloy material and device utilizing same 失效
标题翻译：磁性合金材料和使用该材料的装置
公开(公告)号：US3582913A
公开(公告)日：1971-06-01
申请号：US3582913D
申请日：1969-10-06
申请人： BELL TELEPHONE LABOR INC
发明人： CHIN GILBERT Y , JAFFE DONALD , NESBITT ETHAN A
IPC分类号： C22C19/07 , G11B5/64 , G11C11/12
CPC分类号： C22C19/07 , G11B5/642
摘要： Magnetic devices depending for their operation upon remanent magnetization include alloys containing from 75-95 weight percent cobalt, 0.5-17 weight percent gold, remainder iron, such alloys being cold drawn so as to result in a minimum thickness reduction of 20 percent.

46. 发明授权

US3569946A Magnetic material and data store 失效
标题翻译：磁性材料和数据存储
公开(公告)号：US3569946A
公开(公告)日：1971-03-09
申请号：US3569946D
申请日：1958-09-25
申请人： BURROUGHS CORP
发明人： HESPENHEIDE WILBUR G
IPC分类号： H01F10/06 , G11C11/12 , G11C5/04
CPC分类号： H01F10/06
摘要： A ferromagnetic plated wire memory having a nonaxially aligned easy direction of magnetization with respect to the longitudinal axis of the wire memory and having spaced apart sections of ferromagnetic material along the wire memory free of said easy direction of magnetization.

47. 发明授权

US3568171A High density shift register storage medium 失效
公开(公告)号：US3568171A
公开(公告)日：1971-03-02
申请号：US3568171D
申请日：1968-12-23
申请人： HUGHES AIRCRAFT CO
发明人： LESHER TOMMY G
IPC分类号： C22C38/10 , G11B5/64 , G11C19/10 , G11C19/00 , G11C11/12
CPC分类号： C22C38/10 , G11B5/642 , G11C19/10 , Y10T428/12333 , Y10T428/12431 , Y10T428/12951
摘要： A magnetic shift register including a fine drawn wire magnetic recording medium of cobalt, iron and vanadium which is annealed, the wire being wound under tension in a helix around a cylindrically disposed polyphase advancing array which includes a plurality of advancing windings oriented transverse to the wire so that a magnetic domain recorded on a segment of the wire can be propagated through the length of the wire by the polyphase advancing array when current pulses are applied to the windings. A read winding is disposed around the wire toward one end thereof so that the propagated magnetic domain induces an output signal in it as it is propagated therethrough.

48. 发明授权

US3083353A Magnetic memory devices 失效
标题翻译：磁存储器件
公开(公告)号：US3083353A
公开(公告)日：1963-03-26
申请号：US67552257
申请日：1957-08-01
申请人： BELL TELEPHONE LABOR INC
发明人： BOBECK ANDREW H
IPC分类号： G11C11/12
CPC分类号： G11C11/12

49. 发明授权

US3067408A Magnetic memory circuits 失效
公开(公告)号：US3067408A
公开(公告)日：1962-12-04
申请号：US77178258
申请日：1958-11-04
申请人： BELL TELEPHONE LABOR INC
发明人： BARRETT JR WILLIAM A
IPC分类号： E05B47/00 , G11C11/12
CPC分类号： E05B47/00 , G11C11/12

50. 发明授权

US3011158A Magnetic memory circuit 失效
标题翻译：磁存储电路
公开(公告)号：US3011158A
公开(公告)日：1961-11-28
申请号：US3940360
申请日：1960-06-28
申请人： BELL TELEPHONE LABOR INC
发明人： ROGERS JOHN L
IPC分类号： G11C11/12
CPC分类号： G11C11/12

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