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41. 发明申请

US20110053349A1 APPLICATION OF MILLISECOND HEATING SOURCE FOR SURFACE TREATMENT 有权
标题翻译：用于表面处理的MILLISECOND加热源的应用
公开(公告)号：US20110053349A1
公开(公告)日：2011-03-03
申请号：US12842017
申请日：2010-07-22
申请人： DAVID GAO , Fumitake Mieno
发明人： DAVID GAO , Fumitake Mieno
IPC分类号： H01L21/322
CPC分类号： H01L21/268 , H01L21/02046 , H01L21/02057 , H01L21/02098 , H01L21/823807 , H01L21/823814 , H01L21/823835 , H01L29/165 , H01L29/6659 , H01L29/66636 , H01L29/7833 , H01L29/7843 , H01L29/7848 , Y10S134/902
摘要： A method for fabricating semiconductor devices, e.g., strained silicon MOS device, includes providing a semiconductor substrate (e.g., silicon wafer) having a surface region, which has one or more contaminants and an overlying oxide layer. The one or more contaminants is at least a carbon species. The method also includes processing the surface region using at least a wet process to selectively remove the oxide layer and expose the surface region. The method further includes subjecting the surface region to a laser treatment process for a time period of less than 1 second to increase a temperature of the surface region to greater than 1000 degrees Celsius to remove the one or more contaminants provided on the surface region. The method also includes removing the laser treatment process to cause a reduction in temperature to about 300 to about 600 degrees Celsius in a time period of less than 1 second.
摘要翻译：制造半导体器件（例如应变硅MOS器件）的方法包括提供具有表面区域的半导体衬底（例如，硅晶片），该表面区域具有一个或多个污染物和上覆氧化物层。一种或多种污染物是至少一种碳类。该方法还包括使用至少湿法处理表面区域以选择性地去除氧化物层并暴露表面区域。该方法还包括使表面区域进行激光处理过程，持续时间小于1秒，以将表面区域的温度升高至大于1000摄氏度，以去除表面区域上提供的一种或多种污染物。该方法还包括去除激光处理过程，以在小于1秒的时间段内将温度降低至约300至约600摄氏度。

42. 发明申请

US20100252914A1 OPTICAL SEMICONDUCTOR DEVICE WITH A CONCENTRATION OF RESIDUAL SILICON 审中-公开
标题翻译：具有残留硅浓度的光学半导体器件
公开(公告)号：US20100252914A1
公开(公告)日：2010-10-07
申请号：US12819619
申请日：2010-06-21
申请人： Koichi NANIWAE
发明人： Koichi NANIWAE
IPC分类号： H01L29/30
CPC分类号： H01L21/02046 , C30B33/00 , H01L21/02392 , H01L21/02461 , H01L21/02543 , H01L21/0262 , H01L21/02661
摘要： In a crystal growth reactor, a source material having an etching action and a crystal growth source material are simultaneously supplied to a semiconductor wafer surface, so that residual impurities can be eliminated in an efficient manner by balancing etching rate and crystal growth rate.
摘要翻译：在晶体生长反应器中，具有蚀刻作用的源材料和晶体生长源材料同时供给到半导体晶片表面，从而通过平衡蚀刻速率和晶体生长速率可以有效地消除残留杂质。

43. 发明授权

US07803708B2 Method for reducing amine based contaminants 失效
标题翻译：还原胺类污染物的方法
公开(公告)号：US07803708B2
公开(公告)日：2010-09-28
申请号：US11537378
申请日：2006-09-29
申请人： Xiaomeng Chen , William Cote , Anthony K Stamper , Arthur C Winslow
发明人： Xiaomeng Chen , William Cote , Anthony K Stamper , Arthur C Winslow
IPC分类号： H01L21/302
CPC分类号： H01L21/76831 , H01L21/02046 , H01L21/02052 , H01L21/02126 , H01L21/02129 , H01L21/02131 , H01L21/02164 , H01L21/0234 , H01L21/3105 , H01L21/31111 , H01L21/31116 , H01L21/312 , H01L21/31612 , H01L21/31625 , H01L21/31629 , H01L21/31633 , H01L21/76801 , H01L21/76807 , H01L21/76826
摘要： Method for reducing resist poisoning. The method includes the steps of forming a first structure in a dielectric on a substrate, reducing amine related contaminants from the dielectric and the substrate prior to a formation of a second structure on the substrate such that the amine related contaminates will not diffuse out from either the substrate or the dielectric, wherein the reducing utilizes a plasma treatment which one of chemically ties up the amine related contaminates and binds, traps, or consumes the amine related contaminates during subsequent processing steps, forming the second structure on the substrate, and after the forming of the first structure, preventing poisoning of a resist layer in subsequent processing by the reducing.
摘要翻译：降低抗药性中毒的方法该方法包括以下步骤：在衬底上的电介质中形成第一结构，在衬底上形成第二结构之前，从电介质和衬底中还原胺相关的污染物，使得胺相关的污染物不会从任一种基底或电介质，其中所述还原利用等离子体处理，其中所述等离子体处理中的一种化学结合所述胺相关的污染并在随后的处理步骤期间结合，捕集或消耗胺相关污染物，在所述基底上形成所述第二结构，形成第一结构，防止在随后的还原过程中中和抗蚀剂层。

