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    • 7. 发明申请
    • CLEANING COMPOSITION, CLEANING PROCESS, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE
    • 清洁组合物,清洁工艺和生产半导体器件的方法
    • US20140135246A1
    • 2014-05-15
    • US14158454
    • 2014-01-17
    • FUJIFILM Corporation
    • Atsushi MIZUTANIHideo FUSHIMITomonori TAKAHASHIKazutaka TAKAHASHI
    • H01L21/02
    • H01L21/02076C11D7/261C11D7/265C11D7/3209C11D11/0047H01L21/02063H01L21/02071
    • A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition. There are also provided a process for producing a semiconductor device that includes a step of cleaning plasma etching residue formed above a semiconductor substrate using the cleaning method, and a cleaning composition for removing plasma etching residue formed above a semiconductor substrate that contains 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10.
    • 提供一种清洗方法,其包括制备含有57〜95重量%的(a成分)水,1〜40重量%的(成分b)含羟基和/或叔羟基的 羟基化合物,(组分c)有机酸和(组分d)季铵化合物,该组合物的pH为5〜10,以及通过清洗组合物除去在半导体衬底上形成的等离子体蚀刻残渣的步骤 。 还提供了一种半导体器件的制造方法,该半导体器件包括使用该清洁方法清洗形成在半导体衬底上的等离子体蚀刻残渣的步骤,以及用于除去形成在半导体衬底上的等离子体蚀刻残渣的清洗组合物, (成分a)的水,1〜40重量%的(成分b)含羟基和/或叔羟基的羟基化合物,(成分c)有机酸和(成分d)季铵 化合物,该组合物的pH为5〜10。