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41. 发明申请

US20140251375A1 METHODS AND APPARATUS FOR SUBSTRATE EDGE CLEANING 有权
标题翻译：基板边缘清洗方法与装置
公开(公告)号：US20140251375A1
公开(公告)日：2014-09-11
申请号：US13785903
申请日：2013-03-05
申请人： APPLIED MATERIALS, INC.
发明人： JAMES MATTHEW HOLDEN , SONG-MOON SUH , TODD EGAN , Kalyanjit Ghosh , Leon Volfovski , Michael R. Rice , Richard Giljum
IPC分类号： H01L21/67 , H01L21/02
CPC分类号： H01L21/67028 , B01D39/12 , B08B5/00 , B08B7/00 , H01L21/02076 , H01L21/02087 , H01L21/0209 , H01L21/67051
摘要： A substrate cleaning apparatus may include a substrate support having a support surface to support a substrate to be cleaned, wherein the substrate support is rotatable about a central axis normal to the support surface; a first nozzle to provide a first cleaning gas to a region of the inner volume corresponding to the position of an edge of the substrate when the substrate is supported by the support surface of the substrate support; a first annular body disposed opposite and spaced apart from the support surface of the substrate support by a gap, the first annular body having a central opening defined by an inner wall shaped to provide a reducing size of the gap between the first annular body and the support surface in a radially outward direction; and a first gas inlet to provide a first gas to the central opening of the first annular body.
摘要翻译：基板清洁装置可以包括具有支撑表面以支撑要清洁的基板的基板支撑件，其中基板支撑件可绕垂直于支撑表面的中心轴线旋转; 第一喷嘴，用于当所述基板由所述基板支撑件的支撑表面支撑时，将第一清洁气体提供到所述内部体积的与所述基板的边缘的位置相对应的区域; 第一环形体，其通过间隙与衬底支撑件的支撑表面相对设置并间隔开，第一环形体具有由内壁限定的中心开口，内壁被成形为提供第一环形体和第二环形体之间的间隙的减小尺寸支撑表面沿径向向外的方向; 以及第一气体入口，用于向第一环形体的中心开口提供第一气体。

42. 发明申请

US20140248774A1 LIQUID TREATMENT APPARATUS AND LIQUID TREATMENT METHOD 有权
标题翻译：液体处理装置和液体处理方法
公开(公告)号：US20140248774A1
公开(公告)日：2014-09-04
申请号：US14234493
申请日：2012-10-11
申请人： TOKYO ELECTRON LIMITED
发明人： Kazuhiro Aiura , Norihiro Ito
IPC分类号： H01L21/02 , H01L21/67 , H01L21/306
CPC分类号： H01L21/02076 , H01L21/30604 , H01L21/67051 , H01L21/67075 , H01L21/6708 , H01L21/6719
摘要： The liquid treatment apparatus according to the present invention includes a substrate holder configured to horizontally hold a substrate, and a top plate configured to be rotatable and to cover the substrate held by the substrate holder from above so as to define a treatment space. In the treatment space, a chemical liquid is supplied by a chemical liquid nozzle onto the substrate, and an atmosphere replacement gas is supplied by a replacement nozzle into the treatment space. The replacement nozzle is supported by a replacement nozzle support arm configured to be horizontally moved between an advanced position at which the replacement nozzle support arm is advanced into the treatment space and a retracted position at which the replacement nozzle support arm is retracted outside from the treatment space. The replacement nozzle is configured to discharge, above the substrate, the atmosphere replacement gas upward.
摘要翻译：根据本发明的液体处理装置包括：基板保持器，其被构造成水平地保持基板;以及顶板，其构造成可旋转并且从上方覆盖由基板保持器保持的基板，以限定处理空间。在处理空间中，化学液体喷嘴将化学液体供给到基板上，通过置换喷嘴将气体置换气体供给到处理空间。替换喷嘴由替换喷嘴支撑臂支撑，所述替换喷嘴支撑臂构造成在更换喷嘴支撑臂前进到处理空间的前进位置和替换喷嘴支撑臂从处理之外缩回的缩回位置之间水平移动空间。更换喷嘴被配置为在基板上方向上排放大气置换气体。