44. 发明申请

US20090283216A1 METHOD OF AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法和装置
公开(公告)号：US20090283216A1
公开(公告)日：2009-11-19
申请号：US12509867
申请日：2009-07-27
申请人： Mikio TAKAGI
发明人： Mikio TAKAGI
IPC分类号： C23F1/08 , C23C16/46
CPC分类号： C23C16/45502 , C23C16/452 , C23C16/45578 , C23C16/4584 , C30B25/14 , H01L21/02046 , H01L21/67109
摘要： A vertical single wall reaction tube type batch processing furnace can reduce the generation of particles. A method of removing native oxide film by fluoride gas can enhance the efficiency of utilization of gas. A method of exciting reaction gas by a catalyst at high temperature can be applied to a batch processing. A method of exciting reaction gas by a catalyst utilizes an oxidizing agent and gas other than an oxidizing agent. The flow rate of gas in the gas injection pipe and that of gas in the exhaust pipe are made to be substantially equal to each other. The gap between two adjacent wafers is made greater than the mean free path of gas. The oxidizing agent is dissociated by a catalyst of Ir, V or Kanthal while the gas other than the oxidizing agent is dissociated by a catalyst of W.
摘要翻译：立式单壁反应管式批处理炉可以减少颗粒的产生。通过氟化物气体除去天然氧化膜的方法可提高气体的利用效率。通过催化剂在高温下使反应气体激发的方法可以应用于批处理。通过催化剂使反应气体激发的方法利用除氧化剂以外的氧化剂和气体。将气体喷射管中的气体流量和排气管中的气体的流量大致相等。两个相邻晶片之间的间隙大于气体的平均自由程。氧化剂由Ir，V或Kanthal的催化剂解离，而除了氧化剂之外的气体通过W的催化剂解离

45. 发明授权

US07524769B2 Method and system for removing an oxide from a substrate 有权
标题翻译：从基材中除去氧化物的方法和系统
公开(公告)号：US07524769B2
公开(公告)日：2009-04-28
申请号：US11094462
申请日：2005-03-31
申请人： Anthony Dip , Allen John Leith , Seungho Oh
发明人： Anthony Dip , Allen John Leith , Seungho Oh
IPC分类号： H01L21/302
CPC分类号： H01L21/02046 , C23C16/0245 , C23C16/46 , H01J37/32357 , H01L21/02063 , H01L21/0237 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02658 , H01L21/3185 , H01L21/76814
摘要： A method and system for processing a substrate includes providing the substrate in a process chamber, where the substrate contains an oxide layer formed thereon, exciting a hydrogen-containing gas in a remote plasma source coupled to the process chamber, and exposing the substrate to a flow of the excited hydrogen-containing gas at a first substrate temperature lower than about 900° C. to remove the oxide layer from the substrate. The substrate is then maintained at a second temperature different than the first substrate temperature, and a silicon-containing film is formed on the substrate at the second substrate temperature.
摘要翻译：用于处理衬底的方法和系统包括在处理室中提供衬底，其中衬底包含其上形成的氧化物层，激发耦合到处理室的远程等离子体源中的含氢气体，并将衬底暴露于在低于约900℃的第一衬底温度下激发含氢气体的流动，以从衬底去除氧化物层。然后将衬底保持在不同于第一衬底温度的第二温度，并且在第二衬底温度下在衬底上形成含硅膜。

