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    • 42. 发明授权
    • SI3N4 process using polysilane or polysilazane as a binder
    • 使用聚硅烷或聚硅氮烷作为粘合剂的SI3N4工艺
    • US5080844A
    • 1992-01-14
    • US264932
    • 1988-10-31
    • Sophia R. Su
    • Sophia R. Su
    • C04B35/589C04B35/593
    • C04B35/589C04B35/5935
    • A process for making a densified silicon nitride article utilizing polysilanes or polysilazanes as a binder is described. The process involves blending of a silicon nitride composition with a polysilane or a polysilazane to form a mixture. The mixture is molded into an article. The article is then pyrolyzed in a non-oxidizing atmosphere and at a temperature sufficient to form a pyrolyzed article comprising amorphous silicon nitride and silicon carbide. The article is then sintered at a temperature equal to or greater than 1400.degree. C. to form a densified silicon nitride article.
    • 描述了使用聚硅烷或聚硅氮烷作为粘合剂来制造致密化的氮化硅制品的方法。 该方法包括将氮化硅组合物与聚硅烷或聚硅氮烷混合以形成混合物。 将混合物模制成制品。 然后将该制品在非氧化性气氛中并在足以形成包含非晶氮化硅和碳化硅的热解制品的温度下热解。 然后将该制品在等于或大于1400℃的温度下烧结以形成致密的氮化硅制品。
    • 44. 发明授权
    • Process for producing silicon nitride based articles of high fracture
toughness and strength
    • 具有高断裂韧性和强度的氮化硅基制品的制造方法
    • US5047186A
    • 1991-09-10
    • US458122
    • 1989-12-28
    • Marvin HuckabeeSergej-Tomislav BuljanJeffrey T. Neil
    • Marvin HuckabeeSergej-Tomislav BuljanJeffrey T. Neil
    • C04B35/593C04B35/80
    • C04B35/593C04B35/806
    • A process for producing a silicon nitride-based article of improved fracture toughness and strength. The process involves densifying to at least 98% of theoretical density a mixture including (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 .mu.m and a surface area of about 8-12 m.sup.2 /g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 .mu.m and a surface area of about 2-4 m.sup.2 /g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. Optionally, the mixture may be blended with a binder and injection molded to form a green body, which then may be densified by, for example, hot isostatic pressing.
    • 一种制造具有改善的断裂韧性和强度的氮化硅基制品的方法。 该方法包括将理论密度致密化至至少98%的混合物,包括(a)基本上由约10-30重量%的平均粒度约0.2μm的第一氮化硅粉末组成的双峰氮化硅粉末混合物 约8-12m 2 / g的表面积和约70-90%重量的平均粒度约0.4-0.6μm的第二种氮化硅粉末和约2-4m2 / g,(b)基于致密化制品的体积约10-50体积%的具有约3-150的纵横比的具有等效直径的难熔晶须或纤维,其选择在致密化制品中产生等同物 晶须或纤维与氮化硅颗粒的直径比大于1.0,和(c)有效量的合适的氧化物致密化助剂。 任选地,混合物可以与粘合剂混合并注射成型以形成生坯,然后可以通过例如热等静压来致密化。
    • 45. 发明授权
    • Method for production of molded articles of silicon nitride
    • 氮化硅成型体的制造方法
    • US4997604A
    • 1991-03-05
    • US457382
    • 1989-12-27
    • Beat HoferBernhard Einstein
    • Beat HoferBernhard Einstein
    • C04B35/591C04B35/593
    • C04B35/591C04B35/5935
    • A reactively combined silicon nitride is produced in which the starting material is pure silicon powder or a powder mixture of pure silicon and its nitride. This material is subjected to cold isostatic pressing or a slip casting or diecasting process before it is brought into a hot isostatic mold. The reaction is triggered under a nitrogen pressure of initially 0.5-2.0 MPa and at a starting temperature of 1000.degree. C. During the reaction the pressure is raised to 4.9 MPa and the temperature to at most 1420.degree. C. This raising of pressure and temperature is carried out at least partially stepwise. Obtained thereby is a product having a degree of nitriding greater than 92%. With a cycle time of less than 24 hours, the process permits molded articles to be produced which have a wall thickness of more than 10 mm, the material being uniformly nitrided.
    • 产生反应性组合的氮化硅,其中起始材料是纯硅粉末或纯硅及其氮化物的粉末混合物。 该材料在进入热等静压模具之前,经受冷等静压或压铸或压铸过程。 反应在最初为0.5-2.0MPa的氮气压力和1000℃的起始温度下触发。在反应期间,压力升高至4.9MPa,温度升至至多1420℃。这种升高的压力和温度 至少部分地逐步进行。 由此获得的氮化程度大于92%的产品。 循环时间小于24小时,该工艺允许生产具有大于10mm的壁厚的模制品,该材料被均匀氮化。
    • 50. 发明授权
    • Silicon nitride with improved high temperature strength
    • 具有改善的高温强度的氮化硅
    • US4904624A
    • 1990-02-27
    • US144458
    • 1988-01-15
    • Russell L. Yeckley
    • Russell L. Yeckley
    • C04B35/593
    • C04B35/593
    • The flexural strength and stress rupture life of isostatically hot pressed silicon nitride containing between 1 and 12 weight percent of rare earth oxide and not more than 0.5 weight percent alumina is substantially increased by treating green bodies in flowing nitrogen at a temperature between 1000.degree. and 1500.degree. C. before degassing for the isostatic hot pressing. The iron content of the bodies is also reduced by this heat treatment, and this is believed to eliminate sources of fracture failure. Silicon nitride bodies with a flexural strength in excess of 525 MPa at 1370.degree. C. and with stress rupture lives reliably in excess of 200 hours at 300 MPa stress at 1370.degree. C. can be prepared in this way. The strain rates of silicon nitride under high temperature stress can also be reduced.
    • 含有1〜12重量%稀土氧化物和不超过0.5重量%氧化铝的等静压热压氮化硅的弯曲强度和应力断裂寿命通过在1000〜1500℃的温度下处理生态体 在等离子体热压脱气前。 通过这种热处理也减少了这些物体的铁含量,这被认为是消除了断裂破坏的原因。 在1370℃下,弯曲强度超过525MPa,在1370℃下的应力断裂的应力断裂的可靠性超过200小时的氮化硅体可以以这种方式制备。 氮化硅在高温应力下的应变速率也可以降低。