43. 发明申请

US20140190513A1 APPARATUS AND METHOD FOR TREATING SUBSTRATE 有权
标题翻译：用于处理基板的装置和方法
公开(公告)号：US20140190513A1
公开(公告)日：2014-07-10
申请号：US14146314
申请日：2014-01-02
申请人： PSK INC.
发明人： Jongjin Lee , Bum Joon Park , Tae Hoon Kim , Chang Weon Lee , Sunwoong Yim , Han Kyu Lee
IPC分类号： H01L21/02
CPC分类号： H01L21/02046 , H01J37/32192 , H01J37/32779 , H01L21/02076 , H01L21/67383 , H01L21/67766 , H01L21/6835 , H01L21/6836 , H01L21/68707 , H01L2221/68327 , H01L2221/6834
摘要： Provided is a substrate treatment apparatus. The substrate treatment apparatus includes a load port on which a carrier accommodating a plurality of substrates to which a back-ground wafer is attached to a mounting tape fixed to a frame ring is placed, a plasma treatment unit supplying plasma to treat a top surface of the wafer, and a substrate transfer unit transferring the substrate between the carrier and the plasma treatment unit.
摘要翻译：提供了一种基板处理装置。基板处理装置包括负载端口，载置有容纳多个基板的载体，背面晶片与固定在框架环上的安装带相连接，等离子体处理单元，其供给等离子体以处理晶片和在载体和等离子体处理单元之间转移衬底的衬底转移单元。

44. 发明申请

US20140135246A1 CLEANING COMPOSITION, CLEANING PROCESS, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：清洁组合物，清洁工艺和生产半导体器件的方法
公开(公告)号：US20140135246A1
公开(公告)日：2014-05-15
申请号：US14158454
申请日：2014-01-17
申请人： FUJIFILM Corporation
发明人： Atsushi MIZUTANI , Hideo FUSHIMI , Tomonori TAKAHASHI , Kazutaka TAKAHASHI
IPC分类号： H01L21/02
CPC分类号： H01L21/02076 , C11D7/261 , C11D7/265 , C11D7/3209 , C11D11/0047 , H01L21/02063 , H01L21/02071
摘要： A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition. There are also provided a process for producing a semiconductor device that includes a step of cleaning plasma etching residue formed above a semiconductor substrate using the cleaning method, and a cleaning composition for removing plasma etching residue formed above a semiconductor substrate that contains 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10.
摘要翻译：提供一种清洗方法，其包括制备含有57〜95重量％的（a成分）水，1〜40重量％的（成分b）含羟基和/或叔羟基的羟基化合物，（组分c）有机酸和（组分d）季铵化合物，该组合物的pH为5〜10，以及通过清洗组合物除去在半导体衬底上形成的等离子体蚀刻残渣的步骤。还提供了一种半导体器件的制造方法，该半导体器件包括使用该清洁方法清洗形成在半导体衬底上的等离子体蚀刻残渣的步骤，以及用于除去形成在半导体衬底上的等离子体蚀刻残渣的清洗组合物，（成分a）的水，1〜40重量％的（成分b）含羟基和/或叔羟基的羟基化合物，（成分c）有机酸和（成分d）季铵化合物，该组合物的pH为5〜10。

45. 发明授权

US08664089B1 Semiconductor die singulation method 有权
标题翻译：半导体芯片分离方法
公开(公告)号：US08664089B1
公开(公告)日：2014-03-04
申请号：US13589985
申请日：2012-08-20
申请人： William F. Burghout , Dennis Lee Conner , Michael J. Seddon , Jay A. Yoder
发明人： William F. Burghout , Dennis Lee Conner , Michael J. Seddon , Jay A. Yoder
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , H01L21/02076 , H01L21/67028 , H01L2224/03002 , H01L2224/06181 , H01L2224/94 , H01L2224/03
摘要： In one embodiment, semiconductor die are singulated from a semiconductor wafer having a backmetal layer by placing the semiconductor wafer onto a carrier tape with the backmetal layer adjacent the carrier tape, forming singulation lines through the semiconductor wafer to expose the backmetal layer within the singulation lines, and fluid machining the semiconductor wafer to remove the backmetal layer from the singulation lines.
摘要翻译：在一个实施例中，通过将半导体晶片放置在载体带上，背衬层与载带相邻，将半导体晶片从具有背金属层的半导体晶片分离，通过半导体晶片形成分割线，以暴露分离线内的后金属层并且对半导体晶片进行流体加工以从分离线去除背金属层。