46. 发明申请

US20090029529A1 METHOD FOR CLEANING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：清洁半导体器件的方法
公开(公告)号：US20090029529A1
公开(公告)日：2009-01-29
申请号：US12175734
申请日：2008-07-18
申请人： Jong-Hun Shin
发明人： Jong-Hun Shin
IPC分类号： H01L21/306 , H01L21/205
CPC分类号： H01L21/02046 , H01L21/02054 , H01L21/67069
摘要： Disclosed is a method for cleaning a semiconductor device to remove native oxides or by-products created in the process of forming silicon germanium layers. The use of the method enables removal of native oxides or by-products created in the process of forming silicon germanium layers using hydrogen bromide and prevents reoxidation which may occur in subsequent processes after forming silicon germanium layers.
摘要翻译：公开了一种清洁半导体器件以去除在形成硅锗层的过程中产生的天然氧化物或副产物的方法。使用该方法能够除去在使用溴化氢形成硅锗层的过程中产生的天然氧化物或副产物，并防止在形成硅锗层之后的后续工艺中可能发生的再氧化。

47. 发明申请

US20080276958A1 SUBSTRATE CLEANING CHAMBER AND CLEANING AND CONDITIONING METHODS 有权
标题翻译：基板清洗室和清洁和调节方法
公开(公告)号：US20080276958A1
公开(公告)日：2008-11-13
申请号：US11745451
申请日：2007-05-08
申请人： Vineet Mehta , Karl Brown , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. Parkhe
发明人： Vineet Mehta , Karl Brown , John A. Pipitone , Daniel J. Hoffman , Steven C. Shannon , Keith A. Miller , Vijay D. Parkhe
IPC分类号： C25F3/12 , C25F7/00
CPC分类号： B08B7/0035 , C25F7/00 , H01J37/32009 , H01J37/32541 , H01L21/02046 , H01L21/0206
摘要： A substrate cleaning chamber includes a contoured ceiling electrode having an arcuate surface that faces a substrate support and has a variable cross-sectional thickness to vary the gap size between the arcuate surface and the substrate support to provide a varying plasma density across the substrate support. A dielectric ring for the cleaning chamber comprises a base, a ridge, and a radially inward ledge that covers the peripheral lip of the substrate support. A base shield comprises a circular disc having at least one perimeter wall. Cleaning and conditioning processes for the cleaning chamber are also described.
摘要翻译：衬底清洁室包括具有面向衬底支撑件的弓形表面的轮廓天花板电极，并且具有可变的横截面厚度以改变弧形表面和衬底支撑件之间的间隙尺寸，以在衬底支撑件上提供变化的等离子体密度。用于清洁室的介电环包括覆盖基板支撑件的周缘的基部，脊和径向向内的凸缘。底座包括具有至少一个周边壁的圆盘。还描述了清洁室的清洁和调节过程。

48. 发明授权

US07371992B2 Method for non-contact cleaning of a surface 失效
标题翻译：表面非接触清洁方法
公开(公告)号：US07371992B2
公开(公告)日：2008-05-13
申请号：US10384506
申请日：2003-03-07
申请人： Jeffrey W. Carr
发明人： Jeffrey W. Carr
IPC分类号： B23K10/06
CPC分类号： H01L21/02046 , B08B7/0035 , C03C23/007 , C03C23/0075 , G03F1/82 , H01L21/3065 , H01L21/67028 , H05H1/30
摘要： A flame torch can be used to clean the surface of a contact-sensitive object, such as a glass optic, extremely thin workpiece, or semiconductor wafer by providing a reactive precursor gas to the feed gases of the torch. Reactive atom plasma processing can be used to clean the surface of a contaminant that chemically combines with the atomic radicals of the precursor without affecting the surface. The torch can also be used to modify the surface after cleaning, without transferring the object or engaging in any intermediate processing, by supplying a second reactive precursor that reacts with the surface itself. The flame torch can be used to shape, polish, etch, planarize, deposit, chemically modify and/or redistribute material on the surface of the object.This description is not intended to be a complete description of, or limit the scope of, the invention. Other features, aspects, and objects of the invention can be obtained from a review of the specification, the figures, and the claims.
摘要翻译：火焰焰炬可用于通过向火炬的进料气体提供反应性前体气体来清洁诸如玻璃光学元件，极薄工件或半导体晶片的接触敏感物体的表面。反应性原子等离子体处理可用于清洁与前体的原子自由基化学结合而不影响表面的污染物的表面。通过提供与表面本身反应的第二反应性前体，手电筒也可用于在清洁之后改变表面，而不转移物体或进行任何中间加工。火焰焰炬可用于在物体的表面上成形，抛光，蚀刻，平面化，沉积，化学修饰和/或重新分布材料。本说明书不是对本发明的完整描述或限制本发明的范围。本发明的其它特征，方面和目的可以通过对说明书，附图和权利要求的评述来获得。