46. 发明授权

US08580615B2 Method and system for wafer level singulation 失效
标题翻译：晶圆级分割方法及系统
公开(公告)号：US08580615B2
公开(公告)日：2013-11-12
申请号：US13399638
申请日：2012-02-17
申请人： Klaus Schuegraf , Seshadri Ramaswami , Michael R. Rice , Mohsen S. Salek , Claes H. Bjorkman
发明人： Klaus Schuegraf , Seshadri Ramaswami , Michael R. Rice , Mohsen S. Salek , Claes H. Bjorkman
IPC分类号： H01L21/00 , H01L21/66 , G01R31/26
CPC分类号： H01L21/78 , H01L21/02076 , H01L21/30 , H01L21/302 , H01L21/308 , H01L21/561 , H01L21/568 , H01L21/67017 , H01L21/67207 , H01L21/6836 , H01L23/544 , H01L24/94 , H01L2221/68327 , H01L2924/0002 , H01L2924/12042 , H01L2924/00
摘要： A method of singulating a plurality of semiconductor dies includes providing a carrier substrate and joining a semiconductor substrate to the carrier substrate. The semiconductor substrate includes a plurality of devices. The method also includes forming a mask layer on the semiconductor substrate, exposing a predetermined portion of the mask layer to light, and processing the predetermined portion of the mask layer to form a predetermined mask pattern on the semiconductor substrate. The method further includes forming the plurality of semiconductor dies, each of the plurality of semiconductor dies being associated with the predetermined mask pattern and including one or more of the plurality of devices and separating the plurality of semiconductor dies from the carrier substrate.
摘要翻译：单片化多个半导体管芯的方法包括提供载体衬底并将半导体衬底接合到载体衬底。半导体衬底包括多个器件。该方法还包括在半导体衬底上形成掩模层，将掩模层的预定部分暴露于光，以及处理掩模层的预定部分以在半导体衬底上形成预定的掩模图案。所述方法还包括形成所述多个半导体管芯，所述多个半导体管芯中的每一个与所述预定掩模图案相关联并且包括所述多个器件中的一个或多个并且将所述多个半导体管芯与所述载体衬底分离。

47. 发明申请

US20130152965A1 SEMICONDUCTOR CLEANING DEVICE AND SEMICONDUCTOR CLEANING METHOD 有权
标题翻译：半导体清洁器件和半导体清洁方法
公开(公告)号：US20130152965A1
公开(公告)日：2013-06-20
申请号：US13595299
申请日：2012-08-27
申请人： Akira OKADA , Takaya Noguchi , Hajime Akiyama
发明人： Akira OKADA , Takaya Noguchi , Hajime Akiyama
IPC分类号： B08B6/00
CPC分类号： H01L21/02076 , B08B5/04 , B08B6/00 , H01L21/02041 , H01L21/02046 , H01L21/67 , H01L21/67028 , H01L21/673 , H01L21/67333
摘要： A semiconductor cleaning device includes an external electrode opposed to a side surface of the semiconductor device; a base configured to allow arrangement of the semiconductor device, and having an opening positioned between the side surface of the semiconductor device in the arranged state and the external electrode, and located below the side surface of the semiconductor device; a frame having an electrically insulating property, being in contact with the external electrode, arranged on the base and opposed to the side surface of the semiconductor device; and suction means connected to the opening in the base and being capable of taking in the foreign matter through the opening. Thereby, the semiconductor cleaning device and a semiconductor cleaning method that can remove the foreign matter adhered to the side surface of the semiconductor device and can prevent re-adhesion of the removed foreign matter can be obtained.
摘要翻译：半导体清洁装置包括与半导体器件的侧表面相对的外部电极; 基座，被配置为允许半导体器件的布置，并且具有位于布置状态的半导体器件的侧表面之间的开口和外部电极，并且位于半导体器件的侧表面之下; 具有与外部电极接触的具有电绝缘性能的框架，布置在基座上并与半导体器件的侧表面相对; 以及连接到基座中的开口并且能够通过开口吸收异物的抽吸装置。由此，可以获得能够除去附着在半导体装置的侧面的异物并能够防止除去的异物的再附着的半导体清洗装置和半导体清洗方法。

48. 发明授权

US08421076B2 Insulating substrate for semiconductor apparatus, semiconductor apparatus, and method for manufacturing semiconductor apparatus 有权
标题翻译：半导体装置绝缘基板，半导体装置及半导体装置的制造方法
公开(公告)号：US08421076B2
公开(公告)日：2013-04-16
申请号：US12674560
申请日：2008-09-08
申请人： Michiko Takei , Shin Matsumoto , Kazuhide Tomiyasu , Yasumori Fukushima , Yutaka Takafuji
发明人： Michiko Takei , Shin Matsumoto , Kazuhide Tomiyasu , Yasumori Fukushima , Yutaka Takafuji
IPC分类号： H01L29/72
CPC分类号： H01L27/1266 , H01L21/02076 , H01L21/76254 , H01L27/1214 , H01L29/78603 , Y10T428/24355
摘要： The present invention is intended to provide a glass substrate (20), made of an insulating material, which can constitute a semiconductor apparatus (10) by transferring a single crystal silicon film (50) or a substrate including a semiconductor device onto a surface (24) of the insulating substrate, a transferred surface (26) being part of the surface (24), the single crystal silicon film (50) capable of being provided on the transferred surface (26), and the transferred surface (26) having an arithmetic mean roughness of not more than 0.4 nm.
摘要翻译：本发明旨在提供一种由绝缘材料制成的玻璃基板（20），其可以通过将单晶硅膜（50）或包括半导体器件的基板转移到表面上而构成半导体装置（10） 24），作为表面（24）的一部分的转印面（26），能够设置在转印面（26）上的单晶硅膜（50），转印面（26）具有算术平均粗糙度不大于0.4nm。

49. 发明申请

US20110297190A1 METHOD FOR PROCESSING PROCESS-TARGET OBJECT 有权
标题翻译：处理过程目标对象的方法
公开(公告)号：US20110297190A1
公开(公告)日：2011-12-08
申请号：US13151624
申请日：2011-06-02
申请人： Atsushi MIYANARI
发明人： Atsushi MIYANARI
IPC分类号： B08B3/04 , B08B3/08 , B08B3/10 , B08B3/02
CPC分类号： H01L21/02076
摘要： Provided is a method including the steps of: carrying out a storage process by causing a processing jig, which has a supply opening for supplying a first processing liquid, to be positioned such that a storage space section into which the supply opening is open is sandwiched by the processing jig and the process-target surface, and by storing the first processing liquid in the storage space section; and carrying out a rotation process by supplying the first processing liquid onto the process-target surface from the supply opening, while supplying a second processing liquid onto the outer peripheral part, in a state where the process-target object is being rotated, in the step for carrying out the rotation process, the processing jig being moved along a direction which is not a direction along which the process-target object is being rotated.
摘要翻译：提供了一种方法，包括以下步骤：通过使具有用于供应第一处理液的供给开口的处理夹具被定位成使得供应开口打开的存储空间部分被夹持而进行存储处理通过加工夹具和加工对象表面，并且将第一处理液体储存在存储空间部分中; 并且通过将第一处理液体从供给开口供给到处理对象面上，同时在处理对象物被旋转的状态下向第二处理液体供给第二处理液体，进行旋转处理，执行旋转处理的步骤，处理夹具沿着不是处理对象物体旋转的方向的方向移动。

50. 发明授权

US07816185B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07816185B2
公开(公告)日：2010-10-19
申请号：US12534183
申请日：2009-08-03
申请人： Tadashi Munakata , Shingo Oosaka , Mitsuru Kinoshita , Yoshihiko Yamaguchi , Noriyuki Takahashi
发明人： Tadashi Munakata , Shingo Oosaka , Mitsuru Kinoshita , Yoshihiko Yamaguchi , Noriyuki Takahashi
IPC分类号： H01L23/485
CPC分类号： H01L21/78 , H01L21/02076 , H01L21/561 , H01L21/565 , H01L21/67092 , H01L21/67126 , H01L21/67333 , H01L21/6838 , H01L23/3128 , H01L24/73 , H01L24/97 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48225 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2224/97 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01009 , H01L2924/01033 , H01L2924/01039 , H01L2924/01057 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15183 , H01L2924/15311 , H01L2924/181 , H01L2924/3025 , H01L2224/85 , H01L2924/00014 , H01L2224/83 , H01L2924/00012 , H01L2924/00
摘要： A semiconductor device manufacturing method comprising the steps of providing a matrix substrate having a main surface with plural device areas formed thereon, fixing plural semiconductor chips to the plural device areas respectively, then sealing the plural semiconductor chips all together with resin to form a block sealing member, dividing the block sealing member and the matrix substrate for each of the device areas by dicing, thereafter rubbing a surface of each of the diced sealing member portions with a brush, then storing semiconductor devices formed by the dicing once into pockets respectively of a tray, and conveying the semiconductor devices each individually from the tray. Since the substrate dividing work after block molding is performed by dicing while vacuum-chucking the surface of the block sealing member, the substrate division can be done without imposing any stress on an external terminal mounting surface of the matrix substrate.
摘要翻译：一种半导体器件制造方法，包括以下步骤：提供具有形成在其上的多个器件区域的主表面的矩阵衬底，将多个半导体芯片分别固定到多个器件区域，然后将多个半导体芯片与树脂一起密封以形成块密封通过切割将每个设备区域的块状密封构件和矩阵基板分开，然后用刷子擦拭每个切割的密封构件部分的表面，然后将通过切割形成的半导体器件分别存储到一个托盘，并且分别从托盘传送半导体器件。由于在模块密封部件的表面进行真空夹紧的同时通过切割进行块模塑后的基板分割作业，所以可以在不对矩阵基板的外部端子安装面施加任何应力的情况下进行基板分割。

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