49. 发明申请

US20080076232A1 METHOD OF REMOVING IMPURITIES ON A GRINDING SURFACE OF A SEMICONDUCTOR WAFER, EQUIPMENT OF REMOVING IMPURITIES ON A GRINDING SURFACE OF A SEMICONDUCTOR WAFER, PROCESS OF MANUFACTURE OF SEMICONDUCTOR WAFER, PROCESS OF MANUFACTURE OF SEMICONDUCTOR CHIP AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：在半导体晶片的研磨表面上去除蚀刻的方法，在半导体晶片的研磨表面上去除杂质的设备，半导体晶体管的制造工艺，半导体芯片和半导体器件的制造过程
公开(公告)号：US20080076232A1
公开(公告)日：2008-03-27
申请号：US11779852
申请日：2007-07-18
申请人： Kazuyuki HOZAWA
发明人： Kazuyuki HOZAWA
IPC分类号： H01L21/00
CPC分类号： H01L21/67028 , H01L21/02046 , H01L21/02096 , H01L21/3046 , H01L21/78
摘要： A method of removing impurities on a grinding surface of a thinned semiconductor wafer for producing a highly reliable semiconductor device is provided even when the thickness of a semiconductor chip is thinned. After grinding the back surface of the semiconductor wafer, the impurities on the grinding surface are removed by sandblast processing. The sand particles used in the sandblast processing do not contain copper or nickel, and a concentration of copper or nickel contained in the particles is desirably 1014 atoms·cm−3 or less. After the sandblast processing, compress air is jetted onto the grinding surface of the thinned semiconductor wafer, thereby removing foreign substances, surplus particles or the like on the grinding surface. Then, semiconductor chips are obtained by dicing the thinned semiconductor wafer.
摘要翻译：即使当半导体芯片的厚度变薄时，也提供了在用于制造高可靠性半导体器件的薄型半导体晶片的研磨表面上去除杂质的方法。在研磨半导体晶片的背面之后，通过喷砂处理去除研磨表面上的杂质。在喷砂处理中使用的砂粒子不含铜或镍，颗粒中所含的铜或镍的浓度优选为10〜14个原子。减。在喷砂处理之后，将压缩空气喷射到减薄的半导体晶片的研磨表面上，从而在研磨表面上除去异物，多余的颗粒等。然后，通过切割变薄的半导体晶片获得半导体芯片。

50. 发明授权

US07342290B2 Semiconductor metal contamination reduction for ultra-thin gate dielectrics 失效
标题翻译：用于超薄栅极电介质的半导体金属污染减少
公开(公告)号：US07342290B2
公开(公告)日：2008-03-11
申请号：US10981232
申请日：2004-11-04
申请人： Jay S. Burnham , James R. Elliott , Kenneth R. Gault , Mousa H. Ishaq , Steven M. Shank , Mary A. St. Lawrence
发明人： Jay S. Burnham , James R. Elliott , Kenneth R. Gault , Mousa H. Ishaq , Steven M. Shank , Mary A. St. Lawrence
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L21/28194 , H01L21/02046 , H01L21/28202 , H01L21/823857 , H01L29/513 , H01L29/517 , H01L29/518 , Y10S257/913
摘要： A bilayer dielectric structure for substantially reducing or eliminating metal contaminants formed during subsequent polysilicon deposition is provided. The bilayer dielectric structure includes an upper surface region that is rich in chlorine located atop a bottom surface region. The upper surface region that is rich in chlorine removes metal contaminates that are present atop the structure during subsequent formation of a polysilicon layer. A method of forming the bilayer structure is also provided.
摘要翻译：提供了用于大大减少或消除随后的多晶硅沉积期间形成的金属污染物的双层电介质结构。双层电介质结构包括位于底表面区域顶部富含氯的上表面区域。富含氯的上表面区域除去在随后形成多晶硅层期间存在于结构顶部的金属污染物。还提供了形成双层结构的方法。

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